JP2022081366A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2022081366A JP2022081366A JP2020203914A JP2020203914A JP2022081366A JP 2022081366 A JP2022081366 A JP 2022081366A JP 2020203914 A JP2020203914 A JP 2020203914A JP 2020203914 A JP2020203914 A JP 2020203914A JP 2022081366 A JP2022081366 A JP 2022081366A
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- 238000002161 passivation Methods 0.000 claims abstract description 232
- 239000000463 material Substances 0.000 claims abstract description 45
- 230000003014 reinforcing effect Effects 0.000 claims description 134
- 239000000969 carrier Substances 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 abstract description 25
- 230000002787 reinforcement Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 323
- 210000004027 cell Anatomy 0.000 description 56
- 150000002500 ions Chemical class 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000004904 shortening Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- -1 phosphorus ion Chemical class 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910004605 CdOx Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006854 SnOx Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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Abstract
Description
上記技術方案において、導電補強層の材料の抵抗率がフィールドパッシベーション層の材料の抵抗率よりも小さいので、導電補強層は、第1界面パッシベーション層におけるキャリアが電極へ流れる経路として、キャリアがより速い輸送レート及びより小さい輸送損失で電極へ流れることを可能にし、さらに太陽電池の変換効率を向上することができる。
Claims (10)
- ベース、前記ベースの下面を覆う界面パッシベーション層、及び前記界面パッシベーション層における前記ベースから離れる側に位置する電極と、フィールドパッシベーション層と、導電補強層と、を備え、
前記界面パッシベーション層は、隣接する前記電極の間の界面パッシベーション層に対応する第1界面パッシベーション層と、前記ベースと少なくとも一つの電極との間の界面パッシベーション層に対応する第2界面パッシベーション層とを含み、
前記フィールドパッシベーション層は、少なくとも一部が前記界面パッシベーション層と前記電極との間に位置しており、
前記導電補強層は、前記第1界面パッシベーション層におけるキャリアが前記電極へ流れるように、少なくとも一部が前記第1界面パッシベーション層における前記ベースから離れる側に位置し、前記導電補強層の材料の抵抗率は、前記フィールドパッシベーション層の材料の抵抗率よりも小さく、前記導電補強層の材料の抵抗率は、0.001Ω・cm未満である
ことを特徴とする太陽電池。 - 前記導電補強層は、少なくとも、前記第1界面パッシベーション層における前記ベースから離れる表面の一部を覆い、
前記フィールドパッシベーション層は、前記導電補強層における前記ベースから離れる表面を覆っている
ことを特徴とする請求項1に記載の太陽電池。 - 前記フィールドパッシベーション層は、前記第2界面パッシベーション層における前記ベースから離れる表面を覆い、
前記導電補強層の少なくとも一部は、隣接する前記電極の間に位置し、前記導電補強層は前記電極の側壁と接触している
ことを特徴とする請求項2に記載の太陽電池。 - 前記フィールドパッシベーション層は、前記界面パッシベーション層における前記ベースから離れる表面を覆い、そのうち、隣接する前記電極の間に位置する前記フィールドパッシベーション層は、第1フィールドパッシベーション層であり、前記導電補強層は少なくとも、前記第1フィールドパッシベーション層における前記ベースから離れる表面の一部を覆っている
ことを特徴とする請求項1に記載の太陽電池。 - 前記電極は、前記導電補強層を貫通して前記フィールドパッシベーション層と接触している
ことを特徴とする請求項4に記載の太陽電池。 - 前記第1フィールドパッシベーション層には、凹溝が設けられており、
前記導電補強層は、前記凹溝を満たすように充填されている
ことを特徴とする請求項4に記載の太陽電池。 - 前記導電補強層は、順に積層された第1補強層と第2補強層を有し、
前記第1補強層は、前記凹溝の表面を覆い、
前記第1補強層と前記フィールドパッシベーション層との接触抵抗は、前記第2補強層と前記フィールドパッシベーション層との接触抵抗よりも小さく、
前記第2補強層の抵抗率は、前記第1補強層の抵抗率よりも小さい
ことを特徴とする請求項6に記載の太陽電池。 - 前記第1界面パッシベーション層の一部の表面が前記フィールドパッシベーション層に露出されており、
前記導電補強層は、前記第1界面パッシベーション層の露出された一部の表面と接触しており、
前記導電補強層の材料の抵抗率は、前記界面パッシベーション層の材料の抵抗率よりも小さい
ことを特徴とする請求項6に記載の太陽電池。 - 前記第1界面パッシベーション層は、前記フィールドパッシベーション層によって露出された複数の不連続な局部的表面を有し、
前記導電補強層は、前記複数の不連続な局部的表面と接触している
ことを特徴とする請求項7に記載の太陽電池。 - 前記導電補強層は、フィールドパッシベーション能力を有する
ことを特徴とする請求項8または9に記載の太陽電池。
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CN202011308762.X | 2020-11-19 | ||
CN202011308762.XA CN112466962B (zh) | 2020-11-19 | 2020-11-19 | 太阳能电池 |
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JP6890371B1 JP6890371B1 (ja) | 2021-06-18 |
JP2022081366A true JP2022081366A (ja) | 2022-05-31 |
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US (2) | US11189739B1 (ja) |
EP (1) | EP4002493B1 (ja) |
JP (1) | JP6890371B1 (ja) |
CN (1) | CN112466962B (ja) |
AU (1) | AU2020281074B1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7248856B1 (ja) | 2022-08-05 | 2023-03-29 | ジョジアン ジンコ ソーラー カンパニー リミテッド | 太陽電池および太陽電池の製造方法、光起電力モジュール |
US11791426B1 (en) | 2022-09-08 | 2023-10-17 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell and photovoltaic module |
JP7381687B1 (ja) * | 2022-09-08 | 2023-11-15 | ジョジアン ジンコ ソーラー カンパニー リミテッド | 太陽電池および光起電力モジュール |
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US11990555B2 (en) | 2024-05-21 |
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US20220158009A1 (en) | 2022-05-19 |
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