ES8406798A1 - Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas - Google Patents

Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas

Info

Publication number
ES8406798A1
ES8406798A1 ES524740A ES524740A ES8406798A1 ES 8406798 A1 ES8406798 A1 ES 8406798A1 ES 524740 A ES524740 A ES 524740A ES 524740 A ES524740 A ES 524740A ES 8406798 A1 ES8406798 A1 ES 8406798A1
Authority
ES
Spain
Prior art keywords
layer
photovoltaic device
textured
suitably
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES524740A
Other languages
English (en)
Other versions
ES524740A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of ES8406798A1 publication Critical patent/ES8406798A1/es
Publication of ES524740A0 publication Critical patent/ES524740A0/es
Granted legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/225—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption for spectrally selective absorption
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S70/00—Details of absorbing elements
    • F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
    • F24S70/25—Coatings made of metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

METODO PARA PRODUCIR UN DISPOSITIVO SEMICONDUCTOR FOTOVOLTAICO DE PELICULA DELGADA CON PROPIEDADES OPTICAS MEJORADAS.COMPRENDE: A) PRODUCIR UNA CAPA ACTIVA DE MATERIAL SEMICONDUCTOR EN DONDE LA SUPERFICIE DE AL MENOS UNA CARA DE DICHA CAPA ACTIVA ESTA TEXTURADA DE TAL MODO QUE LA SUPERFICIE INCLUYE MICROESTRUCTURAS ALEATORIAMENTE ESPACIADAS Y DENSAMENTE AGRUPADAS DE DIMENSIONES PREDETERMINADAS DEL ORDEN DE LA LONGITUD DE ONDA DE LA LUZ VISIBLE EN EL MATERIAL SEMICONDUCTOR; Y B) FIJAR DIRECTAMENTE UNA SUPERFICIE REFLECTANTE A UNA DE LAS CARAS DE DICHO MATERIALSEMICONDUCTOR Y ESTABLECER UN CONTACTO OHMICO CON EL MATERIAL.
ES524740A 1982-08-04 1983-08-04 Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas Granted ES524740A0 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40507582A 1982-08-04 1982-08-04
US40507282A 1982-08-04 1982-08-04

Publications (2)

Publication Number Publication Date
ES8406798A1 true ES8406798A1 (es) 1984-08-01
ES524740A0 ES524740A0 (es) 1984-08-01

Family

ID=27018915

Family Applications (1)

Application Number Title Priority Date Filing Date
ES524740A Granted ES524740A0 (es) 1982-08-04 1983-08-04 Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas

Country Status (4)

Country Link
EP (1) EP0102204A1 (es)
AU (1) AU1757283A (es)
CA (1) CA1209681A (es)
ES (1) ES524740A0 (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
JPS6034076A (ja) * 1983-08-05 1985-02-21 Taiyo Yuden Co Ltd 非晶質シリコン太陽電池
JPH0680837B2 (ja) * 1983-08-29 1994-10-12 通商産業省工業技術院長 光路を延長した光電変換素子
US4530739A (en) * 1984-03-09 1985-07-23 Energy Conversion Devices, Inc. Method of fabricating an electroplated substrate
US4675263A (en) * 1984-03-12 1987-06-23 Canon Kabushiki Kaisha Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate
US4720443A (en) * 1984-04-05 1988-01-19 Canon Kabushiki Kaisha Member having light receiving layer with nonparallel interfaces
DE3580939D1 (de) * 1984-06-05 1991-01-31 Canon Kk Lichtempfangselement.
US4678733A (en) * 1984-10-15 1987-07-07 Canon Kabushiki Kaisha Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces
JPS6236676A (ja) * 1985-08-10 1987-02-17 Canon Inc 光導電部材用の支持体及び該支持体を有する光導電部材
JPS6283641A (ja) * 1985-10-08 1987-04-17 Sharp Corp 電界効果型半導体センサ
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
JPS6289064A (ja) * 1985-10-16 1987-04-23 Canon Inc 光受容部材
JPS6290663A (ja) * 1985-10-17 1987-04-25 Canon Inc 光受容部材
JPS62106468A (ja) * 1985-11-01 1987-05-16 Canon Inc 光受容部材
JPS62106470A (ja) * 1985-11-02 1987-05-16 Canon Inc 光受容部材
GB2188924B (en) * 1986-04-08 1990-05-09 Glaverbel Matted glass, process of producing matted glass, photo-voltaic cell incorporating a glass sheet, and process of manufacturing such a cell
US5336558A (en) * 1991-06-24 1994-08-09 Minnesota Mining And Manufacturing Company Composite article comprising oriented microstructures
FR2694451B1 (fr) * 1992-07-29 1994-09-30 Asulab Sa Cellule photovoltaïque.
AUPN679295A0 (en) * 1995-11-23 1995-12-14 Unisearch Limited Conformal films for light-trapping in thin silicon solar cells
DE19713215A1 (de) * 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
KR101238285B1 (ko) * 2008-10-17 2013-02-28 가부시키가이샤 아루박 태양 전지의 제조 방법
CN112786730B (zh) * 2020-12-17 2022-11-08 隆基绿能科技股份有限公司 叠层光伏器件
CN113471323B (zh) * 2021-06-30 2023-07-25 电子科技大学 一种光电探测器、具有记忆功能的运算处理器及制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485658A (en) * 1965-07-22 1969-12-23 Du Pont Plural monolayer coated article and process of making
US3973994A (en) * 1974-03-11 1976-08-10 Rca Corporation Solar cell with grooved surface
US4328390A (en) * 1979-09-17 1982-05-04 The University Of Delaware Thin film photovoltaic cell
US4285762A (en) * 1979-12-31 1981-08-25 Exxon Research & Engineering Co. Plasma etching of amorphous silicon (SE-35)

Also Published As

Publication number Publication date
CA1209681A (en) 1986-08-12
AU1757283A (en) 1984-02-09
ES524740A0 (es) 1984-08-01
EP0102204A1 (en) 1984-03-07

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