JP6526119B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP6526119B2 JP6526119B2 JP2017149116A JP2017149116A JP6526119B2 JP 6526119 B2 JP6526119 B2 JP 6526119B2 JP 2017149116 A JP2017149116 A JP 2017149116A JP 2017149116 A JP2017149116 A JP 2017149116A JP 6526119 B2 JP6526119 B2 JP 6526119B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 673
- 239000000758 substrate Substances 0.000 claims description 263
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- 238000000034 method Methods 0.000 claims description 107
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- 238000010438 heat treatment Methods 0.000 claims description 51
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- 239000000463 material Substances 0.000 claims description 45
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- 239000002003 electrode paste Substances 0.000 claims description 27
- 238000007639 printing Methods 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 239000002210 silicon-based material Substances 0.000 claims description 11
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- 238000005530 etching Methods 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
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- 230000007423 decrease Effects 0.000 description 8
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
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- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
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- 238000006731 degradation reaction Methods 0.000 description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
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- 229910004205 SiNX Inorganic materials 0.000 description 2
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
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- 238000009751 slip forming Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H01L31/0216—Coatings
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/1864—Annealing
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Description
〔先行技術文献〕
〔特許文献〕
〔特許文献1〕米国特許出願公開第2011/275175号明細書
〔特許文献2〕米国特許出願公開第2014/073105号明細書
Claims (22)
- 半導体基板の前面と後面及び側面の上にトンネル層を形成するトンネル層形成ステップと、
前記トンネル層の上に第1導電型の不純物がドーピングされた第1導電型半導体部を形成する第1導電型半導体部形成ステップと、
前記半導体基板の前面及び側面に形成された前記トンネル層及び前記第1導電型半導体部を全て除去し、前記半導体基板の後面の端に位置した、前記トンネル層及び前記第1導電型半導体部の一部を除去する除去ステップと、
前記半導体基板の前面に第2導電型の不純物をドーピングして第2導電型半導体部を形成する第2導電型半導体部形成ステップと、を含む、太陽電池の製造方法。 - 前記第1導電型半導体部の上に第1パッシベーション膜を形成する第1パッシベーション膜形成ステップをさらに含む、請求項1に記載の太陽電池の製造方法。
- 前記第2導電型半導体部の上に第2パッシベーション膜を形成するステップをさらに含む、請求項2に記載の太陽電池の製造方法。
- 前記第2導電型半導体部は、前記半導体基板の前面に前記第2導電型の不純物を拡散させて形成する、請求項1に記載の太陽電池の製造方法。
- 前記第1導電型半導体部は、前記半導体基板の結晶構造と異なり、非晶質シリコン材質、微結晶シリコン材質、又は多結晶シリコン材質の内、いずれか1つで形成される、請求項1に記載の太陽電池の製造方法。
- 前記第1パッシベーション膜の形成ステップの後、前記第1パッシベーション膜に開口部を形成するステップをさらに含む、請求項2に記載の太陽電池の製造方法。
- 前記第1導電型半導体部に接触する第1電極と前記第2導電型半導体部に接触する第2電極を形成する電極形成ステップをさらに含む、請求項1に記載の太陽電池の製造方法。
- 前記第1パッシベーション膜上に第1電極用ペーストを印刷した後、熱処理して、前記第1電極用ペーストが前記第1パッシベーション膜を貫通するようにする、第1電極形成ステップをさらに含む、請求項2に記載の太陽電池の製造方法。
- 前記第1電極形成ステップにおいて、熱処理最高温度は795℃乃至870℃である、請求項8に記載の太陽電池の製造方法。
- 前記第1電極形成ステップにおいて、複数の第1フィンガー電極用パターンと第1バスバー電極パターンを印刷する、請求項8に記載の太陽電池の製造方法。
- 前記第1フィンガー電極用パターンと前記第1バスバー電極パターンのそれぞれに含まれる材質は同一である、請求項10に記載の太陽電池の製造方法。
- 前記第1電極形成ステップにおいて、第1フィンガー電極用パターンと第1バスバー電極パターンは別の印刷工程でパターニングする、請求項8に記載の太陽電池の製造方法。
- 前記第1フィンガー電極用パターンに含まれる材質と前記第1バスバー電極パターンに含まれる材質は異なる、請求項12に記載の太陽電池の製造方法。
- 前記除去ステップにおいて、前記半導体基板の後面の内,端に位置した前記トンネル層及び前記第1導電型半導体部が除去されたアイソレーション部を形成し、
前記第1パッシベーション膜は前記アイソレーション部を含んで前記半導体基板の後面の上を全面的に覆う、請求項2に記載の太陽電池の製造方法。 - 前記除去ステップは、
前記半導体基板の後面で前記第1導電型半導体部の上に前記半導体基板より小さい面積を有するマスク層を形成するステップと、
前記マスク層が形成されない部分である前記半導体基板の後面端に位置した前記第1導電型半導体部及び前記トンネル層をエッチングするステップと、
前記マスク層を除去するステップと、を含む、請求項14に記載の太陽電池の製造方法。 - 前記半導体基板の側面の上に前記第2パッシベーション膜が位置し、前記第2パッシベーション膜の上に前記第1パッシベーション膜が位置する、請求項3に記載の太陽電池の製造方法。
- 前記第1導電型半導体部の形成ステップは、
前記トンネル層の上に真性半導体層を蒸着し、前記真性半導体層に第1導電型の不純物を拡散させる、請求項1に記載の太陽電池の製造方法。 - N型半導体基板の後面及び前面上にトンネル層を形成するトンネル層の形成ステップと、
前記N型半導体基板の後面及び前面上に形成された前記トンネル層のそれぞれの上に第1導電型不純物を有する第1導電型半導体部を形成するステップと、
前記N型半導体基板の前面に位置した前記トンネル層及び前記第1導電型半導体部の全部と前記N型半導体基板の後面の端に位置した、前記トンネル層及び前記第1導電型半導体部の一部を除去してアイソレーション部を形成するステップと、
前記N型半導体基板の前面に第2導電型不純物を拡散して第2導電型半導体部を形成するステップと、
前記第1導電型半導体部の上に第1パッシベーション膜を形成するステップと、
前記第1導電型半導体部に接続される第1電極及び前記第2導電型半導体部に接続される第2電極を形成する電極形成ステップとを含む、太陽電池の製造方法。 - 前記第1導電型はN型であり、前記第2導電型はP型である、請求項18に記載の太陽電池の製造方法。
- 前記第1導電型はP型であり、前記第2導電型はN型である、請求項18に記載の太陽電池の製造方法。
- 前記第1導電型半導体部は非晶質シリコン材質、微結晶シリコン材質、又は多結晶シリコン材質のいずれか一つで形成される、請求項18に記載の太陽電池の製造方法。
- 単結晶シリコン半導体基板の後面上にトンネル層を形成するステップと、
前記トンネル層上に第1導電型不純物を含む第1導電型多結晶シリコン層を形成するステップと、
前記単結晶シリコン半導体基板の前面に第2導電型の不純物をドーピングして第2導電型領域を形成するステップと、
前記第1導電型多結晶シリコン層の上に第1パッシベーション膜を形成する第1パッシベーション膜形成ステップと、
前記第1パッシベーション膜の上に第1電極パターンを印刷し、熱処理して、前記第1パッシベーション膜を貫通させて前記第1導電型多結晶シリコン層に接続する第1電極形成ステップと、を含む、太陽電池の製造方法。
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