TW200635057A - Back junction solar cell and process for producing the same - Google Patents

Back junction solar cell and process for producing the same

Info

Publication number
TW200635057A
TW200635057A TW094140452A TW94140452A TW200635057A TW 200635057 A TW200635057 A TW 200635057A TW 094140452 A TW094140452 A TW 094140452A TW 94140452 A TW94140452 A TW 94140452A TW 200635057 A TW200635057 A TW 200635057A
Authority
TW
Taiwan
Prior art keywords
diffusion layer
type diffusion
producing
same
solar cell
Prior art date
Application number
TW094140452A
Other languages
Chinese (zh)
Inventor
Tsutomu Onishi
Takeshi Akatsuka
Shunichi Igarashi
Original Assignee
Naoetsu Electronics Co Ltd
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Naoetsu Electronics Co Ltd, Shinetsu Chemical Co filed Critical Naoetsu Electronics Co Ltd
Publication of TW200635057A publication Critical patent/TW200635057A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

A minute arrangement of p<SP>+</SP> type diffusion layer and n<SP>+</SP> type diffusion layer without contact with each other. On the backside 1a of semiconductor substrate 1, there are simultaneously formed p<SP>+</SP> type diffusion layer 2 and n<SP>+</SP> type diffusion layer 3 in close vicinity of each other. Recessed groove 1b is formed from the backside 1a of the semiconductor substrate 1 to a border portion where outer edges of the p<SP>+</SP> type diffusion layer 2 and n<SP>+</SP> type diffusion layer 3 are brought into contact with each other to thereby separate the outer edges of the p<SP>+</SP> type diffusion layer 2 and n<SP>+</SP> type diffusion layer 3 from each other. As a result, the p<SP>+</SP> type diffusion layer 2 and n<SP>+</SP> type diffusion layer 3 are arranged in close vicinity of each other with the recessed groove 1b interposed therebetween.
TW094140452A 2004-12-27 2005-11-17 Back junction solar cell and process for producing the same TW200635057A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004376604A JP2008066316A (en) 2004-12-27 2004-12-27 Backside bonding solar cell, and its fabrication process

Publications (1)

Publication Number Publication Date
TW200635057A true TW200635057A (en) 2006-10-01

Family

ID=36677461

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094140452A TW200635057A (en) 2004-12-27 2005-11-17 Back junction solar cell and process for producing the same

Country Status (3)

Country Link
JP (1) JP2008066316A (en)
TW (1) TW200635057A (en)
WO (1) WO2006075427A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5303828B2 (en) * 2006-09-14 2013-10-02 大日本印刷株式会社 Organic thin film solar cell
JP5093821B2 (en) * 2007-08-23 2012-12-12 シャープ株式会社 Back junction solar cell with wiring board, solar cell string and solar cell module
EP2324509A2 (en) * 2008-08-27 2011-05-25 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
US7999175B2 (en) * 2008-09-09 2011-08-16 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells with laser ablated grooves
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
KR101149173B1 (en) 2010-12-17 2012-05-25 현대중공업 주식회사 Back contact solar cell and method for fabricating the same
US8962424B2 (en) 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
US9812592B2 (en) * 2012-12-21 2017-11-07 Sunpower Corporation Metal-foil-assisted fabrication of thin-silicon solar cell
JP5708695B2 (en) * 2013-04-12 2015-04-30 トヨタ自動車株式会社 Solar cells
US9231129B2 (en) 2014-03-28 2016-01-05 Sunpower Corporation Foil-based metallization of solar cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5641362A (en) * 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JP2002057352A (en) * 2000-06-02 2002-02-22 Honda Motor Co Ltd Solar battery and manufacturing method
JP2003124483A (en) * 2001-10-17 2003-04-25 Toyota Motor Corp Photovoltaic element
JP2004071763A (en) * 2002-08-05 2004-03-04 Toyota Motor Corp Photovoltaic element

Also Published As

Publication number Publication date
JP2008066316A (en) 2008-03-21
WO2006075427A1 (en) 2006-07-20

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