JP5388970B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP5388970B2 JP5388970B2 JP2010187408A JP2010187408A JP5388970B2 JP 5388970 B2 JP5388970 B2 JP 5388970B2 JP 2010187408 A JP2010187408 A JP 2010187408A JP 2010187408 A JP2010187408 A JP 2010187408A JP 5388970 B2 JP5388970 B2 JP 5388970B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 222
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 251
- 238000005530 etching Methods 0.000 description 30
- 238000010248 power generation Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 10
- 239000002344 surface layer Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 229910017855 NH 4 F Inorganic materials 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/548—Amorphous silicon PV cells
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- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
(太陽電池1の構成)
まず、本実施形態において製造される太陽電池1の構成について、図1及び図2を参照しながら詳細に説明する。
図13は、第2の実施形態における太陽電池の略図的断面図である。
上記第1の実施形態に係る太陽電池1と実質的に同様の太陽電池を上記第1の実施形態に記載の方法で製造した。製造した太陽電池の直列抵抗と変換効率とを、ワコム社製ソーラーシミュレーターを用いて測定した。結果を下記の表1に示す。
絶縁層23のエッチングをフッ酸を用いて行い、バッファードフッ酸によるn型非晶質半導体層12nの露出部12n1の洗浄を行わなかったこと以外は、上記実施例と同様にして太陽電池を製造し、同様に、直列抵抗と変換効率とを測定した。結果を下記の表1に示す。
10…半導体基板
10a…受光面
10b…裏面
11…光
12…IN積層体
12i…i型非晶質半導体層
12n…n型非晶質半導体層
12n1…露出部
13…IP積層体
13i…i型非晶質半導体層
13p…p型非晶質半導体層
14…n側電極
15…p側電極
16…絶縁層
17i…i型非晶質半導体層
17n…n型非晶質半導体層
18…絶縁層
19a…第1の導電層
19b…第2の導電層
19c…第3の導電層
19d…第4の導電層
21…i型非晶質半導体層
22…n型非晶質半導体層
23…絶縁層
24…i型非晶質半導体層
25…p型非晶質半導体層
26,27…導電層
30…非晶質半導体基板
30b…裏面
31n…n+型領域
Claims (7)
- 第1及び第2の主面を有する半導体基板と、前記第1の主面の上に形成されており、第1の導電型の半導体からなる第1の半導体層と、前記第1の主面の上に一部が絶縁層を介して前記第1の半導体層と重畳するように形成されており、第2の導電型の半導体からなる第2の半導体層と、前記第1の半導体層の上に形成されている第1の電極と、前記第2の半導体層の上に形成されている第2の電極とを有する太陽電池の製造方法であって、
前記第1の半導体層を形成する工程と、
前記第1の半導体層の上に前記絶縁層を形成する工程と、
前記絶縁層の少なくとも一部を除去することにより、前記第1の半導体層の一部を露出させる工程と、
前記第1の半導体層の前記絶縁層からの露出部をバッファードフッ酸により洗浄する工程と、
前記第1の半導体層の前記絶縁層からの露出部の上に前記第1の電極を形成する工程と、
を備える、太陽電池の製造方法。 - バッファードフッ酸により、前記絶縁層の少なくとも一部の除去と、前記第1の半導体層の露出部の洗浄とを連続して行う、請求項1に記載の太陽電池の製造方法。
- 窒化シリコン、酸化シリコンまたは酸窒化シリコンにより前記絶縁膜を形成する、請求項1または2に記載の太陽電池の製造方法。
- 前記第1の主面の一部の上に位置する前記第1の半導体層と、前記第1の半導体層を覆う前記絶縁層とを形成した後に、前記絶縁層及び前記第1の主面の露出部を覆うように第2の半導体層を形成する工程と、
前記第2の半導体層の前記絶縁膜を覆う部分の一部を除去する工程と、
をさらに備え、
前記絶縁膜の前記第2の半導体層からの露出部を除去することにより、前記第1の半導体層を露出させる、請求項1に記載の太陽電池の製造方法。 - 前記半導体基板として、結晶シリコン基板を用いる、請求項1〜4のいずれか一項に記載の太陽電池の製造方法。
- 前記第1の半導体層を、非晶質半導体により形成する、請求項1〜5のいずれか一項に記載の太陽電池の製造方法。
- 前記第2の半導体層を、非晶質半導体により形成する、請求項1〜6のいずれか一項に記載の太陽電池の製造方法。
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JP2010187408A JP5388970B2 (ja) | 2010-08-24 | 2010-08-24 | 太陽電池の製造方法 |
PCT/JP2011/068879 WO2012026428A1 (ja) | 2010-08-24 | 2011-08-22 | 太陽電池の製造方法 |
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JP2010187408A JP5388970B2 (ja) | 2010-08-24 | 2010-08-24 | 太陽電池の製造方法 |
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JP2012049193A JP2012049193A (ja) | 2012-03-08 |
JP5388970B2 true JP5388970B2 (ja) | 2014-01-15 |
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WO (1) | WO2012026428A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012132654A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
WO2012132835A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
WO2012132838A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置の製造方法 |
WO2012132655A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
EP2693488A4 (en) * | 2011-03-28 | 2014-10-15 | Sanyo Electric Co | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
JPWO2013141232A1 (ja) * | 2012-03-23 | 2015-08-03 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
JP6167414B2 (ja) * | 2013-09-25 | 2017-07-26 | パナソニックIpマネジメント株式会社 | 太陽電池および太陽電池モジュール |
JP6311911B2 (ja) * | 2013-09-25 | 2018-04-18 | パナソニックIpマネジメント株式会社 | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 |
WO2015045242A1 (ja) * | 2013-09-25 | 2015-04-02 | パナソニックIpマネジメント株式会社 | 太陽電池、太陽電池モジュールおよび太陽電池の製造方法 |
KR101622090B1 (ko) * | 2013-11-08 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 |
WO2020149128A1 (ja) * | 2019-01-18 | 2020-07-23 | 株式会社カネカ | 太陽電池の製造方法 |
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JPH05206054A (ja) * | 1992-01-29 | 1993-08-13 | Nec Corp | Alコンタクト構造およびその製造方法 |
JP2727902B2 (ja) * | 1993-01-18 | 1998-03-18 | 日本電気株式会社 | Alコンタクト構造 |
JPH07183250A (ja) * | 1993-12-24 | 1995-07-21 | Sharp Corp | コンタクト形成方法 |
JP3175696B2 (ja) * | 1998-06-10 | 2001-06-11 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2001267610A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | 太陽電池 |
JP2004221142A (ja) * | 2003-01-10 | 2004-08-05 | Sanyo Electric Co Ltd | 光起電力装置およびその製造方法 |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
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