TWI463682B - 異質接面太陽能電池 - Google Patents
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- 229910021417 amorphous silicon Inorganic materials 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 98
- 229910052732 germanium Inorganic materials 0.000 claims description 77
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 77
- 239000013078 crystal Substances 0.000 claims description 37
- 238000009792 diffusion process Methods 0.000 claims description 33
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 20
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 67
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver-aluminum Chemical compound 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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Description
本發明係有關於一種異質接面太陽能電池，尤指涉及一種在矽晶基板鍍製本質非晶矽薄膜而形成具有簡易製程特性之異質接面太陽能電池。
一般具有P-N接面結構之矽太陽能電池，其內部吸收光能後所產生之自由載子(Free Carrier)，即電子(Electron)與電洞(Hole)，係由P-N接面處之內建電場(Built-in Electric Field)驅動，而分別向負極與正極聚集，遂於電池兩端產生電壓，從而向外部電路輸出功率。此一傳統之矽太陽能電池製作之一例，係以具有P型電性摻雜之矽基板(P-doped Silicon Wafer)，使用鹼溶液製作粗紋化表面(Textured Surface)，然後以磷擴散(Phosphorous Diffusion)方法形成P-N接面。其後經過鍍膜、電極印刷與燒結諸道程序完成P-N接面太陽能電池。為了提升太陽能電池光電轉換效率，工業界提出一種使用非晶矽薄膜來降低載子之表面再結合速率(Surface Recombination Velocity)，以提升開路電壓(Open Circuit Voltage)與短路電流(Short Circuit Current)，遂而增加光電轉換效率，較知名之實例係由三洋電機公司(Sanyo Electric Co.,Ltd)所研發之異質接面(Heterojunction with Intrinsic Thin Layer,HIT)矽晶太陽能電池，其轉換效率達到23%(如參考文獻：E.Maruyama,et al.,“Sanyo's challenges to the development of high-efficiency HIT solar cells and the expansion of HIT business,”Conference
Record of the 4th World Conference on Photovoltaic Energy Conversion(WCPEC-4),Hawaii,May 2006；以及Photovoltaic Device,US patent,US 2006/0065297A1,2006)。
其製程係在較低溫，例如200℃之環境成長本質非晶矽層(Intrinsic Amorphous Silicon Layer)於N型矽晶基板之前、後表面，然後於前表面成長P型非晶矽薄膜，於背面成長N型非晶矽薄膜，致使太陽能電池照光側形成PIN結構，且具異質接面(Heterojunction)；而在背光側形成背表面場(Back Surface Field)結構，且具有異質接面。這些非晶矽薄膜之成長皆係以電漿化學氣相沉積方式(Plasma Chemical Vapour Deposition Method)進行。由於非晶矽之導電率較結晶矽為差，上述HIT太陽能電池之前、後表面各自以濺鍍(Sputter)方式鍍製透明導電氧化物薄膜(Transparent Conductive Oxide Film)。此一透明導電氧化物一方面增加載子傳導率，另一方面在前表面亦達到抗反射之功能。
前述HIT太陽能電池之所以達到高效率之因素係包括矽晶表面之清洗、本質非晶矽層對矽晶表面之鈍化作用、非晶矽與結晶矽之間之異質接面形成較高開路電壓、以及低溫製程等。其中低溫製程係確保非晶矽不轉變為結晶矽，俾保持其寬能隙特性以及異質接面特性。由於在P型非晶矽與N型結晶矽間具有不連續之共價帶能隙位階差(Abrupt Covalence Band Offset)，引起在介面(Interface)之高電位差，遂而減少在介面附近之多數載子數目以及產生較低之少數載子再結合速率，因而產生較高太陽能電池性能。然而，若以P型非晶矽直接與矽晶基板接觸，則又會在介面附近生成較多之缺隙
(Defect)，從而致使太陽能電池性能降低，故目前研究人員皆建議成長本質非晶矽層於P型非晶矽與N型矽晶基板之間，達到鈍化上述介面，而保有原以異質接面結構來提升太陽能電池之初衷。一般咸認本質非晶矽層係以本身具有之氫原子去修補結晶矽與非晶矽介面附近之缺隙，此即鈍化作用。惟在高溫下，例如300℃以上，氫原子即向P型非晶矽擴散移動，致使前述鈍化功能消減。為了阻擋這種氫原子擴散移動，三洋電機公司亦提出在P型非晶矽與本質非晶矽層之介面處調整氫原子含量與硼原子含量之方法。其基本原理係在該介面處形成擴散阻礙區(Diffusion Reducing Area)，以減少氫原子擴散(如前述參考文獻：Photovoltaic Device,US patent,US 2006/0065297A1,2006)。
為抑制非晶矽薄膜之結晶化而失去異質接面功效，例如非晶矽可鈍化結晶矽與非晶矽介面，以及形成寬能隙薄膜等功效，應用材料公司(Applied Materials,Inc)提出在結晶矽與非晶矽間生長一層約1奈米(nm)之二氧化矽層，之後再依序鍍製本質非晶矽層與電性摻雜之非晶矽層(doped amorphous silicon layer)形成HIT太陽能電池(如參考文獻：HIT Solar Cell Structure,US patent,US 2010/0186802A1,2010)。
於此大約同時亦有業界提出先於矽晶基板前表面以傳統擴散方式先形成P-N接面，亦即先形成一層擴散層，然後再依序於前、後表面成長本質非晶矽與電性摻雜之非晶矽層，最後鍍製透明導電氧化物層於前、後表面，接著在前、後表面印刷導電電極完成同時具有同質接面(Homojunction)與異質接面之矽太陽能電池(如參考文獻：Solar Cell Having Crystalline
Silicon P-N Homojunction and Amorphous Silicon Heterojunction for Surface Passivation,US patent,US 2009/0211627A1,2009)。該方法亦包括先以熱氧環境在矽晶基板表面成長一層二氧化矽層，隨即以濕蝕刻法去除之，以達到去除矽材料中之污染性雜質。有關此一習知技術所揭露之元件，如第3圖所示一種具有非晶矽薄膜之矽晶太陽能電池之結構示意圖，其具有同質接面與異質接面之矽晶基板太陽能電池200，包含在具電性摻雜之矽晶基板210上形成擴散層220。該擴散層220係以擴散方式在該矽晶基板210表面區域形成具有與矽晶基板210電性相反之電性摻雜，而構成P-N同質接面。隨後分別在矽晶基板210前、後表面鍍製本質非晶矽230、235以及電性摻雜之非晶矽240、245。該擴散層220與該本質非晶矽230之間，以及該矽晶基板210與該本質非晶矽235之間接形成異質接面。該本質非晶矽230、235之功能係作為鈍化介面之用；而電性摻雜之非晶矽240、245乃係提供加強性之內建電場來吸引載子，同時也因具有寬能隙特性，不僅大幅減少載子在介面區之再結合速率，亦增加開路電壓與短路電流，換言之，即增加太陽能電池之轉換效率。此結構亦包含透明導電氧化物250、255以及由網印方式塗佈之前電極260與背電極265。
依前述結構形成異質接面太陽能電池之方法，需多層非晶矽薄膜，成本與製程時間皆花費較多。因此，習知元件之製程較複雜，有礙量產化，故，一般習用者係無法符合使用者於實際使用時之所需。
本發明之主要目的係在於，克服習知技藝所遭遇之上述問題並提供一種在矽晶基板鍍製本質非晶矽薄膜而形成較具有簡易製程特性之異質接面太陽能電池者。
本發明之次要目的係在於，提供一種僅需鍍製一層本質非晶矽薄膜，抑或增加一層以化學生成法生長之二氧化矽薄膜，並且，更以被覆本質非晶矽薄膜之矽晶基板進行電性摻雜之擴散，使太陽能電池同時具有異質接面與同質接面，不僅在製程設備上較為經濟，且因係使用生產線之擴散設備，故相容於目前量產化製程。
為達以上之目的，本發明係一種異質接面太陽能電池，於另一較佳實施例，係在矽晶基板上鍍製一層本質非晶矽薄膜，然後置於擴散爐內形成P-N接面，以製作具有異質接面之太陽能電池，其至少包括含有電性摻雜之矽晶基板、覆蓋在該矽晶基板照光側表面之本質非晶矽薄膜、覆蓋在該本質非晶矽薄膜上之透明介電質層、覆蓋在該透明介電質層上之前電極及覆蓋在該矽晶基板背光側表面之背電極；於另一較佳實施例，係先在矽晶基板上以化學溶液生成法生長一層二氧化矽薄膜，然後鍍製一層本質非晶矽薄膜，其後置於擴散爐內形成P-N接面，以製作具有異質接面之太陽能電池，其至少包括含有電性摻雜之矽晶基板、覆蓋在該矽晶基板照光側表面之二氧化矽薄膜、覆蓋在該二氧化矽薄膜上之本質非晶矽薄膜、覆蓋在該本質非晶矽薄膜上之透明介電質層、覆蓋在該透明介電質層上之前電極及覆蓋在該矽晶基板背光側表面之背電極。
請參閱『第1圖』所示，係本發明一較佳實施例之結構示意圖。如圖所示：本發明係一種異質接面太陽能電池，至少包括一含有電性摻雜之矽晶基板310，於其照光側及背光側表面分別具有一矽晶基板表面區域305及一背表面場區域370，且該矽晶基板310之照光側表面含有同質接面；一本質非晶矽薄膜330，係覆蓋在該矽晶基板310照光側表面之矽晶基板表面區域305上，其電子能隙係大於該矽晶基板310電子能隙，且該本質非晶矽薄膜330含有電性摻雜形成異質接面，並與該矽晶基板表面區域305構成一擴散區域340；一透明介電質層350，係覆蓋在該矽晶基板310照光側表面之本質非晶矽薄膜330上；一前電極360，具線條形態，係覆蓋在該透明介電質層350之上；以及一背電極365，係覆蓋在該矽晶基板310背光側表面之背表面場區域370上，其中，該矽晶基板310原始摻雜濃度係小於1019cm-3，其照光側係具有粗紋化表面，且其厚度係介於50μm~660μm之間；該本質非晶矽薄膜330之厚度係在1nm至70nm之間；該透明介電質層350之厚度在250nm以下，其組成係自氮化矽(SiNx)、二氧化矽(SiO2)、銦錫氧化物(ITO)、氧化錫(SnO2)、氧化鋁鋅(AZO)或氧化鋅(ZnO)中擇其一，且該透明介電質層350可以透明導電氧化物取代之；該前、背電極360、365之組成係自鋁漿、銀漿、或銀鋁漿混合之印刷材料中擇其一；以及，該本質非晶矽薄膜330與該矽晶基板310之異質接面，與該矽晶基板310照光側之同質接面係由一次電性摻雜擴散形成。
於製備本發明時，首先係在具電性摻雜之矽晶基板310上以電漿輔助化學氣相沉積(PECVD)方式成長一層本質非晶矽薄膜330。該沉積方式具有低溫特性，使該本質非晶矽薄膜330薄膜維持寬能隙特性。然而，該本質非晶矽薄膜330將會承受之後在製作摻雜擴散時的高溫，而轉化為微晶矽，故此時沉積的方式使用較高溫的低壓化學氣相沉積(Low-Pressure Chemical Vapor Deposition,LPCVD)方式亦為適當，其溫度在700℃以下。
接著，進行電性摻雜之擴散，而摻雜元素(dopant)的選擇係使擴散區域340具有與矽晶基板310相反之摻雜電性(doping)。該擴散區域340包含本質非晶矽薄膜330以及矽晶基板表面區域305。舉例而言，如果矽晶基板310為P型矽，則擴散區域340為N型矽，且本質非晶矽薄膜330的摻雜濃度(doping concentration)高於矽晶基板表面區域305之摻雜濃度。之後，在本質非晶矽薄膜330上鍍製一層透明介電質層350。然後，在透明介電質層350之上塗佈柵狀電極線型態之前電極360，以及在矽晶基板310之背面塗佈背電極365。前、背電極360、365塗佈完成後，進行共燒，使前電極360與透明介電質層350具良好電性接觸，且在矽晶基板310之背面形成背表面場區域370。由於透明介電質層350在前、背電極360、365共燒時可能降低其導電度，本發明揭露之另一方法即是在電性摻雜之擴散程序完成之後，首先塗佈背電極365，然後進行650℃至850℃之間溫度的燒結，使矽晶基板310之背面形成背表面場區域370。此後才鍍製透明介電質層350以
及塗佈前電極360，並進行前電極360之燒結，此時的燒結溫度僅在於300℃至700℃之間即可，既不影響透明介電質層350之導電特性，亦使前電極360具良好電性接觸。
本實施例之該矽晶基板310照光側表面之本質非晶矽薄膜330下係可進一步具有一層氧化鋁薄膜(圖中未示)，且其厚度不超過10nm。
請參閱『第2圖』所示，係本發明另一較佳實施例之結構示意圖。如圖所示：本發明係一種異質接面太陽能電池，至少包括一含有電性摻雜之矽晶基板410，於其照光側及背光側表面分別具有一矽晶基板表面區域405及一背表面場區域470，且該矽晶基板410之照光側表面含有同質接面；一層二氧化矽薄膜420，係覆蓋在該矽晶基板410照光側表面之矽晶基板表面區域405上；一本質非晶矽薄膜430，係覆蓋在該矽晶基板410照光側表面之二氧化矽薄膜420上，其電子能隙係大於該矽晶基板410電子能隙，且該本質非晶矽薄膜430含有電性摻雜形成異質接面，並與該矽晶基板表面區域405及該二氧化矽薄膜420構成一擴散區域440；一透明介電質層450，係覆蓋在該矽晶基板410照光側表面之本質非晶矽薄膜430上；一前電極460，具線條形態，係覆蓋在該透明介電質層450之上；以及，一背電極465，係覆蓋在該矽晶基板410背光側表面之背表面場區域470上，其中，該矽晶基板原始摻雜濃度係小於1019cm-3，該二氧化矽薄膜厚度係不超過10nm；該化學溶液至少含有硝酸、硫酸、鹽酸、雙氧水、氨水以及磷酸之一，且其重量百分比濃度至少為5%。
本實施例之元件結構與上述『第1圖』所不同者，僅是增加了一層二氧化矽薄膜420於具電性摻雜之矽晶基板410上。此二氧化矽薄膜420的形成係以化學生成法，亦即將該矽晶基板410浸泡於化學溶液中致使在該矽晶基板410表面生長之，其厚度依浸泡時間長短而定。當浸泡時，該矽晶基板410係在至少4℃以上溶液溫度中浸泡至少2分鐘時間，待浸泡至生成該二氧化矽薄膜420完畢後，在介於100℃~1200℃高溫通氧環境中，經高溫退火至少達3分鐘。本發明成長二氧化矽薄膜420的目的，一方面是以其修補矽晶表面之斷鍵(dangling bond)，一方面則是抑制本質非晶矽薄膜430在高溫環境中的結晶化。在浸泡時，矽晶基板之背面亦生長二氧化矽層，因為其厚度不大，故不影響載子穿透。二氧化矽薄膜420生長之後，以PECVD或LPCVD成長本質非晶矽薄膜430，隨即進行電性摻雜元素之擴散，其擴散區域440包括本質非晶矽薄膜430、二氧化矽薄膜420以及矽晶基板表面區域405諸區域，其中本質非晶矽薄膜430的摻雜濃度高於矽晶基板表面區域405之摻雜濃度。其後續製程則進行透明介電質層450之鍍膜、前電極460以及背電極465之塗佈，經燒結後在矽晶基板410之背面形成背表面場區域470。
本發明之本質非晶矽薄膜之電性摻雜元素係可與該矽晶基板表面區域之摻雜元素相同，而與該矽晶基板之摻雜元素不同；亦或，本發明之本質非晶矽薄膜之電性摻雜元素係可與該矽晶基板表面區域之摻雜元素相同，並與該矽晶基板原始之摻
雜元素亦相同，且該本質非晶矽薄膜摻雜濃度係大於該矽晶基板原始之摻雜濃度。
綜上所述，本發明係一種異質接面太陽能電池，可有效改善習用之種種缺點，具有簡易製程特性，不需要多層本質非晶矽薄膜，在製程上僅需成長一層本質非晶矽薄膜於矽晶基板前表面區域，抑或增加一層以化學生成法生長之二氧化矽薄膜，在製程設備上較為經濟，且在量產化程度上亦有優勢，此外，更以被覆本質非晶矽薄膜之矽晶基板進行電性摻雜之擴散，使太陽能電池同時具有異質接面與同質接面，且相容於目前量產化製程而易於量產，進而使本發明之產生能更進步、更實用、更符合使用者之所須，確已符合發明專利申請之要件，爰依法提出專利申請。
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。
305‧‧‧矽晶基板表面區域
310‧‧‧矽晶基板
330‧‧‧本質非晶矽薄膜
340‧‧‧擴散區域
350‧‧‧透明介電質層
360‧‧‧前電極
365‧‧‧背電極
370‧‧‧背表面場區域
405‧‧‧矽晶基板表面區域
410‧‧‧矽晶基板
420‧‧‧二氧化矽薄膜
430‧‧‧本質非晶矽薄膜
440‧‧‧擴散區域
450‧‧‧透明介電質層
460‧‧‧前電極
465‧‧‧背電極
470‧‧‧背表面場區域
200‧‧‧矽晶基板太陽能電池
210‧‧‧矽晶基板
220‧‧‧擴散層
230、235‧‧‧本質非晶矽
240、245‧‧‧電性摻雜之非晶矽
250、255‧‧‧透明導電氧化物
260‧‧‧前電極
265‧‧‧背電極
第1圖，係本發明一較佳實施例之結構示意圖。
第2圖，係本發明另一較佳實施例之結構示意圖。
第3圖，係習知具有本質非晶矽薄膜之矽晶太陽能電池結構示意圖。
305‧‧‧矽晶基板表面區域
310‧‧‧矽晶基板
330‧‧‧本質非晶矽薄膜
340‧‧‧擴散區域
350‧‧‧透明導電氧化物
360‧‧‧前電極
365‧‧‧背電極
370‧‧‧背表面場區域
Claims (10)
- 一種異質接面太陽能電池，係至少包括：一含有電性摻雜之矽晶基板，於其照光側及背光側表面分別具有一矽晶基板表面區域及一背表面場區域，且該矽晶基板之照光側表面含有同質接面，而該矽晶基板原始摻雜濃度係小於1019cm-3；一層二氧化矽薄膜，係覆蓋在該矽晶基板照光側表面之矽晶基板表面區域上，其中該二氧化矽薄膜係將該矽晶基板浸泡於化學溶液所生成者，該化學溶液至少含有硝酸、硫酸、鹽酸、雙氧水、氨水以及磷酸之一，且其重量百分比濃度至少為5%，並在至少4℃以上溶液溫度中浸泡至少2分鐘之時間；一本質非晶矽薄膜，係覆蓋在該矽晶基板照光側表面之二氧化矽薄膜上，其電子能隙係大於該矽晶基板電子能隙，且該本質非晶矽薄膜含有電性摻雜形成異質接面，並與該矽晶基板表面區域及該二氧化矽薄膜構成一擴散區域；一透明介電質層，係覆蓋在該矽晶基板照光側表面之本質非晶矽薄膜上；一前電極，具線條形態，係覆蓋在該透明介電質層之上；一背電極，係覆蓋在該矽晶基板背光側表面之背表面場區域上；以及 其中，上述該本質非晶矽薄膜與該矽晶基板之異質接面，以及該矽晶基板照光側之同質接面係由一次電性摻雜擴散形成。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，該矽晶基板厚度係介於50μm~660μm之間。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，該矽晶基板之照光側係具有粗紋化表面。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，該透明介電質層，係自氮化矽、二氧化矽、銦錫氧化物、二氧化錫、氧化鋁鋅或氧化鋅中擇其一。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，含有電性摻雜之本質非晶矽薄膜之電性摻雜元素係與該矽晶基板表面區域之摻雜元素相同，而與該矽晶基板之摻雜元素不同。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，含有電性摻雜之本質非晶矽薄膜之電性摻雜元素係與該矽晶基板表面區域之摻雜元素相同，並與該矽晶基板原始之摻雜元素亦相同，且該本質非晶矽薄膜摻雜濃度係大於該矽晶基板原始之摻雜濃度。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，該二氧化矽薄膜厚度係不超過10nm。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，浸泡該矽晶基板生成該二氧化矽薄膜完畢後，係經過至少100℃溫度退火至少達3分鐘。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，該二氧化矽薄膜係在介於700℃~1200℃高溫通氧環境中所生成者。
- 依申請專利範圍第1項所述之異質接面太陽能電池，其中，該透明介電質層係在該背電極燒結完成後再鍍製所形成者。
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| TW100107236A TWI463682B (zh) | 2011-03-02 | 2011-03-02 | 異質接面太陽能電池 |
| US13/192,439 US20120222731A1 (en) | 2011-03-02 | 2011-07-27 | Heterojunction Solar Cell Having Amorphous Silicon Layer |
| CN201110213675.0A CN102655185B (zh) | 2011-03-02 | 2011-07-28 | 异质接面太阳能电池 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103107239B (zh) * | 2012-12-06 | 2016-08-31 | 杭州赛昂电力有限公司 | 异质结太阳能电池及其制作方法 |
| CN109599450A (zh) | 2013-04-03 | 2019-04-09 | Lg电子株式会社 | 太阳能电池 |
| DE102013219564A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer photovoltaischen Solarzelle mit einem Heteroübergang |
| US20150380581A1 (en) * | 2014-06-27 | 2015-12-31 | Michael C. Johnson | Passivation of light-receiving surfaces of solar cells with crystalline silicon |
| US9825191B2 (en) * | 2014-06-27 | 2017-11-21 | Sunpower Corporation | Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials |
| KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
| JP6219913B2 (ja) | 2014-11-28 | 2017-10-25 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
| KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| TWI572053B (zh) * | 2015-11-26 | 2017-02-21 | 財團法人金屬工業研究發展中心 | 異質接面結合本質矽薄膜太陽電池的製程方法 |
| JP6785427B2 (ja) * | 2016-02-01 | 2020-11-18 | パナソニックＩｐマネジメント株式会社 | 太陽電池素子および太陽電池モジュール |
| JP6631820B2 (ja) * | 2016-08-04 | 2020-01-15 | パナソニックＩｐマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
| TWI580058B (zh) * | 2016-10-26 | 2017-04-21 | 財團法人工業技術研究院 | 太陽能電池 |
| CN112768549A (zh) * | 2021-02-09 | 2021-05-07 | 通威太阳能（成都）有限公司 | 一种高光电转换效率的hjt电池及其制备方法 |
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| CN102655185B (zh) | 2016-04-27 |
| CN102655185A (zh) | 2012-09-05 |
| US20120222731A1 (en) | 2012-09-06 |
| TW201238061A (en) | 2012-09-16 |
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