JP2013197587A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2013197587A JP2013197587A JP2013040346A JP2013040346A JP2013197587A JP 2013197587 A JP2013197587 A JP 2013197587A JP 2013040346 A JP2013040346 A JP 2013040346A JP 2013040346 A JP2013040346 A JP 2013040346A JP 2013197587 A JP2013197587 A JP 2013197587A
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- 239000000758 substrate Substances 0.000 claims abstract description 281
- 239000004065 semiconductor Substances 0.000 claims abstract description 185
- 239000012535 impurity Substances 0.000 claims abstract description 71
- 230000005684 electric field Effects 0.000 claims description 49
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000005452 bending Methods 0.000 abstract description 17
- 230000001965 increasing effect Effects 0.000 abstract description 16
- 238000009825 accumulation Methods 0.000 abstract description 2
- 230000002829 reductive effect Effects 0.000 description 20
- 230000007423 decrease Effects 0.000 description 14
- 230000007547 defect Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000000969 carrier Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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Abstract
【解決手段】このような太陽電池は、第1導電型を有する半導体基板と、第1導電型と異なる第2導電型を有し、半導体基板の第1面に位置するエミッタ部と半導体基板の第1面の反対側に位置する半導体基板の第2面上に直接位置して半導体基板の第2面側に電荷蓄積層を形成し、第1導電型を有する不純物を含有した半導体層と半導体基板の第1面に位置しエミッタ部と接続された第1電極と、半導体基板の第2面に位置し半導体基板と接続された第2電極を含む。これにより、半導体基板内の不純物ドーピング濃度を増加させずに、半導体基板上に半導体基板と同一の導電型の不純物を含有した半導体層が位置するので、基板と半導体層の間のエネルギーバンドベンディング(energy band bending)により、半導体基板から第2電極への電荷移動が容易に行われる。これにより、太陽電池の効率が向上する。
【選択図】図3
Description
Claims (20)
- 第1導電型を有する半導体基板と、
前記第1導電型と異なる第2導電型を有し前記半導体基板の第1面に位置するエミッタ部と、
前記半導体基板の第1面の反対側に位置する前記半導体基板の第2面上に直接位置し前記半導体基板の前記第2面側に電荷蓄積層を形成し、前記第1導電型を有する不純物を含有した半導体層と、
前記半導体基板の前記第1面に位置し前記のエミッタ部と接続された第1電極と、
前記半導体基板の前記第2面に位置し前記半導体基板と接続された第2電極を含む、太陽電池。 - 前記半導体層に含有された前記不純物の含有量は、1×1018/cm3〜5×1020/cm3である、請求項1記載の太陽電池。
- 前記半導体層は、炭化ケイ素(SiC)から形成されている、請求項2記載の太陽電池。
- 前記第2電極と接している前記基板の前記第2面に位置し、前記第1導電型を有する電界部をさらに含む、請求項1記載の太陽電池。
- 前記半導体基板は、結晶質半導体から形成され、前記のエミッタ部は結晶質半導体から形成されている、請求項1記載の太陽電池。
- 前記半導体基板は、結晶質半導体から形成され、前記のエミッタ部は非晶質シリコンから形成されている、請求項1記載の太陽電池。
- 前記エミッタ部は炭化ケイ素から形成されている、請求項1記載の太陽電池。
- 前記エミッタ部と前記第1電極の間に透明な導電性物質から形成されている反射防止部をさらに含む、請求項7記載の太陽電池。
- 前記エミッタ部は非晶質シリコンから形成されている、請求項1記載の太陽電池。
- 前記第1電極が接する前記基板の前記第1面に、前記エミッタ部よりも高い濃度で前記第2導電型の不純物を含有した高濃度ドーピング部をさらに含む、請求項9記載の太陽電池。
- 前記エミッタ部と前記半導体基板との間に保護部をさらに含む、請求項7記載の太陽電池。
- 前記エミッタ部の上に位置する反射防止部をさらに含む、請求項1記載の太陽電池。
- 前記第1導電型はn型であり、前記第2導電型はp型である、請求項12記載の太陽電池。
- 前記反射防止部は酸化アルミニウムから形成される第1反射防止膜と窒化シリコンから形成される第2反射防止膜を含む、請求項13記載の太陽電池。
- 第1導電型を有する半導体基板と
前記第1導電型と異なる第2導電型を有し、前記半導体基板の第1面に位置し前記半導体基板の前記第1面側に電荷蓄積層を形成するエミッタ部と
前記半導体基板の前記第1面に位置し前記のエミッタ部と接続された第1電極と、
前記半導体基板の前記第2面に位置し前記半導体基板と接続された第2電極を含む、太陽電池。 - 前記エミッタ部は炭化ケイ素から形成されている、請求項15記載の太陽電池。
- 前記エミッタ部と前記第1電極の間に透明な導電性物質から形成されている反射防止部をさらに含む、請求項16記載の太陽電池。
- 前記エミッタ部は非晶質炭化ケイ素から形成されている、請求項15記載の太陽電池。
- 前記第1電極が接する前記基板の前記第1面に、前記エミッタ部より高い濃度で前記第2導電型の不純物を含有した高濃度ドーピング部をさらに含む、請求項18記載の太陽電池。
- 前記エミッタ部と前記半導体基板との間に保護部をさらに含む、請求項16記載の太陽電池。
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KR1020120027678A KR101918737B1 (ko) | 2012-03-19 | 2012-03-19 | 태양 전지 |
KR10-2012-0027678 | 2012-03-19 |
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JP2013197587A true JP2013197587A (ja) | 2013-09-30 |
JP5567706B2 JP5567706B2 (ja) | 2014-08-06 |
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US (1) | US10141457B2 (ja) |
EP (1) | EP2642525B1 (ja) |
JP (1) | JP5567706B2 (ja) |
KR (1) | KR101918737B1 (ja) |
CN (1) | CN103325860B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160052267A (ko) * | 2014-11-04 | 2016-05-12 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
JP2021516873A (ja) * | 2018-11-27 | 2021-07-08 | チンアオ ソーラー カンパニー リミテッド | 結晶シリコン太陽電池及びその製造方法、太陽光発電モジュール |
JP7170817B1 (ja) | 2021-09-10 | 2022-11-14 | 上海晶科緑能企業管理有限公司 | 太陽電池およびその製造方法、光起電力モジュール |
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EP2642525A2 (en) | 2013-09-25 |
CN103325860A (zh) | 2013-09-25 |
US10141457B2 (en) | 2018-11-27 |
CN103325860B (zh) | 2016-06-01 |
EP2642525B1 (en) | 2019-12-18 |
JP5567706B2 (ja) | 2014-08-06 |
KR20130106063A (ko) | 2013-09-27 |
US20130240031A1 (en) | 2013-09-19 |
EP2642525A3 (en) | 2017-03-29 |
KR101918737B1 (ko) | 2019-02-08 |
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