JP5845445B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
- Publication number
- JP5845445B2 JP5845445B2 JP2011551872A JP2011551872A JP5845445B2 JP 5845445 B2 JP5845445 B2 JP 5845445B2 JP 2011551872 A JP2011551872 A JP 2011551872A JP 2011551872 A JP2011551872 A JP 2011551872A JP 5845445 B2 JP5845445 B2 JP 5845445B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- solar cell
- back surface
- amorphous semiconductor
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 17
- 239000004065 semiconductor Substances 0.000 claims description 322
- 239000000758 substrate Substances 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 279
- 238000000034 method Methods 0.000 description 19
- 238000000926 separation method Methods 0.000 description 17
- 239000000969 carrier Substances 0.000 description 16
- 239000010953 base metal Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 239000002585 base Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
本発明の実施形態に係る太陽電池1Aの概略構成について、図2及び図3を参照しながら説明する。図2は、本発明の実施形態に係る太陽電池1Aの裏面12側から視た平面図である。図3は、図2のA−A’線における断面図である。
本発明の実施形態に係る太陽電池1Bの概略構成について、図4を参照しながら説明する。以下において、太陽電池1Aと同一部分については、説明を省略する。すなわち、太陽電池1Aとの相違点を主に説明する。図4は、本発明の実施形態に係る太陽電池1Bの配列方向x及び長手方向yに垂直な垂直方向zと配列方向xとに沿った断面図である。
(3)太陽電池1Cの概略構成
本発明の実施形態に係る太陽電池1Cの概略構成について、図5を参照しながら説明する。以下において、太陽電池1Aと同一部分については、説明を省略する。すなわち、太陽電池1Aとの相違点を主に説明する。図5は、本発明の実施形態に係る太陽電池1Cの配列方向x及び長手方向yに垂直な垂直方向zと配列方向xとに沿った断面図である。
本発明の実施形態に係る太陽電池1Aの製造方法について、図6から図13を参照しながら説明する。図6は、本発明の実施形態に係る太陽電池1Aの製造方法を説明するためのフローチャートである。図7から図13は、本発明の実施形態に係る太陽電池1Aの製造方法を説明するための図である。
本発明の効果を確かめるために、電流密度について、計算モデルによって、評価した。具体的には、正孔80がp型の第2半導体層30pへと移動するときの電流密度を計算した。計算モデルの条件は、以下の通りである。
本発明の実施形態に係る太陽電池では、太陽電池1では、配列方向xにおける溝13の側面17と溝13の底面19とに、第2半導体層30pは形成される。これによって、半導体基板10n内における第1半導体層20n付近で形成されたキャリアにおいて、裏面12上の第2半導体層30pの端部よりも、側面17及び底面19に形成された第2半導体層30pの方が距離的に近いキャリアが現れる。このため、裏面12上の第2半導体層30nの端部へとキャリアが集中して移動するのではなく、側面17及び底面19に形成された第2半導体層30pの方へもキャリアが分散して移動する。従って、電流密度が減
少するものと考えられる。このため、経年劣化を抑制できる。
Claims (7)
- 受光面と裏面とを有し結晶系半導体材料を含む半導体基板と、第1導電型を有する第1非晶質半導体層と、第2導電型を有する第2非晶質半導体層とを備え、
前記第1非晶質半導体層及び前記第2非晶質半導体層は、前記裏面上に形成される太陽電池であって、
前記裏面には、溝が形成されており、
前記溝が形成されていない前記裏面には、前記第1非晶質半導体層が形成され、
前記第1非晶質半導体層と前記第2非晶質半導体層とが交互に配列された配列方向における前記溝の側面と前記溝の底面とには、前記第2非晶質半導体層が形成され、前記第2非晶質半導体層と前記側面との接合及び前記第2非晶質半導体層と前記底面との接合は、ヘテロ接合であって、
前記側面は、傾きを持って前記底面とつながっている太陽電池。 - 前記側面と前記底面とは、円弧状につながっている請求項1に記載の太陽電池。
- 前記半導体基板は、第1導電型である請求項1から2の何れか1項に記載の太陽電池。
- 前記裏面上に形成された前記第2非晶質半導体層の前記配列方向における幅は、前記裏面上に形成された前記第1非晶質半導体層の前記配列方向における幅よりも長い請求項3に記載の太陽電池。
- 前記半導体基板は、第2導電型であり、
前記裏面上に形成された前記第2非晶質半導体層の前記配列方向における幅は、前記裏面上に形成された前記第1非晶質半導体層の前記配列方向における幅よりも短い請求項1から2の何れか1項に記載の太陽電池。 - 裏面上において、前記第1非晶質半導体層と前記第2非晶質半導体層とが接している請求項1から5の何れか1項に記載の太陽電池。
- 前記溝が形成されていない前記裏面と前記溝との境界上において、前記第1非晶質半導
体層と前記第2非晶質半導体層とが接している請求項1から6の何れか1項に記載の太陽電池。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011551872A JP5845445B2 (ja) | 2010-01-26 | 2011-01-26 | 太陽電池及びその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010014597 | 2010-01-26 | ||
JP2010014597 | 2010-01-26 | ||
JP2011551872A JP5845445B2 (ja) | 2010-01-26 | 2011-01-26 | 太陽電池及びその製造方法 |
PCT/JP2011/051479 WO2011093329A1 (ja) | 2010-01-26 | 2011-01-26 | 太陽電池及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011093329A1 JPWO2011093329A1 (ja) | 2013-06-06 |
JP5845445B2 true JP5845445B2 (ja) | 2016-01-20 |
Family
ID=44319315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011551872A Expired - Fee Related JP5845445B2 (ja) | 2010-01-26 | 2011-01-26 | 太陽電池及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10181540B2 (ja) |
EP (1) | EP2530729B1 (ja) |
JP (1) | JP5845445B2 (ja) |
CN (1) | CN102725858B (ja) |
WO (1) | WO2011093329A1 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5485060B2 (ja) * | 2010-07-28 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5334926B2 (ja) * | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5705968B2 (ja) * | 2011-03-25 | 2015-04-22 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
JPWO2012132835A1 (ja) * | 2011-03-25 | 2014-07-28 | 三洋電機株式会社 | 太陽電池 |
KR101826912B1 (ko) | 2011-11-07 | 2018-02-08 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광전변환소자 및 그 제조 방법 |
KR101878397B1 (ko) * | 2011-11-18 | 2018-07-16 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양전지 및 그 제조 방법 |
US20130146136A1 (en) * | 2011-12-13 | 2013-06-13 | Kyoung-Jin Seo | Photovoltaic device and method of manufacturing the same |
FR2985608B1 (fr) * | 2012-01-05 | 2016-11-18 | Commissariat Energie Atomique | Cellule photovoltaique et procede de realisation |
JP5777795B2 (ja) * | 2012-02-24 | 2015-09-09 | 三菱電機株式会社 | 光起電力素子 |
KR101948206B1 (ko) * | 2012-03-02 | 2019-02-14 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양 전지와, 이의 제조 방법 |
JP6032911B2 (ja) * | 2012-03-23 | 2016-11-30 | シャープ株式会社 | 光電変換素子およびその製造方法 |
KR101918738B1 (ko) | 2012-04-17 | 2018-11-15 | 엘지전자 주식회사 | 태양 전지 |
JP6071293B2 (ja) * | 2012-07-18 | 2017-02-01 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
JP2014056875A (ja) * | 2012-09-11 | 2014-03-27 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
KR101777881B1 (ko) | 2012-09-18 | 2017-09-12 | 현대중공업그린에너지 주식회사 | 후면전극형 태양전지 제조 방법 |
JP2014067804A (ja) * | 2012-09-25 | 2014-04-17 | Sharp Corp | 光電変換素子 |
CN102856328B (zh) * | 2012-10-10 | 2015-06-10 | 友达光电股份有限公司 | 太阳能电池及其制作方法 |
JP2014078618A (ja) * | 2012-10-11 | 2014-05-01 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
WO2014068965A1 (ja) * | 2012-10-31 | 2014-05-08 | 三洋電機株式会社 | 太陽電池 |
WO2014136715A1 (ja) * | 2013-03-04 | 2014-09-12 | シャープ株式会社 | 光電変換素子 |
NL2010496C2 (en) * | 2013-03-21 | 2014-09-24 | Stichting Energie | Solar cell and method for manufacturing such a solar cell. |
CN104995747B (zh) * | 2013-03-28 | 2016-12-14 | 夏普株式会社 | 光电转换元件 |
WO2015040780A1 (ja) * | 2013-09-19 | 2015-03-26 | パナソニックIpマネジメント株式会社 | 太陽電池および太陽電池モジュール |
TWI462320B (zh) * | 2013-11-11 | 2014-11-21 | Neo Solar Power Corp | 背接觸式太陽能電池 |
JP6331040B2 (ja) * | 2013-11-29 | 2018-05-30 | パナソニックIpマネジメント株式会社 | 太陽電池の製造方法 |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
WO2015114903A1 (ja) * | 2014-01-28 | 2015-08-06 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
JP6418558B2 (ja) * | 2014-02-06 | 2018-11-07 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP2015191962A (ja) * | 2014-03-27 | 2015-11-02 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
US11355657B2 (en) * | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
US9525083B2 (en) * | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
WO2016158226A1 (ja) * | 2015-03-31 | 2016-10-06 | 株式会社カネカ | 太陽電池及びその製造方法 |
WO2017038733A1 (ja) * | 2015-08-31 | 2017-03-09 | シャープ株式会社 | 光電変換素子 |
US9502601B1 (en) * | 2016-04-01 | 2016-11-22 | Sunpower Corporation | Metallization of solar cells with differentiated P-type and N-type region architectures |
CN111095573A (zh) | 2017-09-13 | 2020-05-01 | 株式会社钟化 | 太阳能电池、太阳能电池的制造方法以及太阳能电池模块 |
WO2019111491A1 (ja) * | 2017-12-04 | 2019-06-13 | 株式会社カネカ | 太陽電池およびその太陽電池を備えた電子機器 |
JP7278831B2 (ja) * | 2019-03-27 | 2023-05-22 | パナソニックホールディングス株式会社 | 太陽電池セルの製造方法および割断用太陽電池セル |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005510885A (ja) * | 2001-11-26 | 2005-04-21 | シェル・ゾラール・ゲーエムベーハー | 背面接点を有する太陽電池の製造 |
JP2007059644A (ja) * | 2005-08-25 | 2007-03-08 | Toyota Motor Corp | 光起電力素子 |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
JP2003124483A (ja) * | 2001-10-17 | 2003-04-25 | Toyota Motor Corp | 光起電力素子 |
US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
CN100431177C (zh) * | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | 光生伏打元件及其制造方法 |
JP4155899B2 (ja) * | 2003-09-24 | 2008-09-24 | 三洋電機株式会社 | 光起電力素子の製造方法 |
JP3998619B2 (ja) * | 2003-09-24 | 2007-10-31 | 三洋電機株式会社 | 光起電力素子およびその製造方法 |
DE102004050269A1 (de) | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
US20070169808A1 (en) | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US9070804B2 (en) * | 2009-02-24 | 2015-06-30 | Sunpower Corporation | Back contact sliver cells |
KR101146737B1 (ko) * | 2009-06-29 | 2012-05-18 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US20110073175A1 (en) * | 2009-09-29 | 2011-03-31 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having emitter formed at light-facing and back surfaces |
CN102576764A (zh) * | 2009-10-15 | 2012-07-11 | Lg伊诺特有限公司 | 太阳能电池设备及其制造方法 |
-
2011
- 2011-01-26 JP JP2011551872A patent/JP5845445B2/ja not_active Expired - Fee Related
- 2011-01-26 CN CN201180007219.9A patent/CN102725858B/zh not_active Expired - Fee Related
- 2011-01-26 EP EP11737042.9A patent/EP2530729B1/en active Active
- 2011-01-26 WO PCT/JP2011/051479 patent/WO2011093329A1/ja active Application Filing
-
2012
- 2012-07-25 US US13/557,255 patent/US10181540B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005510885A (ja) * | 2001-11-26 | 2005-04-21 | シェル・ゾラール・ゲーエムベーハー | 背面接点を有する太陽電池の製造 |
JP2007059644A (ja) * | 2005-08-25 | 2007-03-08 | Toyota Motor Corp | 光起電力素子 |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130186456A1 (en) | 2013-07-25 |
WO2011093329A1 (ja) | 2011-08-04 |
US10181540B2 (en) | 2019-01-15 |
CN102725858B (zh) | 2015-12-09 |
CN102725858A (zh) | 2012-10-10 |
EP2530729A1 (en) | 2012-12-05 |
JPWO2011093329A1 (ja) | 2013-06-06 |
EP2530729B1 (en) | 2019-10-16 |
EP2530729A4 (en) | 2014-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5845445B2 (ja) | 太陽電池及びその製造方法 | |
JP5906393B2 (ja) | 太陽電池及び太陽電池の製造方法 | |
US10680122B2 (en) | Solar cell and method for manufacturing the same | |
JP5347409B2 (ja) | 太陽電池及びその製造方法 | |
JP5461028B2 (ja) | 太陽電池 | |
JP5538360B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP2016111357A5 (ja) | ||
TWI424582B (zh) | 太陽能電池的製造方法 | |
US20130284259A1 (en) | Solar cells and manufacturing method thereof | |
JP2013131586A (ja) | 裏面電極型太陽電池の製造方法 | |
JP2010283406A (ja) | 太陽電池 | |
US8889981B2 (en) | Photoelectric device | |
JP6311968B2 (ja) | 太陽電池 | |
KR101661364B1 (ko) | 태양 전지의 제조 방법 | |
WO2012132834A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
JP6447927B2 (ja) | 太陽電池 | |
WO2017038733A1 (ja) | 光電変換素子 | |
JP6583753B2 (ja) | 太陽電池 | |
WO2012132932A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
JP6425143B2 (ja) | 太陽電池及びその製造方法 | |
JP5816800B2 (ja) | 太陽電池の製造方法 | |
JP2015177176A (ja) | ヘテロ接合型バックコンタクトセルおよびヘテロ接合型バックコンタクトセルの製造方法 | |
KR20120025732A (ko) | 태양 전지의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20130628 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131220 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20140106 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20140314 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141113 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20150224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150416 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150609 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150622 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5845445 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |