FR3003687B1 - Procede de dopage de plaques de silicium - Google Patents

Procede de dopage de plaques de silicium

Info

Publication number
FR3003687B1
FR3003687B1 FR1300650A FR1300650A FR3003687B1 FR 3003687 B1 FR3003687 B1 FR 3003687B1 FR 1300650 A FR1300650 A FR 1300650A FR 1300650 A FR1300650 A FR 1300650A FR 3003687 B1 FR3003687 B1 FR 3003687B1
Authority
FR
France
Prior art keywords
doping silicon
silicon plates
plates
doping
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1300650A
Other languages
English (en)
Other versions
FR3003687A1 (fr
Inventor
Bernard Bechevet
Johann Jourdan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Beam Services SA
Original Assignee
MPO Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1300650A priority Critical patent/FR3003687B1/fr
Application filed by MPO Energy filed Critical MPO Energy
Priority to JP2016503664A priority patent/JP2016520996A/ja
Priority to US14/777,798 priority patent/US20160204299A1/en
Priority to CN201480017013.8A priority patent/CN105580110A/zh
Priority to PCT/EP2014/055621 priority patent/WO2014147185A1/fr
Priority to EP14711268.4A priority patent/EP2976782A1/fr
Priority to KR1020157027263A priority patent/KR20150133739A/ko
Publication of FR3003687A1 publication Critical patent/FR3003687A1/fr
Application granted granted Critical
Publication of FR3003687B1 publication Critical patent/FR3003687B1/fr
Priority to US16/249,130 priority patent/US20190164761A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Sustainable Energy (AREA)
FR1300650A 2013-03-20 2013-03-20 Procede de dopage de plaques de silicium Active FR3003687B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1300650A FR3003687B1 (fr) 2013-03-20 2013-03-20 Procede de dopage de plaques de silicium
US14/777,798 US20160204299A1 (en) 2013-03-20 2014-03-20 Method for doping silicon sheets
CN201480017013.8A CN105580110A (zh) 2013-03-20 2014-03-20 掺杂硅片的方法
PCT/EP2014/055621 WO2014147185A1 (fr) 2013-03-20 2014-03-20 Procede de dopage de plaques de silicium
JP2016503664A JP2016520996A (ja) 2013-03-20 2014-03-20 シリコンウェーハーのドーピング方法
EP14711268.4A EP2976782A1 (fr) 2013-03-20 2014-03-20 Procede de dopage de plaques de silicium
KR1020157027263A KR20150133739A (ko) 2013-03-20 2014-03-20 실리콘 웨이퍼 도핑 방법
US16/249,130 US20190164761A1 (en) 2013-03-20 2019-01-16 Method for doping silicon sheets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1300650A FR3003687B1 (fr) 2013-03-20 2013-03-20 Procede de dopage de plaques de silicium

Publications (2)

Publication Number Publication Date
FR3003687A1 FR3003687A1 (fr) 2014-09-26
FR3003687B1 true FR3003687B1 (fr) 2015-07-17

Family

ID=48692556

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1300650A Active FR3003687B1 (fr) 2013-03-20 2013-03-20 Procede de dopage de plaques de silicium

Country Status (7)

Country Link
US (2) US20160204299A1 (fr)
EP (1) EP2976782A1 (fr)
JP (1) JP2016520996A (fr)
KR (1) KR20150133739A (fr)
CN (1) CN105580110A (fr)
FR (1) FR3003687B1 (fr)
WO (1) WO2014147185A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101680036B1 (ko) * 2015-07-07 2016-12-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN110190153B (zh) * 2019-05-31 2021-05-04 江苏顺风光电科技有限公司 高效选择性发射极太阳能电池扩散工艺

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2537559C3 (de) * 1975-08-22 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit einem Junction-Feldeffekttransistor und einem komplementären MIS-Feldeffekttransistor
US4131488A (en) * 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
JPS59155164A (ja) * 1983-02-24 1984-09-04 Toshiba Corp 半導体装置の製造方法
GB2172427A (en) * 1985-03-13 1986-09-17 Philips Electronic Associated Semiconductor device manufacture using a deflected ion beam
JPH0793282B2 (ja) * 1985-04-15 1995-10-09 株式会社日立製作所 半導体装置の製造方法
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
US7517709B1 (en) * 2007-11-16 2009-04-14 Applied Materials, Inc. Method of forming backside point contact structures for silicon solar cells
US20090227095A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
KR20110042053A (ko) * 2008-06-11 2011-04-22 솔라 임플란트 테크놀로지스 아이엔씨. 주입을 이용한 솔라 셀-선택 에미터의 형성 및 어닐링 방법
KR101145928B1 (ko) * 2009-03-11 2012-05-15 엘지전자 주식회사 태양 전지 및 태양 전지의 제조 방법
US9076914B2 (en) * 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
JP2011233656A (ja) * 2010-04-27 2011-11-17 Sharp Corp 半導体装置の製造方法
KR101724005B1 (ko) * 2011-04-29 2017-04-07 삼성에스디아이 주식회사 태양전지와 그 제조 방법
FR2976400B1 (fr) 2011-06-09 2013-12-20 Ion Beam Services Machine d'implantation ionique en mode immersion plasma pour procede basse pression.
JP5933198B2 (ja) * 2011-06-30 2016-06-08 株式会社アルバック 結晶太陽電池の製造方法
US8697559B2 (en) * 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece

Also Published As

Publication number Publication date
CN105580110A (zh) 2016-05-11
US20160204299A1 (en) 2016-07-14
US20190164761A1 (en) 2019-05-30
FR3003687A1 (fr) 2014-09-26
KR20150133739A (ko) 2015-11-30
JP2016520996A (ja) 2016-07-14
WO2014147185A1 (fr) 2014-09-25
EP2976782A1 (fr) 2016-01-27

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Owner name: ION BEAM SERVICES, FR

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