JP4644828B2 - 大型炭化ケイ素デバイスおよびその製造方法 - Google Patents
大型炭化ケイ素デバイスおよびその製造方法 Download PDFInfo
- Publication number
- JP4644828B2 JP4644828B2 JP2003527810A JP2003527810A JP4644828B2 JP 4644828 B2 JP4644828 B2 JP 4644828B2 JP 2003527810 A JP2003527810 A JP 2003527810A JP 2003527810 A JP2003527810 A JP 2003527810A JP 4644828 B2 JP4644828 B2 JP 4644828B2
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- Prior art keywords
- silicon carbide
- region
- thyristor
- conductivity type
- layer
- Prior art date
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- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 215
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 209
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 31
- 235000012431 wafers Nutrition 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 86
- 239000000463 material Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 230000002950 deficient Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Description
Claims (6)
- 第1の導電型の炭化ケイ素基板と、
前記炭化ケイ素基板上で第2の導電型を有する第1の炭化ケイ素エピタキシャル層と、
前記第1の導電型で、かつ第2の炭化ケイ素エピタキシャル層を有する、前記基板と向かい合った前記第1の炭化ケイ素エピタキシャル層上の第1の炭化ケイ素領域と、
前記第1の炭化ケイ素エピタキシャル層と向かい合った前記第1の炭化ケイ素領域上で、前記第1の炭化ケイ素領域から突出している、前記第2の導電型で、かつ第3の炭化ケイ素エピタキシャル層を有する第2の炭化ケイ素領域と、
前記炭化ケイ素基板と前記第1の炭化ケイ素エピタキシャル層の間に配置された前記第1の導電型の炭化ケイ素層と、
前記第2の炭化ケイ素領域の上の第1の電極と、前記炭化ケイ素基板上の第2の電極と
を備えており、
前記第1および第2の炭化ケイ素領域は、前記第1の炭化ケイ素エピタキシャル層の一部が外部光源からの光で露光されるように構成されて光作動ゲート領域を備えるようにし、かつ、前記第1の炭化ケイ素エピタキシャル層が前記光作動ゲート領域内の光で、間にある炭化ケイ素層を該光が通過することなく露光される
ことを特徴とする炭化ケイ素サイリスタ。 - 前記第1の炭化ケイ素エピタキシャル層の露光部分に、前記第2の導電型で、かつ前記第1の炭化ケイ素エピタキシャル層のキャリア濃度より高いキャリア濃度の第3の領域をさらに備えたことを特徴とする請求項1に記載の炭化ケイ素サイリスタ。
- 前記第1の導電型はn型であり、前記第2の導電型はp型であることを特徴とする請求項1に記載の炭化ケイ素サイリスタ。
- 前記第1の導電型はp型であり、前記第2の導電型はn型であることを特徴とする請求項1に記載の炭化ケイ素サイリスタ。
- 前記第1および第2の炭化ケイ素領域が、中央の領域および該領域から延びているアーク形状の複数の領域を含む形状を有する構造を有する光作動ゲート領域を備えるために、前記中央の領域および該領域から延びている前記アーク形状の複数の領域を有する形状の前記第1の炭化ケイ素エピタキシャル層の一部分を外部光源からの光で露光するように構成されていることを特徴とする請求項1に記載の炭化ケイ素サイリスタ。
- 前記第1および第2の炭化ケイ素領域が前記第1の炭化ケイ素エピタキシャル層の第2のフィンガ部を外部光源からの光で露光するように構成された複数の第1のフィンガ)を備えることで、前記第1および第2の領域に対応する前記第1のフィンガと交互に配列される第2のフィンガ部を有する光作動ゲート領域を構成するようにしたことを特徴とする請求項1に記載の炭化ケイ素サイリスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/952,064 US6770911B2 (en) | 2001-09-12 | 2001-09-12 | Large area silicon carbide devices |
PCT/US2002/030300 WO2003023870A1 (en) | 2001-09-12 | 2002-09-10 | Large area silicon carbide devices and manufacturing methods therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005503024A JP2005503024A (ja) | 2005-01-27 |
JP4644828B2 true JP4644828B2 (ja) | 2011-03-09 |
Family
ID=25492546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003527810A Expired - Lifetime JP4644828B2 (ja) | 2001-09-12 | 2002-09-10 | 大型炭化ケイ素デバイスおよびその製造方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US6770911B2 (ja) |
EP (1) | EP1428268B1 (ja) |
JP (1) | JP4644828B2 (ja) |
KR (1) | KR20040033300A (ja) |
CN (1) | CN1586014A (ja) |
AT (1) | ATE457528T1 (ja) |
CA (1) | CA2459336A1 (ja) |
DE (1) | DE60235312D1 (ja) |
WO (1) | WO2003023870A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6982440B2 (en) * | 2002-02-19 | 2006-01-03 | Powersicel, Inc. | Silicon carbide semiconductor devices with a regrown contact layer |
US7057214B2 (en) * | 2003-07-01 | 2006-06-06 | Optiswitch Technology Corporation | Light-activated semiconductor switches |
US7679223B2 (en) * | 2005-05-13 | 2010-03-16 | Cree, Inc. | Optically triggered wide bandgap bipolar power switching devices and circuits |
US7391057B2 (en) * | 2005-05-18 | 2008-06-24 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US7615801B2 (en) * | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US20060261346A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US7582917B2 (en) * | 2006-03-10 | 2009-09-01 | Bae Systems Information And Electronic Systems Integration Inc. | Monolithically integrated light-activated thyristor and method |
US8193537B2 (en) * | 2006-06-19 | 2012-06-05 | Ss Sc Ip, Llc | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
US7977821B2 (en) * | 2007-05-10 | 2011-07-12 | Honeywell International Inc. | High power density switch module with improved thermal management and packaging |
US7800196B2 (en) * | 2008-09-30 | 2010-09-21 | Northrop Grumman Systems Corporation | Semiconductor structure with an electric field stop layer for improved edge termination capability |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
US8816715B2 (en) * | 2011-05-12 | 2014-08-26 | Nanya Technology Corp. | MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test |
US9171977B2 (en) | 2011-06-17 | 2015-10-27 | Cree, Inc. | Optically assist-triggered wide bandgap thyristors having positive temperature coefficients |
US9633998B2 (en) * | 2012-09-13 | 2017-04-25 | General Electric Company | Semiconductor device and method for making the same |
CN103579016B (zh) * | 2013-11-04 | 2017-06-23 | 株洲南车时代电气股份有限公司 | 一种大电流碳化硅sbd/jbs功率芯片结构及其制造方法 |
CN108878523B (zh) * | 2018-07-11 | 2021-06-15 | 北京优捷敏半导体技术有限公司 | 一种碳化硅门极可关断晶闸管及其制造方法 |
TWI822438B (zh) * | 2022-11-02 | 2023-11-11 | 台亞半導體股份有限公司 | 碳化矽檢光閘流體與製造方法 |
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-
2001
- 2001-09-12 US US09/952,064 patent/US6770911B2/en not_active Expired - Lifetime
-
2002
- 2002-09-10 JP JP2003527810A patent/JP4644828B2/ja not_active Expired - Lifetime
- 2002-09-10 CA CA002459336A patent/CA2459336A1/en not_active Abandoned
- 2002-09-10 DE DE60235312T patent/DE60235312D1/de not_active Expired - Lifetime
- 2002-09-10 KR KR10-2004-7003475A patent/KR20040033300A/ko not_active Application Discontinuation
- 2002-09-10 AT AT02763708T patent/ATE457528T1/de not_active IP Right Cessation
- 2002-09-10 WO PCT/US2002/030300 patent/WO2003023870A1/en active Application Filing
- 2002-09-10 CN CNA028224124A patent/CN1586014A/zh active Pending
- 2002-09-10 EP EP02763708A patent/EP1428268B1/en not_active Expired - Lifetime
-
2004
- 2004-05-14 US US10/845,913 patent/US7135359B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS50104877A (ja) * | 1974-01-18 | 1975-08-19 | ||
JPS53112682A (en) * | 1977-03-14 | 1978-10-02 | Mitsubishi Electric Corp | Photo thyristor |
JPS54128686A (en) * | 1978-03-29 | 1979-10-05 | Fuji Electric Co Ltd | Photo trigger thyristor |
JPS5989463A (ja) * | 1982-11-15 | 1984-05-23 | Toshiba Corp | サイリスタ |
JPH01236670A (ja) * | 1988-03-17 | 1989-09-21 | Nec Corp | 半導体素子 |
JPH0210855A (ja) * | 1988-04-08 | 1990-01-16 | General Electric Co (Ge) | 並列素子の自動化選別相互接続方法 |
US5663580A (en) * | 1996-03-15 | 1997-09-02 | Abb Research Ltd. | Optically triggered semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
ATE457528T1 (de) | 2010-02-15 |
US20030047748A1 (en) | 2003-03-13 |
US6770911B2 (en) | 2004-08-03 |
US7135359B2 (en) | 2006-11-14 |
KR20040033300A (ko) | 2004-04-21 |
DE60235312D1 (de) | 2010-03-25 |
WO2003023870A1 (en) | 2003-03-20 |
JP2005503024A (ja) | 2005-01-27 |
CN1586014A (zh) | 2005-02-23 |
CA2459336A1 (en) | 2003-03-20 |
EP1428268B1 (en) | 2010-02-10 |
EP1428268A1 (en) | 2004-06-16 |
US20040206976A1 (en) | 2004-10-21 |
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