CN116722055A - 一种太阳能电池及光伏组件 - Google Patents

一种太阳能电池及光伏组件 Download PDF

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CN116722055A
CN116722055A CN202210745275.2A CN202210745275A CN116722055A CN 116722055 A CN116722055 A CN 116722055A CN 202210745275 A CN202210745275 A CN 202210745275A CN 116722055 A CN116722055 A CN 116722055A
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conductive connection
solar cell
layer
doped
substrate
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张彼克
金井升
张昕宇
曹静宇
程海燕
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Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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Priority to CN202210745275.2A priority Critical patent/CN116722055A/zh
Priority to AU2023200098A priority patent/AU2023200098B2/en
Priority to US18/163,871 priority patent/US20230420580A1/en
Priority to EP23154994.0A priority patent/EP4300599A1/en
Priority to JP2023018906A priority patent/JP2024003746A/ja
Priority to DE202023101198.5U priority patent/DE202023101198U1/de
Priority to NL2034431A priority patent/NL2034431A/en
Publication of CN116722055A publication Critical patent/CN116722055A/zh
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Abstract

本申请实施例涉及光伏领域，提供一种太阳能电池及光伏组件，其中太阳能电池包括：基底；隧穿介质层，隧穿介质层位于基底的表面；掺杂导电层，掺杂导电层位于隧穿介质层的表面，掺杂导电层包括多个沿第一方向排布的凸出部，凸出部沿第二方向延伸，第一方向与第二方向垂直；导电连接结构，导电连接结构位于相邻的两个凸出部之间，与凸出部侧面接触连接；钝化层，钝化层覆盖掺杂导电层及导电连接结构的表面；多个副栅电极，副栅电极沿第二方向延伸，副栅电极穿过钝化层与凸出部连接。至少可以提高太阳能电池的性能。

Description

一种太阳能电池及光伏组件
技术领域
本申请实施例涉及光伏领域，特别涉及一种太阳能电池及光伏组件。
背景技术
随着能源紧缺的形势不断加剧，可再生能源的开发与利用迫在眉睫。在众多可再生能源之中，太阳能具有无枯竭危险、安全可靠、无噪声、无污染排放及应用不受资源分布地域的限制等突出优势。
太阳能电池用于将太阳能转化为电能，因此太阳能电池得到广泛应用。太阳能电池可以分为晶硅电池及薄膜电池，其中晶硅电池中，隧穿氧化层钝化接触结构电池因其更高的理论效率广受青睐，因此有必要研究性能更好的隧穿氧化层钝化接触结构电池。
发明内容
本申请实施例提供一种太阳能电池及光伏组件，至少有利于提高隧穿氧化层钝化接触结构电池的性能。
根据本申请一些实施例，本申请实施例一方面提供一种太阳能电池，包括：基底；隧穿介质层，所述隧穿介质层位于所述基底的表面；掺杂导电层，所述掺杂导电层位于所述隧穿介质层的表面，所述掺杂导电层包括多个沿第一方向排布的凸出部，所述凸出部沿第二方向延伸，所述第一方向与所述第二方向垂直；导电连接结构，所述导电连接结构位于相邻的两个所述凸出部之间，与所述凸出部侧面接触连接；钝化层，所述钝化层覆盖所述掺杂导电层及所述导电连接结构的表面；多个副栅电极，所述副栅电极沿所述第二方向延伸，所述副栅电极穿过所述钝化层与所述凸出部连接。
在一些实施例中，所述导电连接结构为多个，多个所述导电连接结构沿所述第一方向间隔分布和/或所述第二方向间隔分布，在沿所述第一方向上，相邻的所述导电连接结构之间具有至少一条所述副栅电极。
在一些实施例中，所有相邻的所述副栅电极之间均具有所述导电连接结构。
在一些实施例中，相邻所述副栅电极之间，具有多个间隔分布的所述导电连接结构。
在一些实施例中，在沿所述第二方向上，所述多个间隔分布的所述导电连接结构中，相邻的所述导电连接结构之间的间距相等。
在一些实施例中，在沿所述第二方向上，相邻的所述导电连接结构之间的间距为0.01mm～20mm。
在一些实施例中，多个所述导电连接结构阵列排布，包括多列沿所述第一方向排布的多个所述导电连接结构以及沿所述第二方向排布的多个所述导电连接结构。
在一些实施例中，还包括：主栅电极，所述主栅电极沿所述第一方向延伸，并电连接沿所述第一方向排布的多个副栅电极。
在一些实施例中，所述导电连接结构与所述主栅电极相间隔。
在一些实施例中，所述导电连接结构在所述基底上的投影与所述主栅电极在所述基底上的投影至少部分重合。
在一些实施例中，处于最外侧的所述主栅电极的外侧具有至少两列沿所述第一方向排布的多个所述导电连接结构。
在一些实施例中，在沿所述第二方向上，所述导电连接结构的宽度为10μm～500μm。
在一些实施例中，在垂直于所述基底的方向上，所述导电连接结构的顶面低于或者齐平于所述凸出部的顶面。
在一些实施例中，所述导电连接结构的材料与所述掺杂导电层的材料相同。
在一些实施例中，所述掺杂导电层的材料可以是掺杂非晶硅、掺杂多晶硅或者掺杂微晶硅材料中的一者。
在一些实施例中，所述掺杂导电层的掺杂类型与所述基底的掺杂类型相同。
在一些实施例中，所述基底为N型基底，所述掺杂导电层为N型多晶硅层。
根据本申请一些实施例，本申请实施例另一方面还提供一种光伏组件，包括：电池串，所述电池串由多个如上述太阳能电池连接而成；封装层，所述封装层用于覆盖所述电池串的表面；盖板，所述盖板用于覆盖所述封装层远离所述电池串的表面。
本申请实施例提供的技术方案至少具有以下优点：通过基底的表面形成隧穿介质层及所述掺杂导电层，所述掺杂导电层位于所述隧穿介质层的表面，且掺杂导电层还包括沿第一方向排布的凸出部，通过设置沿第一方向排布的凸出部可以减少掺杂导电层的寄生吸光，通过在相邻的凸出部之间设置与凸出部相连接的导电连接结构可以增加掺杂导电层的横向传输能力。
附图说明
一个或多个实施例通过与之对应的附图中的图片进行示例性说明，这些示例性说明并不构成对实施例的限定，除非有特别申明，附图中的图不构成比例限制；为了更清楚地说明本申请实施例或传统技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一实施例提供的一种太阳能电池的结构示意图；
图2为本申请一实施例提供的一种太阳能电池的剖面示意图；
图3为本申请一实施例提供的第一种太阳能电池的俯视图；
图4为本申请一实施例提供的第二种太阳能电池的俯视图；
图5为本申请一实施例提供的第三种太阳能电池的俯视图；
图6为本申请一实施例提供的第四种太阳能电池的俯视图；
图7为本申请一实施例提供的第五种太阳能电池的俯视图；
图8为本申请一实施例提供的一种光伏组件的结构示意图。
具体实施方式
由背景技术可知，目前掺杂导电层的寄生吸光能力会导致太阳能电池的光的利用率降低，为解决掺杂导电层的寄生吸光能力通常是通过减薄掺杂导电层的厚度，因此，一类具有凸出部的掺杂导电层结构被提出，通过在副栅电极所在的区域设置较厚的掺杂导电层，通过在副栅电极之间的区域设置较薄的掺杂导电层，从而可以减少掺杂导电层的寄生吸光，但是该结构会带来新的问题，即副栅电极之间的区域的掺杂导电层较薄，导致大量载流子因为横向传输通道较窄，在传输过程中相互碰撞消耗，影响载流子的传输速率。
本申请实施例通过在凸出部之间设置与凸出部相连接的导电接触结构，通过导电接触结构可以使载流子在横向传输的过程中通过导电接触结构进行传输，从而可以增加载流子的横向传输能力，且相较于整层较厚的掺杂导电层，本申请提供的太阳能电池还可以减少掺杂导电层的寄生吸光。
下面将结合附图对本申请的各实施例进行详细的阐述。然而，本领域的普通技术人员可以理解，在本申请各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。
图1至图7为本申请实施例提供的太阳能电池的结构示意图，图1为本申请一实施例提供的一种太阳能电池的结构示意图，图2为本申请一实施例提供的沿图1虚线AA方向的剖面示意图；图3为本申请一实施例提供的第一种太阳能电池的俯视图，图4为本申请一实施例提供的第二种太阳能电池的俯视图，图5为本申请一实施例提供的第三种太阳能电池的俯视图，图6为本申请一实施例提供的第四种太阳能电池的俯视图，图7为本申请一实施例提供的第五种太阳能电池的俯视图。
参考图1至图7，太阳能电池包括：基底100；隧穿介质层110，隧穿介质层110位于基底100的表面；掺杂导电层120，掺杂导电层120位于隧穿介质层110的表面，掺杂导电层120包括多个沿第一方向X排布的凸出部121，凸出部121沿第二方向Y延伸，第一方向X与第二方向Y垂直；导电连接结构130，导电连接结构130位于相邻的两个凸出部121之间，与凸出部121侧面接触连接；钝化层140，钝化层140覆盖掺杂导电层120及导电连接结构130的表面；多个副栅电极150，副栅电极150沿第二方向Y延伸，副栅电极150穿过钝化层140与凸出部121连接。通过设置导电连接结构130可以使得相邻的两个凸出部121之间的载流子通过导电连接结构130进行横向传输，从而可以提高太阳能电池的横向传输能力。
在一些实施例中，基底100为硅基底，可以包括单晶硅、多晶硅、非晶硅或微晶硅中的一种或多种。在另一些实施例中，基底100的材料还可以为碳化硅、有机材料或多元化合物。多元化合物可以包括但不限于钙钛矿、砷化镓、碲化镉、铜铟硒等材料。
在一些实施例中，基底100内具有掺杂元素，掺杂元素类型为N型或者P型，N型元素可以为磷(P)元素、铋(Bi)元素、锑(Sb)元素或砷(As)元素等Ⅴ族元素，P型元素可以为硼(B)元素、铝(Al)元素、镓(Ga)元素或铟(In)元素等Ⅲ族元素。例如，当基底100为P型基底时，其内部掺杂元素类型为P型。或者，当基底100为N型基底时，其内部掺杂元素类型为N型。
在一些实施例中，隧穿介质层110与掺杂导电层120可以构成基底100表面的钝化接触结构，通过形成隧穿介质层110与掺杂导电层120可以降低载流子在电池表面的复合，增加电池的开路电压，从而提升电池的效率。在一些实施例中，隧穿介质层110可以位于基底100的第一表面，第一表面为面向太阳光的受光面。在一些实施例中，隧穿介质层110可以位于基底100的第二表面，第二表面为第一表面相对的背光面。在一些实施例中，隧穿介质层110可以同时位于基底100的第一表面和第二表面(图1未示出)。可以理解的是，位于隧穿介质层110之上的其它层也同步设置于基底100的第一表面和/或第二表面。
在一些实施例中，隧穿介质层110还可以用于减弱或阻止掺杂导电层120的掺杂物扩散至基底100内。
在一些实施例中，隧穿介质层110的材料可以包括但不限于氧化铝、氧化硅、氮化硅、氮氧化硅、本征非晶硅和本征多晶硅等具有隧穿作用的电介质材料。具体的隧穿介质层110可以由包括硅氧化物(SiOx)的硅氧化物层形成，硅氧化物具有良好的钝化特性，且载流子可以很容易的隧穿硅氧化物层。
在一些实施例中，隧穿介质层110的厚度可以是0.5nm～2.5nm，可选地，隧穿介质层110的厚度为0.5nm～2nm，进一步地，隧穿介质层110的厚度为0.5nm～1.2nm。当隧穿介质层110的厚度小于0.5mm，形成隧穿介质层110的工艺难度较大；当隧穿介质层110的厚度大于2.5mm时，隧穿效应较弱。
在一些实施例中，导电连接结构130的材料与掺杂导电层120的材料相同，通过设置导电连接结构130与掺杂导电层120的材料相同可以减少整个生产过程中的材料种类，以便于管理。例如，导电连接结构130的材料包括多晶硅、非晶硅、微晶硅中的至少一种。
在一些实施例中，在形成掺杂导电层120的凸出部121的同时可以形成导电连接结构130，即，通过在同一步工艺步骤中刻蚀掺杂导电层120，以形成凸出部121及导电连接结构130，通过在一步中形成凸出部121及导电连接结构130可以保证凸出部121与导电连接结构130的连接可靠性，且还可以减少生成工艺中的生产步骤，降低生产时长。在另一些实施例中，还可以将凸出部与导电连接结构分开形成。
在一些实施例中，掺杂导电层120的材料可以是掺杂非晶硅、掺杂多晶硅或者掺杂微晶硅材料中的一者。在另一些实施例中，掺杂导电层120还可以是其他材料，可以根据实际情况进行选择，例如碳化硅。
在一些实施例中，掺杂导电层120可以先在隧穿介质层110的表面形成导电层，然后对导电层进行掺杂以形成掺杂导电层120。
在一些实施例中，掺杂导电层120的厚度范围为40nm～150nm，可选地，掺杂导电层120的厚度范围为60nm～90nm，掺杂导电层120的厚度范围可以保证掺杂导电层120的光学损失较小以及隧穿介质层110的界面钝化效果较好，从而提升电池效率。本申请实施例中掺杂导电层的材料可以是多晶硅。
在一些实施例中，掺杂导电层120的掺杂类型与基底100的掺杂类型相同，可以理解的是，当基底100的掺杂类型为N型，掺杂导电层120的掺杂类型为P型时，基底100的多子为电子，掺杂导电层120的多子为空穴，两者之间会直接复合消融，导致副栅电极150收集的载流子变少，因此将掺杂导电层120的掺杂类型与基底100的掺杂类型相同，可以避免副栅电极150收集到的载流子变少。
在一些实施例中，基底100为N型基底，掺杂导电层120为N型多晶硅层；在另一些实施例中基底也可以是P型基底，掺杂导电层为P型多晶硅层。N型基底及N型多晶硅层具有较高的光电转化效率，P型基底及P型多晶硅层的形成工艺简单，可以根据实际情况进行选择，本申请实施例不对基底100及掺杂导电层120进行限制。
在一些实施例中，导电连接结构130与凸出部121都为刻蚀掺杂导电层120形成的，可以通过设置好掺杂导电层120的形状，然后刻蚀掺杂导电层120，以在同一步工艺中形成凸出部121及导电连接结构130。
在一些实施例中，钝化层140可以是减反射膜层，从而可以减少太阳能电池表面的发射光，从而增加太阳能电池的透光量，钝化层140可以为单层结构或叠层结构，钝化层140的材料可以为氧化硅、氮化硅、氮氧化硅、碳氮氧化硅、氧化钛、氧化铪或氧化铝等材料中的一种或多种。在一些实施例中，钝化层140为含氢钝化层，比如含氢氧化硅、含氢氮化硅、含氢氮氧化硅等。
在一些实施例中，副栅电极150用于收集并汇总太阳能电池的电流。副栅电极150可以由烧穿型浆料烧结而成。副栅电极150的材料可以为铝、银、金、镍、钼或铜的一种或多种。在一些情况下，副栅电极150是指细栅线或指状栅线，以区别于主栅电极线或者汇流条。
参考图3至7，在一些实施例中，导电连接结构130为多个，多个导电连接结构130沿第一方向X间隔分布和/或第二方向Y间隔分布，在沿第一方向X上，相邻的导电连接结构130之间具有至少一条副栅电极150。换句话说，多个导电连接结构130可以沿第一方向X间隔分布，或者沿第二方向Y间隔分布，或者沿第一方向X间隔分布且沿第二方向Y间隔分布；沿第一方向X上，相邻的导电连接结构130之间具有至少一条副栅电极150，当相邻的导电连接结构130之间具有一条副栅电极150时，每两个相邻的凸出部之间都具有导电连接结构130，当相邻的导电连接结构130之间具有多条副栅电极150时，导电连接结构130可以是间隔式分布，例如，在第一方向上，第一条副栅电极和第二条副栅电极之间有导电连接结构130，第二条副栅电极和第三条副栅电极之间没有导电连接结构130，通过设置相邻的导电连接结构130之间具有至少一条副栅电极150可以增加太阳能电池的横向传输能力。
需要说明的是，上述的第一条副栅电极、第二条副栅电极及第三条副栅电极仅是为了便于说明，并不对副栅电极150有所限定。
参考图3及图4，在一些实施例中，所有相邻的副栅电极150之间均具有导电连接结构130，即，每两个副栅电极150之间都具有导电连接结构130，通过在每两个副栅电极150之间都设置有导电连接结构130可以提高相邻凸出部121之间的横向传输能力。
参考图6，在一些实施例中，部分相邻副栅电极150之间设置有导电连接结构130，部分相邻副栅电极150之间不设有导电连接结构130，且在第一方向上，导电连接结构130可以成规则排布。例如，第一条副栅电极与第二条副栅电极之间有导电连接结构130，第二条副栅电极和第三条副栅电极之间没有导电连接结构130，第三条副栅电极和第四条副栅电极之间有导电连接结构130，依次类推；或者第一条副栅电极与第二条副栅电极之间有导电连接结构130，第二条副栅电极和第三条副栅电极之间也有导电连接结构130，第三条副栅电极与第四条副栅电极之间没有导电连接结构130，第四条副栅电极与第五条副栅电极之间有导电连接结构130，等诸如此类的规则排布，或者导电连接结构130也可不呈规则排布。
需要说明的是，上述规则排布仅是便于说明进行的举例，还可以是其他规则排布。
参考图3，在一些实施例中，相邻副栅电极150之间，具有多个间隔分布的导电连接结构130，即在相邻的副栅电极150之间，具有多个沿第二方向间隔排布的导电连接结构130，通过在相邻的副栅电极150之间设置多个导电连接结构130，可以增加相邻副栅电极150之间的横向传输能力，且相较于在相邻副栅电极150之间仅设置一个导电连接结构130而言，设置多个导电连接结构130增强的横向传输能力也就越强。
在一些实施例中，在沿第二方向Y上，多个间隔分布的导电连接结构130中，相邻的导电连接结构130之间的间距相等，通过设置间距相等的导电连接结构130便于在形成过程中的激光消融工艺，即，可以不需要调整相邻导电连接结构之间的间距，从而可以便于生产。
在一些实施例中，在沿第二方向上，相邻的导电连接结构130之间的间距为0.01mm～20mm，例如0.1mm、0.5mm或者10mm等。当导电连接结构130之间的间距小于0.01mm，则会导致导电连接结构130设置的太密集，且会造成导电连接结构130吸光严重，不利于太阳能电池的光电转化效率的提升；当导电连接结构130之间的间距大于20mm，则会导致导电连接结构130设置的过少，导致改善的效果不好。在另一些实施例中，相邻的导电连接结构130之间的间距也可以是其他数值，可以根据实际情况进行调整，本申请实施例不对导电连接结构130之间的间距进行限制。
参考图3、图6及图7，在一些实施例中，多个导电连接结构130阵列排布，包括多列沿第一方向X排布的多个导电连接结构130以及沿第二方向Y排布的多个导电连接结构130，即，导电连接结构130在第一方向X及第二方向Y上都是呈规则排布，通过多个导电连接结构130阵列排布可以在增加太阳能电池的横向传输能力的同时降低形成多个导电连接结构130的工艺难度。
在一实施例中，以多列沿第一方向X排布的多个导电连接结构130为4列为例，且沿第一方向X依次为第一列导电连接结构、第二列导电连接结构、第三列导电连接结构及第四列导电连接结构，第一列导电连接结构、第二列导电连接结构、第三列导电连接结构及第四列导电连接结构的每个导电连接结构在第二方向上可以是同行设置；在另一些实施例中，第一列导电连接结构与第二列导电连接结构也可以不是位于同一行，即，第一列导电连接结构与第二列导电连接结构在第二方向上交错排布；或者部分第一列导电连接结构与部分第二列导电连接结构是同行设置，本申请不对导电连接结构130进行限制，仅需满足多个导电连接结构130成阵列排布即可。
在一些实施例中，在沿第二方向Y上，导电连接结构130的宽度为10μm～500μm，例如50μm、80μm或者100μm等。可以理解的是，当导电连接结构130的宽度小于10μm时，每个导电连接结构130的横向传输能力较弱，改善效果不佳；当导电连接结构130的宽度大于500μm时，导电连接结构130自身可能具有较高的寄生吸光能力，不利于太阳能电池的光电转化效率的提升。在另一些实施例中，导电连接结构130的宽度还可以是其他尺寸，可以根据实际情况进行调整。
在一些实施例中，导电连接结构130的顶面低于或者齐平于凸出部121的顶面。换句话说，在垂直于基底100表面的方向上，导电连接结构130的厚度小于或者等于凸出部121的厚度，当导电连接结构130的顶面低于凸出部121的顶面时，导电连接结构130的吸光能力会降低，从而有利于提高太阳能电池的光电转换效率；当导电连接结构130的顶面与凸出部121的顶面齐平时，可以简化太阳能电池的生产过程，可以通过激光消融的方式在同一步工艺中形成凸出部121及导电连接结构130。在另一些实施例中，导电连接结构的顶面还可以高于凸出部的顶面，可以根据实际情况进行调整。
在一些实施例中，在垂直于基底100表面的方向上，导电连接结构130的高度可以是凸出部121高度的0.5～1.2倍，当导电连接结构130的高度低于凸出部121高度的0.5时，导电连接结构130的厚度较薄，因此带来的改善横向传输的能力较弱，改善不明显；当导电连接结构130的高度高于凸出部121高度的1.2时，导电连接结构130的厚度较厚，导致导电连接结构130的寄生吸光能力也较强，反而会影响太阳能电池的光电转化效率。
在一些实施例中，还包括：主栅电极160，主栅电极160沿第一方向X延伸，并电连接沿第一方向X排布的多个副栅电极150。通过设置主栅电极160可以将副栅电极150上收集的电流进行汇集，并导出太阳能电池。
在一些实施例中，导电连接结构130与主栅电极160相间隔，可以理解的是，通过设置导电连接结构130与主栅电极160相间隔，可以通过导电连接结构130对主栅电极160进行限位，从而便于后续主栅电极160的印刷，从而可以不进行额外的定位处理就可以将主栅电极160的位置确定下来，可以便于工艺生产步骤。
在一些实施例中，在相邻主栅电极160之间可以设置一列沿第一方向X间隔分布的导电连接结构130，在另一些实施例中，在相邻主栅电极160之间也可以设置多列沿第一方向X间隔分布的导电连接结构130，本申请不对主栅电极160之间的导电连接结构130的数量进行限制，可以根据实际情况进行调整。
在一些实施例中，导电连接结构130在基底100上的投影与主栅电极160在基底100上的投影至少部分重合，可以理解的是，主栅电极160通常是非烧结型，主栅电极160通常用于收集副栅电极150上收集的光生载流子，也就是说，主栅电极160并不会腐蚀位于主栅电极160底面的结构，故通过在主栅电极160底面设置导电连接结构130并不会对导电连接结构130产生影响，也就不会对导电连接结构130的横向传输能力造成影响，且通过设置主栅电极160遮挡至少部分导电连接结构130可以降低导电连接结构130的寄生吸光能力，从而可以提高太阳能电池的光电转换效率。
在一些实施例中，处于最外侧的主栅电极160的外侧具有至少两列沿第一方向X排布的多个导电连接结构130，在另一些实施例，也可以不在主栅电极的外侧设置沿第一方向排布的导电连接结构，或者也可以只在主栅电极的外侧设置一列沿第一方向排布的导电连接结构，通过设置至少两列导电连接结构130可以提高导电连接结构130的数量，从而提高太阳能电池的横向传输能力。
在一些实施例中，太阳能电池包括正面和背面，其中，正面为受光面吸收入射光，背面为与正面相对的表面。隧穿介质层110、掺杂导电层120、导电连接结构130、钝化层140及副栅电极150可以设置在太阳能电池的正面和背面。
在一些实施例中，太阳能电池背面的掺杂导电层120的掺杂类型与基底100的掺杂类型相同，太阳能电池正面的掺杂导电层120的掺杂类型与基底100的掺杂类型相反，以基底100为N型基底为例，太阳能电池背面的掺杂导电层120的掺杂类型为N型，太阳能电池正面的掺杂导电层120的掺杂类型为P型。
本申请实施例通过在基底100表面形成隧穿介质层110及掺杂导电层120，且掺杂导电层120具有凸出部121，通过在掺杂导电层120上形成高度差，以在保证副栅电极150与掺杂导电层120接触的同时降低掺杂导电层120的寄生吸光，在掺杂导电层120的凸出部121之间设置导电连接结构130，通过导电连接结构130连接相邻的两个凸出部121，从而可以增加掺杂导电层120的横向传输能力，从而可以提高太阳能电池的传输速率。
相应地，参考8，本申请实施例另一方面还提供一种光伏组件，光伏组件用于将接收的光能转化为电能以及传输给外部负载。光伏组件包括：至少一个电池串，电池串由多个上述(例如，图1～4)任一项太阳能电池10连接而成；封装胶膜21，用于覆盖电池串的表面；盖板22，用于覆盖封装胶膜21背离电池串的表面。
封装胶膜21可以为EVA或POE等有机封装胶膜，封装胶膜21覆盖在电池串的表面以密封保护电池串。在一些实施例中，封装胶膜21包括分别覆盖在电池串表面的两侧的上层封装胶膜和下层封装胶膜。盖板22可以为玻璃盖板或塑料盖板等用于保护电池串的盖板，盖板22覆盖在封装胶膜21背离电池串的表面。在一些实施例中，盖板22上设置有陷光结构以增加入射光的利用率。光伏组件具有较高的电流收集能力和较低的载流子复合率，可实现较高的光电转换效率。在一些实施例中，盖板22包括位于电池串两侧的上盖板和下盖板。
本领域的普通技术人员可以理解，上述各实施方式是实现本申请的具体实施例，而在实际应用中，可以在形式上和细节上对其作各种改变，而不偏离本申请实施例的精神和范围。任何本领域技术人员，在不脱离本申请实施例的精神和范围内，均可作各自更动与修改，因此本申请实施例的保护范围应当以权利要求限定的范围为准。

Claims (18)

1.一种太阳能电池，其特征在于，包括：
基底；
隧穿介质层，所述隧穿介质层位于所述基底的表面；
掺杂导电层，所述掺杂导电层位于所述隧穿介质层的表面，所述掺杂导电层包括多个沿第一方向排布的凸出部，所述凸出部沿第二方向延伸，所述第一方向与所述第二方向垂直；
导电连接结构，所述导电连接结构位于相邻的两个所述凸出部之间，与所述凸出部侧面接触连接；
钝化层，所述钝化层覆盖所述掺杂导电层及所述导电连接结构的表面；
多个副栅电极，所述副栅电极沿所述第二方向延伸，所述副栅电极穿过所述钝化层与所述凸出部连接。
2.根据权利要求1所述的太阳能电池，其特征在于，所述导电连接结构为多个，多个所述导电连接结构沿所述第一方向间隔分布和/或所述第二方向间隔分布，在沿所述第一方向上，相邻的所述导电连接结构之间具有至少一条所述副栅电极。
3.根据权利要求2所述的太阳能电池，其特征在于，所有相邻的所述副栅电极之间均具有所述导电连接结构。
4.根据权利要求2所述的太阳能电池，其特征在于，相邻所述副栅电极之间，具有多个间隔分布的所述导电连接结构。
5.根据权利要求4所述的太阳能电池，其特征在于，在沿所述第二方向上，所述多个间隔分布的所述导电连接结构中，相邻的所述导电连接结构之间的间距相等。
6.根据权利要求4所述的太阳能电池，其特征在于，在沿所述第二方向上，相邻的所述导电连接结构之间的间距为0.01mm～20mm。
7.根据权利要求2所述的太阳能电池，其特征在于，多个所述导电连接结构阵列排布，包括多列沿所述第一方向排布的多个所述导电连接结构以及沿所述第二方向排布的多个所述导电连接结构。
8.根据权利要求2所述的太阳能电池，其特征在于，还包括：主栅电极，所述主栅电极沿所述第一方向延伸，并电连接沿所述第一方向排布的多个副栅电极。
9.根据权利要求8所述的太阳能电池，其特征在于，所述导电连接结构与所述主栅电极相间隔。
10.根据权利要求8所述的太阳能电池，其特征在于，所述导电连接结构在所述基底上的投影与所述主栅电极在所述基底上的投影至少部分重合。
11.根据权利要求8所述的太阳能电池，其特征在于，处于最外侧的所述主栅电极的外侧具有至少两列沿所述第一方向排布的多个所述导电连接结构。
12.根据权利要求1所述的太阳能电池，其特征在于，在沿所述第二方向上，所述导电连接结构的宽度为10μm～500μm。
13.根据权利要求1所述的太阳能电池，其特征在于，在垂直于所述基底的方向上，所述导电连接结构的顶面低于或者齐平于所述凸出部的顶面。
14.根据权利要求1所述的太阳能电池，其特征在于，所述导电连接结构的材料与所述掺杂导电层的材料相同。
15.根据权利要求14所述的太阳能电池，其特征在于，所述掺杂导电层的材料可以是掺杂非晶硅、掺杂多晶硅或者掺杂微晶硅材料中的一者。
16.根据权利要求14所述的太阳能电池，其特征在于，所述掺杂导电层的掺杂类型与所述基底的掺杂类型相同。
17.据权利要求14所述的太阳能电池，其特征在于，所述基底为N型基底，所述掺杂导电层为N型多晶硅层。
18.一种光伏组件，其特征在于，包括：
电池串，所述电池串由多个如权利要求1～17任一项所述太阳能电池连接而成；
封装层，所述封装层用于覆盖所述电池串的表面；
盖板，所述盖板用于覆盖所述封装层远离所述电池串的表面。
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