JP4304638B2 - Cis系太陽電池及びその製造方法 - Google Patents
Cis系太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 124
- 229910045601 alloy Inorganic materials 0.000 claims description 97
- 239000000956 alloy Substances 0.000 claims description 97
- 230000031700 light absorption Effects 0.000 claims description 79
- 238000005323 electroforming Methods 0.000 claims description 26
- 229910052750 molybdenum Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 105
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 33
- 239000010408 film Substances 0.000 description 22
- 239000000203 mixture Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 7
- 239000008151 electrolyte solution Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910003296 Ni-Mo Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 5
- 229910052951 chalcopyrite Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 chalcopyrite compound Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910017313 Mo—Co Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
以下、図4を参照して本発明の第1の実施形態によるCIS系太陽電池31の構造を説明する。このCIS系太陽電池31は、電鋳法によって作製された合金基板32の上にCIGS、CIGSS、CIS等のCIS系(カルコパイライト化合物系)の光吸収層33を形成し、さらにその上にバッファ層34を介して透明な上部電極35を設けたものである。また、上部電極35の上面には一対の取出し電極36を有している。典型的な一例を挙げると、合金基板32はNiとMoの合金であって、50μm程度の厚みを有している。光吸収層33は、CIGSによって2μm〜3μmの厚みに形成されている。バッファ層34は、CdS等によって厚みが0.05μm(50nm)〜0.1μm(100nm)に形成されている。上部電極35は、ZnO等によって厚みが0.6μm(600nm)に形成されている。
つぎに、本発明にかかる第2の実施形態を説明する。CIS系太陽電池の構造については第1の実施形態と同じであるので、図示及び説明を省略する。
図10は本発明の第3の実施形態によるCIS系太陽電池で用いられる合金基板32を示す斜視図である。この合金基板32では、図10に示すように、合金基板32の上面に微細な三角形溝状の凹凸形状37を設けている。このような三角形溝状の凹凸形状37でも、光を散乱させてCIS系太陽電池の変換効率を向上させることができる。
図11は本発明の第4の実施形態によるCIS系太陽電池の構造を示す断面図である。この実施形態では、凹凸形状37が、矩形状の凸部または凹部によって構成されている。あるいは、矩形溝状の凹凸形状37であってもよい。この場合も、凹凸形状37は同じ形状のものを一定ピッチで配列していてもよく、同じ形状のものをランダムに配置していてもよく、異なる形状のものをランダムに形成していてもよい。このような凹凸形状37では、光を散乱させる効果は低いが、光吸収層33と合金基板32の剥離を防止する効果がある。
32 合金基板
33 光吸収層
34 バッファ層
35 上部電極
36 取出し電極
37 凹凸形状
39 母型
40 反転形状
Claims (6)
- 上面に凹凸形状を有する基板と、光を吸収するための光吸収層と、前記光吸収層の上方に配置された上部電極とを有し、
前記光吸収層は、前記凹凸形状に接して前記基板上に形成されており、前記基板は下部電極として機能するCIS系太陽電池において、
前記基板は、MoとNiまたはCoとの合金により形成され、下面側から前記光吸収層と接する上面へ向かうにつれてMoの濃度が大きくなるように形成されていることを特徴とするCIS系太陽電池。 - 前記凹凸形状は、ピラミッド形状をした凹部または凸部によって構成されていることを特徴とする、請求項1に記載のCIS系太陽電池。
- 前記ピラミッド形状の頂角が110°であることを特徴とする、請求項2に記載のCIS系太陽電池。
- 前記凹凸形状の高さが、前記光吸収層の厚さの半分以下であることを特徴とする、請求項1に記載のCIS系太陽電池。
- 前記基板が電鋳法により作製されていることを特徴とする、請求項1に記載のCIS系太陽電池。
- 請求項1に記載したCIS系太陽電池の製造方法であって、
前記凹凸形状の反転形状が形成された母型に電鋳を行って前記母型の上面にMoとNiまたはCoとの合金からなる基板材料を堆積させる工程と、
前記母型の上面に形成された基板から前記母型を取り除くことにより、上面に前記凹凸形状を有し、かつ、下面側から上面へ向かうにつれてMoの濃度が大きくなった基板を作製する工程と、
前記基板の上面に前記光吸収層を形成する工程と、
前記光吸収層の上方に上部電極を形成する工程と、
を備えたCIS系太陽電池の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007184196A JP4304638B2 (ja) | 2007-07-13 | 2007-07-13 | Cis系太陽電池及びその製造方法 |
ES201090002A ES2398885B1 (es) | 2007-07-13 | 2008-07-14 | Celda solar cis y procedimiento de fabricación de la misma. |
PCT/JP2008/062695 WO2009011333A1 (ja) | 2007-07-13 | 2008-07-14 | Cis系太陽電池及びその製造方法 |
US12/668,668 US8575476B2 (en) | 2007-07-13 | 2008-07-14 | CIS solar cell and method for manufacturing the same |
CN2008800244935A CN101743641B (zh) | 2007-07-13 | 2008-07-14 | Cis系太阳能电池及其制造方法 |
DE112008001828T DE112008001828T5 (de) | 2007-07-13 | 2008-07-14 | CIS-Solarzelle und Verfahren zu deren Herstellung |
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JP (1) | JP4304638B2 (ja) |
CN (1) | CN101743641B (ja) |
DE (1) | DE112008001828T5 (ja) |
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- 2008-07-14 US US12/668,668 patent/US8575476B2/en active Active
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JP2009021479A (ja) | 2009-01-29 |
ES2398885B1 (es) | 2013-12-12 |
US20100269906A1 (en) | 2010-10-28 |
US8575476B2 (en) | 2013-11-05 |
CN101743641A (zh) | 2010-06-16 |
ES2398885A1 (es) | 2013-03-22 |
DE112008001828T5 (de) | 2010-06-10 |
CN101743641B (zh) | 2012-01-11 |
WO2009011333A1 (ja) | 2009-01-22 |
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