JP2018142703A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000002019 doping agent Substances 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 27
- 238000001312 dry etching Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 50
- 238000001020 plasma etching Methods 0.000 claims description 50
- 229910018503 SF6 Inorganic materials 0.000 claims description 44
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 44
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 44
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 41
- 229910001882 dioxygen Inorganic materials 0.000 claims description 40
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 13
- 238000011065 in-situ storage Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 7
- 238000002161 passivation Methods 0.000 description 38
- 239000013078 crystal Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006690 co-activation Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Abstract
Description
20 第1導電型領域
30 第2導電型領域
22、32 パッシベーション膜
34 反射防止膜
42、44 電極
50 制御パッシベーション層
100 太陽電池
110 半導体基板
112a 凹凸
112b 微細凹凸
Claims (15)
- 半導体基板の一面及び前記一面と対向する他面上に第1導電型ドーパントを含む第1導電型領域を形成する段階と、
前記半導体基板の他面に配置された前記第1導電型領域を乾式食刻で除去する段階と、
前記半導体基板の他面に第2導電型ドーパントを含む第2導電型領域を形成する段階とを含み、
前記第1導電型領域を除去する段階は、反応性イオン食刻(reactive ion etching、RIE)によって行い、六フッ化硫黄ガス及び酸素ガスを使用する、太陽電池製造方法。 - 前記酸素ガスに対する前記六フッ化硫黄ガスの体積比が3〜5である、請求項1に記載の太陽電池製造方法。
- 前記反応性イオン食刻は25kw〜30kwのプラズマを使う、請求項1に記載の太陽電池製造方法。
- 前記第1導電型領域を食刻する段階と前記第2導電型領域を形成する段階の間に反応性イオン食刻(reactive ion etching、RIE)によって微細凹凸を形成する段階をさらに含む、請求項1に記載の太陽電池製造方法。
- 前記微細凹凸を形成する段階は、六フッ化硫黄ガス、酸素ガス及び塩素ガスを使う、請求項4に記載の太陽電池製造方法。
- 前記酸素ガスに対する前記六フッ化硫黄ガスの体積比が1〜2である、請求項5に記載の太陽電池製造方法。
- 前記酸素ガスに対する前記塩素ガスの体積比が0.2〜1である、請求項5に記載の太陽電池製造方法。
- 前記第1導電型領域を除去するときに使う酸素ガスに対する、前記微細凹凸を形成するときに使う酸素ガスの体積比が1.5〜5である、請求項5に記載の太陽電池製造方法。
- 前記微細凹凸を形成する段階は、前記第1導電型領域を食刻する段階と圧力が同一又はそれより低い、請求項4に記載の太陽電池製造方法。
- 前記第1導電型領域を形成する前、前記半導体基板の他面に凹凸を形成するが、一面には形成しない、請求項1に記載の太陽電池製造方法。
- 前記半導体基板の他面に凹凸を形成する段階は湿式食刻で行い、前記微細凹凸は前記凹凸上に形成する、請求項10に記載の太陽電池製造方法。
- 前記第1導電型領域を食刻段階と前記微細凹凸を形成する段階はインサイチュ(in−situ)工程で行う、請求項4に記載の太陽電池製造方法。
- 半導体基板と、
前記半導体基板の一面に形成された第2導電型領域と、
前記半導体基板の一面に対向する他面に形成された第1導電型領域とを含み、
前記半導体基板の他面及び側面が微細凹凸を含み、
前記半導体基板の他面に形成された微細凹凸のサイズと前記半導体基板の側面に形成された微細凹凸のサイズが違う、太陽電池。 - 前記半導体基板の他面に形成された微細凹凸のサイズが前記半導体基板の側面に形成された微細凹凸のサイズより大きい、請求項13に記載の太陽電池。
- 前記半導体基板の他面に形成された微細凹凸のサイズは100nm〜300nmであり、前記半導体基板の側面に形成された微細凹凸のサイズは50nm〜100nmである、請求項13に記載の太陽電池。
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