JP6692865B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 239000002019 doping agent Substances 0.000 claims description 174
- 239000004065 semiconductor Substances 0.000 claims description 159
- 239000000758 substrate Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 58
- 239000007789 gas Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 239000005368 silicate glass Substances 0.000 claims description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 3
- 238000002161 passivation Methods 0.000 description 41
- 238000010438 heat treatment Methods 0.000 description 36
- 239000013078 crystal Substances 0.000 description 23
- 238000005468 ion implantation Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 14
- 230000004913 activation Effects 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011295 pitch Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 102100029860 Suppressor of tumorigenicity 20 protein Human genes 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Description
まず、図4及び図5Aに示すように、テクスチャリング段階ST10では、第2導電型ドーパントを有するベース領域10で構成される半導体基板110の前面及び背面の少なくとも一面が凹凸を有するようにテクスチャリングすることができる。
Claims (13)
- 半導体基板の一面に形成される第1導電型領域及び前記半導体基板の他面に形成される第2導電型領域を形成する、導電型領域形成段階と、
前記第1導電型領域に連結される第1電極及び前記第2導電型領域に連結される第2電極を形成する、電極形成段階と、
を有し、
前記導電型領域形成段階は、
前記半導体基板の他面で前記半導体基板に第2導電型ドーパントをイオン注入することにより前記第2導電型領域を形成する段階と、
前記第2導電型領域上に第2キャッピング膜を形成する段階と、
前記半導体基板の一面上に第1導電型ドーパントを含むドーパント層を形成する段階と、
前記ドーパント層の上に第1キャッピング膜を形成する段階を含み、
前記第2キャッピング膜の形成段階、前記ドーパント層の形成段階、及び前記第1キャッピング膜の形成段階は、常圧化学気相蒸着によりインサイチュ工程で実行され、
前記ドーパント層の第1導電型ドーパントが前記半導体基板の一面に向かって拡散し、前記第2導電型領域中の前記第2導電型ドーパントが前記第1導電型領域及び前記第2導電型領域を形成するように同時に活性化するように前記ドーパント層を熱処理する段階と、
前記第2キャッピング膜と、前記ドーパント層と前記第1キャッピング膜を除去する段階とを含む、
太陽電池の製造方法。 - 前記ドーパント層が、前記第1導電型ドーパントを含むシリケートガラスを含む、請求項1に記載の太陽電池の製造方法。
- 前記半導体基板がn型を有し、
前記ドーパント層がボロンシリケートガラス(BSG)を含む、請求項2に記載の太陽電池の製造方法。 - 前記ドーパント層の厚さが50nm乃至120nmである、請求項2に記載の太陽電池の製造方法。
- 前記第1導電型領域が、前記半導体基板の前面側に形成されるエミッタ領域であり、
前記第2導電型領域が、前記半導体基板の背面側に形成される背面電界領域である、請求項1に記載の太陽電池の製造方法。 - 前記第1導電型領域が前記半導体基板の前面に全体的に形成され、
前記第2導電型領域が前記半導体基板の背面で局部的に形成される局部的構造を有する背面電界領域である、請求項1に記載の太陽電池の製造方法。 - 前記第1導電型領域がp型を有し、
前記第2導電型領域がn型を有する、請求項1に記載の太陽電池の製造方法。 - 前記第2キャッピング膜を形成する段階と前記ドーパント層を形成する段階は、原料気体を変更することによって、互いに異なる物質を用いて実行される、請求項1に記載の太陽電池の製造方法。
- 前記第2キャッピング膜を形成する段階の温度と前記ドーパント層を形成する段階の温度との差が100℃以下である、請求項1に記載の太陽電池の製造方法。
- 前記第2キャッピング膜の厚さは前記ドーパント層の厚さより厚い、請求項1に記載の太陽電池の製造方法。
- 前記第2キャッピング膜を形成する段階は、酸素気体及びシリコン含有気体を含む原料気体を使用して実行され、
前記ドーパント層を形成する段階は、酸素気体、シリコン含有気体、及び前記第1導電型ドーパントを含むドーパント含有気体を使用して実行される、請求項1に記載の太陽電池の製造方法。 - 前記第2キャッピング膜の厚さが20nm以上である、請求項1に記載の太陽電池の製造方法。
- 前記第2キャッピング膜がシリコン酸化物を含む、請求項1に記載の太陽電池の製造方法。
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JPS5363993A (en) | 1976-11-19 | 1978-06-07 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
JP2573201B2 (ja) * | 1987-02-26 | 1997-01-22 | 株式会社東芝 | 半導体素子の拡散層形成方法 |
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JP5089906B2 (ja) * | 2006-04-05 | 2012-12-05 | 株式会社アルバック | 縦型化学気相成長装置 |
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KR101027829B1 (ko) * | 2010-01-18 | 2011-04-07 | 현대중공업 주식회사 | 후면전극형 태양전지의 제조방법 |
DE102010003784A1 (de) | 2010-04-09 | 2011-10-13 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
US8377738B2 (en) | 2010-07-01 | 2013-02-19 | Sunpower Corporation | Fabrication of solar cells with counter doping prevention |
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NL2010496C2 (en) * | 2013-03-21 | 2014-09-24 | Stichting Energie | Solar cell and method for manufacturing such a solar cell. |
EP2787541B1 (en) * | 2013-04-03 | 2022-08-31 | LG Electronics, Inc. | Solar cell |
DE102013209669A1 (de) | 2013-05-24 | 2014-11-27 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
DE102013210092A1 (de) | 2013-05-29 | 2014-12-04 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Solarzelle |
US9048374B1 (en) * | 2013-11-20 | 2015-06-02 | E I Du Pont De Nemours And Company | Method for manufacturing an interdigitated back contact solar cell |
KR102320551B1 (ko) * | 2015-01-16 | 2021-11-01 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
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US20160211403A1 (en) | 2016-07-21 |
KR102320551B1 (ko) | 2021-11-01 |
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JP2016134628A (ja) | 2016-07-25 |
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