JP6156748B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6156748B2 JP6156748B2 JP2014503744A JP2014503744A JP6156748B2 JP 6156748 B2 JP6156748 B2 JP 6156748B2 JP 2014503744 A JP2014503744 A JP 2014503744A JP 2014503744 A JP2014503744 A JP 2014503744A JP 6156748 B2 JP6156748 B2 JP 6156748B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type semiconductor
- manufacturing
- main surface
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 162
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000005530 etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Description
まず、図1及び図2を参照して、本実施形態において製造される、半導体装置である太陽電池1の構成について説明する。
次に、主として図3〜図6を参照しながら、太陽電池1の製造方法の一例について説明する。
10…基板
12p…p型半導体層
13n…n型半導体層
14n…n側電極
15p…p側電極
16…反射抑制層
22p…p型半導体層
23n…n型半導体層
Claims (5)
- 半導体材料からなる基板の一主面の一部分の上に、p型半導体層を形成するp型半導体層形成工程と、
前記p型半導体層の上を含め、前記基板の一主面の上にn型半導体層を形成する工程と、
前記n型半導体層の前記p型半導体層の上に位置する部分の少なくとも一部をアルカリエッチング液を用いてエッチングして、前記p型半導体層を露出する工程と、
を備え、
前記n型半導体層を形成する工程において、前記一主面のうちの前記p型半導体層が形成された領域を除く領域における、前記一主面と前記n型半導体層の上面との間に形成された層の数と、前記一主面のうちの前記p型半導体層が形成された領域における、前記p型半導体層の上面と前記n型半導体層の上面との間に形成された層の数とが同じである、
半導体装置の製造方法。 - 前記アルカリエッチング液として、アルカリ金属水酸化物水溶液を用いる、請求項1に記載の半導体装置の製造方法。
- 前記p型半導体層の上にp側電極を形成し、前記n型半導体層の上にn側電極を形成する工程をさらに備え、
前記半導体装置が太陽電池である、請求項1または2に記載の半導体装置の製造方法。 - 前記p型半導体層形成工程は、前記基板の一主面の上に形成したp型半導体層の一部分をエッチングする工程を含む、請求項1〜3のいずれか一項に記載の半導体装置の製造方法。
- 前記p型半導体層のエッチングをフッ硝酸を用いて行う、請求項4に記載の半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012051757 | 2012-03-08 | ||
JP2012051757 | 2012-03-08 | ||
PCT/JP2013/053980 WO2013133005A1 (ja) | 2012-03-08 | 2013-02-19 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013133005A1 JPWO2013133005A1 (ja) | 2015-07-30 |
JP6156748B2 true JP6156748B2 (ja) | 2017-07-05 |
Family
ID=49116489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014503744A Expired - Fee Related JP6156748B2 (ja) | 2012-03-08 | 2013-02-19 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20140370651A1 (ja) |
JP (1) | JP6156748B2 (ja) |
WO (1) | WO2013133005A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016068051A1 (ja) | 2014-10-31 | 2016-05-06 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
WO2016098701A1 (ja) * | 2014-12-15 | 2016-06-23 | シャープ株式会社 | 半導体基板の製造方法、光電変換素子の製造方法、半導体基板および光電変換素子 |
CN107112375B (zh) * | 2015-03-31 | 2020-05-12 | 株式会社钟化 | 太阳能电池以及太阳能电池模块 |
JP6785775B2 (ja) | 2015-09-14 | 2020-11-18 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5277485B2 (ja) * | 2007-12-13 | 2013-08-28 | シャープ株式会社 | 太陽電池の製造方法 |
JP5347409B2 (ja) * | 2008-09-29 | 2013-11-20 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
KR101099480B1 (ko) * | 2009-02-13 | 2011-12-27 | 엘지전자 주식회사 | 태양전지 및 그의 제조방법과 기판 식각 방법 |
CN102369601B (zh) * | 2009-03-30 | 2015-04-29 | 三洋电机株式会社 | 太阳能电池 |
US8148230B2 (en) * | 2009-07-15 | 2012-04-03 | Sandisk 3D Llc | Method of making damascene diodes using selective etching methods |
JP5401203B2 (ja) * | 2009-08-07 | 2014-01-29 | 株式会社日立製作所 | 半導体受光装置及びその製造方法 |
JP5485060B2 (ja) * | 2010-07-28 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5334926B2 (ja) * | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
-
2013
- 2013-02-19 JP JP2014503744A patent/JP6156748B2/ja not_active Expired - Fee Related
- 2013-02-19 WO PCT/JP2013/053980 patent/WO2013133005A1/ja active Application Filing
-
2014
- 2014-09-04 US US14/476,833 patent/US20140370651A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20140370651A1 (en) | 2014-12-18 |
WO2013133005A1 (ja) | 2013-09-12 |
JPWO2013133005A1 (ja) | 2015-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5879515B2 (ja) | 太陽電池の製造方法 | |
JP5485060B2 (ja) | 太陽電池の製造方法 | |
JP5879538B2 (ja) | 光電変換装置及びその製造方法 | |
JP5334926B2 (ja) | 太陽電池の製造方法 | |
JP6350858B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP2010080887A (ja) | 太陽電池及びその製造方法 | |
JP2013219065A (ja) | 太陽電池及び太陽電池の製造方法 | |
JP6156748B2 (ja) | 半導体装置の製造方法 | |
JP5595850B2 (ja) | 太陽電池の製造方法 | |
JP5884030B2 (ja) | 光電変換装置の製造方法 | |
WO2012132835A1 (ja) | 太陽電池 | |
JP6136024B2 (ja) | 太陽電池の製造方法 | |
JP2016066709A (ja) | 太陽電池 | |
US9705027B2 (en) | Solar cell manufacturing method using etching paste | |
JP5971499B2 (ja) | 太陽電池及びその製造方法 | |
JP2013187388A (ja) | 半導体装置の製造方法 | |
JP2014053331A (ja) | 太陽電池 | |
WO2012132834A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
WO2012132614A1 (ja) | 光電変換装置 | |
JPWO2015145886A1 (ja) | 電極パターンの形成方法及び太陽電池の製造方法 | |
JP6906195B2 (ja) | 太陽電池 | |
WO2012132932A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
JP2015185658A (ja) | 太陽電池の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161202 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20161227 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170327 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170404 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170509 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170525 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6156748 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |