JPS55141765A - Amorphous silicon solar battery - Google Patents

Amorphous silicon solar battery

Info

Publication number
JPS55141765A
JPS55141765A JP16264979A JP16264979A JPS55141765A JP S55141765 A JPS55141765 A JP S55141765A JP 16264979 A JP16264979 A JP 16264979A JP 16264979 A JP16264979 A JP 16264979A JP S55141765 A JPS55141765 A JP S55141765A
Authority
JP
Japan
Prior art keywords
amorphous silicon
solar battery
silicon solar
battery
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16264979A
Other languages
Japanese (ja)
Other versions
JPS6333308B2 (en
Inventor
Jiyon Hanatsuku Jiyosefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS55141765A publication Critical patent/JPS55141765A/en
Publication of JPS6333308B2 publication Critical patent/JPS6333308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
JP16264979A 1979-04-19 1979-12-13 Amorphous silicon solar battery Granted JPS55141765A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3146079A 1979-04-19 1979-04-19

Publications (2)

Publication Number Publication Date
JPS55141765A true JPS55141765A (en) 1980-11-05
JPS6333308B2 JPS6333308B2 (en) 1988-07-05

Family

ID=21859579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16264979A Granted JPS55141765A (en) 1979-04-19 1979-12-13 Amorphous silicon solar battery

Country Status (6)

Country Link
JP (1) JPS55141765A (en)
DE (1) DE2950085A1 (en)
FR (1) FR2454705B1 (en)
GB (1) GB2047463B (en)
IT (1) IT1194594B (en)
MY (1) MY8500782A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233869A (en) * 1984-02-15 1985-11-20 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Semiconductor device and method of producing same
JPS60250681A (en) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Random multilayer semiconductor structure
US4737196A (en) * 1984-10-29 1988-04-12 Mitsubishi Denki Kabushiki Kaisha Amorphous solar cell
JPS63100858U (en) * 1986-12-19 1988-06-30
JP2013197587A (en) * 2012-03-19 2013-09-30 Lg Electronics Inc Solar cell

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464564A1 (en) * 1979-08-28 1981-03-06 Rca Corp AMORPHOUS SILICON SOLAR BATTERY
ZA849070B (en) * 1983-12-07 1985-07-31 Energy Conversion Devices Inc Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures
JPS6132481A (en) * 1984-07-24 1986-02-15 Sharp Corp Amorphous semiconductor element
JPS6177375A (en) * 1984-09-21 1986-04-19 Sharp Corp Color sensor
US20080135083A1 (en) * 2006-12-08 2008-06-12 Higher Way Electronic Co., Ltd. Cascade solar cell with amorphous silicon-based solar cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111180A (en) * 1979-02-19 1980-08-27 Sharp Corp Thin-film solar battery of high output voltage

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1129220A (en) * 1955-07-25 1957-01-17 High efficiency photovoltaic cells
IL48996A (en) * 1975-02-27 1977-08-31 Varian Associates Photovoltaic cells
DE2514013A1 (en) * 1975-03-29 1976-10-07 Licentia Gmbh Radiation sensitive semiconductor element - has tunnel zone surrounded by semiconductor layers as wave guide for impinging radiation
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS531483A (en) * 1976-06-28 1978-01-09 Futaba Denshi Kogyo Kk Pn junction solar battery and method of producing same
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111180A (en) * 1979-02-19 1980-08-27 Sharp Corp Thin-film solar battery of high output voltage

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233869A (en) * 1984-02-15 1985-11-20 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Semiconductor device and method of producing same
JPS60250681A (en) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Random multilayer semiconductor structure
US4737196A (en) * 1984-10-29 1988-04-12 Mitsubishi Denki Kabushiki Kaisha Amorphous solar cell
JPS63100858U (en) * 1986-12-19 1988-06-30
JP2013197587A (en) * 2012-03-19 2013-09-30 Lg Electronics Inc Solar cell
US10141457B2 (en) 2012-03-19 2018-11-27 Lg Electronics Inc. Solar cell

Also Published As

Publication number Publication date
GB2047463A (en) 1980-11-26
IT1194594B (en) 1988-09-22
FR2454705A1 (en) 1980-11-14
GB2047463B (en) 1983-06-15
IT7927500A0 (en) 1979-11-22
JPS6333308B2 (en) 1988-07-05
FR2454705B1 (en) 1986-06-20
DE2950085A1 (en) 1980-10-30
DE2950085C2 (en) 1992-01-23
MY8500782A (en) 1985-12-31

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