JP5820987B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
- Publication number
- JP5820987B2 JP5820987B2 JP2013507249A JP2013507249A JP5820987B2 JP 5820987 B2 JP5820987 B2 JP 5820987B2 JP 2013507249 A JP2013507249 A JP 2013507249A JP 2013507249 A JP2013507249 A JP 2013507249A JP 5820987 B2 JP5820987 B2 JP 5820987B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- side electrode
- solar cell
- relatively thin
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000010408 film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 17
- 239000000969 carrier Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
(太陽電池1の構成)
図1は、第1の実施形態に係る太陽電池1の略図的平面図である。図2は、図1の線II−IIにおける略図的断面図である。
次に、図3〜図8を主として参照しながら、本実施形態の太陽電池1の製造工程の一例について説明する。具体的には、図3は、本実施形態の太陽電池の製造工程を表すフローチャートである。図4は、ステップS1,S2を説明するための略図的断面図である。図5は、ステップS3を説明するための略図的断面図である。図6は、ステップS4を説明するための略図的断面図である。図7は、ステップS5を説明するための略図的断面図である。図8は、ステップS6を説明するための略図的断面図である。
図9は、第2の実施形態に係る太陽電池の略図的断面図である。図10は、第3の実施形態に係る太陽電池の略図的断面図である。
図11は、第4の実施形態に係る太陽電池の略図的断面図である。図12は、第5の実施形態に係る太陽電池の略図的断面図である。
図13は、第6の実施形態に係る太陽電池の略図的平面図である。
図14は、第7の実施形態に係る太陽電池の略図的断面図である。図15は、第8の実施形態に係る太陽電池の略図的断面図である。
図16は、第9の実施形態に係る太陽電池の略図的断面図である。
図17は、第10の実施形態に係る太陽電池の略図的平面図である。
10…半導体基板
10a…第2の主面
10b…第1の主面
12n…n型半導体層
12n1…相対的に厚い部分
12n2…相対的に薄い部分
13p…p型半導体層
13p1…相対的に厚い部分
13p2…相対的に薄い部分
14…n側電極
15…p側電極
14a、15a…フィンガー部
14b、15b…バスバー部
18…絶縁層
20…光電変換部
20a…裏面
20an…n型表面
20ap…p型表面
20b…受光面
Claims (8)
- n型表面とp型表面とを含む第1の主面と、第2の主面とを有する光電変換部と、
前記n型表面に電気的に接続されたn側電極と、
前記p型表面に電気的に接続されたp側電極と、
を備え、
前記光電変換部は、
第1及び第2の主面を有する半導体基板と、
前記第1の主面の一部分の上に配されており、前記n型表面及び前記p型表面のうちの一方を構成している半導体層と、
前記半導体層の一部が露出するように、前記半導体層の前記一部を除く他の部分の上に設けられている絶縁層と、
を有し、
前記半導体層は、相対的に厚い部分と、相対的に薄い部分とを含み、前記半導体層の相対的に薄い部分は、前記絶縁層から露出している部分に位置しており、
前記半導体層のうちの少なくとも前記相対的に薄い部分の上に前記n側電極及びp側電極のうちの一方が配されている、太陽電池。 - 前記半導体層は、水素を含む、請求項1に記載の太陽電池。
- 前記n側電極と前記p側電極とのそれぞれは、第1の方向に沿って延び、前記第1の方向に垂直な第2の方向に沿って間隔をおいて配置されている複数のフィンガー部を含み、
前記半導体層の相対的に薄い部分は、前記フィンガー部の下方に設けられている、請求項1または2に記載の太陽電池。 - 前記n側電極と前記p側電極とのそれぞれは、前記複数のフィンガー部が電気的に接続されている集電部をさらに含み、
前記半導体層の相対的に薄い部分は、前記n側電極の集電部の下方には設けられていない、請求項3に記載の太陽電池。 - 前記光電変換部は、前記第1の主面の前記半導体層が設けられていない部分の上に配さ
れており、前記n型表面及び前記p型表面のうちの他方を構成しているさらなる半導体層をさらに有する、請求項1〜4のいずれか一項に記載の太陽電池。 - 前記第1の主面の実質的に全体が前記半導体層と前記さらなる半導体層とにより覆われている、請求項5に記載の太陽電池。
- 前記さらなる半導体層は、相対的に厚い部分と、相対的に薄い部分とを含み、
前記さらなる半導体層のうちの少なくとも前記相対的に薄い部分の上に前記n側電極及びp側電極のうちの他方が配されている、請求項5または6に記載の太陽電池。 - 前記さらなる半導体層は、水素を含む、請求項5〜7のいずれか一項に記載の太陽電池。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013507249A JP5820987B2 (ja) | 2011-03-25 | 2012-02-15 | 太陽電池 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011067007 | 2011-03-25 | ||
JP2011067007 | 2011-03-25 | ||
PCT/JP2012/053496 WO2012132595A1 (ja) | 2011-03-25 | 2012-02-15 | 太陽電池 |
JP2013507249A JP5820987B2 (ja) | 2011-03-25 | 2012-02-15 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012132595A1 JPWO2012132595A1 (ja) | 2014-07-24 |
JP5820987B2 true JP5820987B2 (ja) | 2015-11-24 |
Family
ID=46930358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013507249A Expired - Fee Related JP5820987B2 (ja) | 2011-03-25 | 2012-02-15 | 太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9627557B2 (ja) |
EP (1) | EP2690669A4 (ja) |
JP (1) | JP5820987B2 (ja) |
WO (1) | WO2012132595A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013191657A (ja) * | 2012-03-13 | 2013-09-26 | Sharp Corp | 光電変換素子およびその製造方法 |
WO2017150671A1 (ja) * | 2016-03-04 | 2017-09-08 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
US11502213B2 (en) * | 2016-12-30 | 2022-11-15 | Sunpower Corporation | Solar cell having a plurality of sub-cells coupled by cell level interconnection |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124483A (ja) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | 光起電力素子 |
JP2008529265A (ja) * | 2005-01-20 | 2008-07-31 | コミツサリア タ レネルジー アトミーク | へテロ接合およびインターフィンガ構造を有する半導体デバイス |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
JP2010080887A (ja) * | 2008-09-29 | 2010-04-08 | Sanyo Electric Co Ltd | 太陽電池及びその製造方法 |
WO2010104098A1 (ja) * | 2009-03-10 | 2010-09-16 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008030880A1 (de) * | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür |
JP5230222B2 (ja) * | 2008-02-21 | 2013-07-10 | 三洋電機株式会社 | 太陽電池 |
US20110041910A1 (en) * | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
-
2012
- 2012-02-15 JP JP2013507249A patent/JP5820987B2/ja not_active Expired - Fee Related
- 2012-02-15 EP EP12765835.9A patent/EP2690669A4/en not_active Withdrawn
- 2012-02-15 WO PCT/JP2012/053496 patent/WO2012132595A1/ja active Application Filing
-
2013
- 2013-09-23 US US14/033,653 patent/US9627557B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124483A (ja) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | 光起電力素子 |
JP2008529265A (ja) * | 2005-01-20 | 2008-07-31 | コミツサリア タ レネルジー アトミーク | へテロ接合およびインターフィンガ構造を有する半導体デバイス |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
JP2010080887A (ja) * | 2008-09-29 | 2010-04-08 | Sanyo Electric Co Ltd | 太陽電池及びその製造方法 |
WO2010104098A1 (ja) * | 2009-03-10 | 2010-09-16 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
WO2012132595A1 (ja) | 2012-10-04 |
US9627557B2 (en) | 2017-04-18 |
EP2690669A4 (en) | 2014-08-20 |
US20140020754A1 (en) | 2014-01-23 |
EP2690669A1 (en) | 2014-01-29 |
JPWO2012132595A1 (ja) | 2014-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5879515B2 (ja) | 太陽電池の製造方法 | |
JP5485060B2 (ja) | 太陽電池の製造方法 | |
JP5705968B2 (ja) | 光電変換装置及びその製造方法 | |
JP5347409B2 (ja) | 太陽電池及びその製造方法 | |
JP5485062B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP6350858B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP4334455B2 (ja) | 太陽電池モジュール | |
JP5334926B2 (ja) | 太陽電池の製造方法 | |
JP5388970B2 (ja) | 太陽電池の製造方法 | |
JP2013219065A (ja) | 太陽電池及び太陽電池の製造方法 | |
JP5595850B2 (ja) | 太陽電池の製造方法 | |
JP5948685B2 (ja) | 太陽電池及びその製造方法 | |
WO2012132835A1 (ja) | 太陽電池 | |
JP5820987B2 (ja) | 太陽電池 | |
JP5974300B2 (ja) | 太陽電池及びその製造方法 | |
JP6425195B2 (ja) | 太陽電池 | |
JP2016066709A (ja) | 太陽電池 | |
WO2012132834A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
WO2012132932A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
JP6206843B2 (ja) | 太陽電池 | |
WO2012117825A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
JP2018201053A (ja) | 太陽電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141216 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20150224 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150331 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150428 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5820987 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |