JP5974300B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 18
- 238000009713 electroplating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 58
- 239000004065 semiconductor Substances 0.000 description 57
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 9
- 239000000969 carrier Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 244000126211 Hericium coralloides Species 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
図8は、第2の実施形態に係る太陽電池の略図的断面図である。
図9は、第3の実施形態に係る太陽電池の略図的平面図である。
上記第1の実施形態では、n側電極11とp側電極12とのそれぞれの全ての角部がR形状に形成されている場合について説明した。但し、本発明は、この構成に限定されない。例えば、フィンガー11a、12aの先端部11a1,12a1の角部のみが面取りされた形状に形成されていてもよい。
10…太陽電池基板
10a…裏面
10a1…p型領域
10a2…n型領域
10b…受光面
11…n側電極
12…p側電極
11a、12a…フィンガー
11b、12b…バスバー
14n…n型半導体層
14p…p型半導体層
15…半導体基板
17…シード層
18…めっき膜
Claims (5)
- p型表面及びn型表面が露出している主面を有する太陽電池基板と、前記p型表面の上に形成されており、第1の方向に沿って線状に延びる第1の線状部を含むp側電極と、前記n型表面の上において、前記第1の方向に沿って線状に延びるように形成されており、前記第1の方向に対して垂直な第2の方向において前記第1の線状部と隣接している第2の線状部を含むn側電極とを備え、前記第1及び第2の線状部の少なくとも一方の先端部の角部がR形状に形成されている太陽電池の製造方法であって、
前記第1の方向に沿って線状に延び、先端部の角部がR形状の前記p型表面及び前記n型表面を形成し、
前記p型またはn型表面の上に設けられており先端部の角部がR形状であるシード層を形成し、
前記シード層の上にめっき膜を形成して前記p側電極および前記n側電極を形成する、太陽電池の製造方法。 - 前記めっき膜を電解めっきにより形成する、請求項1に記載の太陽電池の製造方法。
- 前記第1及び第2の線状部の少なくとも一方の先端部が半円状に形成されている、請求項2に記載の太陽電池の製造方法。
- 前記p側電極は、前記第1の線状部が接続されている第1のバスバーをさらに含み、
前記n型電極は、前記第2の線状部が接続されている第2のバスバーをさらに含み、
前記第1及び第2の線状部の少なくとも一方と、前記第1または第2のバスバーとの接続部の角部がR形状に形成されている、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。 - 前記第1及び第2のバスバーのそれぞれは、前記第2または第1の線状部と前記第1の方向において対向するように配置されており、
前記第1及び第2のバスバーのうちの少なくとも一方の、前記第2または第1の線状部の先端部と前記第1の方向において対向している部分は、当該先端部に対応した形状に形成されている、請求項4に記載の太陽電池の製造方法。
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JP2010187407 | 2010-08-24 | ||
JP2010187407 | 2010-08-24 | ||
PCT/JP2011/068543 WO2012026358A1 (ja) | 2010-08-24 | 2011-08-16 | 太陽電池及びその製造方法 |
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JPWO2012026358A1 JPWO2012026358A1 (ja) | 2013-10-28 |
JP5974300B2 true JP5974300B2 (ja) | 2016-08-23 |
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US (2) | US20130160847A1 (ja) |
JP (1) | JP5974300B2 (ja) |
WO (1) | WO2012026358A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2013027591A1 (ja) * | 2011-08-25 | 2013-02-28 | 三洋電機株式会社 | 太陽電池及び太陽電池モジュール |
KR101622089B1 (ko) * | 2013-07-05 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
CN103400870A (zh) * | 2013-08-02 | 2013-11-20 | 浙江正泰太阳能科技有限公司 | 太阳能电池片及其电极图形设计和太阳能电池组件 |
WO2019008955A1 (ja) * | 2017-07-03 | 2019-01-10 | 株式会社カネカ | 太陽電池および太陽電池モジュール |
JPWO2019092885A1 (ja) * | 2017-11-13 | 2020-02-27 | 三菱電機株式会社 | 太陽電池モジュール |
Citations (6)
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JP5261110B2 (ja) * | 2008-09-29 | 2013-08-14 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
EP2200082A1 (en) * | 2008-12-19 | 2010-06-23 | STMicroelectronics Srl | Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication process |
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JP2010283339A (ja) * | 2009-05-02 | 2010-12-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置及びその作製方法 |
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JP5231515B2 (ja) * | 2010-12-17 | 2013-07-10 | シャープ株式会社 | 太陽電池の製造方法 |
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JPH05259488A (ja) * | 1992-03-11 | 1993-10-08 | Hitachi Ltd | シリコン太陽電池素子及び製造方法 |
JP2006324504A (ja) * | 2005-05-19 | 2006-11-30 | Shin Etsu Handotai Co Ltd | 太陽電池 |
WO2007060743A1 (ja) * | 2005-11-28 | 2007-05-31 | Mitsubishi Denki Kabushiki Kaisha | 太陽電池セル |
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WO2012026358A1 (ja) | 2012-03-01 |
US20150162488A1 (en) | 2015-06-11 |
JPWO2012026358A1 (ja) | 2013-10-28 |
US20130160847A1 (en) | 2013-06-27 |
US9660132B2 (en) | 2017-05-23 |
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