JP5526461B2 - 光起電力装置 - Google Patents
光起電力装置 Download PDFInfo
- Publication number
- JP5526461B2 JP5526461B2 JP2007070014A JP2007070014A JP5526461B2 JP 5526461 B2 JP5526461 B2 JP 5526461B2 JP 2007070014 A JP2007070014 A JP 2007070014A JP 2007070014 A JP2007070014 A JP 2007070014A JP 5526461 B2 JP5526461 B2 JP 5526461B2
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- JP
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- Prior art keywords
- silicon layer
- amorphous silicon
- single crystal
- photovoltaic device
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 155
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 87
- 229910052760 oxygen Inorganic materials 0.000 claims description 87
- 239000001301 oxygen Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 60
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 description 21
- 239000000969 carrier Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 150000002500 ions Chemical group 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001417 caesium ion Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 238000010913 antigen-directed enzyme pro-drug therapy Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
2a i型非晶質シリコン層(第2非結晶シリコン層)
2b p型非晶質シリコン層(第1非結晶シリコン層)
2c 第1部分
2d 第2部分
2e 界面
2f 第3部分
2g 界面
Claims (5)
- 単結晶シリコン基板を用意し、
前記単結晶シリコン基板の一面上にシラン及びCO2を含む第1使用ガスを導入して、前記単結晶シリコン基板から2〜3原子層分の領域である界面近傍の極めて近傍の領域に10 19 cm−3 よりも小さい極小値を有するとともに、該極小値の部分から離れるにつれて増加し、10 20 cm −3 よりも大きい最大値を有する酸素濃度を有した第1の非晶質シリコン層を形成する工程と、
前記第1の非晶質シリコン層上にシラン及びボロンを含む第2使用ガスを導入して第2の非晶質シリコン層を形成する工程と、
前記単結晶シリコン基板の他面上にシランを含む第3使用ガスを導入して第3の非晶質シリコン層を形成する工程と、
前記他方面上に形成された前記第3の非晶質シリコン層上にシラン及びリンを含む第4使用ガスを導入して第4の非晶質シリコン層を形成する工程と、を含み、
前記最大値は、前記第1の非晶質シリコン層の該第1の非晶質シリコン層と前記第2の非晶質シリコン層の界面近傍にある光起電力装置の製造方法。 - 請求項1記載の光起電力装置の製造方法であって、
前記第1使用ガスを導入する前に前記単結晶シリコン基板の一面を水素処理する工程を有する光起電力装置の製造方法。 - 請求項2記載の光起電力装置の製造方法であって、
前記水素処理する工程の前に前記単結晶シリコン基板を加熱する工程を有する光起電力装置の製造方法。 - 請求項1〜3のいずれか1項に記載の光起電力装置の製造方法であって、
前記第3使用ガスは、CO2を含まない光起電力装置の製造方法。 - 請求項1〜4のいずれか1項に記載の光起電力装置の製造方法であって、
前記CO2の流量を連続的に変化させながら前記第1使用ガスを導入する光起電力装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007070014A JP5526461B2 (ja) | 2007-03-19 | 2007-03-19 | 光起電力装置 |
US12/045,247 US7893351B2 (en) | 2007-03-19 | 2008-03-10 | Photovoltaic device and manufacturing method thereof |
US12/987,245 US8349643B2 (en) | 2007-03-19 | 2011-01-10 | Photovoltaic device and manufacturing method thereof |
US13/683,300 US20130084675A1 (en) | 2007-03-19 | 2012-11-21 | Photovoltaic device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007070014A JP5526461B2 (ja) | 2007-03-19 | 2007-03-19 | 光起電力装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008235400A JP2008235400A (ja) | 2008-10-02 |
JP5526461B2 true JP5526461B2 (ja) | 2014-06-18 |
Family
ID=39773510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007070014A Active JP5526461B2 (ja) | 2007-03-19 | 2007-03-19 | 光起電力装置 |
Country Status (2)
Country | Link |
---|---|
US (3) | US7893351B2 (ja) |
JP (1) | JP5526461B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100224228A1 (en) * | 2009-03-03 | 2010-09-09 | Jinah Kim | Solar cell and method for manufacturing the same, and solar cell module |
US9130074B2 (en) * | 2009-04-21 | 2015-09-08 | Tetrasun, Inc. | High-efficiency solar cell structures and methods of manufacture |
CN101958361A (zh) * | 2009-07-13 | 2011-01-26 | 无锡尚德太阳能电力有限公司 | 透光薄膜太阳电池组件刻蚀方法 |
US20120319157A1 (en) * | 2011-06-14 | 2012-12-20 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP5919559B2 (ja) * | 2011-06-30 | 2016-05-18 | パナソニックIpマネジメント株式会社 | 光起電力装置 |
JP5824681B2 (ja) | 2011-06-30 | 2015-11-25 | パナソニックIpマネジメント株式会社 | 光起電力装置 |
JP6025106B2 (ja) * | 2012-03-02 | 2016-11-16 | パナソニックIpマネジメント株式会社 | 光起電力装置 |
CN105103307B (zh) * | 2013-03-19 | 2017-05-24 | 长州产业株式会社 | 光发电装置 |
JP6350979B2 (ja) * | 2013-09-04 | 2018-07-04 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP6206687B2 (ja) * | 2016-03-01 | 2017-10-04 | パナソニックIpマネジメント株式会社 | 光起電力装置及びその製造方法 |
JP2016219854A (ja) * | 2016-09-30 | 2016-12-22 | パナソニックIpマネジメント株式会社 | 光起電力装置及び光電変換装置の製造方法 |
JP2020061442A (ja) * | 2018-10-09 | 2020-04-16 | パナソニック株式会社 | 太陽電池セル |
MX2022001458A (es) | 2019-08-09 | 2022-06-08 | Leading Edge Equipment Tech Inc | Produccion de una cinta u oblea con regiones de baja concentracion de oxigeno. |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
US5635408A (en) * | 1994-04-28 | 1997-06-03 | Canon Kabushiki Kaisha | Method of producing a semiconductor device |
JP3397928B2 (ja) * | 1995-03-08 | 2003-04-21 | 三洋電機株式会社 | 半導体デバイス |
US5716480A (en) * | 1995-07-13 | 1998-02-10 | Canon Kabushiki Kaisha | Photovoltaic device and method of manufacturing the same |
US6331457B1 (en) * | 1997-01-24 | 2001-12-18 | Semiconductor Energy Laboratory., Ltd. Co. | Method for manufacturing a semiconductor thin film |
US6346732B1 (en) * | 1999-05-14 | 2002-02-12 | Kabushiki Kaisha Toshiba | Semiconductor device with oxide mediated epitaxial layer |
JP4036616B2 (ja) * | 2000-01-31 | 2008-01-23 | 三洋電機株式会社 | 太陽電池モジュール |
JP4070483B2 (ja) * | 2002-03-05 | 2008-04-02 | 三洋電機株式会社 | 光起電力装置並びにその製造方法 |
-
2007
- 2007-03-19 JP JP2007070014A patent/JP5526461B2/ja active Active
-
2008
- 2008-03-10 US US12/045,247 patent/US7893351B2/en active Active
-
2011
- 2011-01-10 US US12/987,245 patent/US8349643B2/en active Active
-
2012
- 2012-11-21 US US13/683,300 patent/US20130084675A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2008235400A (ja) | 2008-10-02 |
US8349643B2 (en) | 2013-01-08 |
US20110104849A1 (en) | 2011-05-05 |
US20080230121A1 (en) | 2008-09-25 |
US20130084675A1 (en) | 2013-04-04 |
US7893351B2 (en) | 2011-02-22 |
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