JP5261110B2 - 太陽電池の製造方法及び太陽電池 - Google Patents
太陽電池の製造方法及び太陽電池 Download PDFInfo
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- JP5261110B2 JP5261110B2 JP2008250737A JP2008250737A JP5261110B2 JP 5261110 B2 JP5261110 B2 JP 5261110B2 JP 2008250737 A JP2008250737 A JP 2008250737A JP 2008250737 A JP2008250737 A JP 2008250737A JP 5261110 B2 JP5261110 B2 JP 5261110B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 173
- 239000000758 substrate Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 15
- 238000007639 printing Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 229920001187 thermosetting polymer Polymers 0.000 description 15
- 239000000969 carrier Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 239000011231 conductive filler Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
以下において、本発明の実施形態に係る太陽電池の構成について、図面を参照しながら説明する。図1は、太陽電池100の裏面側の平面図である。図2は、図1のA−A線における拡大断面図である。
次に、太陽電池100の製造方法について、図面を参照しながら説明する。
本実施形態に係る太陽電池100の製造方法において、メタルマスクM1は、2本の島状n型非晶質半導体層12n1の形成パターンに応じた2つの開口部H1と、2つの開口部H1の間に形成され渡り部Pとを有する。そのため、各開口部H1の幅を狭くしても、メタルマスクM1の強度を維持することができる。その結果、n型非晶質半導体層12nを微細に形成することができるとともに、基板の傷つきや形成パターンのずれの発生を抑制できる。また、本実施形態に係る太陽電池100の製造方法では、印刷法を用いてn側導電層13n2を形成するので、2本の島状n型非晶質半導体層12n1を跨るように線幅の細いn側導電層13n2を形成することができる。従って、高い変換効率を有する太陽電池を製造することができる。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
11…i型非晶質半導体層
12n…n型非晶質半導体層
12n1…型非晶質半導体層
12p…p型非晶質半導体層
13n…n側収集電極
13n1…n側透明導電層
13n2…n側導電層
13p…p側収集電極
13p1…p側透明導電層
13p2…p側導電層
100…太陽電池
H1〜4…開口部
M1〜3…メタルマスク
P…渡り部
Claims (5)
- 受光面と、前記受光面の反対側に設けられる裏面とを有する半導体基板と、前記裏面の略全面を覆うi型非晶質半導体層と、を備える太陽電池の製造方法であって、
前記i型非晶質半導体層上に一導電型半導体層を所定の方向に沿って形成する工程Aと、
前記i型非晶質半導体層上に他導電型半導体層を前記所定の方向に沿って形成する工程Bと、
前記一導電型半導体層上及び前記他導電型半導体層上それぞれに導電性ペーストを用いて導電層を形成する工程Cと
を備え、
前記工程Aにおいて、前記一導電型半導体層を、前記所定の方向に沿って配置される複数の島状半導体層を有するように形成し、
前記工程Cにおいて、前記一導電型半導体層上に形成される前記導電層を、印刷法を用いて前記複数の島状半導体層上に跨るとともに、前記複数の島状半導体層のそれぞれの間において前記i型非晶質半導体層と接するように形成する
ことを特徴とする太陽電池の製造方法。 - 前記工程Aにおいて、
前記複数の島状半導体層に対応する複数の開口部と、互いに隣接する開口部間を接続する渡り部とを有するメタルマスクを用いて、前記一導電型半導体層を形成する
ことを特徴とする請求項1に記載の太陽電池の製造方法。 - 前記半導体基板として一導電型を有する基板を用い、
前記工程Bにおいて、
前記他導電型半導体層を、前記一導電型半導体層の幅よりも大きい幅に形成する
ことを特徴とする請求項1又は2に記載の太陽電池の製造方法。 - 受光面と、前記受光面の反対側に設けられる裏面とを有する半導体基板と、
前記裏面の略全面を覆うi型非晶質半導体層と、
前記i型非晶質半導体層上において、所定の方向に沿って形成される一導電型半導体層と、
前記i型非晶質半導体層上において、前記所定の方向に沿って形成される他導電型半導体層と、
前記一導電型半導体層上及び前記他導電型半導体層上それぞれに形成される導電層と
を備え、
前記一導電型半導体層は、前記所定の方向に沿って配置される複数の島状半導体層を有し、
前記一導電型半導体層上に形成される前記導電層は、導電性ペーストを用い、前記複数の島状半導体層上に跨るとともに、前記複数の島状半導体層のそれぞれの間において前記i型非晶質半導体層と接している
ことを特徴とする太陽電池。 - 前記半導体基板は、一導電型を有し、
前記他導電型半導体層は、前記一導電型半導体層の幅よりも大きい幅を有する
ことを特徴とする請求項4に記載の太陽電池。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008250737A JP5261110B2 (ja) | 2008-09-29 | 2008-09-29 | 太陽電池の製造方法及び太陽電池 |
US12/562,907 US9246034B2 (en) | 2008-09-29 | 2009-09-18 | Solar cell and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008250737A JP5261110B2 (ja) | 2008-09-29 | 2008-09-29 | 太陽電池の製造方法及び太陽電池 |
Related Child Applications (1)
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JP2010216293A Division JP2010283406A (ja) | 2010-09-28 | 2010-09-28 | 太陽電池 |
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JP2010080888A JP2010080888A (ja) | 2010-04-08 |
JP5261110B2 true JP5261110B2 (ja) | 2013-08-14 |
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JP2008250737A Expired - Fee Related JP5261110B2 (ja) | 2008-09-29 | 2008-09-29 | 太陽電池の製造方法及び太陽電池 |
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US (1) | US9246034B2 (ja) |
JP (1) | JP5261110B2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011149021A1 (ja) * | 2010-05-28 | 2011-12-01 | 株式会社エバテック | 光起電力素子の製造方法及び光起電力素子 |
WO2012026358A1 (ja) * | 2010-08-24 | 2012-03-01 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
JPWO2012132834A1 (ja) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
GB2491209B (en) | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
KR101948206B1 (ko) | 2012-03-02 | 2019-02-14 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양 전지와, 이의 제조 방법 |
WO2013145008A1 (ja) * | 2012-03-29 | 2013-10-03 | 三菱電機株式会社 | 光起電力素子およびその製造方法、太陽電池モジュール |
JP6701170B2 (ja) | 2015-03-13 | 2020-05-27 | シャープ株式会社 | 光電変換素子及び光電変換モジュール |
CN105097068B (zh) * | 2015-06-25 | 2017-03-08 | 英利能源(中国)有限公司 | 导电胶、太阳能电池串及其制备方法 |
JP1546718S (ja) * | 2015-08-19 | 2019-03-18 | ||
JP1546719S (ja) * | 2015-08-19 | 2019-03-18 | ||
CN108028290B (zh) * | 2015-09-14 | 2019-09-03 | 夏普株式会社 | 光电转换元件 |
JP6639295B2 (ja) * | 2016-03-23 | 2020-02-05 | シャープ株式会社 | 光電変換装置、光電変換モジュールおよび太陽光発電システム |
US10141462B2 (en) * | 2016-12-19 | 2018-11-27 | Sunpower Corporation | Solar cells having differentiated P-type and N-type architectures |
JP7323107B2 (ja) * | 2018-03-26 | 2023-08-08 | シャープ株式会社 | 光電変換素子 |
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US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
JPS62276504A (ja) * | 1986-05-23 | 1987-12-01 | Citizen Watch Co Ltd | カラ−フイルタ−染色用マスク |
JPS63287077A (ja) | 1987-05-20 | 1988-11-24 | Hitachi Ltd | 光電変換デバイス |
US5428249A (en) * | 1992-07-15 | 1995-06-27 | Canon Kabushiki Kaisha | Photovoltaic device with improved collector electrode |
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EP1548868A4 (en) * | 2002-10-03 | 2009-08-12 | Fujikura Ltd | ELECTRODE SUBSTRATE, PHOTOELECTRIC CONVERSION ELEMENT, CONDUCTIVE GLASS SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF, AND PIGMENT SENSITIZATION SOLAR CELL |
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JP4511146B2 (ja) * | 2003-09-26 | 2010-07-28 | 三洋電機株式会社 | 光起電力素子およびその製造方法 |
JP4641858B2 (ja) * | 2005-04-22 | 2011-03-02 | シャープ株式会社 | 太陽電池 |
JP2006341547A (ja) * | 2005-06-10 | 2006-12-21 | Sharp Corp | 印刷用マスク、スクリーン印刷方法および光電変換素子の製造方法ならびに光電変換素子 |
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- 2008-09-29 JP JP2008250737A patent/JP5261110B2/ja not_active Expired - Fee Related
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US20100078069A1 (en) | 2010-04-01 |
JP2010080888A (ja) | 2010-04-08 |
US9246034B2 (en) | 2016-01-26 |
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