JP6350979B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP6350979B2 JP6350979B2 JP2013182910A JP2013182910A JP6350979B2 JP 6350979 B2 JP6350979 B2 JP 6350979B2 JP 2013182910 A JP2013182910 A JP 2013182910A JP 2013182910 A JP2013182910 A JP 2013182910A JP 6350979 B2 JP6350979 B2 JP 6350979B2
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- amorphous silicon
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- Prior art date
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 115
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 62
- 239000001301 oxygen Substances 0.000 claims description 62
- 229910052760 oxygen Inorganic materials 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 14
- 239000010408 film Substances 0.000 description 62
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
2…結晶シリコン基板
3…第1の主面
4…第2の主面
5…非晶質シリコン膜
6…非晶質シリコン膜
7…透明電極
8…透明電極
10…第1の非晶質シリコン膜
11〜13…非晶質シリコン層
20…第2の非晶質シリコン膜
21〜23…非晶質シリコン層
31〜34…酸素高濃度層
Claims (3)
- 第1の主面を有する第1導電型の結晶シリコン基板と、
前記第1の主面側に設けられる真性の非晶質シリコン膜と、
前記真性の非晶質シリコン膜の上に設けられる第2導電型の第1の非晶質シリコン層と、
前記第1の非晶質シリコン層の上に設けられる酸素高濃度層と、
前記酸素高濃度層の上に設けられる前記第2導電型の第2の非晶質シリコン層と、を備え、
前記酸素高濃度層の酸素濃度は、前記第1の非晶質シリコン層および前記第2の非晶質シリコン層の酸素濃度より高く、
前記第1の非晶質シリコン層および前記第2の非晶質シリコン層のドーパント濃度は、1×1020cc−1以上である、太陽電池。 - 前記第1導電型と前記第2導電型とは同じ導電型である、請求項1に記載の太陽電池。
- 前記第1導電型と前記第2導電型とは異なる導電型である、請求項1に記載の太陽電池。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013182910A JP6350979B2 (ja) | 2013-09-04 | 2013-09-04 | 太陽電池 |
US14/449,198 US9917219B2 (en) | 2013-09-04 | 2014-08-01 | Solar cell |
EP14182077.9A EP2846363B1 (en) | 2013-09-04 | 2014-08-25 | Solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013182910A JP6350979B2 (ja) | 2013-09-04 | 2013-09-04 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015050411A JP2015050411A (ja) | 2015-03-16 |
JP6350979B2 true JP6350979B2 (ja) | 2018-07-04 |
Family
ID=51390049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013182910A Active JP6350979B2 (ja) | 2013-09-04 | 2013-09-04 | 太陽電池 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9917219B2 (ja) |
EP (1) | EP2846363B1 (ja) |
JP (1) | JP6350979B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11309441B2 (en) | 2013-04-03 | 2022-04-19 | Lg Electronics Inc. | Solar cell |
KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
EP3509112B1 (en) | 2014-11-28 | 2020-10-14 | LG Electronics Inc. | Solar cell and method for manufacturing the same |
KR102272433B1 (ko) * | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP2020061442A (ja) * | 2018-10-09 | 2020-04-16 | パナソニック株式会社 | 太陽電池セル |
US10840336B2 (en) * | 2018-11-16 | 2020-11-17 | Atomera Incorporated | Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods |
CN110416345A (zh) * | 2019-07-05 | 2019-11-05 | 江苏爱康能源研究院有限公司 | 双层非晶硅本征层的异质结太阳能电池结构及其制备方法 |
EP4010519A4 (en) | 2019-08-09 | 2023-09-13 | Leading Edge Equipment Technologies, Inc. | PRODUCING A RIBBON OR SLICE WITH REGIONS OF LOW OXYGEN CONCENTRATION |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2675754B2 (ja) * | 1994-07-08 | 1997-11-12 | 株式会社日立製作所 | 太陽電池 |
JP3490964B2 (ja) * | 2000-09-05 | 2004-01-26 | 三洋電機株式会社 | 光起電力装置 |
JP4070483B2 (ja) * | 2002-03-05 | 2008-04-02 | 三洋電機株式会社 | 光起電力装置並びにその製造方法 |
JP4169671B2 (ja) * | 2003-09-24 | 2008-10-22 | 三洋電機株式会社 | 光起電力素子の製造方法 |
US20080000522A1 (en) * | 2006-06-30 | 2008-01-03 | General Electric Company | Photovoltaic device which includes all-back-contact configuration; and related processes |
JP5526461B2 (ja) * | 2007-03-19 | 2014-06-18 | 三洋電機株式会社 | 光起電力装置 |
JP2009038180A (ja) * | 2007-08-01 | 2009-02-19 | National Institute Of Advanced Industrial & Technology | 太陽電池及びその作製方法 |
US7956283B2 (en) * | 2007-11-09 | 2011-06-07 | Sunpreme, Ltd. | Low-cost solar cells and methods for their production |
JP4940290B2 (ja) * | 2009-12-15 | 2012-05-30 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
US8686283B2 (en) * | 2010-05-04 | 2014-04-01 | Silevo, Inc. | Solar cell with oxide tunneling junctions |
DE102010044348A1 (de) * | 2010-09-03 | 2012-03-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle und Verfahren zu deren Herstellung |
US20120318336A1 (en) * | 2011-06-17 | 2012-12-20 | International Business Machines Corporation | Contact for silicon heterojunction solar cells |
JP5919559B2 (ja) * | 2011-06-30 | 2016-05-18 | パナソニックIpマネジメント株式会社 | 光起電力装置 |
JP5824681B2 (ja) * | 2011-06-30 | 2015-11-25 | パナソニックIpマネジメント株式会社 | 光起電力装置 |
KR20130035858A (ko) * | 2011-09-30 | 2013-04-09 | 한국철강 주식회사 | 박막 태양전지 및 그 제조방법 |
US9306106B2 (en) * | 2012-12-18 | 2016-04-05 | International Business Machines Corporation | Monolithic integration of heterojunction solar cells |
-
2013
- 2013-09-04 JP JP2013182910A patent/JP6350979B2/ja active Active
-
2014
- 2014-08-01 US US14/449,198 patent/US9917219B2/en active Active
- 2014-08-25 EP EP14182077.9A patent/EP2846363B1/en active Active
Also Published As
Publication number | Publication date |
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US9917219B2 (en) | 2018-03-13 |
EP2846363B1 (en) | 2019-04-10 |
EP2846363A3 (en) | 2015-06-24 |
JP2015050411A (ja) | 2015-03-16 |
US20150059839A1 (en) | 2015-03-05 |
EP2846363A2 (en) | 2015-03-11 |
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