JP6360471B2 - 光電変換素子、光電変換モジュールおよび太陽光発電システム - Google Patents
光電変換素子、光電変換モジュールおよび太陽光発電システム Download PDFInfo
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Description
図1に、本発明の光電変換素子の一例である実施の形態1のヘテロ接合型バックコンタクトセルの模式的な断面図を示す。実施の形態1のヘテロ接合型バックコンタクトセルは、n型単結晶シリコンからなる半導体1と、半導体1の裏面の全面を被覆するi型の水素化アモルファスシリコンを含有する真性層4と、真性層4の裏面の一部を被覆するn型の水素化アモルファスシリコンを含有するn型層6と、真性層4の裏面の一部を被覆するp型の水素化アモルファスシリコンを含有するp型層8と、真性層4の裏面の一部を被覆する絶縁層5とを備えている。ここで、n型層6、p型層8および絶縁層5は、互いに、半導体1の裏面の異なる領域を被覆している。
p型層8に含まれるp型不純物としては、たとえばボロンを用いることができ、p型層8のp型不純物濃度は、たとえば5×1019個/cm3程度とすることができる。
図12に、本発明の光電変換素子の他の一例である実施の形態2のヘテロ接合型バックコンタクトセルの模式的な断面図を示す。実施の形態2のヘテロ接合型バックコンタクトセルにおいては、第1電極9の端部9aがn型層6の裏面上に位置しているとともに、第2電極10の端部10aがp型層8の裏面上に位置していることを特徴としている。
図13に、本発明の光電変換素子のさらに他の一例である実施の形態3のヘテロ接合型バックコンタクトセルの模式的な断面図を示す。実施の形態3のヘテロ接合型バックコンタクトセルにおいては、p型層8の形成後にn型層6を形成していることを特徴としている。
図14に、本発明の光電変換素子のさらに他の一例である実施の形態4のヘテロ接合型バックコンタクトセルの模式的な断面図を示す。実施の形態4のヘテロ接合型バックコンタクトセルは、n型層6の端部6aがp型層8に接していることを特徴としている。
実施の形態5は、実施の形態1〜4のヘテロ接合型バックコンタクトセルを光電変換素子として用いた光電変換モジュールである。
図22に、実施の形態1〜4のヘテロ接合型バックコンタクトセルを光電変換素子として用いた本発明の光電変換モジュールの一例である実施の形態5の光電変換モジュールの構成の概略を示す。図22を参照して、実施の形態5の光電変換モジュール1000は、複数の光電変換素子1001と、カバー1002と、出力端子1013,1014とを備えている。
実施の形態6は、実施の形態1〜4のヘテロ接合型バックコンタクトセルを光電変換素子として用いた太陽光発電システムである。
太陽光発電システムは、光電変換モジュールが出力する電力を適宜変換して、商用電力系統または電気機器等に供給する装置である。
実施の形態6の太陽光発電システム2000は、たとえば以下のように動作する。
光電変換モジュールアレイ2001について説明する。
実施の形態7は、実施の形態6として説明した太陽光発電システムよりも大規模な太陽光発電システムである。実施の形態7の太陽光発電システムも、少なくとも1つの実施の形態1〜4のヘテロ接合型バックコンタクトセルを備えるものである。
図25に、本発明の大規模太陽光発電システムの一例である実施の形態7の太陽光発電システムの構成の概略を示す。図25を参照して、実施の形態7の太陽光発電システム4000は、複数のサブシステム4001と、複数のパワーコンディショナ4003と、変圧器4004とを備える。太陽光発電システム4000は、図24に示す実施の形態6の太陽光発電システム2000よりも大規模な太陽光発電システムである。
実施の形態7の太陽光発電システム4000は、たとえば以下のように動作する。
本発明は、半導体と、半導体上に設けられた水素化アモルファスシリコンを含有する真性層と、真性層の一部を被覆する第1導電型の水素化アモルファスシリコンを含有する第1導電型層と、真性層の一部を被覆する第2導電型の水素化アモルファスシリコンを含有する第2導電型層と、第1導電型層の端部領域を被覆する絶縁膜と、第1導電型層上に設けられた第1電極と、第2導電型層上に設けられた第2電極と、を備え、第2導電型層の端部は、絶縁膜上または絶縁膜上方に位置している光電変換素子である。このような構成とすることにより、第2導電型層のパターニングを絶縁膜上で行なうことができ、第2導電型層のパターニング時に、半導体および真性層および第1導電型層が受けるダメージを低減することができる。また、第1導電型層と第2導電型層とが厚さ方向に絶縁されているため、シャント電流を著しく低くすることができる。したがって、本発明の光電変換素子は、高い歩留まりで製造することができ、かつ特性の高い光電変換素子とすることができる。
Claims (8)
- 半導体と、
前記半導体上に設けられた水素化アモルファスシリコンを含有する真性層と、
前記真性層の一部を被覆する、第1導電型の水素化アモルファスシリコンを含有する第1導電型層と、
前記真性層の一部を被覆する、第2導電型の水素化アモルファスシリコンを含有する第2導電型層と、
前記第1導電型層の端部領域を被覆する絶縁膜と、
前記第1導電型層上に設けられた第1電極と、
前記第2導電型層上に設けられた第2電極と、を備え、
前記第2導電型層の端部は、前記絶縁膜上または前記絶縁膜上方に位置し、
前記真性層の一部を被覆する絶縁層をさらに備え、
前記第1導電型層の端部および前記第2導電型層の端部は、前記真性層と前記絶縁層とが接する領域の上方に位置している、光電変換素子。 - 半導体と、
前記半導体上に設けられた水素化アモルファスシリコンを含有する真性層と、
前記真性層の一部を被覆する、第1導電型の水素化アモルファスシリコンを含有する第1導電型層と、
前記真性層の一部を被覆する、第2導電型の水素化アモルファスシリコンを含有する第2導電型層と、
前記第1導電型層の端部領域を被覆する絶縁膜と、
前記第1導電型層上に設けられた第1電極と、
前記第2導電型層上に設けられた第2電極と、を備え、
前記第2導電型層の端部は、前記絶縁膜上または前記絶縁膜上方に位置し、
前記第2導電型層と接する領域における前記真性層の厚さは、前記第1導電型層と接する領域における前記真性層の厚さよりも厚い、光電変換素子。 - 前記第2導電型層と接する領域における前記真性層の厚さは、前記第1導電型層と接する領域における前記真性層の厚さよりも厚い、請求項1に記載の光電変換素子。
- 前記第1電極の端部および前記第2電極の端部が、前記絶縁膜の上方に位置している、請求項1から請求項3のいずれか1項に記載の光電変換素子。
- 前記第2導電型がp型である、請求項1から請求項4のいずれか1項に記載の光電変換素子。
- 前記第2導電型層と前記真性層との間に、第2真性層を有する、請求項1から請求項5のいずれか1項に記載の光電変換素子。
- 請求項1から請求項6のいずれか1項に記載の光電変換素子を複数備える、光電変換モジュール。
- 請求項7に記載の光電変換モジュールを複数備える、太陽光発電システム。
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