SE9403609D0 - Förfarande för framställning av tunnfilmssolceller - Google Patents

Förfarande för framställning av tunnfilmssolceller

Info

Publication number
SE9403609D0
SE9403609D0 SE9403609A SE9403609A SE9403609D0 SE 9403609 D0 SE9403609 D0 SE 9403609D0 SE 9403609 A SE9403609 A SE 9403609A SE 9403609 A SE9403609 A SE 9403609A SE 9403609 D0 SE9403609 D0 SE 9403609D0
Authority
SE
Sweden
Prior art keywords
layer
pct
solar cells
film solar
thin film
Prior art date
Application number
SE9403609A
Other languages
English (en)
Other versions
SE9403609L (sv
SE508676C2 (sv
Inventor
Marika Bodegaard
Jonas Hedstroem
Lars Stolt
Original Assignee
Nordic Solar Energy Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordic Solar Energy Ab filed Critical Nordic Solar Energy Ab
Priority to SE9403609A priority Critical patent/SE508676C2/sv
Publication of SE9403609D0 publication Critical patent/SE9403609D0/sv
Priority to AU38205/95A priority patent/AU3820595A/en
Priority to PCT/SE1995/001242 priority patent/WO1996013063A1/en
Priority to ES95936166T priority patent/ES2191716T3/es
Priority to JP51383596A priority patent/JP3690807B2/ja
Priority to EP95936166A priority patent/EP0787354B1/en
Priority to US08/817,693 priority patent/US5994163A/en
Priority to DE69529529T priority patent/DE69529529T2/de
Publication of SE9403609L publication Critical patent/SE9403609L/sv
Publication of SE508676C2 publication Critical patent/SE508676C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
SE9403609A 1994-10-21 1994-10-21 Förfarande för framställning av tunnfilmssolceller SE508676C2 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE9403609A SE508676C2 (sv) 1994-10-21 1994-10-21 Förfarande för framställning av tunnfilmssolceller
AU38205/95A AU3820595A (en) 1994-10-21 1995-10-20 A method of manufacturing thin-film solar cells
PCT/SE1995/001242 WO1996013063A1 (en) 1994-10-21 1995-10-20 A method of manufacturing thin-film solar cells
ES95936166T ES2191716T3 (es) 1994-10-21 1995-10-20 Un procedimiento de fabricacion de celulas solares de capa delgada.
JP51383596A JP3690807B2 (ja) 1994-10-21 1995-10-20 薄膜太陽電池の製法
EP95936166A EP0787354B1 (en) 1994-10-21 1995-10-20 A method of manufacturing thin-film solar cells
US08/817,693 US5994163A (en) 1994-10-21 1995-10-20 Method of manufacturing thin-film solar cells
DE69529529T DE69529529T2 (de) 1994-10-21 1995-10-20 Herstellungsverfahren von dünnschicht-solarzellen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9403609A SE508676C2 (sv) 1994-10-21 1994-10-21 Förfarande för framställning av tunnfilmssolceller

Publications (3)

Publication Number Publication Date
SE9403609D0 true SE9403609D0 (sv) 1994-10-21
SE9403609L SE9403609L (sv) 1996-04-22
SE508676C2 SE508676C2 (sv) 1998-10-26

Family

ID=20395698

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9403609A SE508676C2 (sv) 1994-10-21 1994-10-21 Förfarande för framställning av tunnfilmssolceller

Country Status (8)

Country Link
US (1) US5994163A (sv)
EP (1) EP0787354B1 (sv)
JP (1) JP3690807B2 (sv)
AU (1) AU3820595A (sv)
DE (1) DE69529529T2 (sv)
ES (1) ES2191716T3 (sv)
SE (1) SE508676C2 (sv)
WO (1) WO1996013063A1 (sv)

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DE4447866B4 (de) * 1994-11-16 2005-05-25 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschichtsolarzelle
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US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
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US20060057766A1 (en) * 2003-07-08 2006-03-16 Quanxi Jia Method for preparation of semiconductive films
SE525704C2 (sv) * 2003-08-12 2005-04-05 Sandvik Ab Belagd stålprodukt av metallbandsmaterial innefattande ett elektriskt isolerande skikt dopat med en eller flera alkalimetaller
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US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
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US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US8541048B1 (en) 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
US20090032108A1 (en) * 2007-03-30 2009-02-05 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
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HUE053775T2 (hu) 2016-02-11 2021-07-28 Flisom Ag Önszervezõdõ mintázódás vékonyréteg eszközök gyártására
HUE053005T2 (hu) 2016-02-11 2021-06-28 Flisom Ag Vékonyréteg optoelektronikai eszközök gyártása hozzáadott rubídiummal és/vagy céziummal
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Also Published As

Publication number Publication date
WO1996013063A1 (en) 1996-05-02
DE69529529D1 (de) 2003-03-06
SE9403609L (sv) 1996-04-22
JP3690807B2 (ja) 2005-08-31
ES2191716T3 (es) 2003-09-16
JPH10512096A (ja) 1998-11-17
EP0787354A1 (en) 1997-08-06
AU3820595A (en) 1996-05-15
EP0787354B1 (en) 2003-01-29
DE69529529T2 (de) 2003-12-11
US5994163A (en) 1999-11-30
SE508676C2 (sv) 1998-10-26

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