JP2016032115A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP2016032115A JP2016032115A JP2015147954A JP2015147954A JP2016032115A JP 2016032115 A JP2016032115 A JP 2016032115A JP 2015147954 A JP2015147954 A JP 2015147954A JP 2015147954 A JP2015147954 A JP 2015147954A JP 2016032115 A JP2016032115 A JP 2016032115A
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- electric field
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- solar cell
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- 238000000034 method Methods 0.000 title abstract description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 24
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
【解決手段】本発明の太陽電池は、半導体基板と、半導体基板の前面に配置される単結晶シリコン材質の前面電界部と、半導体基板の後面に配置されるトンネル層と、トンネル層の後面の一部に配置されるエミッタ部と、トンネル層の後面の一部に配置される後面電界部と、エミッタ部に接続される第1電極と、及び後面電界部に接続される第2電極とを含み、前面電界部の抵抗値に比べ後面電界部の抵抗値の比は10:1〜3:1の間である。
【選択図】図1
Description
Claims (20)
- 第1導電型の不純物がドーピングされた半導体基板と、
前記半導体基板の前面に配置され、前記第1導電型の不純物が前記半導体基板より高濃度でドーピングされる前面電界部と、
前記半導体基板の後面に配置され、誘電体材質で形成されるトンネル層と、
前記トンネル層の後面の一部に配置され、前記第1導電型と反対の第2導電型の不純物がドーピングされたエミッタ部と、
前記トンネル層の後面の一部に配置され、前記第1導電型の不純物が前記半導体基板より高濃度でドーピングされる後面電界部と、
前記エミッタ部に接続される第1電極と、
前記後面電界部に接続される第2電極とを含み、
前記前面電界部の抵抗値に比べ後面電界部の抵抗値の比は10:1〜3:1の間である太陽電池。 - 前記後面電界部は単位面積当たりの50Ω〜300Ωの間の抵抗値を有し、前記前面電界部は単位面積当たりの500Ω〜900Ωの間の抵抗値を有する、請求項1に記載の太陽電池。
- 前記第1導電型はn型であり、
前記後面電界部の厚さは、前記エミッタ部の厚さより薄い、請求項1に記載の太陽電池。 - 前記エミッタ部と前記後面電界部の間の厚さの差は、50nm〜100nmの間である、請求項3に記載の太陽電池。
- 前記エミッタ部の厚さは、200nm〜300nmの間であり、前記後面電界部の厚さは、100nm〜250nmの間である、請求項3に記載の太陽電池。
- 前記エミッタ部と前記後面電界部は互いに離隔しており、
前記トンネル層の後面中から前記エミッタ部と前記後面電界部との間の離隔された空間には、多結晶シリコンの材質の真性半導体層がさらに配置される、請求項1に記載の太陽電池。 - 前記真性半導体層は、前記後面電界部の厚さと前記エミッタ部の厚さとの間の厚さを有する、請求項6に記載の太陽電池。
- 前記トンネル層は、SiCxまたはSiOxの誘電体材質で形成される、請求項1に記載の太陽電池。
- 前記トンネル層は、0.5nm〜2.5nmの間の厚さを有する、請求項8に記載の太陽電池。
- 第1導電型の不純物を含有する半導体基板の後面に誘電体材質のトンネル層と真性半導体層を蒸着する段階と、
前記真性半導体層の第1領域に前記第1導電型と反対の第2導電型の不純物を注入(implantation)する段階と、
前記第1領域の上に拡散防止膜を形成する拡散防止膜の形成段階と、
前記真性半導体層の中で前記拡散防止膜が形成されない第2領域及び前記半導体基板の前面に前記第1導電型の不純物が含まれたドーピングソースを同時に熱拡散させ、前記半導体基板の前面に前面電界部を形成し前記真性半導体層に後面電界部とエミッタ部を同時に形成する熱拡散段階と、
前記半導体基板の前面と後面を同時にエッチングして、前記前面電界部及び、前記後面電界部の表面の一部をエッチングし、同時に前記エミッタ部上に形成された前記拡散防止膜を除去するエッチング段階と、
前記エミッタ部上に第1電極を形成し、前記後面電界部の上に第2電極を形成する段階とを含む太陽電池の製造方法。 - 前記拡散防止膜形成段階は、
前記拡散防止膜を前記真性半導体層の前記第1領域を含む完全な全体後面に蒸着する拡散防止膜蒸着段階と、
前記真性半導体層において前記第1領域を除外した前記第2領域の上に形成された拡散防止膜をエッチングして、前記後面電界部を形成するためのパターンを形成する後面電界部パターン形成段階とを含む、請求項10に記載の太陽電池の製造方法。 - 前記真性半導体層の前記第1領域と、前記拡散防止膜がエッチングされた前記真性半導体層の前記第2領域は、互いに離隔している、請求項11に記載の太陽電池の製造方法。
- 前記拡散防止膜蒸着段階においてシリコンカーバイド(SiC)材質で形成される前記拡散防止膜が蒸着される、請求項11に記載の太陽電池の製造方法。
- 前記後面電界部パターン形成段階において、前記拡散防止膜の前記第2領域のエッチングは、レーザー照射によって実行される、請求項10に記載の太陽電池の製造方法。
- 前記熱拡散段階において、前記真性半導体層の第1領域に注入された前記第2導電型の不純物も熱拡散されながら、多結晶シリコンの材質の前記エミッタ部で形成される、請求項14に記載の太陽電池の製造方法。
- 前記熱拡散段階によって、シリコンカーバイド(SiC)で形成された拡散防止膜は、シリコンオキサイド(SiOx)で酸化される、請求項10に記載の太陽電池の製造方法。
- 前記熱拡散段階において前記前面電界部及び前記後面電界部に形成された副産物である(PSG(phosphosilicate glass)またはBSG(Boro-Silicate Glass))は、前記エッチング段階で除去される、請求項10に記載の太陽電池の製造方法。
- 前記エッチング段階において前記前面電界部のエッチング速度は、前記後面電界部のエッチング速度より大きい、請求項10に記載の太陽電池の製造方法。
- 前記エッチング段階の結果、前記前面電界部抵抗値対比前記後面電界部抵抗値の比は3:1〜10:1の間で形成される、請求項10に記載の太陽電池の製造方法。
- 前記エッチング段階の結果、前記エミッタ部の厚さと前記後面電界部の厚さは、互いに異なるように形成される、請求項10に記載の太陽電池の製造方法。
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