JP2017022379A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 130
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 239000002019 doping agent Substances 0.000 claims abstract description 96
- 230000004888 barrier function Effects 0.000 claims abstract description 89
- 238000005468 ion implantation Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 57
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 description 33
- 239000012535 impurity Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 16
- 239000000463 material Substances 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 229910015900 BF3 Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- -1 BF 3 Chemical compound 0.000 description 2
- 150000001639 boron compounds Chemical class 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006690 co-activation Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
【解決手段】本発明の実施例による太陽電池の製造方法は、半導体基板にまたは半導体層の少なくとも一面上にバリア膜を形成する段階と、前記バリア膜を通じて第1導電性ドーパントをイオン注入して前記半導体基板または前記半導体層の前記一面に第1導電領域を形成する段階と、前記バリア膜を除去する段階とを含む。
【選択図】図1
Description
Claims (20)
- 半導体基板にまたは半導体層の少なくとも一面上にバリア膜を形成する段階と、
前記バリア膜を通じて第1導電性ドーパントをイオン注入して前記半導体基板または前記半導体層の前記一面に第1導電領域を形成する段階と、
前記バリア膜を除去する段階と、
を含む、太陽電池の製造方法。 - 前記バリア膜が、シリコン酸化物、シリコン窒化物及びシリコン炭化物の少なくとも1種を含む、請求項1に記載の太陽電池の製造方法。
- 前記バリア膜がシリコン酸化物を含み、屈折率が1.4〜1.6である、
前記バリア膜がシリコン窒化物を含み、屈折率が1.9〜2.3である、又は、
前記バリア膜が前記シリコン炭化物を含み、屈折率が2.0〜2.6である、請求項2に記載の太陽電池の製造方法。 - 前記半導体基板または前記半導体層の一面上の前記バリア膜の厚さが5nm〜50nmである、請求項1に記載の太陽電池の製造方法。
- 前記第1導電性ドーパントがホウ素を含む、請求項1に記載の太陽電池の製造方法。
- 前記バリア膜を形成する段階に先立ち、前記半導体基板または前記半導体層の他面に第2導電領域を形成する段階をさらに含む、請求項1に記載の太陽電池の製造方法。
- 前記バリア膜は、前記一面上に位置する第1部分と前記他面上に位置する第2部分を含み、
前記第2部分の厚さが前記第1部分の厚さと同一であるか又はより大きい、請求項6に記載の太陽電池の製造方法。 - 前記第1部分の厚さ:前記第2部分の厚さの割合が1:1〜1:2である、請求項7に記載の太陽電池の製造方法。
- 前記第1部分の厚さ:前記第2部分の厚さの割合が1:1.05〜1:1.5である、請求項8に記載の太陽電池の製造方法。
- 前記第1部分の厚さが5nm〜50nmであり、
前記第2部分の厚さが5nm〜100nmである、請求項7に記載の太陽電池の製造方法。 - 前記第1導電領域及び前記第2導電領域のそれぞれは質量分析器を使わないイオン注入によって形成される、請求項6に記載の太陽電池の製造方法。
- 前記第1導電領域は第1導電性ドーパントを含むフッ化物を含むガスを用いてイオン注入され、
前記第2導電領域は第2導電性ドーパントを含む水素化物を含むガスを用いてイオン注入される、請求項6に記載の太陽電池の製造方法。 - 前記第1導電領域を形成する段階は、
前記第1導電性ドーパントをイオン注入してドーパント層を形成する段階と、
前記ドーパント層を熱処理して前記第1導電性ドーパントを拡散させて活性化させる熱処理段階と、
を含む、請求項1に記載の太陽電池の製造方法。 - 前記ドーパント層は、前記バリア膜に形成される第1ドーパント層、及び前記バリア膜に隣接した前記半導体基板または前記半導体層の部分に形成される第2ドーパント層を含み、
前記第2ドーパント層の厚さが前記第1ドーパント層の厚さより薄い、請求項13に記載の太陽電池の製造方法。 - 前記第2ドーパント層の厚さが前記第1ドーパント層の厚さの20%〜40%である、請求項14に記載の太陽電池の製造方法。
- 前記第1導電領域の厚さが前記第1ドーパント層及び前記第2ドーパント層のそれぞれの厚さより厚い、請求項14に記載の太陽電池の製造方法。
- 前記第1導電領域の厚さが前記第1ドーパント層の10倍〜160倍である、請求項14に記載の太陽電池の製造方法。
- 半導体基板と、
前記半導体基板または前記半導体基板上に形成され、第1導電型を持つ第1導電領域、及び前記第1導電型と反対の第2導電型を持つ第2導電領域を含む導電領域と、
前記第1導電領域に連結される第1電極、及び前記第2導電領域に連結される第2電極を含む電極と、
を含み、
前記第1導電領域がホウ素(B)を第1導電性ドーパントとして含み、
前記第1導電領域のジャンクション深さが前記第2導電領域のジャンクション深さより小さく、
前記第1導電領域の表面ドーピング濃度と前記第2導電領域の表面ドーピング濃度が30%以内の差を持つ、太陽電池。 - 前記第2導電領域のジャンクション深さ:前記第1導電領域のジャンクション深さの割合が1:0.4〜1:0.8である、請求項18に記載の太陽電池。
- 前記第1導電領域のジャンクション深さが0.5μm〜0.8μmであり、
前記第2導電領域のジャンクション深さが0.8μm〜1.3μmである、請求項18に記載の太陽電池。
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US20160071990A1 (en) * | 2013-03-14 | 2016-03-10 | Q1 Nanosystems Corporation | Three-Dimensional Photovoltaic Devices Including Cavity-containing Cores and Methods of Manufacture |
KR101680036B1 (ko) * | 2015-07-07 | 2016-12-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR101859017B1 (ko) * | 2015-12-02 | 2018-05-17 | 삼성에스디아이 주식회사 | 전극 형성 방법, 이로부터 제조된 전극 및 태양 전지 |
TWM539701U (zh) * | 2016-08-24 | 2017-04-11 | 新日光能源科技股份有限公司 | 太陽能電池 |
KR102102823B1 (ko) * | 2018-10-30 | 2020-04-22 | 성균관대학교산학협력단 | 표면 구조를 이용한 선택적 에미터의 형성 방법 및 표면 구조를 이용한 선택적 에미터를 포함한 태양전지 |
CN117712199A (zh) | 2022-09-08 | 2024-03-15 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
CN117238987A (zh) | 2022-09-08 | 2023-12-15 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
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JP2009177145A (ja) * | 2007-12-28 | 2009-08-06 | Semiconductor Energy Lab Co Ltd | 光電変換装置の製造方法 |
WO2014147185A1 (fr) * | 2013-03-20 | 2014-09-25 | Mpo Energy | Procede de dopage de plaques de silicium |
US20140302620A1 (en) * | 2011-12-16 | 2014-10-09 | Jusung Engineering Co., Ltd. | Method for manufacturing solar cell |
WO2015036181A1 (de) * | 2013-09-13 | 2015-03-19 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur herstellung einer solarzelle umfassend eine dotierung durch ionenimplantation und abscheiden einer ausdiffusionsbarriere |
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JPS6215864A (ja) * | 1985-07-15 | 1987-01-24 | Hitachi Ltd | 太陽電池の製造方法 |
KR20090043328A (ko) * | 2007-10-29 | 2009-05-06 | 주식회사 하이닉스반도체 | 반도체 소자의 불순물 영역 형성방법 |
KR101027829B1 (ko) * | 2010-01-18 | 2011-04-07 | 현대중공업 주식회사 | 후면전극형 태양전지의 제조방법 |
KR101958819B1 (ko) * | 2012-01-27 | 2019-03-15 | 엘지전자 주식회사 | 양면 수광형 태양전지의 제조 방법 |
KR101680036B1 (ko) * | 2015-07-07 | 2016-12-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2009177145A (ja) * | 2007-12-28 | 2009-08-06 | Semiconductor Energy Lab Co Ltd | 光電変換装置の製造方法 |
US20140302620A1 (en) * | 2011-12-16 | 2014-10-09 | Jusung Engineering Co., Ltd. | Method for manufacturing solar cell |
WO2014147185A1 (fr) * | 2013-03-20 | 2014-09-25 | Mpo Energy | Procede de dopage de plaques de silicium |
WO2015036181A1 (de) * | 2013-09-13 | 2015-03-19 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur herstellung einer solarzelle umfassend eine dotierung durch ionenimplantation und abscheiden einer ausdiffusionsbarriere |
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EP3419059B1 (en) | 2019-12-25 |
EP3419059A1 (en) | 2018-12-26 |
KR101680036B1 (ko) | 2016-12-12 |
EP3116035B1 (en) | 2018-09-26 |
JP2019068108A (ja) | 2019-04-25 |
EP3116035A1 (en) | 2017-01-11 |
JP6538009B2 (ja) | 2019-07-03 |
US20170012148A1 (en) | 2017-01-12 |
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