JP2013527598A - 高められた電磁放射線検出を有するデバイス及び関連方法 - Google Patents
高められた電磁放射線検出を有するデバイス及び関連方法 Download PDFInfo
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- JP2013527598A JP2013527598A JP2013501401A JP2013501401A JP2013527598A JP 2013527598 A JP2013527598 A JP 2013527598A JP 2013501401 A JP2013501401 A JP 2013501401A JP 2013501401 A JP2013501401 A JP 2013501401A JP 2013527598 A JP2013527598 A JP 2013527598A
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Classifications
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
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- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Abstract
【解決手段】 感光性半導体デバイス及び関連する方法を呈する。一態様において、半導体デバイスは、半導体基板、及びこの半導体基板に結合された半導体層を含むことができ、半導体層は、半導体基板の反対側のデバイス表面を有する。デバイスはまた、半導体基板と半導体層との間に結合された少なくとも1つの非平滑化領域を含む。別の態様において、デバイスは半導体基板と半導体層との間に結合された少なくとも1つの誘電体層を更に含む。
【選択図】 図2A
Description
以下の用語は、下記で説明される定義に従って使用される。
本発明は、例えば増強した光検出特性など、様々な高められた特性を呈することができる半導体デバイス及び関連方法を呈する。追加として、本発明は、イメージセンサ及び光検出器の向上となる非平滑化された半導体材料の製造及び適用に関する統合的アプローチを呈する。具体的なタイプの半導体の非平滑化は、半導体材料のスペクトルバンド幅、吸収、及び量子効率を高めることができる。性能はまた、様々な構造設定を通じて高めることができる。そのような設定はまた、特定のデバイスプロセス構造と、例えば従来のCMOSプロセスフローなどの従来のプロセスフローとの統合を著しく改善することができる。
Claims (38)
- 半導体デバイスであって、
半導体基板、
前記半導体基板に結合され、前記半導体基板の反対側のデバイス表面を有する半導体層、及び
前記半導体基板と前記半導体層との間に結合された少なくとも1つの非平滑化領域、を含む、半導体デバイス。 - 前記半導体基板と前記半導体層との間に結合された少なくとも1つの誘電体層を更に含む、請求項1に記載のデバイス。
- 前記半導体層がエピタキシャル成長させた半導体層である、請求項2に記載のデバイス。
- 前記半導体層がシリコン層である、請求項2に記載のデバイス。
- 前記非平滑化領域と前記半導体層との間に配置された第2半導体層を更に含む、請求項2に記載のデバイス。
- 前記誘電体層が前記半導体基板と前記非平滑化領域との間に結合され、前記非平滑化領域が、前記誘電体層と前記半導体層との間に配置される、請求項2に記載のデバイス。
- 前記半導体基板と前記非平滑化領域との間に配置された反射領域を更に含む、請求項6に記載のデバイス。
- 前記非平滑化領域が、前記半導体層に直接結合される、請求項6に記載のデバイス。
- 前記非平滑化領域と前記半導体層との間に配置された第2半導体層を更に含む、請求項6に記載のデバイス。
- 前記非平滑化領域と前記誘電体層との間に配置された少なくとも1つのキャビティ領域を更に含む、請求項6に記載のデバイス。
- 前記誘電体層に直接結合されたポリシリコン層を更に含む、請求項2に記載のデバイス。
- 前記ポリシリコン層が、複数の誘電体層の間に配置される、請求項11に記載のデバイス。
- 前記非平滑化領域が、前記半導体基板と前記誘電体層との間に配置され、前記誘電体層が前記非平滑化領域と前記半導体層との間に配置される、請求項2に記載のデバイス。
- 前記非平滑化領域が、裏面電界を形成するためにドーパントでドーピングされる、請求項2に記載のデバイス。
- 前記裏面電界が、レーザードーピング、イオン注入、拡散ドーピング、in situドーピング、及びこれらの組み合わせからなる群から選択される技術によってドーピングされている、請求項14に記載のデバイス。
- 前記非平滑化領域が、前記半導体層よりも高いドーパント濃度を有する、請求項15に記載のデバイス。
- 前記ドーパントが、前記半導体層と同じ極性を有する、請求項15に記載のデバイス。
- 前記ドーパントが、ホウ素、インジウム、ガリウム、ヒ素、アンチモン、リン、及びこれらの組み合わせからなる群から選択される、請求項15に記載のデバイス。
- 前記半導体層が、裏面電界を形成するためにドーパントでドーピングされ、前記裏面電界が前記非平滑化領域とは別個である、請求項2に記載のデバイス。
- 前記デバイス表面上に配置された少なくとも1つの、フォトダイオードの光学的活性領域を更に含む、請求項2に記載のデバイス。
- 前記フォトダイオードの光学的活性領域がドーピングされた領域を含む、請求項2に記載のデバイス。
- 前記デバイスが、少なくとも1つの光検出器を形成する、請求項2に記載のデバイス。
- 前記少なくとも1つの光検出器が、アレイに配置される、請求項22に記載のデバイス。
- 前記非平滑化領域が、前記検出器のアレイに空間的に一致する不連続パターンに配置される、請求項23に記載のデバイス。
- 少なくとも前記半導体層で複数の分離形状を更に含み、前記光検出器のアレイにおいて各光検出器を分離し、前記分離形状は各光検出器を電気的、光学的、又は電気的及び光学的の両方で分離する、請求項23に記載のデバイス。
- 前記少なくとも1つの光検出器と結合されている少なくとも1つの光学レンズを更に含む、請求項23に記載のデバイス。
- 前記少なくとも1つの光検出器と結合されている少なくとも1つのカラーフィルタを更に含む、請求項23に記載のデバイス。
- 半導体デバイスの作製方法であって、
半導体層の表面の少なくとも一部分を非平滑化して、非平滑化領域を形成することと、
前記非平滑化領域が前記半導体層と第1誘電体層との間に配置されるように、前記第1誘電体層を前記半導体層上に堆積することと、
前記第1誘電体層を、半導体基板上に配置された第2誘電体層にウエハー接合することと、を含む、作製方法。 - 前記半導体層がエピタキシャル成長させた半導体層である、請求項28に記載の方法。
- 前記半導体層の表面の少なくとも一部分を非平滑化して、非平滑化領域を形成することが、
成長基板上にエピタキシャル成長させた半導体層を形成することと、
前記エピタキシャル成長させた半導体層の表面の少なくとも一部分を非平滑化して、非平滑化領域を形成することと、を更に含む、請求項29に記載の方法。 - 前記成長基板を取り除いて前記エピタキシャル成長させた半導体層を露出させることを更に含む、請求項30に記載の方法。
- 前記非平滑化領域の反対側上の前記半導体層上に、エピタキシャル成長させた半導体層を形成することを更に含む、請求項28に記載の方法。
- 前記ウエハー接合することが、
前記第1誘電体層上にポリシリコン層を堆積することと、
前記第1誘電体層と前記第2誘電体層との間で前記ポリシリコン層を接合することと、を更に含む、請求項28に記載の方法。 - 前記ポリシリコン層の少なくとも一部分をドーピングすることを更に含む、請求項33に記載の方法。
- 前記半導体層の表面の少なくとも一部分を非平滑化して、前記平滑化領域を形成することが、
前記半導体基板、前記第2誘電体層、及び前記第1誘電体層に開口部を形成して、前記半導体層の一部分を露出することと、
前記半導体層の前記露出させた部分の少なくとも一部分を非平滑化して、非平滑化領域を形成することと、を更に含む、請求項28に記載の方法。 - 前記非平滑化することが、プラズマエッチング、反応性イオンエッチング、多孔質シリコンエッチング、レーザー処理、化学エッチング、ナノインプリント、材料の堆積、選択的エピタキシャル成長、及びこれらの組み合わせを含む、請求項28に記載の方法。
- 前記非平滑化することが、レーザー処理を含む、請求項28に記載の方法。
- 半導体デバイスの製造中に、非平滑化領域を汚染から守る方法であって、
半導体層の表面の少なくとも一部分を非平滑化して、非平滑化領域を形成することと、
前記非平滑化領域が前記半導体層と第1誘電体層との間に配置されるように、前記第1誘電体層を前記半導体層上に堆積することと、
前記第1誘電体層を、半導体基板上に配置された第2誘電体層にウエハー接合することと、を含み、前記非平滑化領域が前記半導体層及び前記半導体基板により、更なる製造プロセス中の汚染から保護される、方法。
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KR101028085B1 (ko) * | 2008-02-19 | 2011-04-08 | 엘지전자 주식회사 | 비대칭 웨이퍼의 식각방법, 비대칭 식각의 웨이퍼를포함하는 태양전지, 및 태양전지의 제조방법 |
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-
2011
- 2011-03-22 CN CN2011800246716A patent/CN102947953A/zh active Pending
- 2011-03-22 JP JP2013501401A patent/JP2013527598A/ja active Pending
- 2011-03-22 WO PCT/US2011/029447 patent/WO2011119618A2/en active Application Filing
- 2011-03-22 US US13/069,135 patent/US20120068289A1/en not_active Abandoned
- 2011-03-22 EP EP11760079.1A patent/EP2550683A4/en not_active Ceased
- 2011-03-23 TW TW100109905A patent/TWI577033B/zh active
- 2011-03-23 TW TW105144227A patent/TWI639243B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016197733A (ja) * | 2009-09-17 | 2016-11-24 | サイオニクス、エルエルシー | 感光撮像素子および関連方法 |
Also Published As
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US20120068289A1 (en) | 2012-03-22 |
EP2550683A4 (en) | 2016-10-05 |
TW201222830A (en) | 2012-06-01 |
TWI577033B (zh) | 2017-04-01 |
TW201731118A (zh) | 2017-09-01 |
WO2011119618A2 (en) | 2011-09-29 |
WO2011119618A3 (en) | 2012-01-19 |
TWI639243B (zh) | 2018-10-21 |
EP2550683A2 (en) | 2013-01-30 |
CN102947953A (zh) | 2013-02-27 |
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