JP2016092424A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2016092424A JP2016092424A JP2015216904A JP2015216904A JP2016092424A JP 2016092424 A JP2016092424 A JP 2016092424A JP 2015216904 A JP2015216904 A JP 2015216904A JP 2015216904 A JP2015216904 A JP 2015216904A JP 2016092424 A JP2016092424 A JP 2016092424A
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- oxide film
- metal oxide
- solar cell
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- 239000004065 semiconductor Substances 0.000 claims abstract description 111
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 98
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 230000005684 electric field Effects 0.000 claims description 42
- 239000000969 carrier Substances 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910001848 post-transition metal Inorganic materials 0.000 claims description 4
- 229910004012 SiCx Inorganic materials 0.000 claims description 3
- 229910004286 SiNxOy Inorganic materials 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- 229910020286 SiOxNy Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- 238000000034 method Methods 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- -1 region Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (20)
- 第1導電型の不純物を含有する半導体基板と、
前記半導体基板の上に位置する金属酸化膜と、
前記金属酸化膜の上に位置し、前記第1導電型と反対の第2導電型を有するエミッタ部と、
前記エミッタ部に接続される第1電極、と
前記半導体基板に接続される第2電極とを含む、太陽電池。 - 前記金属酸化膜に含まれる金属は、遷移金属または遷移後金属の内、少なくとも一つを含む、請求項1に記載の太陽電池。
- 前記金属酸化膜は、NiO、TiO2、HfO2、ZrO、WO、CuO、Ta2O5、Al2O3の内、いずれか一つで形成される、請求項1に記載の太陽電池。
- 前記金属酸化膜と前記エミッタ部は、前記半導体基板の後面に位置する、請求項1に記載の太陽電池。
- 前記金属酸化膜の上に位置し、前記半導体基板の不純物濃度より前記第1導電型の不純物を高濃度で含有する後面電界部とをさらに含む、請求項4に記載の太陽電池。
- 前記エミッタ部と前記後面電界部は多結晶シリコン材質から形成される、請求項5に記載の太陽電池。
- 前記金属酸化膜の後面に真性半導体層をさらに含み、
前記エミッタ部と前記後面電界部は、前記真性半導体層を間の位置に形成され、互いに分離される、請求項5に記載の太陽電池。 - 前記半導体基板と前記金属酸化膜との間には、前記半導体基板で生成されるキャリアを通過させる誘電体材質のトンネル層とがさらに位置する、請求項5に記載の太陽電池。
- 前記金属酸化膜の厚さは、前記トンネル層の厚さより大きく、前記エミッタ部又は前記後面電界部の厚さより小さい、請求項8に記載の太陽電池。
- 前記金属酸化膜の厚さは、5nm〜50nmの間である、請求項9に記載の太陽電池。
- 前記金属酸化膜は、
前記金属酸化膜の前後面に臨界電圧以上の電圧が印加されるとき、0Ωより大きく10Ω以下の抵抗値を有し、
前記金属酸化膜の前後面に臨界電圧未満の電圧が印加されたり電圧が印加されないとき、10MΩ〜100MΩの間の抵抗値を有する、請求項1に記載の太陽電池。 - 前記臨界電圧が0.7V〜1Vである、請求項11に記載の太陽電池。
- 前記太陽電池が動作するとき、
前記エミッタ部と前記半導体基板との間の金属酸化膜の第1部分と、前記後面電界部と前記半導体基板との間の前記金属酸化膜の第2部分を介して、キャリアが移動し、
前記真性半導体層と前記半導体基板との間の前記金属酸化膜の第3部分を介しては、キャリアが移動しない、請求項5に記載の太陽電池。 - 前記トンネル層の誘電体の材質は、SiCxまたはSiOxである、請求項8に記載の太陽電池。
- 前記トンネル層は、0.5nm〜2.5nmの間の厚さを有する、請求項8に記載の太陽電池。
- 前記エミッタ部と前記後面電界部及び、前記真性半導体層の後面には、パッシベーション層とがさらに位置する、請求項5に記載の太陽電池。
- 前記パッシベーション層は、水素化された窒化シリコン膜(SiNx:H)、水素化された酸化シリコン膜(SiOx:H)、水素化された窒化酸化シリコン膜(SiNxOy:H)、水素化された酸化窒化シリコン膜(SiOxNy:H)、水素化された非晶質シリコン(a−Si:H)の内、少なくともいずれか一つを含む、請求項16に記載の太陽電池。
- 半導体基板と、
前記半導体基板に位置する、エミッタ部と、後面電界部と、真性半導体部と、
前記半導体基板と、前記エミッタ部と、前記後面電界部と前記真性半導体部の間に位置する金属酸化膜とを含み、
前記金属酸化膜は前記半導体基板の漏れ電流を遮断する、太陽電池。 - 前記金属酸化膜は、NiO、TiO2、HfO2,ZrO,WO、CuO,TaO5及びAl2O3の内の一つから形成される、請求項18に記載の太陽電池。
- 前記金属酸化膜は、5nm〜50nmの厚さを有する、請求項18に記載の太陽電池。
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US11355657B2 (en) | 2015-03-27 | 2022-06-07 | Sunpower Corporation | Metallization of solar cells with differentiated p-type and n-type region architectures |
US9525083B2 (en) | 2015-03-27 | 2016-12-20 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer |
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