TWI424582B - 太陽能電池的製造方法 - Google Patents

太陽能電池的製造方法 Download PDF

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TWI424582B
TWI424582B TW100113232A TW100113232A TWI424582B TW I424582 B TWI424582 B TW I424582B TW 100113232 A TW100113232 A TW 100113232A TW 100113232 A TW100113232 A TW 100113232A TW I424582 B TWI424582 B TW I424582B
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Ming Hui Chiu
Shih Hsien Yang
Yen Cheng Hu
yu chun Chen
Tsung Pao Chen
Kuan Chen Wang
Jen Chieh Chen
Zhen Cheng Wu
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Au Optronics Corp
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Description

太陽能電池的製造方法
本發明是有關於一種太陽能電池的製造方法，且特別是有關於一種具有良好效率的太陽能電池的製造方法。
矽基太陽能電池為業界常見的一種太陽能電池。矽基太陽能電池的原理是將高純度的半導體材料(矽)加入摻質使其呈現不同的性質，以形成p型半導體及n型半導體，並將pn兩型半導體相接合，如此即可形成一p-n接面。當太陽光照射到一個p-n結構的半導體時，光子所提供的能量可能會把半導體中的電子激發出來產生電子-電洞對。藉由分別於p型半導體及n型半導體上設置電極，使電洞往電場的方向移動並使電子則往相反的方向移動，如此即可構成太陽能電池。
一般來說，為了提供半導體層與電極之間具有更良好的接觸特性，會在淡摻雜半導體層中形成重摻雜選擇性射極。如此一來，可以進一步降低電池的串聯電阻並使電池具有更高效率。然而，由於重摻雜選擇性射極與淡摻雜半導體層通常是藉由摻雜同一種摻質所形成的，因而兩者之間的差異性不明顯，導致太陽能電池的效率難以藉此進一步提升。
本發明提供一種太陽能電池的製造方法，使得太陽能電池具有較佳的效率。
本發明提出一種太陽能電池的製造方法。提供一第一型基底，其具有一第一表面與一第二表面。使用一第一摻質對第一型基底的第一表面進行一第一摻雜製程，以形成一第二型淡摻雜層。使用一第二摻質對部分第二型淡摻雜層進行一第二摻雜製程，以形成一第二型重摻雜區，其中第二摻質的原子量大於第一摻質的原子量，第一摻雜製程的溫度高於第二摻雜製程的溫度。於第二型重摻雜區上形成一第一電極。於第一型基底的第二表面上形成一第二電極。
基於上述，在本發明之太陽能電池的製造方法中，使用第一摻質形成淡摻雜層，以及使用第二摻質於淡摻雜層中形成重摻雜區，其中第二摻質的原子量大於第一摻質的原子量且第二摻質的摻雜溫度低於第一摻質的摻雜溫度。如此一來，能於淡摻雜層中清楚地定義深度較淺的重摻雜區，使得作為選擇性射極的重摻雜區能對電極提供良好的歐姆接觸，進而有效地提升太陽能電池中的再結合效率，使得太陽能電池具有較佳的效率。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1A至圖1F為本發明之一實施例的太陽能電池的製 造方法的流程示意圖。請參照圖1A，首先，提供一第一型基底102，其具有一第一表面102a與一第二表面102b。在本實施例中，第一型例如是p型，第二型例如是n型，反之，在另一實施例中，第一型與第二型也可以分別是n型與p型。在本實施例中，第一型基底102例如是摻雜有p型摻質之半導體材料。所述p型摻質可以是選自元素週期表中三族元素的群組，例如是硼(B)、鋁(Al)、鎵(Ga)、銦(In)等等。另外，基底102之材料可為矽、硫化鎘(CdS)、銅銦鎵二硒(CuInGaSe2 ,CIGS)、銅銦二硒(CuInSe2 ,CIS)、碲化鎘(CdTe)、半導體有機材料(organic material)或上述材料堆疊之多層結構。上述之矽包括單晶矽(single crystal silicon)、多晶矽(polycrystal silicon)、非晶矽(amorphous silicon)或是微晶矽(microcrystal silicon)。在本實施例中，第一表面102a例如是上表面，以及第二表面102b例如是下表面。在本實施例中，第一型基底102的第一表面102a例如是織化(textured)表面，以提高太陽光的吸收，如圖1A中的鋸齒狀表面所示。
請參照圖1B，接著，使用一第一摻質對第一型基底102的第一表面102a進行一第一摻雜製程DP1，以形成一第二型淡摻雜層104。在本實施例中，第一摻質例如是n型摻質，所述n型摻質可以是選自元素週期表中的第五族元素，例如磷(P)、砷(As)或是銻(Sb)等等。第一摻雜製程DP1例如是熱擴散製程或離子植入製程。在本實施例中，第一摻雜製程DP1的溫度例如是介於800℃與1000℃之 間，且較佳為介於800℃與850℃之間。在本實施例中，第二型淡摻雜層104例如是n型淡摻雜層。第二型淡摻雜層104的厚度例如是0.2微米至0.6微米。
請同時參照圖1C與圖1D，然後，使用一第二摻質對部分第二型淡摻雜層104進行一第二摻雜製程DP2，以形成一第二型重摻雜區108，其中第二摻質的原子量大於第一摻質的原子量，第一摻雜製程DP1的溫度高於第二摻雜製程DP2的溫度。
在本實施例中，第二型重摻雜區108的形成方法包括以下步驟。首先，如圖1C所示，先於第二型淡摻雜層104上形成一罩幕層106，罩幕層106具有暴露出部分第二型淡摻雜層104的一開口106a。在本實施例中，罩幕層106的材料例如是氮化矽(Si3 N4 )、氧化矽(SiO2 )、氧化鈦(TiO2 )、氟化鎂(MgF2 )或上述之組合等具有抗反射特性的材料。罩幕層106的厚度例如是介於70奈米與90奈米之間。罩幕層106的形成方法例如是先以諸如電漿增強化學氣相沉積法(PECVD)等方法形成一整層的罩幕材料層，再將罩幕材料層圖案化成具有開口106a的罩幕層106。其中圖案化罩幕層106的方法包括蝕刻膠(etching paste)、雷射法、微影蝕刻製程或其他方法。特別一提的是，在另一實施例中，罩幕層106也可以是其他不具有抗反射特性的材料。
接著，如圖1D所示，以罩幕層106為罩幕，經由開口106a使用第二摻質對部分第二型淡摻雜層104進行第二摻雜製程DP2，以形成第二型重摻雜區108。在本實施例 中，第二摻質例如是n型摻質，所述n型摻質可以是選自元素週期表中的第五族元素，例如磷(P)、砷(As)或是銻(Sb)等等。特別注意的是，第二摻質的原子量大於第一摻質的原子量，舉例來說，第一摻質例如是磷，第二摻質例如是砷或銻；或者是第一摻質例如是砷，第二摻質例如是銻，依此類推。在本實施例中，第二摻雜製程DP2例如是熱擴散製程或離子植入製程。第二摻雜製程DP2的溫度例如是介於700℃與900℃之間。在本實施例中，第一摻雜製程DP1的溫度例如是介於800℃與850℃之間，且較佳為850℃，以及第二摻雜製程DP2的溫度例如是介於800℃與850℃之間，且較佳為介於823℃與825℃之間，其中第一摻雜製程DP1的溫度高於第二摻雜製程DP2的溫度。在本實施例中，第二型重摻雜區108例如是n型重摻雜區，第二型重摻雜區108的厚度例如是0.1微米至0.15微米。在本實施例中，第二型重摻雜區108實質上為作為重摻雜選擇性射極的淺摻雜區。
請參照圖1E，接著，於第二型重摻雜區108上形成一第一電極110。第一電極110的材料例如是包括銀、鈦鈀銀或其他合適的導電材料。第一電極110的形成方法可以是電鍍法(plating)、印刷法(printing)、濺鍍法(sputtering)、金屬有機化學氣相沈積法(metal organic chemical vapor deposition,MOCVD)或蒸鍍法(evaporation)，本發明並不加以限定。特別一提的是，在本實施例中，由於罩幕層106可作為抗反射層而保留於第一型基板102上，因此第一電 極110可以直接以印刷法等方法形成於開口106a中，而不需經圖案化製程。另一方面，若罩幕層106的材料為不具有抗反射特性的材料，則在形成第一電極110之前須先移除罩幕層106並額外於第一型基底102上形成一抗反射層，再於抗反射層上形成第一電極110，此時則適於以蝕刻膠的方式來形成第一電極110並使其形成於對應於第二型重摻雜區108的位置處。
請參照圖1F，然後，於第一型基底102的第二表面102b上形成一第二電極120。第二電極120的材料例如是包括鋁或其他合適的導電材料。第二電極120的形成方法可以參照第一電極110的形成方法，於此不贅述。值得注意的是，在本實施例中，為了防止在接近第一型基底102背面的載流子再複合產生的效果，可在第一型基底102與第二電極120之間設置後表面場層(Back surface Field,BSF)122。後表面場層122的形成方法例如是進行共燒結製程(co-firing process)。在本實施例中，在進行形成第二電極120的步驟後，太陽能電池100的製作大致完成。
特別一提的是，在本實施例中是以具有抗反射特性材料作為罩幕層106為例，因此罩幕層106能保留在太陽能電池100中以作為抗反射層。然而，在另一實施例中(未繪示)，在形成第二型重摻雜區108之後，可以移除罩幕層106，並額外形成一整層的抗反射層，再分別於第二型重摻雜區108與第一型基底102的第二表面102b上形成第一電極110與第二電極120。換言之，使用者可以根據需求選 擇罩幕層的材料及選擇性地形成抗反射層，或者是使用其他方法來形成第二型重摻雜區108。
在本實施例中，是使用不同摻質來形成淡摻雜層與重摻雜區，其中先使用原子量較小的第一摻質來進行第一摻雜製程以形成淡摻雜層，再使用原子量較大的第二摻質來進行第二摻雜製程以於淡摻雜層中形成重摻雜區。其中，由於第二摻質的原子量大於第一摻質，且第二摻雜製程的溫度低於第一摻雜製程的溫度，因而第二摻質能準確地進行淺摻雜以形成摻雜深度較小的重摻雜區。如此一來，能於淡摻雜層中清楚地定義深度較淺的重摻雜區，使得作為選擇性射極的重摻雜區能對電極提供良好的歐姆接觸，進而有效地提升太陽能電池中的再結合效率，使得太陽能電池具有較佳的效率。特別一提的是，在本實施例中，是以具有抗反射特性的材料作為用以形成重摻雜區的罩幕層，因此罩幕層在形成重摻雜區之後能保留下來作為太陽能電池的抗反射層，而無需額外進行移除步驟，如此一來能簡化太陽能電池的製程且增加太陽能電池的效率。
綜上所述，在本發明之太陽能電池的製造方法中，使用第一摻質形成淡摻雜層，以及使用第二摻質於淡摻雜層中形成重摻雜區，其中第二摻質的原子量大於第一摻質的原子量且第二摻質的摻雜溫度低於第一摻質的摻雜溫度。如此一來，能於淡摻雜層中清楚地定義深度較淺的重摻雜區，使得作為選擇性射極的重摻雜區能對電極提供良好的歐姆接觸，進而有效地提升太陽能電池中的再結合效率， 使得太陽能電池具有較佳的效率。再者，本發明之太陽能電池的製造方法與現有的太陽能電池製程相容，無需額外添購設備，因此不會大幅增加太陽能電池的製造成本。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧太陽能電池
102‧‧‧第一型基底
102a、102b‧‧‧表面
104‧‧‧第二型淡摻雜層
106‧‧‧罩幕層
106a‧‧‧開口
108‧‧‧第二型重摻雜區
110、120‧‧‧電極
122‧‧‧後表面場層
DP1、DP2‧‧‧摻雜製程
圖1A至圖1F為本發明之一實施例的太陽能電池的製造方法的流程示意圖。
100‧‧‧太陽能電池
102‧‧‧第一型基底
102a、102b‧‧‧表面
104‧‧‧第二型淡摻雜層
106‧‧‧罩幕層
108‧‧‧第二型重摻雜區
110、120‧‧‧電極
122‧‧‧後表面場層

Claims (17)

  1. 一種太陽能電池的製造方法，包括：提供一第一型基底，其具有一第一表面與一第二表面；使用一第一摻質對該第一型基底的該第一表面進行一第一摻雜製程，以形成一第二型淡摻雜層；在進行該第一摻雜製程後，使用一第二摻質對該第二型淡摻雜層的多個部分進行一第二摻雜製程，以形成多個第二型重摻雜區，其中該第二摻質的原子量大於該第一摻質的原子量，該第一摻雜製程的溫度高於該第二摻雜製程的溫度，其中該些第二型重摻雜區的形成方法包括：於該第二型淡摻雜層上形成一罩幕層，該罩幕層具有暴露出該第二型淡摻雜層的該些部分的多個開口；以該罩幕層為罩幕，經由該些開口對該第二型淡摻雜層進行該第二摻雜製程，以形成該些第二型重摻雜區，使得各該第二型重摻雜區的厚度為0.1微米至0.15微米，且該第二型淡摻雜層的厚度為0.2微米至0.6微米；以及將所使用的該罩幕層保留於該第二型淡摻雜層上；直接於所保留的該罩幕層的該些開口中形成多個第一電極，以分別接觸該些第二型重摻雜區；以及於該第一型基底的該第二表面上形成一第二電極。
  2. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該第一型為p型，以及該第二型為n型。
  3. 如申請專利範圍第2項所述之太陽能電池的製造方法，其中該第一摻質包括P。
  4. 如申請專利範圍第3項所述之太陽能電池的製造方法，其中該第二摻質包括As與Sb。
  5. 如申請專利範圍第2項所述之太陽能電池的製造方法，其中該第一摻質包括As。
  6. 如申請專利範圍第5項所述之太陽能電池的製造方法，其中該第二摻質包括Sb。
  7. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該第一型為n型，以及該第二型為p型。
  8. 如申請專利範圍第7項所述之太陽能電池的製造方法，其中該第一摻雜製程的溫度介於800℃與1000℃之間。
  9. 如申請專利範圍第8項所述之太陽能電池的製造方法，其中該第二摻雜製程的溫度介於700℃與900℃之間。
  10. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該第一摻雜製程的溫度介於800℃與1000℃之間。
  11. 如申請專利範圍第10項所述之太陽能電池的製造方法，其中該第二摻雜製程的溫度介於700℃與900之間。
  12. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該罩幕層包括一抗反射層。
  13. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該些第一電極的材料包括銀或鈦鈀銀。
  14. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該第二電極的材料包括鋁。
  15. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該些第一電極的形成方法包括印刷法。
  16. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該第一表面為織化表面，該第二型淡摻雜層的上表面為織化表面，以及各該第二型重摻雜區的上表面為織化表面。
  17. 如申請專利範圍第1項所述之太陽能電池的製造方法，其中該第二型淡摻雜層上的該罩幕層的厚度介於70奈米與90奈米之間，該第二型淡摻雜層經該罩幕層暴露出來的表面是多個分離的上表面，以及該罩幕層的材料包括氮化矽(Si3 N4 )、氧化矽(SiO2 )、氧化鈦(TiO2 )、氟化鎂(MgF2 )或上述之組合。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5258077A (en) * 1991-09-13 1993-11-02 Solec International, Inc. High efficiency silicon solar cells and method of fabrication
US20090068783A1 (en) * 2007-08-31 2009-03-12 Applied Materials, Inc. Methods of emitter formation in solar cells
US20090308440A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Formation of solar cell-selective emitter using implant and anneal method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101562207A (zh) * 2008-04-14 2009-10-21 黄麟 晶体硅太阳能电池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5258077A (en) * 1991-09-13 1993-11-02 Solec International, Inc. High efficiency silicon solar cells and method of fabrication
US20090068783A1 (en) * 2007-08-31 2009-03-12 Applied Materials, Inc. Methods of emitter formation in solar cells
US20090308440A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Formation of solar cell-selective emitter using implant and anneal method

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