JP7470762B2 - 太陽電池および光起電力モジュール - Google Patents
太陽電池および光起電力モジュール Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 158
- 239000000463 material Substances 0.000 claims description 39
- 230000002093 peripheral effect Effects 0.000 claims description 39
- 238000002161 passivation Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 468
- 239000000969 carrier Substances 0.000 description 63
- 238000010521 absorption reaction Methods 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
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- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 5
- -1 i.e. Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920006124 polyolefin elastomer Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910001451 bismuth ion Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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Description
成長プロセスを採用して基板100の第1表面に初期トンネル誘電体層101と初期ドーピング導電層102を形成し、その中で、初期トンネル誘電体層101は基板100の第1表面全体を覆い、初期ドーピング導電層102はトンネル誘電体層101の第1表面全体を覆うことと、
離隔して分布するドーピング導電層102の形状及び導電性輸送層104の形状を定義するように、初期ドーピング導電層102の上面をパターン化することと、
パターン化された初期ドーピング導電層102に対してエッチングを行い、初期ドーピング導電層102の一部を除去し、離隔して分布するドーピング導電層102と隣接するドーピング導電層102間に位置する導電性輸送層104を形成することと、を含む。
Claims (19)
- 基板と、前記基板の第1表面に位置するトンネル誘電体層と、複数のドーピング導電層と、離隔して配置された複数の第1電極と、少なくとも1つの導電性輸送層と、を含み、
前記ドーピング導電層は前記トンネル誘電体層の前記基板から離れた表面に位置し、かつ、複数の前記ドーピング導電層は離隔して配置され、
前記第1電極は第1方向に沿って延びており、前記第1電極は、前記ドーピング導電層の前記基板から離れた側に配置されかつ前記ドーピング導電層と電気的に接続され、
前記導電性輸送層は隣接する前記ドーピング導電層の間に位置しかつ前記ドーピング導電層の側面と接触し、
前記導電性輸送層の上面は光トラッピング構造を備える、
ことを特徴とする太陽電池。 - 前記導電性輸送層は複数があり、複数の前記導電性輸送層は前記第1方向に沿って離隔して配置される、
ことを特徴とする請求項1に記載の太陽電池。 - 複数の前記導電性輸送層がアレイとして配置され、前記アレイは、第2方向に沿って離隔して配置された複数列の前記導電性輸送層を含み、ここで、各列の前記導電性輸送層のうちの複数の前記導電性輸送層は第1方向に沿って離隔して配置され、かつ第2方向に沿って隣接する2列の前記導電性輸送層の間に少なくとも1本の前記第1電極があり、前記第2方向は前記第1方向に対して垂直である、
ことを特徴とする請求項2に記載の太陽電池。 - すべての隣接する前記第1電極の間はいずれも前記導電性輸送層がある、
ことを特徴とする請求項3に記載の太陽電池。 - 1列の前記導電性輸送層と隣接する1列の前記導電性輸送層とは前記第1方向に沿ってずらして配置される、
ことを特徴とする請求項3に記載の太陽電池。 - 1列の前記導電性輸送層における各前記導電性輸送層は、隣接する1列の前記導電性輸送層における各前記導電性輸送層と1対1対応しており、かつ対応する2つの前記導電性輸送層は、前記第2方向に沿って離隔して配置されている、
ことを特徴とする請求項3に記載の太陽電池。 - 離隔して配置される複数の第2電極をさらに含み、前記第2電極は前記第2方向に沿って延び、かつ前記第2方向に沿って離隔して配置された複数の前記第1電極と電気的に接続される、
ことを特徴とする請求項3に記載の太陽電池。 - 1列の前記導電性輸送層において、隣接する2つの前記導電性輸送層間には、少なくとも1本の前記第2電極がある、
ことを特徴とする請求項7に記載の太陽電池。 - 1列の前記導電性輸送層において、隣接する2つの前記導電性輸送層間には、2本の前記第2電極がある、
ことを特徴とする請求項8に記載の太陽電池。 - 1列の前記導電性輸送層と隣接する1列の前記導電性輸送層とは前記第1方向に沿ってずらして配置され、異なる列に属しかつずらして配置された2つの前記導電性輸送層はそれぞれ前記第2電極の対向する両側に位置する、
ことを特徴とする請求項9に記載の太陽電池。 - 前記基板は周辺領域と中心領域を含み、最も外側に位置する前記第2電極の外側は前記周辺領域であり、前記基板のうち前記周辺領域を除く領域は前記中心領域であり、ここで、前記周辺領域に位置する前記導電性輸送層の前記第1方向におけるピッチは、前記中心領域に位置する前記導電性輸送層の前記第1方向におけるピッチより小さい、
ことを特徴とする請求項7に記載の太陽電池。 - 前記中心領域に位置する各列の前記導電性輸送層において、各前記導電性輸送層の前記第1方向におけるピッチは等しい、
ことを特徴とする請求項11に記載の太陽電池。 - 前記中心領域における各列の前記導電性輸送層において、各前記導電性輸送層間のピッチは0.01mm~20mmであり、前記周辺領域における各列の前記導電性輸送層において、各前記導電性輸送層間のピッチは0.005mm~18mmである、
ことを特徴とする請求項12に記載の太陽電池。 - 接続部をさらに含み、前記接続部は、前記第1方向に沿って離隔して配置されて隣接する前記導電性輸送層間に位置し、隣接する2つの前記導電性輸送層の側面と電気的に接触する、
ことを特徴とする請求項2に記載の太陽電池。 - 前記導電性輸送層の上面は前記ドーピング導電層の上面より低いか、または面一である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記導電性輸送層の材料は前記ドーピング導電層の材料と同じである、
ことを特徴とする請求項1に記載の太陽電池。 - 前記ドーピング導電層の材料は、ドープしたアモルファスシリコン、ドープした多結晶シリコンまたはドープした微結晶シリコン材料の少なくとも1つである、
ことを特徴とする請求項16に記載の太陽電池。 - 第1パッシベーション層をさらに含み、一部の前記第1パッシベーション層は前記基板の第1表面を覆い、残りの前記第1パッシベーション層は前記ドーピング導電層および前記導電性輸送層の上面を覆う、
ことを特徴とする請求項1に記載の太陽電池。 - 請求項1~18のいずれか1項に記載の太陽電池を複数連結したセルストリングと、
前記セルストリングの表面を覆うための封止層と、
前記封止層の前記セルストリングから離れた表面を覆うためのカバープレートと、を含む、
ことを特徴とする光起電力モジュール。
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