JP7248856B1 - 太陽電池および太陽電池の製造方法、光起電力モジュール - Google Patents
太陽電池および太陽電池の製造方法、光起電力モジュール Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 207
- 238000009792 diffusion process Methods 0.000 claims abstract description 167
- 238000000034 method Methods 0.000 claims abstract description 38
- 150000002500 ions Chemical class 0.000 claims description 112
- 239000000463 material Substances 0.000 claims description 29
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- 238000006243 chemical reaction Methods 0.000 abstract description 13
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- 238000002161 passivation Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 17
- 230000001965 increasing effect Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- -1 phosphorous ions Chemical class 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
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- 230000000903 blocking effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 238000007254 oxidation reaction Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006124 polyolefin elastomer Polymers 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910001451 bismuth ion Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (18)
- 基板と、
前記基板の第1表面に位置し、前記基板の第1表面から離れる方向に順次設けられるトンネル誘電体層及びドーピング導電層と、離隔して配置された複数の第1電極と、輸送層と、拡散領域とを備え、
前記ドーピング導電層は少なくとも離隔して配置される複数の本体部を含み、
前記第1電極は第1方向に沿って延在し、前記第1電極は、前記本体部の前記基板から離れる側に設置され、かつ前記本体部と電気的に接続されており、
前記輸送層は、隣接する前記本体部の間に位置し、かつ前記本体部の側面に接触し、
一部の前記拡散領域が前記輸送層に位置し、かつ、前記拡散領域は前記トンネル誘電体層及び前記基板にも延在しており、前記拡散領域のドーピングイオン濃度が前記基板のドーピングイオン濃度よりも大きく、
前記拡散領域は、前記基板に位置する第1領域と、前記トンネル誘電体層に位置する第2領域と、前記輸送層に位置する第3領域と、を含み、前記第1領域のドーピングイオン濃度は前記第2領域のドーピングイオン濃度より小さく、前記第2領域のドーピングイオン濃度は前記第3領域のドーピングイオン濃度より小さい、
ことを特徴とする太陽電池。 - 前記第1領域のドーピングイオン濃度と前記基板のドーピングイオン濃度との比は、1×103~2×105である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1表面に垂直な方向において、前記第1領域の拡散領域の厚さと前記基板の厚さとの比は、0.05~2である、
ことを特徴とする請求項2に記載の太陽電池。 - 前記第1領域の拡散領域の厚さは、10nm~200nmである、
ことを特徴とする請求項3に記載の太陽電池。 - 第2方向において、前記第1領域の拡散領域の幅は20μm~800μmであり、前記第2方向は前記本体部の配置方向である、
ことを特徴とする請求項3に記載の太陽電池。 - 前記拡散領域の前記輸送層表面における投影形状は、矩形、円形、または類円形のうちの少なくとも1種である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記拡散領域の数は複数である、
ことを特徴とする請求項6に記載の太陽電池。 - 前記拡散領域のドーピングイオンのタイプは前記基板のドーピングイオンのタイプと同じであり、または、前記拡散領域のドーピングイオンのタイプは前記基板のドーピングイオンのタイプとは異なる、
ことを特徴とする請求項1に記載の太陽電池。 - 前記基板のドーピングイオンのタイプはN型である、
ことを特徴とする請求項8に記載の太陽電池。 - 前記輸送層の材料は前記ドーピング導電層の材料と同じである、
ことを特徴とする請求項8に記載の太陽電池。 - 隣接する前記第1電極の間に、前記輸送層の数は複数であり、複数の前記輸送層は前記第1方向に沿って離隔して配置される、
ことを特徴とする請求項1に記載の太陽電池。 - 前記輸送層の数は複数であり、複数の前記輸送層が離隔して配置され、隣接する前記輸送層の間に少なくとも1本の前記第1電極がある、
ことを特徴とする請求項11に記載の太陽電池。 - 前記ドーピング導電層は、離隔して配置された複数の前記本体部のみを含み、隣接する前記本体部の間に前記トンネル誘電体層の上面が露出する、
ことを特徴とする請求項1に記載の太陽電池。 - 前記ドーピング導電層は、本体部と接続部を含み、前記接続部は隣接する前記本体部の間に接続され、前記接続部の前記第1表面から離れた上面は、前記本体部の前記第1表面から離れた上面より高くない、
ことを特徴とする請求項1に記載の太陽電池。 - 第2電極をさらに含み、前記第2電極は、その延伸方向が前記第1方向に対して垂直であり、かつ離隔して配置される複数の前記第1電極と電気的に接続される、
ことを特徴とする請求項1に記載の太陽電池。 - 請求項1~15のいずれか1項に記載の太陽電池を複数連結したセルストリングと、
前記セルストリングの表面を覆うための封止層と、
前記封止層の前記セルストリングから離れた表面を覆うためのカバープレートと、を含む、
ことを特徴とする光起電力モジュール。 - 基板を提供することと、
前記基板の第1表面かつ前記基板の第1表面から離れる方向に順次配置されたトンネル誘電体層及びドーピング導電層を形成することであって、前記ドーピング導電層は、少なくとも離隔して配置された複数の本体部を含むことと、
隣接する前記本体部の間に輸送層を形成することであって、前記輸送層は前記本体部の側面に接触することと、
拡散領域を形成することであって、一部の前記拡散領域が前記輸送層に位置し、かつ前記拡散領域が前記トンネル誘電体層および前記基板の中にも延びており、前記拡散領域のドーピングイオン濃度は前記基板のドーピングイオン濃度より大きいことと、
前記本体部の前記基板から離れた側に、離隔して配置された第1電極を複数形成することであって、前記第1電極は第1方向に沿って延在し、かつ前記本体部に電気的に接続されることと、を含み、
前記輸送層のドーピングイオンのタイプは前記拡散領域のドーピングイオンのタイプと同じであり、前記拡散領域を形成する方法は、
レーザープロセスを採用してプリセット領域の前記輸送層を処理し、前記プリセット領域の輸送層の上面のドーピングイオンを前記輸送層、前記トンネル誘電体層及び前記基板に拡散させ、前記拡散領域を形成し、前記拡散領域のドーピングイオン濃度を前記輸送層のドーピングイオン濃度より大きくすることを含む、
ことを特徴とする太陽電池の製造方法。 - 前記レーザープロセスに用いられるレーザー波長は220nm~550nmであり、レーザーパワーは10W~50Wであり、レーザー周波数は200kHz~2000kHzであり、レーザーパルス幅は1ps~10000psである、
ことを特徴とする請求項17に記載の太陽電池の製造方法。
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