JPWO2012132834A1 - 太陽電池及び太陽電池の製造方法 - Google Patents
太陽電池及び太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 250
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000010408 film Substances 0.000 description 25
- 239000002019 doping agent Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- -1 SiO 2 Chemical compound 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
(太陽電池1の構成)
図1は、第1の実施形態における太陽電池の裏面側の略図的平面図である。図2は、図1の線II−IIにおける略図的断面図である。
10…半導体基板
12,13…半導体層
12a、13a…線状部
12i、13i…i型半導体層
12n…n型半導体層
13p…p型半導体層
14…n側電極
15…p側電極
Claims (7)
- 一の導電型を有する半導体基板と、
前記半導体基板の一の主面の上に配されており、一の導電型を有する第1の半導体層と、
前記半導体基板の一の主面の上に配されており、他の導電型を有する第2の半導体層と、
前記第1の半導体層に電気的に接続されている第1の電極と、
前記第2の半導体層に電気的に接続されている第2の電極と、
を備え、
前記第2の半導体層の厚みが前記第1の半導体層の厚みよりも薄い、太陽電池。 - 前記第1及び第2の半導体層のそれぞれは、複数の線状部を有し、
前記第1の半導体層の線状部の幅は、前記第2の半導体層の線状部の幅よりも小さい、請求項1に記載の太陽電池。 - 前記第1の半導体層は、水素を含む、請求項1または2に記載の太陽電池。
- 前記第1の半導体層と前記半導体基板との間に配されている第1のi型半導体層をさらに備える、請求項1〜3のいずれか一項に記載の太陽電池。
- 前記第2の半導体層と前記半導体層との間に配されている第2のi型半導体層をさらに備え、
前記第2のi型半導体層は、前記第1のi型半導体層よりも薄い、請求項4に記載の太陽電池。 - 前記半導体基板の他主面が受光面である、請求項1〜5のいずれか一項に記載の太陽電池。
- 一の導電型を有する半導体基板の一主面の一部の上に、一の導電型を有する第1の半導体層を形成する工程と、
前記第1の半導体層を含み、前記半導体基板の一主面の上に、他の導電型を有する半導体膜を形成する工程と、
前記半導体膜の前記第1の半導体層の上に位置している部分の少なくとも一部を除去することにより、前記第1の半導体層を露出させると共に、前記半導体膜から前記第2の半導体層を形成する工程と、
前記第1の半導体層の上に前記第1の電極を形成すると共に、前記第2の半導体層の上に前記第2の電極を形成する工程と、
を備え、
前記第1の半導体層の厚みは、前記第1の半導体層の厚みよりも薄い、太陽電池の製造方法。
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JP2011070195 | 2011-03-28 | ||
JP2011070195 | 2011-03-28 | ||
PCT/JP2012/056095 WO2012132834A1 (ja) | 2011-03-28 | 2012-03-09 | 太陽電池及び太陽電池の製造方法 |
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JPWO2012132834A1 true JPWO2012132834A1 (ja) | 2014-07-28 |
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US (1) | US20140020741A1 (ja) |
JP (1) | JPWO2012132834A1 (ja) |
WO (1) | WO2012132834A1 (ja) |
Families Citing this family (2)
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WO2015131923A1 (de) * | 2014-03-03 | 2015-09-11 | G. Lufft Mess- Und Regeltechnik Gmbh | Fahrzeugscheinwerfer mit einer vorrichtung zum bestimmen von strassenverhältnissen und system zur überwachung von strassenverhältnissen |
JP2021129085A (ja) * | 2020-02-17 | 2021-09-02 | パナソニック株式会社 | 太陽電池セル |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0465120A (ja) * | 1990-07-05 | 1992-03-02 | Canon Inc | 堆積膜の形成方法 |
JP2005101427A (ja) * | 2003-09-26 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2006237452A (ja) * | 2005-02-28 | 2006-09-07 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2010080888A (ja) * | 2008-09-29 | 2010-04-08 | Sanyo Electric Co Ltd | 太陽電池の製造方法及び太陽電池 |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2846651B2 (ja) * | 1989-03-31 | 1999-01-13 | 三洋電機株式会社 | 光起電力装置 |
JP3073327B2 (ja) * | 1992-06-30 | 2000-08-07 | キヤノン株式会社 | 堆積膜形成方法 |
US7999175B2 (en) * | 2008-09-09 | 2011-08-16 | Palo Alto Research Center Incorporated | Interdigitated back contact silicon solar cells with laser ablated grooves |
JP5518347B2 (ja) * | 2009-02-26 | 2014-06-11 | 三洋電機株式会社 | 太陽電池の製造方法 |
-
2012
- 2012-03-09 JP JP2013507336A patent/JPWO2012132834A1/ja active Pending
- 2012-03-09 WO PCT/JP2012/056095 patent/WO2012132834A1/ja active Application Filing
-
2013
- 2013-09-24 US US14/034,711 patent/US20140020741A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0465120A (ja) * | 1990-07-05 | 1992-03-02 | Canon Inc | 堆積膜の形成方法 |
JP2005101427A (ja) * | 2003-09-26 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2006237452A (ja) * | 2005-02-28 | 2006-09-07 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2010080888A (ja) * | 2008-09-29 | 2010-04-08 | Sanyo Electric Co Ltd | 太陽電池の製造方法及び太陽電池 |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
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US20140020741A1 (en) | 2014-01-23 |
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