JP5071405B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP5071405B2 JP5071405B2 JP2009031177A JP2009031177A JP5071405B2 JP 5071405 B2 JP5071405 B2 JP 5071405B2 JP 2009031177 A JP2009031177 A JP 2009031177A JP 2009031177 A JP2009031177 A JP 2009031177A JP 5071405 B2 JP5071405 B2 JP 5071405B2
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- heat sink
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本実施形態は図1〜6を参照して説明する。なお、同一材料または同一、対応する構成要素には同一の符号を付して複数回の説明を省略する場合がある。他の実施形態についても同様である。
本実施形態は、固定板の樹脂筐体に覆われた部分がメタルベース基板表面と接着された電力用半導体装置に関する。本実施形態も固定板の弾性変形により放熱板とヒートシンクを密着させる点は実施形態1と同様であるため説明を省略する。本実施形態は図7〜11を参照して説明する。図7に示すとおり、本実施形態の電力用半導体装置はメタルベース基板23上に接着剤60を介して固定板16が固定される。
本実施形態は、固定板が基板の裏面よりも下方に凸部を備える電力用半導体装置に関する。本実施形態も固定板の弾性変形により放熱板とヒートシンクを密着させる点は実施形態1と同様であるため説明を省略する。本実施形態は図12〜14を参照して説明する。
Claims (5)
- 裏面に放熱板を有する基板と、
前記基板の裏面と反対の面である前記基板の表面に固着された半導体素子と、
前記基板と前記半導体素子とを前記基板の裏面である放熱板が露出するように覆う樹脂筐体と、
前記樹脂筐体に一部が覆われ、一端が前記樹脂筐体の一側面から外部に伸び、他端が前記樹脂筐体の一側面と反対の側面から外部に伸び、前記樹脂筐体外部に伸びる部分にヒートシンクとねじ止めされる貫通穴を有し、前記樹脂筐体に覆われる部分は前記基板の表面の一端から他端にかけて接着剤で固着された固定板とを備え、
前記貫通穴は前記基板の裏面よりも前記基板の表面側に位置することを特徴とする電力用半導体装置。 - 一部で前記半導体素子と電気的に接続され、他の部分で前記樹脂筐体のうち前記基板の裏面が露出する面と反対の面である表面から露出する電極を備えたことを特徴とする請求項1に記載の電力用半導体装置。
- 前記固定板の前記樹脂筐体に覆われる一部が前記放熱板の直上に及ぶように配置されたことを特徴とする請求項1に記載の電力用半導体装置。
- 前記固定板は前記樹脂筐体に覆われる一部において貫通穴または切り欠きまたは溝が形成されたことを特徴とする請求項1乃至3のいずれか1項に記載の電力用半導体装置。
- 前記固定板の前記樹脂筐体外部に伸びる部分の先端は、前記基板の裏面よりも下方に伸びていることを特徴とする請求項1乃至4のいずれか1項に記載の電力用半導体装置。
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JP2009031177A JP5071405B2 (ja) | 2009-02-13 | 2009-02-13 | 電力用半導体装置 |
DE102009049613A DE102009049613B4 (de) | 2009-02-13 | 2009-10-16 | Leistungshalbleitervorrichtung |
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Cited By (2)
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US20220200469A1 (en) * | 2020-01-06 | 2022-06-23 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Power conversion unit |
US20220345049A1 (en) * | 2019-06-21 | 2022-10-27 | Hitachi Astemo, Ltd. | Power conversion device |
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JP5602095B2 (ja) | 2011-06-09 | 2014-10-08 | 三菱電機株式会社 | 半導体装置 |
JP5747737B2 (ja) | 2011-08-26 | 2015-07-15 | 三菱電機株式会社 | 半導体装置とその製造方法 |
WO2013093958A1 (ja) * | 2011-12-20 | 2013-06-27 | 三菱電機株式会社 | 樹脂モールド型半導体モジュール |
JP6016611B2 (ja) * | 2012-12-20 | 2016-10-26 | 三菱電機株式会社 | 半導体モジュール、その製造方法およびその接続方法 |
JP2015076442A (ja) * | 2013-10-07 | 2015-04-20 | ローム株式会社 | パワーモジュールおよびその製造方法 |
DE112014006796B4 (de) | 2014-07-09 | 2023-12-28 | Mitsubishi Electric Corporation | Halbleiteranordnung |
JP6252412B2 (ja) * | 2014-09-10 | 2017-12-27 | 三菱電機株式会社 | 半導体装置 |
JP6587213B2 (ja) * | 2016-05-12 | 2019-10-09 | 株式会社オートネットワーク技術研究所 | 配電基板 |
EP3709346B1 (en) * | 2019-03-15 | 2023-01-18 | Infineon Technologies Austria AG | An electronic module comprising a semiconductor package with integrated clip and fastening element |
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US5458716A (en) * | 1994-05-25 | 1995-10-17 | Texas Instruments Incorporated | Methods for manufacturing a thermally enhanced molded cavity package having a parallel lid |
JPH09199645A (ja) * | 1996-01-17 | 1997-07-31 | Mitsubishi Electric Corp | 半導体装置および半導体モジュール |
JP2003234442A (ja) * | 2002-02-06 | 2003-08-22 | Hitachi Ltd | 半導体装置及びその製造方法 |
DE10223035A1 (de) * | 2002-05-22 | 2003-12-04 | Infineon Technologies Ag | Elektronisches Bauteil mit Hohlraumgehäuse, insbesondere Hochfrequenz-Leistungsmodul |
JP3725103B2 (ja) | 2002-08-23 | 2005-12-07 | 三菱電機株式会社 | 半導体装置 |
DE102004043019A1 (de) * | 2004-09-06 | 2006-03-23 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Baugruppe |
JP4569473B2 (ja) * | 2006-01-04 | 2010-10-27 | 株式会社日立製作所 | 樹脂封止型パワー半導体モジュール |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20220345049A1 (en) * | 2019-06-21 | 2022-10-27 | Hitachi Astemo, Ltd. | Power conversion device |
US12074532B2 (en) * | 2019-06-21 | 2024-08-27 | Hitachi Astemo, Ltd. | Power conversion device |
US20220200469A1 (en) * | 2020-01-06 | 2022-06-23 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Power conversion unit |
US12062992B2 (en) * | 2020-01-06 | 2024-08-13 | Tmeic Corporation | Power conversion unit |
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DE102009049613A1 (de) | 2010-08-26 |
JP2010186931A (ja) | 2010-08-26 |
DE102009049613B4 (de) | 2013-07-04 |
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