JP5519440B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5519440B2 JP5519440B2 JP2010174477A JP2010174477A JP5519440B2 JP 5519440 B2 JP5519440 B2 JP 5519440B2 JP 2010174477 A JP2010174477 A JP 2010174477A JP 2010174477 A JP2010174477 A JP 2010174477A JP 5519440 B2 JP5519440 B2 JP 5519440B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- fluorescent layer
- fluorescent
- light emitting
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3229—Cerium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/443—Nitrates or nitrites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5454—Particle size related information expressed by the size of the particles or aggregates thereof nanometer sized, i.e. below 100 nm
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/652—Reduction treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6582—Hydrogen containing atmosphere
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/762—Cubic symmetry, e.g. beta-SiC
- C04B2235/764—Garnet structure A3B2(CO4)3
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9653—Translucent or transparent ceramics other than alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9661—Colour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Description
1.第1蛍光層の作製
(1)蛍光層用粒子の作製
硝酸イットリウム六水和物14.345g(0.14981mol)、硝酸アルミニウム九水和物23.45g(0.25mol)、硝酸セリウム六水和物0.02g(0.00019mol)を250mlの蒸留水に溶解させ、0.4Mの前駆体溶液を調製した。
(2)蛍光層用粒子分散液の調製
得られた蛍光層用粒子4g、バインダー樹脂として、PVB(poly(vinyl butyral−co−vinyl alcohol−co−vinyl acetate)0.21g、焼結助剤として、シリカ粉末(Cabot Corporation社製)0.012g、溶媒として、メタノール10mlを、乳鉢により混合した。
(3)セラミックグリーン体の作製
得られた蛍光層用粒子分散液をドライヤーにて乾燥し、粉末を得た。この粉末140mgを13mmΦの一軸性プレスモールド型に充填し、油圧式プレス機にて約20kNで加圧することにより、厚み約350μmのディスク状のセラミックグリーン体を得た。
(4)セラミックグリーン体の焼成
得られたセラミックグリーン体を、アルミナ製管状電気炉にて、空気中、2℃/minの昇温速度で800℃まで加熱し、バインダー樹脂などの有機成分を分解除去する脱バインダー処理を実施した。
<第1蛍光層の全光線透過率の測定>
瞬間マルチ測光システム(大塚電子社製、MCPD 7000)と積分球とを具備した透過率測定ステージ(大塚電子社製)を、専用の光ファイバーを用いて接続し、波長380nmから1000nmの範囲で全光線透過率を測定した。
2.第2蛍光層の作製
作製例1
2.4gの熱硬化性シリコーンエラストマー樹脂(信越シリコーン社製、品番KER−2500)中に、0.6gの赤色ナイトライド蛍光体(CaAlSiN3:Eu、Intematix社製、品番R6535、発光ピーク波長640nm、平均粒子サイズ15.5μm)を添加した、蛍光体濃度20質量%の蛍光体分散液を作製した。蛍光体分散液を、厚さ80μmのPETフィルム上に、アプリケーターを用いて、塗工厚み約38μmで塗工し、加熱して半硬化状態として、第2蛍光層(CaAlSiN3:Eu Red powder(20wt%)と表記する。)を得た。
赤色ナイトライド蛍光体の配合量を1.292gとして、蛍光体濃度35質量%の蛍光体分散液を作製し、蛍光体分散液を、PETフィルム上に、塗工厚み約40μmで塗工した以外は、作製例1と同様にして、第2蛍光層(CaAlSiN3:Eu Red powder(35wt%)と表記する。)を得た。
2.4gの熱硬化性シリコーンエラストマー樹脂(信越シリコーン社製、品番KER−2500)中に、0.27gの赤色硫化物蛍光体(CaS:Eu、発光ピーク波長 nm、平均粒子サイズ11μm)を添加した、蛍光体濃度10質量%の蛍光体分散液を作製した。蛍光体分散液を、厚さ80μmのPETフィルム上に、アプリケーターを用いて、塗工厚み約45μmで塗工し、加熱して半硬化状態として、第2蛍光層(CaS:Eu Red powder(10wt%)と表記する。)を得た。
2.4gの熱硬化性シリコーンエラストマー樹脂(信越シリコーン社製、品番KER−2500)中に、3.6gの赤色フッ化物蛍光体(K2SiF6:Mn)を添加した、蛍光体濃度60質量%の蛍光体分散液を作製した。なお、K2SiF6:Mnは、Journal of Applied Physics(第104巻、023512(2008年))に記載の方法(シリコンウェハをHF/H2O/KMnO4溶液を用いてエッチングする方法)により合成した。蛍光体分散液を、厚さ80μmのPETフィルム上に、アプリケーターを用いて、塗工厚み約175μmで塗工し、加熱して半硬化状態として、第2蛍光層(K2SiF6:Mn Red powder(60wt%)と表記する。)を得た。
3.蛍光積層体の作製
各作製例の第2蛍光層上に、それぞれ第1蛍光層を貼り付け、100℃で1時間、その後、150℃で1時間加熱することで、シリコーンエラストマー樹脂を硬化させた。
4.評価用発光ダイオード素子の作製
実施例1
キャビティー付き多層セラミック基板(住友金属エレクトロデバイス社製、品番207806、外寸:3.5mm×2.8mm、キャビティー:長軸方向が2.68mm、短軸方向が1.98mm、高さ0.6mmtの略楕円形)のキャビティー内に、青色発光ダイオードチップ(クリー社製、品番C450EZ1000−0123、980μm×980μm×100μmt)をAu−Snはんだにてダイアタッチし、Au線にて発光ダイオードチップの電極から多層セラミック基板のリードフレームにワイヤボンディングすることで、青色発光ダイオードチップ1個を実装した発光ダイオードパッケージを作製した。
作製例2で得られた第2蛍光層が積層された蛍光積層体を、第2蛍光層を下側にしてキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
作製例3で得られた第2蛍光層が積層された蛍光積層体を、第2蛍光層を下側にしてキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
作製例4で得られた第2蛍光層が積層された蛍光積層体を、第2蛍光層を下側にしてキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
2.4gの熱硬化性シリコーンエラストマー樹脂(信越シリコーン社製、品番KER-2500)中に、3.6gの黄色YAG:Ce蛍光体粉末(Phosphor Tech社製、品番BYW01A、平均粒子径9μm)を添加した、蛍光体濃度60質量%の蛍光体分散液を作製した。この蛍光体分散液を、厚さ80μmのPETフィルム上に、アプリケーターを用いて、塗工厚み約45μmで塗工し、150℃にて1時間加熱して、YAG:Ce蛍光体が分散されたYAG粉末分散シートを、第1蛍光層として得た。
作製例1で得られた第2蛍光層が積層された蛍光積層体を、第2蛍光層を上側にしてキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
作製例2で得られた第2蛍光層が積層された蛍光積層体を、第2蛍光層を上側にしてキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
作製例3で得られた第2蛍光層が積層された蛍光積層体を、第2蛍光層を上側にしてキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
作製例4で得られた第2蛍光層が積層された蛍光積層体を、第2蛍光層を上側にしてキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
第1蛍光層のみをキャビティーの上に設置した以外は、実施例1と同様にして、発光装置を作製した。
5.評価
(1)発光装置の発光特性の測定
瞬間マルチ測光システム(大塚電子社製、MCPD 7000)と、内径が12インチの積分球とを、専用の光ファイバーで接続し、波長380nmから1000nmの範囲で、発光装置の発光スペクトルを測定した。
(2)蛍光積層体表面の温度測定
各実施例、各比較例および参考例で得られた発光装置の、発光ダイオードに1Aの電流を通電した際の蛍光積層体の温度を、赤外線カメラ(FLIR Systems社製、製品名Infrared Camera A325)を用いて測定した。結果を表1に示す。
2 回路基板
3 発光ダイオード
4 ハウジング
11 第1蛍光層
12 第2蛍光層
Claims (4)
- 外部から電力が供給される回路基板と、
前記回路基板の上に電気的に接合され、前記回路基板からの電力により発光する発光ダイオードと、
前記発光ダイオードを囲むように前記回路基板の上に設けられ、上端部が、前記発光ダイオードの上端部よりも上側に配置されるハウジングと、
前記ハウジングの上に設けられる蛍光積層体と
を備え、
前記ハウジングの中には、樹脂からなる封止材が満たされており、
前記蛍光積層体は、
蛍光を発光する第1蛍光層と、
前記第1蛍光層よりも長波長の蛍光を発光する第2蛍光層と
を備え、
前記第2蛍光層は、蛍光体が分散された樹脂からなり、前記ハウジングの上に配置され、
前記第1蛍光層は、蛍光体セラミックスからなり、前記第2蛍光層の上に積層され、
前記第2蛍光層の厚みは、200μm以下であり、
前記第2蛍光層中の前記蛍光体の割合は、前記蛍光体と前記樹脂との総量に対して、10〜70質量%である
ことを特徴とする、発光装置。 - 前記蛍光体は、赤色の蛍光を発光する赤色蛍光体であることを特徴とする、請求項1に記載の発光装置。
- 前記赤色蛍光体が、CaAlSiN3:Euであることを特徴とする、請求項2に記載の発光装置。
- 前記赤色蛍光体が、CaS:EuまたはK2MF6:Mn(Mは、Si、Ge、Sn、Tiのいずれかを表す。)であることを特徴とする、請求項2に記載の発光装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010174477A JP5519440B2 (ja) | 2010-08-03 | 2010-08-03 | 発光装置 |
CN201110196068.8A CN102384383B (zh) | 2010-08-03 | 2011-07-11 | 发光装置 |
US13/192,928 US8916893B2 (en) | 2010-08-03 | 2011-07-28 | Light-emitting device |
TW100126870A TWI518947B (zh) | 2010-08-03 | 2011-07-28 | 發光裝置 |
KR1020110076906A KR20120022597A (ko) | 2010-08-03 | 2011-08-02 | 발광 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010174477A JP5519440B2 (ja) | 2010-08-03 | 2010-08-03 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012038754A JP2012038754A (ja) | 2012-02-23 |
JP5519440B2 true JP5519440B2 (ja) | 2014-06-11 |
Family
ID=45555483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010174477A Active JP5519440B2 (ja) | 2010-08-03 | 2010-08-03 | 発光装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8916893B2 (ja) |
JP (1) | JP5519440B2 (ja) |
KR (1) | KR20120022597A (ja) |
CN (1) | CN102384383B (ja) |
TW (1) | TWI518947B (ja) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
KR101212654B1 (ko) * | 2011-05-20 | 2012-12-14 | (주)라이타이저코리아 | 발광 다이오드 패키지 및 그의 제조 방법 |
KR20130101684A (ko) | 2012-03-06 | 2013-09-16 | 현대자동차주식회사 | 차량용 서스펜션의 스프링 |
JP5840540B2 (ja) * | 2012-03-15 | 2016-01-06 | 株式会社東芝 | 白色照明装置 |
JP2013201274A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Lighting & Technology Corp | 照明装置 |
WO2013158929A1 (en) * | 2012-04-18 | 2013-10-24 | Nitto Denko Corporation | Phosphor ceramics and methods of making the same |
CN102721007A (zh) * | 2012-06-18 | 2012-10-10 | 南京汉德森科技股份有限公司 | 适用于led照明的远程荧光体结构及其制备方法 |
US9982189B2 (en) | 2012-12-28 | 2018-05-29 | Shin-Etsu Chemical Co., Ltd. | Wavelength conversion member and light-emitting device |
JP2014177511A (ja) * | 2013-03-13 | 2014-09-25 | Toshiba Corp | 蛍光体、およびその製造方法、ならびにその蛍光体を用いた発光装置 |
TWI527274B (zh) * | 2013-04-29 | 2016-03-21 | 新世紀光電股份有限公司 | 發光二極體封裝結構 |
CA2923187C (en) * | 2013-09-09 | 2022-04-12 | GE Lighting Solutions, LLC | Enhanced color-preference light sources |
JP6191453B2 (ja) * | 2013-12-27 | 2017-09-06 | 日亜化学工業株式会社 | 発光装置 |
CN103836543A (zh) * | 2014-03-21 | 2014-06-04 | 木林森股份有限公司 | 一种高光效高显色性led照明灯具 |
TWI469396B (zh) * | 2014-07-01 | 2015-01-11 | Unity Opto Technology Co Ltd | Applied to the backlight of the LED light-emitting structure |
KR101661807B1 (ko) * | 2014-07-28 | 2016-09-30 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
WO2016022707A1 (en) * | 2014-08-06 | 2016-02-11 | Cree, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
KR102261954B1 (ko) * | 2015-01-30 | 2021-06-08 | 엘지이노텍 주식회사 | 형광체 필름, 이를 포함하는 발광 소자 패키지 및 조명 장치 |
US20160380162A1 (en) * | 2015-06-26 | 2016-12-29 | Everlight Electronics Co., Ltd. | Light Emitting Device And Manufacturing Method Thereof |
WO2017001261A1 (en) * | 2015-07-02 | 2017-01-05 | Philips Lighting Holding B.V. | Led lamp with slow decay red phosphor resulting in cct variation with light output |
CN111028715A (zh) * | 2015-07-23 | 2020-04-17 | 首尔半导体株式会社 | 显示装置 |
JP6644081B2 (ja) * | 2015-11-04 | 2020-02-12 | シャープ株式会社 | 発光装置、照明装置、および発光装置が備える発光体の製造方法 |
US9879179B2 (en) | 2016-03-30 | 2018-01-30 | Nichia Corporation | Fluorescent material, light-emitting device, and method for producing fluorescent material |
CN106058016B (zh) * | 2016-07-27 | 2019-03-22 | 福建省德化县腾兴陶瓷有限公司 | 双层结构远程的荧光体、制备方法及远程led器件 |
US10535805B2 (en) | 2017-01-13 | 2020-01-14 | Intematix Corporation | Narrow-band red phosphors for LED lamps |
CN110412816B (zh) * | 2018-04-28 | 2021-08-17 | 中强光电股份有限公司 | 波长转换模块、波长转换模块的形成方法及投影装置 |
US20220011483A1 (en) * | 2018-12-27 | 2022-01-13 | Nippon Electric Glass Co., Ltd. | Wavelength conversion member and light emitting device |
JP2020106831A (ja) * | 2018-12-27 | 2020-07-09 | 日本電気硝子株式会社 | 波長変換部材及び発光装置 |
US11342311B2 (en) | 2019-03-18 | 2022-05-24 | Intematix Corporation | LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material |
US11781714B2 (en) | 2019-03-18 | 2023-10-10 | Bridgelux, Inc. | LED-filaments and LED-filament lamps |
EP3942607A1 (en) | 2019-03-18 | 2022-01-26 | Intematix Corporation | Led-filament |
JP7242894B2 (ja) * | 2019-03-18 | 2023-03-20 | インテマティックス・コーポレーション | 光ルミネセンス層状構造体を備えるパッケージ化された白色発光デバイス |
TWI702739B (zh) * | 2019-07-31 | 2020-08-21 | 台灣應用晶體股份有限公司 | 發光裝置及其製造方法 |
JP7335520B2 (ja) | 2021-06-21 | 2023-08-30 | 日亜化学工業株式会社 | 波長変換部材、発光装置及び画像表示装置 |
CN115895657A (zh) * | 2022-10-11 | 2023-04-04 | 中国计量大学 | 基于金属铝基介孔氧化铝制备的荧光发射层及其制备方法和应用 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006064930A1 (ja) * | 2004-12-17 | 2006-06-22 | Ube Industries, Ltd. | 光変換構造体およびそれを利用した発光装置 |
US7497973B2 (en) | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
JP2007036042A (ja) * | 2005-07-28 | 2007-02-08 | Sony Corp | 発光装置及び光学装置 |
JP2007173397A (ja) * | 2005-12-20 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた表示装置及び照明装置 |
JP4931628B2 (ja) * | 2006-03-09 | 2012-05-16 | セイコーインスツル株式会社 | 照明装置及びこれを備える表示装置 |
WO2007122531A2 (en) | 2006-04-25 | 2007-11-01 | Philips Intellectual Property & Standards Gmbh | Fluorescent lighting creating white light |
US7663152B2 (en) * | 2006-08-09 | 2010-02-16 | Philips Lumileds Lighting Company, Llc | Illumination device including wavelength converting element side holding heat sink |
KR101297405B1 (ko) * | 2006-12-26 | 2013-08-19 | 서울반도체 주식회사 | 유전체 다층막 반사 미러를 채택한 발광 소자 |
JP2008166782A (ja) * | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | 発光素子 |
US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
EP2128906B1 (en) | 2007-02-27 | 2016-11-30 | Kyocera Corporation | Light-emitting device |
EP2272102B1 (en) * | 2008-03-26 | 2016-06-22 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor light-emitting apparatus |
-
2010
- 2010-08-03 JP JP2010174477A patent/JP5519440B2/ja active Active
-
2011
- 2011-07-11 CN CN201110196068.8A patent/CN102384383B/zh not_active Expired - Fee Related
- 2011-07-28 TW TW100126870A patent/TWI518947B/zh not_active IP Right Cessation
- 2011-07-28 US US13/192,928 patent/US8916893B2/en not_active Expired - Fee Related
- 2011-08-02 KR KR1020110076906A patent/KR20120022597A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN102384383A (zh) | 2012-03-21 |
US20120032219A1 (en) | 2012-02-09 |
US8916893B2 (en) | 2014-12-23 |
JP2012038754A (ja) | 2012-02-23 |
KR20120022597A (ko) | 2012-03-12 |
CN102384383B (zh) | 2015-04-01 |
TW201208141A (en) | 2012-02-16 |
TWI518947B (zh) | 2016-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5519440B2 (ja) | 発光装置 | |
US8664678B2 (en) | Phosphor ceramic and light-emitting device | |
JP5566785B2 (ja) | 複合シート | |
JP5486431B2 (ja) | 発光装置用部品、発光装置およびその製造方法 | |
JP2012039031A (ja) | 発光装置 | |
JP5833547B2 (ja) | 発光セラミックおよびそれを使用する発光装置 | |
JP5701523B2 (ja) | 半導体発光装置 | |
JP4417906B2 (ja) | 発光装置及びその製造方法 | |
JP5076017B2 (ja) | 発光装置 | |
US20120012875A1 (en) | Component for light-emitting device, light-emitting device and producing method thereof | |
JP2010509764A (ja) | モノリシックセラミック発光変換体を含む照明システム | |
WO2004081140A1 (ja) | 発光膜、発光装置、発光膜の製造方法および発光装置の製造方法 | |
JP2005123560A (ja) | 発光装置およびその形成方法 | |
JP2013526078A5 (ja) | ||
TW201725763A (zh) | 發光裝置及其製造方法 | |
KR20170118726A (ko) | 형광체 세라믹스, 봉지 광반도체 소자, 회로 기판, 광반도체 장치 및 발광 장치 | |
JP2012169653A (ja) | 発光装置の製造方法 | |
TWI660526B (zh) | 發光元件、發光裝置及彼等之製造方法 | |
JP2022007638A (ja) | 成形体、発光装置及び成形体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121126 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130710 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140114 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140228 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140318 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140403 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5519440 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |