CN102569594A - 封装载体及采用该封装载体的发光二极管封装结构 - Google Patents

封装载体及采用该封装载体的发光二极管封装结构 Download PDF

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CN102569594A
CN102569594A CN2010106029170A CN201010602917A CN102569594A CN 102569594 A CN102569594 A CN 102569594A CN 2010106029170 A CN2010106029170 A CN 2010106029170A CN 201010602917 A CN201010602917 A CN 201010602917A CN 102569594 A CN102569594 A CN 102569594A
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林厚德
方荣熙
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

本发明涉及一种封装载体，其包括绝缘本体及多个金属引脚。所述封装载体包括相对的第一表面及第二表面。所述每个金属引脚包括一个第一接触端、一个第二接触端及一个连接部。所述第一接触端裸露在封装载体的第一表面上，所述第二接触端裸露在封装载体的第二表面上，所述连接部连接于所述第一接触端和第二接触端之间，所述连接部上具有至少一个位于绝缘本体内的弯折角。本发明还涉及一种发光二极管封装结构。

Description

封装载体及采用该封装载体的发光二极管封装结构
技术领域
本发明涉及半导体封装技术，尤其涉及一种封装载体及采用该封装载体的发光二极管封装结构。
背景技术
PLCC(Plastic Leaded Chip Carrier)型半导体封装结构的封装载体采用PMMA等塑料与金属引脚结合，上述封装载体成本低且制作容易，因此，目前被广泛应用。然而，金属引脚和塑料的密合度不高，导致金属引脚和塑料之间往往会产生缝隙，容易使得水气等进入半导体封装结构中，影响半导体封装结构中的半导体芯片的寿命。
发明内容
有鉴于此，有必要提供一种能够防止水气进入半导体封装结构中的封装载体以及采用该封装载体的发光二极管封装结构。
一种封装载体，其包括绝缘本体及多个金属引脚。所述封装载体包括相对的第一表面及第二表面。所述每个金属引脚包括一个第一接触端、一个第二接触端及一个连接部。所述第一接触端裸露在封装载体的第一表面上，所述第二接触端裸露在封装载体的第二表面上，所述连接部连接于所述第一接触端和第二接触端之间，所述连接部上具有至少一个位于绝缘本体内的弯折角。
一种发光二极管封装结构，其包括封装载体、贴设在该封装载体一个表面上的发光二极管芯片、以及覆盖在发光二极管芯片上的封装体。所述封装载体包括绝缘本体及两个金属引脚，所述封装载体包括相对的第一表面及第二表面。所述每个金属引脚包括一个第一接触端、一个第二接触端及一个连接部。所述第一接触端裸露在封装载体的第一表面上，所述第二接触端裸露在封装载体的第二表面上，所述连接部连接于所述第一接触端和第二接触端之间，所述连接部上具有至少一个位于绝缘本体内的弯折角。
所述封装载体中，由于金属引脚的连接部上具有至少一个位于绝缘本体内的弯折角，可以增加金属引脚与绝缘本体之间的接触面积，从而能够提高金属引脚与绝缘本体之间的接着力，有利于提高金属引脚与绝缘本体之间的密合度，防止水气等进入发光二极管封装结构等半导体封装结构中。
附图说明
图1是本发明实施方式提供的一种发光二极管封装结构剖视图。
主要元件符号说明
发光二极管封装结构        100
封装载体                  10
第一表面                  101
第二表面                  102
绝缘本体                  11
金属引脚                  12
第一接触端                121
第二接触端                122
连接部                    123
第一延伸部                123a
第二延伸部                123b
第三延伸部                123c
发光二极管芯片            20
封装体                    30
反射杯                    40
具体实施方式
以下将结合附图对本发明作进一步的详细说明。
请参阅图1，本发明实施方式提供的一种发光二极管封装结构100包括封装载体10、发光二极管芯片20、封装体30及反射杯40。
所述封装载体10包括绝缘本体11及两个金属引脚12。所述封装载体10包括相对的第一表面101及第二表面102。所述绝缘本体11可选自聚甲基丙烯酸甲酯、石墨、硅、陶瓷、类钻、环氧树脂或硅烷氧树脂等。所述金属引脚12可采用金属或金属合金制成。
所述每个金属引脚12包括一个第一接触端121、一个第二接触端122及一个连接部123。所述第一接触端121裸露在封装载体10的第一表面101上，所述第二接触端122裸露在封装载体10的第二表面102上，所述连接部123连接于所述第一接触端121和第二接触端122之间。所述连接部123包括一个与第一接触端121连接的第一延伸部123a及一个与第二接触端122连接的第二延伸部123b。所述第一延伸部123a与第一接触端121之间具有一夹角，即第一延伸部123a与第一接触端121不在一条直线上。所述第二延伸部123b与第二接触端122之间也具有一夹角，即第二延伸部123b与第二接触端122也不在一条直线上。所述连接部123在第一延伸部123a和第二延伸部123b之间形成有至少一个位于绝缘本体11内的弯折角。本实施方式中，所述连接部123还包括一个连接于第一延伸部123a和第二延伸部123b之间的第三延伸部123c。所述第一延伸部123a和第二延伸部123b与所述封装载体10的第一表面101垂直，所述第三延伸部123c与所述封装载体10的第一表面101大致平行。
所述封装载体10也可以用于除发光二极管芯片20以外的其它半导体芯片封装中，且在用于其它半导体芯片封装中时，封装载体10上的金属引脚12数量也不限于本实施方式。
所述发光二极管芯片20贴设于所述封装载体10上，具体的，所述发光二极管芯片20可贴设于所述绝缘本体11上，或贴设于所述金属引脚12的第一接触端121上。本实施方式中，所述发光二极管芯片20贴设于金属引脚12的第一接触端121上。所述发光二极管芯片20可通过覆晶(flip-chip)、共晶(eutectic)或打线等方式与所述两个金属引脚12电连接。本实施方式中，所述发光二极管芯片20与所述两个金属引脚12打线连接。
所述封装体30覆盖在发光二极管芯片20上，用于保护发光二极管芯片20免受灰尘、水气等影响。所述封装体30的材质可以为硅胶(silicone)、环氧树脂(epoxy)或其组合物。优选地，所述封装体30内可掺杂有荧光粉，所述荧光粉可选自钇铝石榴石、铽钇铝石榴石、氮化物、硫化物及硅酸盐中的一种或几种的组合。
所述反射杯40环绕所述发光二极管芯片20及封装体30设置在封装载体10的第一表面101上。所述反射杯40用于提高整个发光二极管封装结构100的出光效率，所述反射杯40可完全采用反射材料制成，或仅其内表面采用反射材料制成。优选地，所述反射杯40采用高导热性材料制成，以提高发光二极管芯片20的散热效率。所述反射杯40亦可与封装载体10一体成型。
本发明实施方式提供的封装载体中，由于金属引脚12的连接部123上具有至少一个位于绝缘本体11内的弯折角，可以增加金属引脚12与绝缘本体11之间的接触面积，从而能够提高金属引脚12与绝缘本体11之间的接着力，有利于提高金属引脚12与绝缘本体11之间的密合度，防止水气等进入发光二极管封装结构等半导体封装结构中。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种像应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种封装载体，其包括绝缘本体及多个金属引脚，所述封装载体包括相对的第一表面及第二表面，其特征在于：所述每个金属引脚包括一个第一接触端、一个第二接触端及一个连接部，所述第一接触端裸露在封装载体的第一表面上，所述第二接触端裸露在封装载体的第二表面上，所述连接部连接于所述第一接触端和第二接触端之间，所述连接部上具有至少一个位于绝缘本体内的弯折角。
2.如权利要求1所述的封装载体，其特征在于：所述连接部包括一个与第一接触端连接的第一延伸部及一个与第二接触端连接的第二延伸部，所述第一延伸部与第一接触端之间具有一夹角，所述第二延伸部与第二接触端之间也具有一夹角，所述连接部在第一延伸部和第二延伸部之间形成有至少一个位于绝缘本体内的弯折角。
3.如权利要求2所述的封装载体，其特征在于：所述连接部还包括一个连接于第一延伸部和第二延伸部之间的第三延伸部，所述第一延伸部和第二延伸部与所述封装载体的第一表面垂直，所述第三延伸部与所述封装载体的第一表面平行。
4.一种发光二极管封装结构，其包括封装载体、贴设在该封装载体一个表面上的发光二极管芯片、以及覆盖在发光二极管芯片上的封装体，所述封装载体包括绝缘本体及两个金属引脚，所述封装载体包括相对的第一表面及第二表面，其特征在于：所述每个金属引脚包括一个第一接触端、一个第二接触端及一个连接部，所述第一接触端裸露在封装载体的第一表面上，所述第二接触端裸露在封装载体的第二表面上，所述连接部连接于所述第一接触端和第二接触端之间，所述连接部上具有至少一个位于绝缘本体内的弯折角。
5.如权利要求4所述的发光二极管封装结构，其特征在于：所述连接部包括一个与第一接触端连接的第一延伸部及一个与第二接触端连接的第二延伸部，所述第一延伸部与第一接触端之间具有一夹角，所述第二延伸部与第二接触端之间也具有一夹角，所述连接部在第一延伸部和第二延伸部之间形成有至少一个位于绝缘本体内的弯折角。
6.如权利要求5所述的发光二极管封装结构，其特征在于：所述连接部还包括一个连接于第一延伸部和第二延伸部之间的第三延伸部，所述第一延伸部和第二延伸部与所述封装载体的第一表面垂直，所述第三延伸部与所述封装载体的第一表面平行。
7.如权利要求4所述的发光二极管封装结构，其特征在于：所述封装体内掺杂有荧光粉。
8.如权利要求7所述的发光二极管封装结构，其特征在于：所述荧光粉选自钇铝石榴石、铽钇铝石榴石、氮化物、硫化物及硅酸盐中的一种或几种的组合。
9.如权利要求4所述的发光二极管封装结构，其特征在于：所述发光二极管封装结构还包括一个环绕所述发光二极管芯片设置的反射杯。
10.如权利要求9所述的发光二极管封装结构，其特征在于：所述反射杯与封装载体一体成型。
CN2010106029170A 2010-12-24 2010-12-24 封装载体及采用该封装载体的发光二极管封装结构 Pending CN102569594A (zh)

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CN103794698A (zh) * 2012-10-31 2014-05-14 展晶科技(深圳)有限公司 发光二极管

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CN102760816A (zh) * 2011-04-26 2012-10-31 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
CN103579448A (zh) * 2012-08-07 2014-02-12 展晶科技(深圳)有限公司 发光二极管封装结构
CN103311407A (zh) * 2013-05-10 2013-09-18 苏州泰嘉电子有限公司 贴片式led支架以及制造方法

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