FR2711276B1 - Cellule photovoltaïque et procédé de fabrication d'une telle cellule. - Google Patents

Cellule photovoltaïque et procédé de fabrication d'une telle cellule.

Info

Publication number
FR2711276B1
FR2711276B1 FR9312246A FR9312246A FR2711276B1 FR 2711276 B1 FR2711276 B1 FR 2711276B1 FR 9312246 A FR9312246 A FR 9312246A FR 9312246 A FR9312246 A FR 9312246A FR 2711276 B1 FR2711276 B1 FR 2711276B1
Authority
FR
France
Prior art keywords
layer
pct
cell
conductivity type
date
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9312246A
Other languages
English (en)
Other versions
FR2711276A1 (fr
Inventor
Herbert Keppner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Neuchatel
Original Assignee
Universite de Neuchatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite de Neuchatel filed Critical Universite de Neuchatel
Priority to FR9312246A priority Critical patent/FR2711276B1/fr
Priority to EP94926766A priority patent/EP0673549A1/fr
Priority to PCT/CH1994/000192 priority patent/WO1995010856A1/fr
Priority to AU76506/94A priority patent/AU7650694A/en
Priority to JP7511140A priority patent/JPH08508368A/ja
Priority to US08/446,628 priority patent/US5589008A/en
Publication of FR2711276A1 publication Critical patent/FR2711276A1/fr
Application granted granted Critical
Publication of FR2711276B1 publication Critical patent/FR2711276B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
FR9312246A 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule. Expired - Fee Related FR2711276B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9312246A FR2711276B1 (fr) 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule.
EP94926766A EP0673549A1 (fr) 1993-10-11 1994-09-27 Cellule photovoltaique et procede de fabrication d'une telle cellule
PCT/CH1994/000192 WO1995010856A1 (fr) 1993-10-11 1994-09-27 Cellule photovoltaique et procede de fabrication d'une telle cellule
AU76506/94A AU7650694A (en) 1993-10-11 1994-09-27 Photovoltaic cell and method for fabrication of said cell
JP7511140A JPH08508368A (ja) 1993-10-11 1994-09-27 光電池および光電池を製造するための方法
US08/446,628 US5589008A (en) 1993-10-11 1994-09-27 Photovoltaic cell and method for fabrication of said cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9312246A FR2711276B1 (fr) 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule.

Publications (2)

Publication Number Publication Date
FR2711276A1 FR2711276A1 (fr) 1995-04-21
FR2711276B1 true FR2711276B1 (fr) 1995-12-01

Family

ID=9451834

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9312246A Expired - Fee Related FR2711276B1 (fr) 1993-10-11 1993-10-11 Cellule photovoltaïque et procédé de fabrication d'une telle cellule.

Country Status (6)

Country Link
US (1) US5589008A (fr)
EP (1) EP0673549A1 (fr)
JP (1) JPH08508368A (fr)
AU (1) AU7650694A (fr)
FR (1) FR2711276B1 (fr)
WO (1) WO1995010856A1 (fr)

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US6339013B1 (en) 1997-05-13 2002-01-15 The Board Of Trustees Of The University Of Arkansas Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells
DE19743692A1 (de) * 1997-10-02 1999-04-08 Zae Bayern Multifunktionsschicht zur Verbesserung des Wirkungsgrades von kristallinen Dünnschicht Silizium Solarzellen
ES2149126B1 (es) * 1999-01-11 2001-05-16 Univ Pais Vasco Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica.
JP2001189478A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
US6787692B2 (en) 2000-10-31 2004-09-07 National Institute Of Advanced Industrial Science & Technology Solar cell substrate, thin-film solar cell, and multi-junction thin-film solar cell
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
US6750394B2 (en) * 2001-01-12 2004-06-15 Sharp Kabushiki Kaisha Thin-film solar cell and its manufacturing method
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP2003298077A (ja) * 2002-03-29 2003-10-17 Ebara Corp 太陽電池
CN2550906Y (zh) * 2002-05-27 2003-05-14 李映华 立体光双面结光电池
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US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
EP2439780B1 (fr) * 2005-02-25 2019-10-02 Panasonic Intellectual Property Management Co., Ltd. Cellule photovoltaïque
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JPH0795603B2 (ja) * 1990-09-20 1995-10-11 三洋電機株式会社 光起電力装置
JP2994735B2 (ja) * 1990-11-27 1999-12-27 シャープ株式会社 太陽電池

Also Published As

Publication number Publication date
EP0673549A1 (fr) 1995-09-27
AU7650694A (en) 1995-05-04
US5589008A (en) 1996-12-31
JPH08508368A (ja) 1996-09-03
WO1995010856A1 (fr) 1995-04-20
FR2711276A1 (fr) 1995-04-21

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