US20170012148A1 - Solar cell and method of manufacturing the same - Google Patents

Solar cell and method of manufacturing the same Download PDF

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US20170012148A1
US20170012148A1 US15/204,447 US201615204447A US2017012148A1 US 20170012148 A1 US20170012148 A1 US 20170012148A1 US 201615204447 A US201615204447 A US 201615204447A US 2017012148 A1 US2017012148 A1 US 2017012148A1
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conductive area
conductive
dopant
barrier film
thickness
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Daeyong Lee
Junyong Ahn
Mann Yi
Jeongkyu KIM
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LG Electronics Inc
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LG Electronics Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiments of the present inventive concept relate to a solar cell and a method of manufacturing the same, and more particularly, to a solar cell, which has excellent properties attributable to improvement in a manufacturing method, and a method of manufacturing the same.
  • Solar cells may be manufactured by forming various layers and electrodes based on some design.
  • the efficiency of solar cells may be determined by the design of the various layers and electrodes.
  • the problem of low efficiency needs to be overcome, and thus, there is a demand to design the various layers and electrodes so as to maximize the efficiency of solar cells and to be manufactured via a simplified method.
  • the embodiments of the present inventive concept have been made in view of the above problems, and it is an object of the embodiments of the present inventive concept to provide a solar cell having excellent efficiency and high productivity and a method of manufacturing the same.
  • the above and other objects can be accomplished by the provision of a method of manufacturing a solar cell including forming a barrier film over at least one surface of a semiconductor substrate or a semiconductor layer, forming a first conductive area on the at least one surface of the semiconductor substrate or the semiconductor layer via ion implantation of a first conductive dopant through the barrier film, and removing the barrier film.
  • a solar cell including a semiconductor substrate, a conductive area formed on or over the semiconductor substrate, the conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type opposite to the first conductive type, and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, wherein the first conductive area includes boron as a first conductive dopant, wherein the first conductive area has a junction depth smaller than a junction depth of the second conductive area, and wherein a surface doping concentration in the first conductive area and a surface doping concentration in the second conductive area have a difference within 30%.
  • FIG. 1 is a sectional view illustrating one example of a solar cell manufactured by a method of manufacturing a solar cell in accordance with an embodiment of the present inventive concept
  • FIG. 2 is a partial rear plan view of the solar cell illustrated in FIG. 1 ;
  • FIGS. 3A to 3H are sectional views illustrating a method of manufacturing a solar cell in accordance with an embodiment of the present inventive concept.
  • FIG. 4 is a graph illustrating the concentration of a first conductive dopant depending on a distance from the surface of a semiconductor substrate in solar cells in accordance with an experimental example and a comparative example.
  • FIG. 1 is a sectional view illustrating one example of a solar cell, manufactured by a method of manufacturing a solar cell, in accordance with an embodiment of the present inventive concept
  • FIG. 2 is a partial rear plan view of the solar cell illustrated in FIG. 1 .
  • illustration is focused on a semiconductor substrate 110 and first and second electrodes 42 and 44 .
  • the solar cell in accordance with the present embodiment includes a semiconductor substrate 110 having a base area 10 , conductive areas 20 and 30 , and electrodes and 44 connected to the base area 10 and/or the conductive areas 20 and 30 .
  • the conductive areas 20 and 30 may include a first conductive area 20 of a first conductive type, and a second conductive area 30 of a second conductive type.
  • the first electrode 42 is electrically connected to the first conductive area 20
  • the second electrode 44 is electrically connected to the base area 10 or the second conductive area 30 .
  • the terms “first”, “second”, etc. are simply used in order to distinguish elements from each other, and the present inventive concept is not limited thereto.
  • the solar cell 100 may further include, for example, passivation films 22 and 32 and an anti-reflection film 24 . This will be described below in more detail.
  • the semiconductor substrate 110 may include the conductive areas 20 and 30 , and the base area 10 , which is a portion in which the conductive areas 20 and 30 are not formed.
  • the semiconductor substrate 110 may be formed of crystalline semiconductors.
  • the semiconductor substrate 110 may be formed of monocrystalline or polycrystalline semiconductors (e.g. monocrystalline or polycrystalline silicon).
  • the semiconductor substrate 110 may be formed of monocrystalline semiconductors (e.g. a monocrystalline semiconductor wafer, and more specifically, a semiconductor silicon wafer).
  • the solar cell 100 which includes the semiconductor substrate 110 formed as described above, is formed of crystalline semiconductors (e.g. monocrystalline semiconductors, such as monocrystalline silicon).
  • the solar cell 100 formed of crystalline semiconductors may achieve excellent electrical properties because the solar cell 100 is based on the semiconductor substrate 110 formed of monocrystalline semiconductors, which have few defects attributable to their high crystallinity.
  • each of the base area 10 and the conductive areas 20 and 30 may be defined by a dopant included therein.
  • an area of the semiconductor substrate 110 which includes a first conductive dopant, and thus, is of a first conductive type, may be defined as the first conductive area 20
  • an area of the semiconductor substrate 110 which includes a second conductive dopant at a low doping concentration, and thus, is of a second conductive type, may be defined as the base area 10
  • an area of the semiconductor substrate 110 which includes the second conductive dopant at a higher doping concentration than that in the base area 10 , and thus, is of the second conductive type, may be defined as the second conductive area 30 .
  • the base area 10 and the conductive areas 20 and 30 are areas, which have a crystalline structure of the semiconductor substrate 110 , are of different conductive types, and have different doping concentrations.
  • the present embodiment illustrates that the conductive areas 20 and 30 are doped area, which are formed by doping the inside of the semiconductor substrate 110 with different dopants, and constitute a portion of the semiconductor substrate 110 .
  • the embodiment of the present inventive concept is not limited thereto.
  • at least one of the first conductive area 20 and the second conductive area 30 may be formed of, for example, an amorphous, microcrystalline, or polycrystalline semiconductor layer, which is configured as a separate layer over the semiconductor substrate 110 .
  • Various other alterations are possible.
  • the first conductive type may be an n-type or a p-type
  • the second conductive type may be a p-type or an n-type opposite to the first conductive type.
  • Boron (B) which is a group III element, may be used as the p-type dopant
  • a group V element such as phosphorus (P), arsenic (As), bismuth (Bi), or antimony (Sb)
  • P phosphorus
  • As arsenic
  • Bi bismuth
  • Sb antimony
  • the second conductive dopant in the base area 10 and the second conductive dopant in the second conductive area 30 may be the same material, or may be different materials.
  • the first conductive area 20 may be of a p-type
  • the base area 10 and the second conductive area 30 may be of an n-type.
  • the first conductive area 20 may be of a p-type
  • the base area 10 and the second conductive area 30 may be of an n-type.
  • the front surface and/or the back surface of the semiconductor substrate 110 may be subjected to texturing so as to form protrusions having inclined outer surfaces (i.e. slopes on the front surface or the back surface of the semiconductor substrate 110 ).
  • the inclined surface of the protrusion may be configured by a specific surface of the semiconductor substrate 110 (e.g. ( 111 ) face of silicon), and the protrusion may take the form of a pyramid, the outer surface of which is ( 111 ) face.
  • the quantity of light, which reaches a pn junction formed on the interface of the base area 10 and the first conductive area 20 may be increased, which may minimize the loss of light.
  • the embodiment of the present inventive concept is not limited thereto, and no protrusion may be formed on the front surface and the back surface of the semiconductor substrate 110 via texturing.
  • the first conductive area 20 may be formed on the front surface of the semiconductor substrate 110
  • the second conductive area 30 may be formed on the back surface of the semiconductor substrate 110 . That is, the first conductive area 20 and the second conductive area 30 may be located with the base area 10 interposed therebetween.
  • the embodiment of the present inventive concept is not limited thereto.
  • the arrangement of the base area 10 , the first conductive area 20 , and the second conductive area 30 may be altered in various ways.
  • the first conductive area 20 may configure an emitter area for forming a pn junction with the base area 10 .
  • the second conductive area 30 may configure a back surface field area for forming a back surface field.
  • the back surface field area serves to prevent the loss of carriers attributable to recombination on the surface of the semiconductor substrate 110 (more accurately, the back surface of the semiconductor substrate 110 ).
  • each of the first conductive area 20 and the second conductive area 30 has a homogeneous structure having a consistent doping concentration in the entire region thereof.
  • the embodiment of the present inventive concept is not limited thereto.
  • at least one of the first conductive area 20 and the second conductive area 30 may have a selective structure.
  • a portion of the conductive area 20 or 30 proximate to the first or second electrode 42 and 44 may have a high doping concentration, low resistance, and deep junction depth, and the remaining portion may have a low doping concentration, high resistance, and shallow junction depth.
  • the second conductive area 30 may have a local structure. In the local structure, the second conductive area 30 may be locally formed so as to correspond to a portion in which the second electrode 44 is formed.
  • Insulation films such as the passivation films 22 and 32 and the anti-reflection film 24 , may be formed over the surface of the semiconductor substrate 110 .
  • the insulation films may be configured as undoped insulation films having no dopant.
  • the passivation film 22 may be formed over (e.g. in contact with) the front surface of the semiconductor substrate 110 , more accurately, over the first conductive area 20 formed on the semiconductor substrate 110 , and the anti-reflection film 24 may be formed over (e.g. in contact with) the passivation film 22 .
  • the passivation film 32 may be formed over the back surface of the semiconductor substrate 110 , more accurately, over the second conductive area 30 formed on the semiconductor substrate 110 .
  • the passivation film 22 and the anti-reflection film 24 may be formed substantially throughout the entire front surface of the semiconductor substrate 110 , excluding a portion corresponding to the first electrode (more accurately, a portion in which a first opening 102 is formed).
  • the passivation film 32 may be formed substantially throughout the entire back surface of the semiconductor substrate 110 , excluding a portion corresponding to the second electrode 44 (more accurately, a portion in which a second opening 104 is formed).
  • the passivation films 22 and 32 are formed in contact with the conductive areas 20 and 30 so as to passivate defects present in a surface or a bulk of the conductive areas 20 and 30 . This may remove recombination sites of minority carriers, thereby increasing the open-circuit voltage Voc of the solar cell 100 .
  • the anti-reflection film 24 reduces the reflectance of light introduced into the front surface of the semiconductor substrate 110 . Such a reduction in the reflectance of light, introduced through the front surface of the semiconductor substrate 110 , may increase the quantity of light reaching the pn-junction formed on the interface of the base area 10 and the first conductive area 20 . In this way, the short-circuit current Isc of the solar cell 100 may be increased.
  • the increased open-circuit voltage and the short-circuit current of the solar cell 100 attributable to the passivation films 22 and 32 and the anti-reflection film 24 may increase the efficiency of the solar cell 100 .
  • the passivation films 22 and 32 or the anti-reflection film 24 may be a single film or multiple films having the form of a combination of two or more films selected from among the group of a silicon nitride film, a silicon nitride film containing hydrogen, a silicon oxide film, a silicon oxide nitride film, an aluminum oxide film, MgF 2 , ZnS, TiO 2 and CeO 2 .
  • the passivation films 22 and 32 may include a silicon oxide film or a silicon nitride film having fixed positive charge when the conductive areas 20 and 30 are of the n-type, and may include an aluminum oxide film having fixed negative charge when the conductive areas 20 and 30 are of the p-type.
  • the anti-reflection film 24 may be formed of a silicon nitride.
  • the embodiment of the present inventive concept is not limited thereto, and the passivation films and 32 and the anti-reflection film 24 may include various materials.
  • the structure in which the insulation films are stacked one above another over the front surface and/or the back surface of the semiconductor substrate 110 may be altered in various ways.
  • the insulation films may be stacked in a sequence, which is different from the above-described stacking sequence.
  • at least one of the passivation films 22 and 32 and the anti-reflection film 24 described above may not be provided, or other insulation films excluding the passivation films 22 and 32 and the anti-reflection film described above may be provided.
  • Various other alterations are possible.
  • the first electrode 42 is electrically connected to the first conductive area 20 through the first opening 102 , which is formed in the insulation films disposed on the front surface of the semiconductor substrate 110 (e.g. the passivation film 22 and the anti-reflection film 24 ).
  • the second electrode 44 is electrically connected to the second conductive area 30 through the second opening 104 , which is formed in the insulation film disposed on the back surface of the semiconductor substrate 110 (e.g. the passivation film 32 ).
  • the first electrode 42 may come into contact with the first conductive area 20
  • the second electrode 44 may come into contact with the second conductive area 30 .
  • the first and second electrodes 42 and 44 may be formed of various materials (e.g. metal materials) so as to have various shapes. The shapes of the first and second electrodes 42 and 44 will be described below with reference to FIG. 2 .
  • each of the first and second electrodes 42 and 44 may include a plurality of finger electrodes 42 a or 44 a, which are spaced apart from one another at a constant pitch.
  • FIG. 2 illustrates that the finger electrodes 42 a or 44 a are parallel to one another and are also parallel to the edge of the semiconductor substrate 110 , the present inventive concept is not limited thereto.
  • the first and second electrodes 42 and 44 may include bus bar electrodes 42 b and 44 b, which are formed in the direction crossing the finger electrodes 42 a and 44 a so as to connect the finger electrodes 42 a and 44 a to one another.
  • bus bar electrode 42 b or 44 b Only one bus bar electrode 42 b or 44 b may be provided, or a plurality of bus bar electrodes 42 b or 44 b may be arranged at a larger pitch than the pitch of the finger electrodes 42 a or 44 a as exemplarily illustrated in FIG. 2 .
  • the width of the bus bar electrodes 42 b and 44 b may be larger than the width of the finger electrodes 42 a and 44 a, the present inventive concept is not limited thereto. Accordingly, the width of the bus bar electrodes 42 b and 44 b may be equal to or less than the width of the finger electrodes 42 a and 44 a.
  • both the finger electrode 42 a and the bus bar electrode 42 b of the first electrode 42 may be formed so as to penetrate the passivation film 22 and the anti-reflection film 24 . That is, the opening 102 may be formed so as to correspond to both the finger electrode 42 a and the bus bar electrode 42 b of the first electrode 42 .
  • both the finger electrode 44 a and the bus bar electrode 44 b of the second electrode 44 may be formed so as to penetrate the passivation film 32 .
  • the opening 104 may be formed so as to correspond to both the finger electrode 44 a and the bus bar electrode 44 b of the second electrode 44 .
  • the embodiment of the present inventive concept is not limited thereto.
  • the finger electrode 42 a of the first electrode 42 may be formed so as to penetrate the passivation film 22 and the anti-reflection film 24 and the bus bar electrode 42 b may be formed over the passivation film 22 and the anti-reflection film 24 .
  • the finger electrode 44 a of the second electrode 44 may be formed so as to penetrate the passivation film 32
  • the bus bar electrode 44 b may be formed over the passivation film 32 .
  • the first and second electrodes 42 and 44 of the solar cell 100 have a given pattern so that the solar cell 100 has a bi-facial structure to allow light to be introduced into the front surface and the back surface of the semiconductor substrate 110 .
  • the quantity of light for use in the solar cell 100 may be increased, which may contribute to improvement in the efficiency of the solar cell 100 .
  • FIG. 2 illustrates that the first electrode 42 and the second electrode 44 have the same shape.
  • the embodiment of the present inventive concept is not limited thereto, and for example, the widths and pitches of the finger electrodes 42 a and the bus bar electrodes 42 b of the first electrode 42 may be different from the widths and pitches of the finger electrodes 44 a and the bus bar electrodes 44 b of the second electrode 44 .
  • the first electrode 42 and the second electrode 44 may have different shapes, and various other alterations are possible.
  • the second electrode 44 may have no pattern and may be formed throughout the entire back surface of the semiconductor substrate 110 .
  • the conductive areas 20 and 30 having excellent properties may be formed via improvement in the process of forming the conductive areas 20 and 30 .
  • a barrier film 12 FIG. 3C
  • the first conductive area 20 including boron B may be formed when the first conductive area 20 including boron B is formed, which may reduce the junction depth of the first conductive area 20 .
  • the first conductive area 20 and the second conductive area 30 have similar surface doping concentrations (having a difference within 30%), the first conductive area 20 and the second conductive area 30 may have low contact resistance of the first electrode 44 or the second electrode 44 .
  • the surface doping concentration in the first conductive area 20 may be within a range from 1 ⁇ 10 19 /cm 3 to 1 ⁇ 10 21 /cm 3
  • the surface doping concentration of the second conductive area 30 may be within a range from 1 ⁇ 10 19 /cm 3 to 1 ⁇ 10 21 /cm 3 .
  • the embodiment of the present inventive concept is not limited thereto.
  • the junction depth of the first conductive area 20 is smaller than the junction depth of the second conductive area 30 .
  • the ratio of the junction depth of the second conductive area 30 to the junction depth of the first conductive area 20 may be within a range from 1:0.4 to 1:0.8.
  • the junction depth of the first conductive area 20 may be within a range from 0.5 ⁇ m to 0.8 ⁇ m
  • the junction depth of the second conductive area 30 may be within a range from 0.8 ⁇ m to 1.3 ⁇ m. This is because this range ensures that the first conductive area 20 sufficiently serves as an emitter area even while forming a shallow emitter.
  • the embodiment of the present inventive concept is not limited thereto.
  • the concentration of impurities in the first conductive area 20 and the second conductive area 30 may be maintained at a relatively low level.
  • the concentration of metal impurities (e.g. Mg, Al, Fe and Cr) in the first conductive area 20 may be similar to the concentration of metal impurities in the second conductive area 30 (so that a difference therebetween is within 20%).
  • the second conductive area 30 is formed using, for example, a hydride including a second conductive dopant (e.g. a hydride, such as PH 3 , when phosphorus is used as the second conductive dopant), and therefore, may have a low concentration of impurities despite the implementation of ion implantation without a mass analyzer.
  • the first conductive area 20 is formed via ion implantation using a fluoride including a first conductive dopant (e.g. a fluoride, such as BF 3 or B 2 F 4 when boron is used as the first conductive dopant), and thus, has a high possibility of including other impurities. Therefore, the barrier film 12 is provided in order to filter out the impurities. In this way, the first and second conductive areas 20 and 30 may have a low concentration of impurities even without using a mass analyzer.
  • a fluoride including a first conductive dopant e.g. a fluoride, such as BF 3 or B 2 F 4 when boron is used as the first conductive dopant
  • the first conductive area 20 including boron is the emitter area and the second conductive area 30 including phosphorous is the back surface field area.
  • the embodiment of the present inventive concept is not limited thereto.
  • the emitter area may be the second conductive area 30 including phosphorous
  • the back surface field area may be the first conductive area 20 including boron.
  • Various other alterations are possible.
  • FIGS. 3A to 3H are sectional views illustrating a method of manufacturing a solar cell in accordance with an embodiment of the present inventive concept.
  • the semiconductor substrate 110 which includes the base area 10 including a second conductive dopant, is prepared.
  • the semiconductor substrate 110 may be a silicon substrate (e.g. a silicon wafer) including an n-type dopant (in particular, phosphorous (P)).
  • the embodiment of the present inventive concept is not limited thereto, and the base area 10 may have an n-type dopant excluding phosphorus, or a p-type dopant.
  • the texturing on the surface of the semiconductor substrate 110 may be wet or dry texturing. Wet texturing may be performed by dipping the semiconductor substrate 110 into a texturing solution, and has the advantage of a short process time. Dry texturing is the process of grinding the surface of the semiconductor substrate 110 using, for example, a diamond grill or laser, and may entail the disadvantages of a long process time and the potential for damage to the semiconductor substrate 110 , although it may be advantageous in that protrusions are formed evenly.
  • the texturing on the semiconductor substrate 110 may be, for example, by reactive ion etching (RIE). As such, in the present inventive concept, the semiconductor substrate 110 may be subjected to texturing via various methods.
  • RIE reactive ion etching
  • FIG. 3A illustrates that both the front surface and the back surface of the semiconductor substrate 110 are subjected to texturing so that the reflectance of light introduced through the front surface and the back surface is minimized.
  • the embodiment of the present inventive concept is not limited thereto, and various other alterations are possible.
  • the conductive areas 20 and 30 are formed on or over the semiconductor substrate 110 .
  • the first conductive area 20 is formed by doping the front surface of the semiconductor substrate 110 with a first conductive dopant
  • the second conductive area 30 is formed by doping the back surface of the semiconductor substrate 110 with a second conductive dopant. The process of forming the first and second conductive areas 20 and 30 will be described in more detail.
  • the second conductive area 30 is formed on the back surface of the semiconductor substrate 110 .
  • Any one known method may be used as the doping process of forming the second conductive area 30 .
  • various methods such as ion implantation, thermal diffusion using heat treatment in the state in which gas including a dopant is used, heat treatment performed after a doped layer is formed, and laser doping, may be applied.
  • the second conductive area 30 may be formed in a simplified manner only over the back surface of the semiconductor substrate 110 via ion implantation.
  • the second conductive area 30 for forming a back surface field area which does not require a relatively high purity, may be formed by an ion implanter not using a mass analyzer. Thereby, equipment cost and manufacturing time may be reduced, which may result in improved productivity.
  • the embodiment of the present inventive concept is not limited thereto.
  • the barrier film 12 is formed on the front surface and the back surface of the semiconductor substrate 110 .
  • the barrier film 12 may allow a desired dopant or ions to pass or diffuse in the following doping process of forming the first conductive area 20 , and may prevent the passage or diffusion of other elements.
  • the barrier film 12 may be formed of a specific material and may have a specific thickness or a specific index of refraction.
  • the barrier film 12 may be formed of or include a silicon oxide layer including a silicon oxide, a silicon nitride layer including a silicon nitride, or a silicon carbide layer including a silicon carbide.
  • the silicon oxide layer, the silicon nitride layer, or the silicon carbide layer may be formed at a low temperature on the semiconductor substrate 110 including silicon, and may be easily removed.
  • the barrier film 12 may be formed of a silicon oxide layer.
  • the embodiment of the present inventive concept is not limited thereto, and the barrier film 12 may include any other material.
  • the index of refraction of the barrier film 12 may be within a range from 1.4 to 1.6.
  • the index of refraction of the barrier film 12 may be within a range from 1.9 to 2.3.
  • the index of refraction of the barrier film 12 may be within a range from 2.0 to 2.6.
  • the barrier film 12 having this range of index of refraction may have a stabilized structure, thus effectively exerting barrier effects.
  • the embodiment of the present inventive concept is not limited thereto, and the index of refraction of the barrier film 12 may change according to, for example, the material and composition of the barrier film 12 .
  • the barrier film 12 when boron is used as a dopant, B 11 ions, which are directly involved in doping, may diffuse or pass through the barrier film 12 .
  • the barrier film 12 may prevent or restrict the diffusion or passage of a boron compound (e.g. a boron fluoride, BF + or BF 2+ ), SiF x , and other metal impurities (e.g. Mg, Al, Fe, and Cr), which are heavier and larger than B 11 ions.
  • a boron compound e.g. a boron fluoride, BF + or BF 2+
  • SiF x silicon oxide
  • other metal impurities e.g. Mg, Al, Fe, and Cr
  • B 11 ions are small and light and thus may easily pass through the barrier film 12
  • BF + , BF 2+ , SiF x , and metal impurities e.g. Mg, Al, Fe, and Cr
  • the thickness of a first portion 121 of the barrier film 12 which is formed on the front surface of the semiconductor substrate 110 , may be equal to or less than the thickness of a second portion 122 of the barrier film 12 , which is formed on the back surface of the semiconductor substrate 110 .
  • the second portion 122 formed over the second conductive area 30 , has a growth rate equal to or greater than that of the first portion 121 formed over the undoped front surface of the semiconductor substrate 110 .
  • the second portion 122 may serve as an outward diffusion prevention film for preventing the second conductive dopant, included in the second conductive area 30 , from diffusing outward.
  • the ratio of the thickness of the first portion 121 to the thickness of the second portion 122 may be within a range from 1:1 to 1:2.
  • the second portion 122 may not sufficiently serve as the outward diffusion prevention film. It may be difficult to form the first portion 121 and the second portion 122 so that the ratio exceeds 1:2.
  • the ratio of the thickness of the first portion 121 to the thickness of the second portion 122 may be within a range from 1:1.05 to 1:1.5 in consideration of, for example, the effects and process conditions of the second portion 122 .
  • the embodiment of the present inventive concept is not limited thereto.
  • the thickness ratio described above may change according to the doping concentration in the second conductive area 30 .
  • the thickness of the first portion 121 may be within a range from 5 nm to 50 nm, and the thickness of the second portion 122 may be within a range from 5 nm to 100 nm.
  • the barrier film 12 may not sufficiently prevent the diffusion of impurities excluding dopant ions.
  • the thickness of the barrier film 12 exceeds 50 nm, the process time of forming the barrier film 12 may be increased, thus causing deterioration in productivity.
  • the embodiment of the present inventive concept is not limited thereto, and the thickness of the barrier film 12 may have a different value according to, for example, the material and composition of the barrier film 12 .
  • the second portion 122 When the thickness of the second portion 122 is below 5 nm, the second portion 122 may not sufficiently serve as the outward diffusion prevention film. When the thickness of the barrier film 12 exceeds 100 nm, the process time of forming the barrier film 12 may be increased, thus causing deterioration in productivity.
  • the thickness of the second portion 122 may be within a range from 10 nm to 100 nm so that the second portion 122 effectively serves as the outward diffusion prevention film.
  • a portion of the barrier film 12 which is located on the side surface of the semiconductor substrate 110 , may have the same thickness as the first portion 121 or the second portion 122 (e.g. so that a difference between the thicknesses is within 10%) according to whether the second conductive area 30 is located on the side surface of the semiconductor substrate 110 . That is, when the second conductive area 30 is located on the side surface of the semiconductor substrate 110 , a portion of the barrier film 12 located on the side surface of the semiconductor substrate 110 may have the same thickness as the second portion 122 . When the second conductive area 30 is not located on the side surface of the semiconductor substrate 110 , a portion of the barrier film 12 located on the side surface of the semiconductor substrate 110 may have the same thickness as the first portion 121 .
  • the embodiment of the present inventive concept is not limited thereto.
  • the thickness of the barrier film 12 may change according to, for example, the material or composition of the barrier film 12 .
  • the barrier film 12 may be formed via various methods.
  • the barrier film 12 may be formed via deposition.
  • the barrier film 12 may be formed via atmospheric pressure chemical vapor deposition (APCVD).
  • APCVD atmospheric pressure chemical vapor deposition
  • APCVD may allow the barrier film 12 to be easily formed under nonsevere process conditions and may allow the barrier film 12 to be formed on both the front surface and the back surface of the semiconductor substrate 110 via double-sided deposition.
  • the barrier film 12 may have no specific pattern or openings, and may be formed throughout the entire surface, i.e. throughout the front surface, the back surface, and the side surface of the semiconductor substrate 110 .
  • a dopant layer 200 is formed on the front surface of the semiconductor substrate 110 via the ion implantation of a first conductive dopant.
  • the introduced first conductive dopant passes through or penetrates a portion in which the barrier film 12 is formed, thereby reaching the front surface of the semiconductor substrate 110 .
  • the first conductive dopant passes through the barrier film 12 to thereby be introduced into the semiconductor substrate 110 .
  • the first conductive dopant may be boron (B). This is because boron ions are small and thus may easily pass through the barrier film 12 , whereas other materials are difficult to pass through the barrier film 12 .
  • the dopant layer 200 may include a first dopant layer 200 a formed on the barrier film 12 , and a second dopant layer 200 b formed on the semiconductor substrate 110 adjacent to the barrier film 12 .
  • the thickness T 2 of the second dopant layer 200 b may be less than the thickness T 1 of the first dopant layer 200 a. This is because the barrier film 12 prevents the dopant from being deeply doped into the semiconductor substrate 110 .
  • the thickness T 2 of the second dopant layer 200 b may be within a range from 20% to 40% of the thickness of the dopant layer 200 . Because the second dopant layer 200 b is relatively thin, the first conductive area 20 formed from the second dopant layer 200 b may be thinner than the second conductive area 30 .
  • an ion implanter having a mass analyzer is used to introduce only B 11 ⁇ ions, required for doping, into the first conductive area 20 or the dopant layer 200 for forming the same while removing impurities or unnecessary ions, i.e. a boron compound (e.g. boron fluoride, BF + or BF 2+ ), SiF x , and metal impurities (e.g. Mg, Al, Fe and Cr).
  • a boron compound e.g. boron fluoride, BF + or BF 2+
  • SiF x silicon fluoride
  • metal impurities e.g. Mg, Al, Fe and Cr
  • the ion implanter having a mass analyzer has expensive equipment cost and increased process time, thus causing low productivity.
  • performing ion implantation without a mass analyzer may cause remarkable deterioration in the properties of the first conductive area 20 due to the impurities or unnecessary ions.
  • an undesired portion e.g. a portion in which the second conductive area 30 is formed
  • an undesired portion may be easily doped in a high temperature process, causing counter doping. This may deteriorate the properties of the second conductive area 30 .
  • the barrier film 12 filters out materials excluding a dopant (or dopant ions), which may increase the purity of the dopant layer 200 or the first conductive area 20 .
  • an ion implanter having no mass analyzer may be used. That is, in the present embodiment, a low-priced plasma-assisted deposition type ion implanter having no mass analyzer may be used, which may reduce the equipment cost and process time, thereby improving productivity.
  • the second portion 122 of the barrier film 12 may prevent the outward diffusion of the second conductive dopant included in the second conductive area 30 , and may prevent the first conductive dopant from being introduced into the second conductive area 30 . Thereby, the second conductive area 30 may maintain excellent properties thereof.
  • the dopant in the first conductive area 20 which functions as an emitter area, may be introduced in the state in which impurities are removed using the barrier film 12 , whereby the purity and properties of the first conductive area 20 , which is directly involved in photoelectric conversion, may be improved.
  • the embodiment of the present inventive concept is not limited thereto, and the second conductive area 30 may include boron, and ion implantation may be performed on the second conductive area 30 in the state in which impurities are removed using the barrier film 12 .
  • Various other alterations are possible.
  • the first conductive area 20 is formed via heat treatment by diffusing the first conductive dopant to the front surface of the semiconductor substrate 110 and activating the first conductive dopant.
  • the thickness T 3 of the first conductive area 20 may be greater than the thickness of the barrier film 12 (or the thickness T 1 of the first dopant layer 200 a ) and the thickness T 2 of the second dopant layer 200 b.
  • the thickness T 3 of the first conductive area 20 may be within a range from 10 times to 160 times (e.g. within a range from 10 times to 100 times) the thickness T 1 of the first dopant layer 200 a. When the ratio is below 10 times, it is difficult to sufficiently form the first conductive area 20 .
  • the embodiment of the present inventive concept is not limited thereto, and the thicknesses of the first conductive area 200 a, the second conductive layer 200 b, and the first conductive area 30 may have various values.
  • the first conductive area 20 may also be thinner than the second conductive area 30 .
  • the first conductive area 20 is formed via the heat treatment of the dopant layer 200 from which impurities or unnecessary ions have been filtered out as described above, the first conductive area 20 may also have low concentration of impurities, thus achieving high purity and improved properties.
  • the second portion 122 of the barrier film 12 may effectively prevent the first conductive dopant in the dopant layer 200 , formed on the front surface of the semiconductor substrate 100 , from being introduced to the back surface of the semiconductor substrate 110 . Thereby, deterioration in the purity or properties of the second conductive area 30 attributable to counter doping may be effectively prevented.
  • a heat treatment temperature may be within a range from 950 degrees Celsius to 1250 degrees Celsius. Although this temperature range is limited to a temperature at which the introduced first conductive dopant may effectively diffuse, the present inventive concept is not limited thereto.
  • the activation of the dopant may be achieved during heat treatment, which may simplify the manufacturing process.
  • the present embodiment illustrates that activation heat treatment is performed immediately after the dopant layer 200 is formed in the state in which the barrier film is present.
  • the embodiment of the present inventive concept is not limited thereto, and heat treatment may be performed after the barrier film 12 is removed.
  • activation may be performed in another high temperature process, rather than being performed during heat treatment.
  • Various other alterations are possible.
  • the barrier film 12 is removed.
  • the barrier film 12 may be removed various known methods.
  • diluted hydrofluoric acid HF may be used to remove the barrier film 12 .
  • a process of using diluted hydrofluoric acid may be performed as a separate process, or the barrier film 12 may be removed using diluted hydrofluoric acid in a washing process.
  • insulation films are formed over the front surface of the semiconductor substrate 110 (or over the first conductive area 20 ) and/or the back surface of the semiconductor substrate 110 (or over the second conductive area 30 ).
  • the first passivation film 22 and the anti-reflection film 24 are formed over the first conductive area 20
  • the second passivation film 32 is formed over the second conductive area 30 .
  • the embodiment of the present inventive concept is not limited thereto, and only at least one of the first and second passivation films 22 and 32 and the anti-reflection film 24 may be formed.
  • the first passivation film 22 , the anti-reflection film 24 and/or the second passivation film 32 may be formed via various methods, such as vacuum deposition, chemical vapor deposition, spin coating, screen printing, or spray coating.
  • the first and second electrodes 42 and 44 connected respectively to the first and second conductive areas 20 and 30 are formed.
  • the first and second electrodes 42 and 44 may be formed in the openings 102 and 104 by using a conductive material via various methods, such as plating or deposition.
  • first and second electrodes 42 and 44 may be applied on the first passivation film 22 , the anti-reflection film 24 , and/or the second passivation film 32 via screen printing or the like, for example, fire-through phenomenon or laser firing contact may be used in order to form the first and second electrodes 42 and 44 having the above-described shape.
  • fire-through phenomenon or laser firing contact may be used in order to form the first and second electrodes 42 and 44 having the above-described shape.
  • no process of forming the first and second openings 102 and 104 is added.
  • ion implantation may be performed even without a mass analyzer in the state in which, for example, impurities excluding dopant ions required for ion implantation are removed using the barrier film 12 .
  • impurities excluding dopant ions may be confined inside the barrier film 12 , or only an extremely small amount of impurities may pass through the barrier film 12 , the concentration of impurities inside the dopant layer 200 or the first conductive area 20 may be considerably reduced. Thereby, the concentration of impurities in the first conductive area 20 may be reduced, which may result in improved purity and properties.
  • the equipment cost and the process time may be reduced, which may result in improved productivity.
  • the barrier film 12 serves to reduce the distance over which dopant ions diffuse, the thickness T 3 or the junction depth of the first conductive area 20 may be reduced. Thereby, a thin emitter may be formed, which may reduce the saturation current of the solar cell 100 , and consequently may increase the open-circuit voltage Voc of the solar cell 100 .
  • the barrier film 12 may prevent the second conductive area from being doped with the first conductive dopant in the process of forming the first conductive area 20 , thereby maintaining the excellent properties of the second conductive area 30 .
  • the first and second conductive areas 20 and 30 have been described above as doped areas inside the semiconductor substrate 110 by way of example.
  • the embodiment of the present inventive concept is not limited thereto, and at least one of the conductive areas and 30 (in particular, the first conductive area 20 ) may be configured as a separate amorphous, microcrystalline or polycrystalline semiconductor layer over the semiconductor substrate 110 .
  • the description of the semiconductor substrate 110 associated with the first conductive area 20 may be applied to the semiconductor layer.
  • the thickness of the barrier film on the front surface was 20 nm
  • the thickness of the barrier film on the back surface was 30 nm
  • the index of refraction of the barrier film was 1.45.
  • a dopant layer was formed on the front surface of the semiconductor substrate by injecting boron (B) using a plasma-assisted ion implanter having no mass analyzer.
  • heat treatment was performed at 1000 degrees Celsius to activate boron included in the dopant layer while diffusing the same to the front surface of the semiconductor substrate so as to form an emitter layer, and to activate the back surface field layer.
  • the barrier film was removed using diluted hydrofluoric acid.
  • a front passivation film and an anti-reflection film were formed on the front surface of the semiconductor substrate, and a back passivation film was formed on the back surface of the semiconductor substrate.
  • a first electrode connected to the emitter layer and a second electrode connected to the back surface field layer were formed. Thereby, a solar cell was manufactured.
  • a solar cell was manufactured by the same method as the experimental example, excluding that boron is introduced into the front surface of the semiconductor substrate using a plasma-assisted ion implanter without forming a barrier film.
  • the concentration of the first conductive dopant depending on the distance from the surface (front surface) of the semiconductor substrate is illustrated in FIG. 4 .
  • the junction depth Xj in the solar cell of the experimental example is smaller than the junction depth Xj' in the solar cell of the comparative example. It is assumed that this is because boron diffuses to the semiconductor substrate after passing through the barrier film, and thus has a relatively small thickness in the experimental example.
  • the reduced junction depth as in the experimental example may reduce saturation current, thus increasing the open-circuit voltage of the solar cell. Thereby, it can be appreciated that the efficiency of the solar cell of the experimental example may be improved.

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160071990A1 (en) * 2013-03-14 2016-03-10 Q1 Nanosystems Corporation Three-Dimensional Photovoltaic Devices Including Cavity-containing Cores and Methods of Manufacture
US20170162727A1 (en) * 2015-12-02 2017-06-08 Samsung Sdi Co., Ltd. Method of forming electrode, electrode manufactured therefrom and solar cell
US20180062002A1 (en) * 2016-08-24 2018-03-01 Neo Solar Power Corp. Solar cell
US20200135944A1 (en) * 2018-10-30 2020-04-30 Research & Business Foundation Sungkyunkwan University Method for manufacturing selective emitter using surface structure and solar cell including selective emitter using surface structure

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101680036B1 (ko) * 2015-07-07 2016-12-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN117238987A (zh) 2022-09-08 2023-12-15 浙江晶科能源有限公司 太阳能电池及光伏组件
CN117712199A (zh) 2022-09-08 2024-03-15 浙江晶科能源有限公司 太阳能电池及光伏组件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120282732A1 (en) * 2010-01-18 2012-11-08 Hyundai Heavy Industries Co., Ltd. Method for fabricating a back contact solar cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
KR20090043328A (ko) * 2007-10-29 2009-05-06 주식회사 하이닉스반도체 반도체 소자의 불순물 영역 형성방법
JP5572307B2 (ja) * 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
TWI572052B (zh) * 2011-12-16 2017-02-21 周星工程有限公司 太陽能電池之製造方法
KR101958819B1 (ko) * 2012-01-27 2019-03-15 엘지전자 주식회사 양면 수광형 태양전지의 제조 방법
FR3003687B1 (fr) * 2013-03-20 2015-07-17 Mpo Energy Procede de dopage de plaques de silicium
DE102013218351A1 (de) * 2013-09-13 2015-03-19 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
KR101680036B1 (ko) * 2015-07-07 2016-12-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120282732A1 (en) * 2010-01-18 2012-11-08 Hyundai Heavy Industries Co., Ltd. Method for fabricating a back contact solar cell

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160071990A1 (en) * 2013-03-14 2016-03-10 Q1 Nanosystems Corporation Three-Dimensional Photovoltaic Devices Including Cavity-containing Cores and Methods of Manufacture
US20170162727A1 (en) * 2015-12-02 2017-06-08 Samsung Sdi Co., Ltd. Method of forming electrode, electrode manufactured therefrom and solar cell
US9705014B2 (en) * 2015-12-02 2017-07-11 Samsung Sdi Co., Ltd. Method of forming electrode, electrode manufactured therefrom and solar cell
US20180062002A1 (en) * 2016-08-24 2018-03-01 Neo Solar Power Corp. Solar cell
US20200135944A1 (en) * 2018-10-30 2020-04-30 Research & Business Foundation Sungkyunkwan University Method for manufacturing selective emitter using surface structure and solar cell including selective emitter using surface structure
US10861987B2 (en) * 2018-10-30 2020-12-08 Research & Business Foundation Sungkyunkwan University Method for manufacturing selective emitter using surface structure and solar cell including selective emitter using surface structure

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