JP2016103642A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP2016103642A JP2016103642A JP2015231421A JP2015231421A JP2016103642A JP 2016103642 A JP2016103642 A JP 2016103642A JP 2015231421 A JP2015231421 A JP 2015231421A JP 2015231421 A JP2015231421 A JP 2015231421A JP 2016103642 A JP2016103642 A JP 2016103642A
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- Prior art keywords
- type semiconductor
- electrode
- solar cell
- semiconductor substrate
- passivation film
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- 238000000034 method Methods 0.000 title claims abstract description 130
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- 239000004065 semiconductor Substances 0.000 claims abstract description 698
- 239000000758 substrate Substances 0.000 claims abstract description 267
- 238000002161 passivation Methods 0.000 claims abstract description 186
- 239000012535 impurity Substances 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 305
- 239000013078 crystal Substances 0.000 claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 82
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- 230000015572 biosynthetic process Effects 0.000 claims description 54
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- 239000000463 material Substances 0.000 claims description 51
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
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- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 238000005086 pumping Methods 0.000 description 1
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- 238000009751 slip forming Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H01L31/02—Details
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
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- 半導体基板と、
前記半導体基板の第1面の上のトンネル層と、
前記トンネル層の上の、第1導電型の不純物を含有する第1導電型半導体部と、
前記半導体基板の前記第1面と反対面である第2面の上の、前記第1導電型と反対である第2導電型の不純物を含有する第2導電型半導体部と、
前記第1導電型半導体部の上の第1パッシベーション膜と、
前記第1パッシベーション膜の上に形成され、前記第1パッシベーション膜に形成された開口部を通じて前記第1導電型半導体部に接続される第1電極と、
前記第2導電型半導体部の上の第2パッシベーション膜と、
前記第2パッシベーション膜の上に形成され、前記第2パッシベーション膜に形成された開口部を通じて前記第2導電型半導体部に接続される第2電極と、を含む、太陽電池。 - 前記第1電極は互いに離れて第1方向に並行に延びた複数の第1フィンガー電極を含み、
前記第2電極は互いに離れて第1方向に並行に延びた複数の第2フィンガー電極を含む、請求項1に記載の太陽電池。 - 前記第1電極は前記複数の第1フィンガー電極を接続する第1バスバーをさらに含み、
前記第2電極は前記複数の第2フィンガー電極を接続する第2バスバーをさらに含む、請求項2に記載の太陽電池。 - 前記第1導電型半導体部は多結晶シリコン材質を含み、前記第2導電型半導体部は単結晶シリコン材質を含む、請求項1に記載の太陽電池。
- 前記第1導電型半導体部と前記第2導電型半導体部との間の接触を防止するアイソレーション部をさらに含み、
前記アイソレーション部は、前記半導体基板の第1面、側面、または第2面のうち、少なくとも1つに形成される、請求項1に記載の太陽電池。 - 前記アイソレーション部は前記トンネル層及び前記第1導電型半導体部を除外し、前記半導体基板の一面のうちの縁部分にあり、
前記第1パッシベーション膜は前記半導体基板の第1面と前記アイソレーション部をともに覆う、請求項5に記載の太陽電池。 - 前記アイソレーション部の幅が1nm乃至1mmである、請求項6に記載の太陽電池。
- 前記第1導電型半導体部の縁領域の厚さは前記アイソレーション部に近づくほど徐々に減少する、請求項6に記載の太陽電池。
- 前記第1パッシベーション膜は前記半導体基板の側面まで延びる側面部を含む、請求項1に記載の太陽電池。
- 前記第2パッシベーション膜は前記半導体基板の側面の上に形成される側面部を含み、
前記半導体基板の側面の上の前記第1パッシベーション膜の側面部が前記第2パッシベーション膜の側面部の上にある、請求項9に記載の太陽電池。 - 前記第1導電型半導体部と前記第1電極とが互いに接触する第1境界面と、前記第1導電型半導体部と前記第1パッシベーション膜とが互いに接触する第2境界面とを更に含み、
前記第1境界面は前記第2境界面より前記半導体基板により近い、請求項1に記載の太陽電池。 - 前記第1電極から抽出された複数の金属結晶を更に含み、
前記複数の金属結晶は、前記第1導電型半導体部に属する、前記第1電極が形成される電極形成領域にある、請求項1に記載の太陽電池。 - 前記複数の金属結晶は、前記第1導電型半導体部に属する、前記第1電極が形成されない非形成領域にはない、請求項12に記載の太陽電池。
- 前記複数の金属結晶は前記トンネル層の内にはない、請求項12に記載の太陽電池。
- 前記複数の金属結晶は前記第1電極と直接接触するか、または前記第1電極と離隔する、請求項12に記載の太陽電池。
- 前記複数の第1フィンガー電極及び前記第1バスバーの全ては、前記第1パッシベーション膜を貫通して前記第1導電型半導体部に接続される、請求項3に記載の太陽電池。
- 前記複数の第1フィンガー電極及び前記第1バスバーの全ては、単層(single layer)または二層(double layer)構造を有する、請求項16に記載の太陽電池。
- 前記複数の第1フィンガー電極は単層(single layer)構造を有し、前記第1バスバーは二層(double layer)構造を有する、請求項16に記載の太陽電池。
- 前記第1導電型半導体部に属し、前記複数の第1フィンガー電極が形成された領域内及び前記第1導電型半導体部に属し、前記第1バスバーが形成された領域内の複数の金属結晶を更に含む、請求項16に記載の太陽電池。
- 前記複数の第1フィンガー電極は、前記第1パッシベーション膜を貫通して前記第1導電型半導体部に接続され、
前記第1バスバーは、前記第1パッシベーション膜を貫通しないように、前記第1パッシベーション膜の後面の上に形成される、請求項3に記載の太陽電池。 - 複数の金属結晶を更に含み、
前記複数の金属結晶は、前記第1導電型半導体部に属する、前記第1フィンガー電極が形成される領域内にあり、
前記複数の金属結晶は、前記第1導電型半導体部に属する、前記第1バスバーが形成される領域内にはない、請求項20に記載の太陽電池。 - 前記複数の第1フィンガー電極と前記第1バスバーとは異なる組成を有する、請求項20に記載の太陽電池。
- 前記複数の第1フィンガー電極に含まれる単位体積当たりガラスフリットの含有量は、前記第1バスバーに含まれる単位体積当たりガラスフリットの含有量より多い、請求項20に記載の太陽電池。
- 前記複数の第1フィンガー電極に含まれる単位体積当たりガラスフリットの含有量は、前記第1バスバーに含まれる単位体積当たりガラスフリットの含有量と同一である、請求項20に記載の太陽電池。
- 前記複数の第1フィンガー電極に含まれる単位体積当たり金属物質の含有量は、前記第1バスバーに含まれる単位体積当たり金属物質の含有量より多い、請求項20に記載の太陽電池。
- 半導体基板の一面の上にトンネル層を形成するトンネル層形成工程と、
前記半導体基板の一面の上に形成された前記トンネル層の上に真性半導体層を形成する真性半導体層形成工程と、
前記半導体基板の一面の上に形成された前記真性半導体層に第1導電型の不純物をドーピングして第1導電型半導体部を形成する第1導電型半導体部形成工程と、
前記半導体基板の反対面に第2導電型の不純物をドーピングして第2導電型半導体部を形成する第2導電型半導体部形成工程と、
前記第1導電型半導体部の上に第1パッシベーション膜を形成する第1パッシベーション膜形成工程と、
前記第1導電型半導体部に接続される第1電極及び前記第2導電型半導体部に接続される第2電極を形成する電極形成工程と、を含む、太陽電池の製造方法。 - 前記第1パッシベーション膜形成工程の後、前記第1パッシベーション膜に開口部を形成する工程をさらに含む、請求項26に記載の太陽電池の製造方法。
- 前記第1パッシベーション膜に開口部を形成する工程は、前記電極形成工程の熱処理により遂行される、請求項27に記載の太陽電池の製造方法。
- 前記電極形成工程は前記第1電極を形成する第1電極形成工程を含み、
前記第1電極形成工程は、第1フィンガー電極を形成するための第1フィンガー電極用ペーストと第1バスバーを形成するための第1バスバー用ペーストを前記第1パッシベーション膜の上に印刷すること、及び前記ペーストを熱処理することを含む、請求項28に記載の太陽電池の製造方法。 - 前記第1電極形成工程において、熱処理最高温度は795℃乃至870℃である、請求項29に記載の太陽電池の製造方法。
- 前記第1電極形成工程において、前記第1フィンガー電極用ペースト及び前記第1バスバー用ペーストを1回の工程により印刷する、請求項29に記載の太陽電池の製造方法。
- 前記第1フィンガー電極用ペーストに含まれる材質と前記第1バスバー用ペーストに含まれる材質とは同一である、請求項31に記載の太陽電池の製造方法。
- 前記第1電極形成工程において、前記第1フィンガー電極用ペーストと前記第1バスバー用ペーストを別の印刷工程により遂行する、請求項29に記載の太陽電池の製造方法。
- 前記第1フィンガー電極用ペーストに含まれる材質と前記第1バスバー用ペーストに含まれる材質とは異なる、請求項33に記載の太陽電池の製造方法。
- 前記トンネル層形成工程は、前記半導体基板の一面及び反対面の上に前記トンネル層を形成することをさらに含み、
前記真性半導体層形成工程は、前記半導体基板の一面及び反対面の上に形成された前記トンネル層の上に前記真性半導体層を形成することをさらに含み、
前記第1導電型半導体部形成工程の後で、前記第2導電型半導体部形成工程の前に、少なくとも前記半導体基板の反対面に位置した前記トンネル層及び前記真性半導体層または前記第1導電型半導体部を除去する除去工程をさらに含む、請求項26に記載の太陽電池の製造方法。 - 前記除去工程は、前記半導体基板の一側に位置した前記トンネル層及び前記第1導電型半導体部の縁部分を除去してアイソレーション部を形成することを含み、
前記第1パッシベーション膜は前記アイソレーション部とともに前記半導体基板の一面の上を覆う、請求項35に記載の太陽電池の製造方法。 - 前記除去工程は、
前記半導体基板の他側で前記第1導電型半導体部の上に前記半導体基板より小さい領域を有するマスク層を形成する工程と、
前記マスク層が形成されない部分に位置した前記第1導電型半導体部及び前記トンネル層をエッチングする工程と、
前記マスク層を除去する工程と、をさらに含む、請求項36に記載の太陽電池の製造方法。 - 前記第2導電型半導体部を形成する工程と前記第1パッシベーション膜を形成する工程との間に、前記第2導電型半導体部を覆う第2パッシベーション膜を形成する工程をさらに含み、
前記第2パッシベーション膜は前記半導体基板の側面の上に位置し、前記第1パッシベーション膜は前記第2パッシベーション膜の上に位置する、請求項26に記載の太陽電池の製造方法。
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Also Published As
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EP3509112A1 (en) | 2019-07-10 |
JP2017208569A (ja) | 2017-11-24 |
EP3026713B1 (en) | 2019-03-27 |
US20190319140A1 (en) | 2019-10-17 |
JP6526119B2 (ja) | 2019-06-05 |
US20230207712A1 (en) | 2023-06-29 |
EP3026713A1 (en) | 2016-06-01 |
US9722104B2 (en) | 2017-08-01 |
US20160155866A1 (en) | 2016-06-02 |
CN109037359A (zh) | 2018-12-18 |
CN105655427B (zh) | 2018-07-24 |
JP6219913B2 (ja) | 2017-10-25 |
US11133426B2 (en) | 2021-09-28 |
EP3509112B1 (en) | 2020-10-14 |
US10014419B2 (en) | 2018-07-03 |
US20180277694A1 (en) | 2018-09-27 |
US20190326456A1 (en) | 2019-10-24 |
JP6795653B2 (ja) | 2020-12-02 |
US11239379B2 (en) | 2022-02-01 |
CN105655427A (zh) | 2016-06-08 |
US11616153B2 (en) | 2023-03-28 |
US20190148573A1 (en) | 2019-05-16 |
JP2019117963A (ja) | 2019-07-18 |
CN109037359B (zh) | 2022-06-03 |
US10230009B2 (en) | 2019-03-12 |
US20170309761A1 (en) | 2017-10-26 |
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