JP6350858B2 - 太陽電池の製造方法及び太陽電池 - Google Patents
太陽電池の製造方法及び太陽電池 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 293
- 239000010410 layer Substances 0.000 claims description 198
- 239000011241 protective layer Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- 238000000206 photolithography Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 132
- 239000000243 solution Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
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- 230000002378 acidificating effect Effects 0.000 description 7
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- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
以下、好ましい実施形態について説明する。但し、以下の実施形態は単なる例示であり、本発明は以下の実施形態に限定されるものではない。また、各図面において、実質的に同一の機能を有する部材は同一の符号で参照する場合がある。
以下、図4〜図14を参照して、本実施形態の太陽電池1の製造方法について説明する。なお、図4〜図14を参照した太陽電池1の製造方法は、図2に示す受光面10aの上のi型非晶質半導体膜17i、n型非晶質半導体膜17n及び絶縁層16の形成工程を省略して説明する。
10…半導体基板
10a…第2の主面(受光面)
10b…第1の主面(裏面)
11…光
12…第1の半導体層
12a…中央部
12b…側面
12i…i型非晶質半導体膜
12n…n型非晶質半導体膜
13…第2の半導体層
13i…i型非晶質半導体膜
13p…p型非晶質半導体膜
14…n側電極
14A,15A…バスバー
14B,15B…フィンガー
15…p側電極
16…絶縁層
17i…i型非晶質半導体膜
17n…n型非晶質半導体膜
18…絶縁層
18b…絶縁層の側面
19…保護層
19b…側面
21…i型非晶質半導体膜
22…n型非晶質半導体膜
23…絶縁層
23b…絶縁層の側面
24…i型非晶質半導体膜
25…p型非晶質半導体膜
26…レジストパターン
27…保護層
28…レジストパターン
30a〜30d…第1〜第4の導電層
Claims (11)
- 一導電型の半導体基板の主面上に一導電型の領域と他導電型の領域が形成された太陽電池の製造方法であって、
前記半導体基板の主面上に一導電型の第1の半導体層を形成する工程と、
前記第1の半導体層上に絶縁層を形成する工程と、
前記絶縁層上に保護層を形成する工程と、
前記一導電型の領域における前記第1の半導体層、前記絶縁層及び前記保護層を残すように、前記一導電型の領域以外の領域における前記第1の半導体層、前記絶縁層及び前記保護層をエッチングして除去する工程と、
前記絶縁層の側面をエッチングして部分的に除去することにより、前記絶縁層の側面が、前記第1の半導体層の側面及び前記保護層の側面より内側に後退して位置する後退領域を形成する工程と、
前記半導体基板、前記保護層、及び前記後退領域の前記第1の半導体層の上に、他導電型の第2の半導体層を形成する工程と、
前記絶縁層上の前記保護層及び前記第2の半導体層をエッチングして除去する工程とを備える、太陽電池の製造方法。 - 前記保護層がp型非晶質シリコン層である、請求項1に記載の太陽電池の製造方法。
- 前記後退領域を形成する工程において、前記絶縁層の側面をウェットエッチングにより除去する、請求項1または2に記載の太陽電池の製造方法。
- 前記第1の半導体層、前記絶縁層及び前記保護層をエッチングする工程が、
前記保護層上にフォトリソグラフィー法によりレジストパターンを形成する工程と、
前記レジストパターンをマスクにして、前記保護層をエッチングする工程とを含む、請求項1〜3のいずれか一項に記載の太陽電池の製造方法。 - 前記保護層をエッチングした後、前記レジストパターンを剥離する工程と、
前記保護層をマスクにして、前記絶縁層及び前記第1の半導体層をエッチングする工程とをさらに含む、請求項4に記載の太陽電池の製造方法。 - 一導電型がn型であり、他導電型がp型である、請求項1〜5のいずれか一項に記載の太陽電池の製造方法。
- 前記第1の半導体層が、前記半導体基板の主面上に形成される第1の真性半導体膜と、前記第1の真性半導体膜の上に形成される一導電型の第1の半導体膜の積層構造を有し、前記第2の半導体層が、前記半導体基板、前記保護層、及び前記後退領域の前記第1の半導体層の上に形成される第2の真性半導体膜と、前記第2の真性半導体膜の上に形成される他導電型の第2の半導体膜の積層構造を有する、請求項1〜6のいずれか一項に記載の太陽電池の製造方法。
- 一導電型の半導体基板と、
前記半導体基板の主面上に形成された一導電型の第1の半導体層と、
前記第1の半導体層上に形成された絶縁層と、
前記絶縁層上に形成された保護層と、
前記半導体基板及び前記保護層の上に形成された他導電型の第2の半導体層とを備え、
前記絶縁層の側方には、前記絶縁層の側面が、前記第1の半導体層の側面及び前記保護層の側面より内側に後退して位置する後退領域が形成されており、前記後退領域の前記第1の半導体層の上に、前記第2の半導体層が形成されている、太陽電池。 - 前記保護層がp型非晶質シリコン層である、請求項8に記載の太陽電池。
- 前記一導電型がn型であり、前記他導電型がp型である、請求項8または9に記載の太陽電池。
- 前記第1の半導体層が、前記半導体基板の主面上に形成される第1の真性半導体膜と、前記第1の真性半導体膜の上に形成される一導電型の第1の半導体膜の積層構造を有し、前記第2の半導体層が、前記半導体基板、前記保護層、及び前記後退領域の前記第1の半導体層の上に形成される第2の真性半導体膜と、前記第2の真性半導体膜の上に形成される他導電型の第2の半導体膜の積層構造を有する、請求項8〜10のいずれか一項に記載の太陽電池。
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DE102015209291.7A DE102015209291A1 (de) | 2014-05-26 | 2015-05-21 | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
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WO2012132729A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
JP2013033832A (ja) | 2011-08-01 | 2013-02-14 | Sanyo Electric Co Ltd | 太陽電池モジュール |
US9054255B2 (en) * | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
CN104412394B (zh) * | 2012-06-29 | 2016-11-09 | 洛桑联邦理工学院 | 太阳能电池 |
US20140000686A1 (en) * | 2012-06-29 | 2014-01-02 | Applied Materials, Inc. | Film stack and process design for back passivated solar cells and laser opening of contact |
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2014
- 2014-05-26 JP JP2014108372A patent/JP6350858B2/ja not_active Expired - Fee Related
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2015
- 2015-05-21 DE DE102015209291.7A patent/DE102015209291A1/de not_active Withdrawn
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US20150340531A1 (en) | 2015-11-26 |
US10546969B2 (en) | 2020-01-28 |
JP2015225900A (ja) | 2015-12-14 |
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