JP5627243B2 - 太陽電池及び太陽電池の製造方法 - Google Patents
太陽電池及び太陽電池の製造方法 Download PDFInfo
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- JP5627243B2 JP5627243B2 JP2010017369A JP2010017369A JP5627243B2 JP 5627243 B2 JP5627243 B2 JP 5627243B2 JP 2010017369 A JP2010017369 A JP 2010017369A JP 2010017369 A JP2010017369 A JP 2010017369A JP 5627243 B2 JP5627243 B2 JP 5627243B2
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- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 359
- 239000000758 substrate Substances 0.000 claims description 113
- 239000012535 impurity Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 2
- 230000004888 barrier function Effects 0.000 description 19
- 239000002585 base Substances 0.000 description 13
- 239000000969 carrier Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Description
本発明の実施形態に係る太陽電池1の概略構成について、図1及び図2を参照しながら説明する。図1は、本発明の実施形態に係る太陽電池1を裏面側から視た平面図である。図2は、図1のA−A線における拡大断面図である。
太陽電池1の製造方法について、図3から図8を用いて説明する。図3は、本発明の実施形態に係る太陽電池1の製造方法を説明するためのフローチャートである。図4から図8は、本発明の実施形態に係る太陽電池1の製造方法を説明するための図である。
太陽電池1によれば、半導体基板10の裏面側に複数の凸部50が形成され、第2半導体層30は、一の凸部50aと一の凸部50aに隣接した他の凸部50bとの間に位置する半導体基板10上に形成され、一の凸部50aと他の凸部50bとによって、第2半導体層30を底部57とする凹部55が形成される。このため、レジスト60を印刷する際に、メタルマスクやスクリーンは、一の凸部50aと他の凸部50bとに阻まれて、第2半導体層30に接触する可能性が低下する。結果、第2半導体層30と半導体基板10との接合部分に傷が生じるのを抑制できる。メタルマスクやスクリーンだけでなく、ハンドリング時における他の物理的接触も抑制できる。第1半導体領域20は、凸部50に形成される。さらに、第1半導体領域20は、半導体基板10と同一の結晶状態であり、接合が表面より深い部分にある。このため、半導体基板10と第1半導体領域20との接合部分は、傷が生じ難い。
上述したように、本発明の実施形態を通じて本発明の内容を開示したが、この開示の一部をなす論述及び図面は、本発明を限定するものであると理解すべきではない。
Claims (9)
- 受光面と裏面とを有する半導体基板と、第1導電型を有する第1半導体領域と、第2導電型を有する第2半導体層とを備え、
前記第1半導体領域及び前記第2半導体層は、前記裏面側に形成される太陽電池であって、
前記半導体基板は、前記裏面に複数の凸部を有し、
前記複数の凸部の一の凸部と、他の凸部と、によって凹部は構成され、
前記第1半導体領域は、前記複数の凸部の表面に形成され、前記半導体基板の表面に不純物を混入させた拡散層からなり、
前記第2半導体層は、前記凹部に非晶質半導体を積層して形成される太陽電池。 - 前記凸部の高さは、前記第2半導体層の厚さよりも大きい請求項1に記載の太陽電池。
- 前記一の凸部と前記一の凸部に隣接した前記他の凸部との間隔は、5mm以内である請求項1又は2に記載の太陽電池。
- 前記半導体基板は、第1導電型である請求項1から3のいずれか1項に記載の太陽電池。
- 前記第2半導体層は、前記第1半導体領域上にも形成されている請求項1から4のいずれか1項に記載の太陽電池。
- 前記第2半導体層は、前記半導体基板上にi型非晶質半導体層と第2導電型を有する非晶質半導体層とが順次形成されている請求項1から5のいずれか1項に記載の太陽電池。
- 受光面と裏面とを有する半導体基板の裏面側に、第1導電型を有する第1半導体領域を形成する工程S1と、裏面上に、第2導電型を有する第2半導体層を形成する工程S2とを有する太陽電池の製造方法であって、
前記工程S1は、前記半導体基板を加熱し、前記半導体基板に不純物を混入させることにより、前記半導体基板の表面に前記第1半導体領域が形成される工程を有し、
前記工程S2は、
間隔を空けて前記第1半導体領域を除去することにより、前記半導体基板の表面に前記第1半導体領域が形成された複数の凸部と、凹部と、を形成する工程S21と、
前記凹部に非晶質半導体を積層して前記第2半導体層を形成する工程S22とを有する太陽電池の製造方法。 - 前記工程S22は、前記第1半導体領域上にも前記第2半導体層を形成する請求項7に記載の太陽電池の製造方法。
- 前記工程S22は、前記第2半導体層として、前記半導体基板上にi型非晶質半導体層と第2導電型を有する非晶質半導体層とを順次形成する請求項7又は8に記載の太陽電池の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2010017369A JP5627243B2 (ja) | 2010-01-28 | 2010-01-28 | 太陽電池及び太陽電池の製造方法 |
PCT/JP2011/051561 WO2011093361A1 (ja) | 2010-01-28 | 2011-01-27 | 太陽電池及び太陽電池の製造方法 |
US13/559,777 US20120325309A1 (en) | 2010-01-28 | 2012-07-27 | Solar cell and solar cell manufacturing method |
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JP2010017369A JP5627243B2 (ja) | 2010-01-28 | 2010-01-28 | 太陽電池及び太陽電池の製造方法 |
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JP2011155229A JP2011155229A (ja) | 2011-08-11 |
JP5627243B2 true JP5627243B2 (ja) | 2014-11-19 |
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WO (1) | WO2011093361A1 (ja) |
Families Citing this family (16)
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JP5974300B2 (ja) * | 2010-08-24 | 2016-08-23 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
WO2013027591A1 (ja) * | 2011-08-25 | 2013-02-28 | 三洋電機株式会社 | 太陽電池及び太陽電池モジュール |
WO2013031296A1 (ja) * | 2011-08-31 | 2013-03-07 | 三洋電機株式会社 | 太陽電池モジュール |
CN103875082B (zh) * | 2011-10-11 | 2016-04-20 | 三菱电机株式会社 | 光伏装置的制造方法及光伏装置 |
TWI559563B (zh) * | 2011-12-21 | 2016-11-21 | 太陽電子公司 | 混合式多晶矽異質接面背接觸電池 |
JP2015133341A (ja) * | 2012-04-27 | 2015-07-23 | パナソニック株式会社 | 裏面接合型太陽電池及びその製造方法 |
CN103681891A (zh) * | 2012-09-25 | 2014-03-26 | 茂迪(苏州)新能源有限公司 | 太阳能电池及其模组 |
KR101622090B1 (ko) * | 2013-11-08 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 |
TWI462320B (zh) * | 2013-11-11 | 2014-11-21 | Neo Solar Power Corp | 背接觸式太陽能電池 |
JP6311968B2 (ja) * | 2014-03-14 | 2018-04-18 | パナソニックIpマネジメント株式会社 | 太陽電池 |
KR101867855B1 (ko) * | 2014-03-17 | 2018-06-15 | 엘지전자 주식회사 | 태양 전지 |
JP6774163B2 (ja) | 2014-12-03 | 2020-10-21 | シャープ株式会社 | 光電変換装置 |
NL2014040B1 (en) * | 2014-12-23 | 2016-10-12 | Stichting Energieonderzoek Centrum Nederland | Method of making a curent collecting grid for solar cells. |
WO2017018379A1 (ja) * | 2015-07-24 | 2017-02-02 | 京セラ株式会社 | 太陽電池素子および太陽電池モジュール |
JP6781157B2 (ja) * | 2015-09-16 | 2020-11-04 | シャープ株式会社 | 光電変換素子及びその製造方法 |
JP6583753B2 (ja) * | 2018-03-08 | 2019-10-02 | パナソニックIpマネジメント株式会社 | 太陽電池 |
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US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
JP2875382B2 (ja) * | 1990-11-26 | 1999-03-31 | 株式会社日立製作所 | 太陽電池素子 |
JP2001267610A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | 太陽電池 |
ES2289168T3 (es) * | 2001-11-26 | 2008-02-01 | Shell Solar Gmbh | Celula solar con contactos en la parte posterior y su procedimiento de fabricacion. |
US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
JP3998619B2 (ja) * | 2003-09-24 | 2007-10-31 | 三洋電機株式会社 | 光起電力素子およびその製造方法 |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
KR101099480B1 (ko) * | 2009-02-13 | 2011-12-27 | 엘지전자 주식회사 | 태양전지 및 그의 제조방법과 기판 식각 방법 |
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2011
- 2011-01-27 WO PCT/JP2011/051561 patent/WO2011093361A1/ja active Application Filing
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- 2012-07-27 US US13/559,777 patent/US20120325309A1/en not_active Abandoned
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