BR9904782A - Método para fabricar dispositivo de célula solar - Google Patents

Método para fabricar dispositivo de célula solar

Info

Publication number
BR9904782A
BR9904782A BR9904782-9A BR9904782A BR9904782A BR 9904782 A BR9904782 A BR 9904782A BR 9904782 A BR9904782 A BR 9904782A BR 9904782 A BR9904782 A BR 9904782A
Authority
BR
Brazil
Prior art keywords
oxide electrode
insulating substrate
semiconductor layer
solar cell
transparent oxide
Prior art date
Application number
BR9904782-9A
Other languages
English (en)
Inventor
Shinzo Yanagimachi
Satoshi Nakayama
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Publication of BR9904782A publication Critical patent/BR9904782A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Método para produzir um dispositivo de célula solar, que compreende formar um eletrodo de óxido transparente (12) sobre a superfície de um substrato isolante (10), limpar a superfície do substrato isolante (10) e a superfície do eletrodo do óxido transparente (12) com um halogênio gasoso que tem uma pressão de vapor saturado maior que aquela do gás de gravação usado para formar o eletrodo de óxido transpartente (12), formar uma camada de tratamento de superfície (14), em película de nitreto de silício (16), uma camada (18) de semicondutor do tipo p, uma camada compensadora (20), uma camada de semicondutor intrínseco (22), uma camada (24) de semicondutor de tipo n, um eletrodo metálico (26), nessa ordem mencionada, formando assim uma estrutura de múltiplas camadas. Por causa da etapa de limpeza, as superfícies do substrato isolente (10) e do eletrodo de óxido transparente (12) são limpas a tal ponto que a transparência é alta e alcança-se uma transmitância de luz desejada.
BR9904782-9A 1998-01-28 1999-01-22 Método para fabricar dispositivo de célula solar BR9904782A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1548698 1998-01-28
PCT/JP1999/000257 WO1999039390A1 (fr) 1998-01-28 1999-01-22 Procede de fabrication d'un dispositif de pile solaire

Publications (1)

Publication Number Publication Date
BR9904782A true BR9904782A (pt) 2000-03-08

Family

ID=11890135

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9904782-9A BR9904782A (pt) 1998-01-28 1999-01-22 Método para fabricar dispositivo de célula solar

Country Status (10)

Country Link
US (1) US6207471B1 (pt)
EP (1) EP0978883B1 (pt)
JP (1) JP3290186B2 (pt)
KR (1) KR100333123B1 (pt)
CN (2) CN1145222C (pt)
AU (1) AU2074499A (pt)
BR (1) BR9904782A (pt)
DE (1) DE69924926D1 (pt)
HK (1) HK1038833A1 (pt)
WO (1) WO1999039390A1 (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999038216A1 (fr) * 1998-01-22 1999-07-29 Citizen Watch Co., Ltd. Dispositif de cellule solaire et son procede de production
JP2005109068A (ja) * 2003-09-30 2005-04-21 Sanyo Electric Co Ltd 半導体装置およびその製造方法
CN100448033C (zh) * 2006-07-07 2008-12-31 杨永清 太阳复合膜电池
JP2008112840A (ja) * 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
JP5470633B2 (ja) * 2008-12-11 2014-04-16 国立大学法人東北大学 光電変換素子及び太陽電池

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63215083A (ja) * 1987-03-04 1988-09-07 Mitsubishi Heavy Ind Ltd 太陽電池
JPH0263121A (ja) 1988-08-29 1990-03-02 Seiko Epson Corp 光電変換装置の製造方法
JPH0362968A (ja) * 1989-07-31 1991-03-19 Fujitsu Ltd 半導体装置の製造方法
JPH03125481A (ja) * 1989-10-09 1991-05-28 Sanyo Electric Co Ltd 光起電力装置
JP3044418B2 (ja) * 1991-10-30 2000-05-22 キヤノン株式会社 電極基板の製造方法
JPH05267701A (ja) 1992-03-18 1993-10-15 Taiyo Yuden Co Ltd 酸化錫透明導電膜のパターニング方法
JP2923193B2 (ja) 1993-12-30 1999-07-26 キヤノン株式会社 光電変換素子の製造方法
JPH07220232A (ja) * 1994-02-03 1995-08-18 Shimeo Seimitsu Kk 複合型磁気ヘッドの製造方法
TW269743B (pt) * 1994-04-26 1996-02-01 Toshiba Eng Co
US5668050A (en) * 1994-04-28 1997-09-16 Canon Kabushiki Kaisha Solar cell manufacturing method
US5510271A (en) * 1994-09-09 1996-04-23 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
JPH08122798A (ja) * 1994-10-19 1996-05-17 Toshiba Corp Ｉｔｏ被膜のエッチング方法

Also Published As

Publication number Publication date
JP3290186B2 (ja) 2002-06-10
WO1999039390A1 (fr) 1999-08-05
CN1312592A (zh) 2001-09-12
EP0978883A1 (en) 2000-02-09
AU2074499A (en) 1999-08-16
EP0978883A4 (en) 2002-01-30
KR100333123B1 (ko) 2002-04-18
US6207471B1 (en) 2001-03-27
EP0978883B1 (en) 2005-04-27
CN1145222C (zh) 2004-04-07
KR20010005586A (ko) 2001-01-15
DE69924926D1 (de) 2005-06-02
HK1038833A1 (zh) 2002-03-28
CN1256010A (zh) 2000-06-07

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Legal Events

Date Code Title Description
TE Change of address
B08F Application fees: application dismissed [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A,7A E 8A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 1921 DE 30/10/2007.