JP5485060B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 251
- 238000005530 etching Methods 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 35
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 239000000243 solution Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000002378 acidificating effect Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 283
- 239000007789 gas Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000010248 power generation Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- Photovoltaic Devices (AREA)
Description
(太陽電池1の構成)
まず、本実施形態において製造される太陽電池1の構成について、図1及び図2を参照しながら詳細に説明する。
図13は、第2の実施形態における太陽電池の略図的断面図である。
10…半導体基板
10a…受光面
10b…裏面
11…光
12…IN積層体
12i…i型非晶質半導体層
12n…n型非晶質半導体層
13…IP積層体
13i…i型非晶質半導体層
13p…p型非晶質半導体層
14…n側電極
15…p側電極
16…絶縁層
17i…i型非晶質半導体層
17n…n型非晶質半導体層
18…絶縁層
19a…第1の導電層
19b…第2の導電層
19c…第3の導電層
19d…第4の導電層
21…i型非晶質半導体層
22…n型非晶質半導体層
23…絶縁層
24…i型非晶質半導体層
25…p型非晶質半導体層
26,27…導電層
30…n型の結晶性半導体基板
30b…裏面
31n…n+型の熱拡散領域
Claims (10)
- 第1及び第2の主面を有し、前記第1の主面の一部分に第1の導電型を有する第1の半導体層が形成されており、さらに前記第1の半導体層を覆うように絶縁層が形成されている半導体基板を用意する工程と、
第2の導電型を有する第2の半導体層を、前記絶縁層の表面を含んで前記第1の主面を覆うように形成する工程と、
前記第2の半導体層に対するエッチング速度が前記絶縁層に対するエッチング速度よりも大きな第1のエッチング剤を用いて、前記第2の半導体層の前記絶縁層の上に位置している部分の一部分をエッチングすることにより除去する工程と、
前記エッチングにより一部分が除去された第2の半導体層の上から、前記絶縁層に対するエッチング速度が前記第2の半導体層に対するエッチング速度よりも大きな第2のエッチング剤を用いて、前記絶縁層の一部分をエッチングにより除去することにより前記第1の半導体層を露出させる工程と、
前記第1の半導体層と前記第2の半導体層とのそれぞれの上に電極を形成する電極形成工程と、
を備え、
前記第1及び第2の半導体層のそれぞれを非晶質半導体層により形成し、前記絶縁層を、窒化ケイ素、酸化ケイ素または酸窒化ケイ素により形成する、太陽電池の製造方法。 - 前記半導体基板として、前記第1の導電型の半導体基板を用いる、請求項1に記載の太陽電池の製造方法。
- 前記半導体基板として結晶性半導体基板を用いる、請求項1または2に記載の太陽電池の製造方法。
- 前記第2の半導体層と前記絶縁層との間に真性な非晶質半導体層がさらに設けられており、前記第1のエッチング液を用いて、前記真性な非晶質半導体層の前記絶縁層の上に位置している部分の一部をエッチングすることにより除去する、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。
- 前記半導体基板の前記第1の主面の実質的に全体が、前記第1の半導体層及び前記第2の半導体層により覆われるように前記第2の半導体層を形成する、請求項1〜4のいずれか一項に記載の太陽電池の製造方法。
- 前記第1及び第2の半導体層のそれぞれをアモルファスシリコンにより形成する、請求項1〜5のいずれか一項に記載の太陽電池の製造方法。
- 前記絶縁層は、水素を含む、請求項6に記載の太陽電池の製造方法。
- 前記第1のエッチング剤としてアルカリ性のエッチング液を用い、前記第2のエッチング剤として酸性のエッチング液を用いる、請求項6または7に記載の太陽電池の製造方法。
- 前記第1のエッチング剤としてNaOH水溶液及びKOH水溶液のうちの少なくとも一方を用い、前記第2のエッチング剤としてHF水溶液を用いる、請求項8に記載の太陽電池の製造方法。
- 前記電極形成工程は、
前記第1の半導体層及び第2の半導体層並びに前記絶縁層の上に第1の導電層を形成する工程と、
前記第1の導電層の前記絶縁層の上に位置している部分を分断することにより、前記第1の導電層の前記第1の半導体層の上に形成されている部分と、前記第1の導電層の前記第2の半導体層の上に形成されている部分とを絶縁する工程と、
前記第1の導電層の前記第1の半導体層の上に形成されている部分と、前記第1の導電層の前記第2の半導体層の上に形成されている部分との上のそれぞれに、第2の導電層を形成することにより前記第1の半導体層に電気的に接続されている第1の電極と、前記第2の半導体層に電気的に接続されている第2の電極とを形成する工程と、
を含む、請求項1〜9のいずれか一項に記載の太陽電池の製造方法。
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JP2010168852A JP5485060B2 (ja) | 2010-07-28 | 2010-07-28 | 太陽電池の製造方法 |
PCT/JP2011/067216 WO2012014960A1 (ja) | 2010-07-28 | 2011-07-28 | 太陽電池の製造方法 |
EP11812549.1A EP2600413A4 (en) | 2010-07-28 | 2011-07-28 | Process for production of solar cell |
US13/743,417 US9142706B2 (en) | 2010-07-28 | 2013-01-17 | Method of manufacturing solar cell |
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EP (1) | EP2600413A4 (ja) |
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WO (1) | WO2012014960A1 (ja) |
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JP5334926B2 (ja) * | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
WO2012132655A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
WO2012132838A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置の製造方法 |
WO2012132654A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法 |
FR2985608B1 (fr) * | 2012-01-05 | 2016-11-18 | Commissariat Energie Atomique | Cellule photovoltaique et procede de realisation |
JP6156748B2 (ja) * | 2012-03-08 | 2017-07-05 | パナソニックIpマネジメント株式会社 | 半導体装置の製造方法 |
JP5906459B2 (ja) * | 2012-03-30 | 2016-04-20 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
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JP6331040B2 (ja) | 2013-11-29 | 2018-05-30 | パナソニックIpマネジメント株式会社 | 太陽電池の製造方法 |
WO2015115360A1 (ja) | 2014-01-29 | 2015-08-06 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP6350858B2 (ja) * | 2014-05-26 | 2018-07-04 | パナソニックIpマネジメント株式会社 | 太陽電池の製造方法及び太陽電池 |
JP6337352B2 (ja) * | 2014-09-25 | 2018-06-06 | パナソニックIpマネジメント株式会社 | 太陽電池 |
US10854767B2 (en) | 2015-03-31 | 2020-12-01 | Kaneka Corporation | Solar cell and method for manufacturing same |
JP6516112B2 (ja) * | 2015-09-30 | 2019-05-22 | パナソニックIpマネジメント株式会社 | 太陽電池セルの製造方法 |
WO2017168910A1 (ja) * | 2016-03-28 | 2017-10-05 | パナソニックIpマネジメント株式会社 | 太陽電池セル及びその製造方法 |
CN110047965A (zh) * | 2018-01-16 | 2019-07-23 | 福建金石能源有限公司 | 一种新型的背接触异质结电池及其制作方法 |
JP7361023B2 (ja) * | 2018-05-08 | 2023-10-13 | 株式会社カネカ | 太陽電池の製造方法及びそれに用いるホルダ |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS616828A (ja) * | 1984-06-20 | 1986-01-13 | Sanyo Electric Co Ltd | 集積型光起電力装置の製造方法 |
JPS63245964A (ja) * | 1987-03-31 | 1988-10-13 | Kanegafuchi Chem Ind Co Ltd | 集積型太陽電池 |
DE3727826A1 (de) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium |
JP3378774B2 (ja) * | 1997-07-01 | 2003-02-17 | 三洋電機株式会社 | 膜パターニング方法,半導体素子の製造方法並びに薄膜太陽電池及びその製造方法 |
JP4329183B2 (ja) * | 1999-10-14 | 2009-09-09 | ソニー株式会社 | 単一セル型薄膜単結晶シリコン太陽電池の製造方法、バックコンタクト型薄膜単結晶シリコン太陽電池の製造方法および集積型薄膜単結晶シリコン太陽電池の製造方法 |
JP3910004B2 (ja) * | 2000-07-10 | 2007-04-25 | 忠弘 大見 | 半導体シリコン単結晶ウエーハ |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
TWI335085B (en) * | 2007-04-19 | 2010-12-21 | Ind Tech Res Inst | Bifacial thin film solar cell and method for fabricating the same |
JP4947654B2 (ja) * | 2007-09-28 | 2012-06-06 | シャープ株式会社 | 誘電体膜のパターニング方法 |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
JP5347409B2 (ja) | 2008-09-29 | 2013-11-20 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
KR101002282B1 (ko) * | 2008-12-15 | 2010-12-20 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
TW201025588A (en) * | 2008-12-30 | 2010-07-01 | Ind Tech Res Inst | Phase-change memory devices and methods for fabricating the same |
CN102369601B (zh) | 2009-03-30 | 2015-04-29 | 三洋电机株式会社 | 太阳能电池 |
EP2530729B1 (en) | 2010-01-26 | 2019-10-16 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell and method for producing same |
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