ATE72909T1 - Durchsichtige leitende schicht und verfahren zu deren herstellung. - Google Patents
Durchsichtige leitende schicht und verfahren zu deren herstellung.Info
- Publication number
- ATE72909T1 ATE72909T1 AT86113673T AT86113673T ATE72909T1 AT E72909 T1 ATE72909 T1 AT E72909T1 AT 86113673 T AT86113673 T AT 86113673T AT 86113673 T AT86113673 T AT 86113673T AT E72909 T1 ATE72909 T1 AT E72909T1
- Authority
- AT
- Austria
- Prior art keywords
- production
- conductive coating
- clear conductive
- conductive film
- transparent conductive
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Electric Cables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60221665A JPS6281057A (ja) | 1985-10-04 | 1985-10-04 | 透明導電膜 |
EP86113673A EP0217405B1 (de) | 1985-10-04 | 1986-10-03 | Durchsichtige leitende Schicht und Verfahren zu deren Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE72909T1 true ATE72909T1 (de) | 1992-03-15 |
Family
ID=16770341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT86113673T ATE72909T1 (de) | 1985-10-04 | 1986-10-03 | Durchsichtige leitende schicht und verfahren zu deren herstellung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4733284A (de) |
EP (1) | EP0217405B1 (de) |
JP (1) | JPS6281057A (de) |
KR (1) | KR900007756B1 (de) |
AT (1) | ATE72909T1 (de) |
DE (1) | DE3683979D1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3685623T2 (de) * | 1985-10-04 | 1992-12-24 | Hosiden Corp | Duennfilmtransistor und verfahren zu seiner herstellung. |
US4994401A (en) * | 1987-01-16 | 1991-02-19 | Hosiden Electronics Co., Ltd. | Method of making a thin film transistor |
US5173443A (en) * | 1987-02-13 | 1992-12-22 | Northrop Corporation | Method of manufacture of optically transparent electrically conductive semiconductor windows |
GB2214710A (en) * | 1988-01-29 | 1989-09-06 | Univ Open | Solar collectors |
KR910007142A (ko) * | 1988-09-30 | 1991-04-30 | 미다 가쓰시게 | 박막 광트랜지스터와 그것을 사용한 광센서어레이 |
FR2640809B1 (fr) * | 1988-12-19 | 1993-10-22 | Chouan Yannick | Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor |
JPH0391932A (ja) * | 1989-09-04 | 1991-04-17 | Canon Inc | 半導体装置の製造方法 |
KR930001901B1 (ko) * | 1990-07-27 | 1993-03-19 | 삼성전자 주식회사 | 박막 트랜지스터의 제조방법 |
JP2912506B2 (ja) * | 1992-10-21 | 1999-06-28 | シャープ株式会社 | 透明導電膜の形成方法 |
EP0660381A1 (de) * | 1993-12-21 | 1995-06-28 | Koninklijke Philips Electronics N.V. | Herstellungsverfahren für ein lichtdurchlässiges Leitermuster und eine Flüssigkristall-Anzeigevorrichtung |
JP3272532B2 (ja) * | 1993-12-27 | 2002-04-08 | 富士通株式会社 | 半導体装置の製造方法 |
KR100394896B1 (ko) * | 1995-08-03 | 2003-11-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 투명스위칭소자를포함하는반도체장치 |
US5824418A (en) * | 1995-09-05 | 1998-10-20 | Northrop Grumman Corporation | Optically transparent, electrically conductive semiconductor windows |
JP2757850B2 (ja) * | 1996-04-18 | 1998-05-25 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
KR100377376B1 (ko) * | 2000-03-10 | 2003-03-26 | 우형철 | 이온빔 증착에 의한 ito박막 증착방법 및 증착장치 |
US20070193624A1 (en) * | 2006-02-23 | 2007-08-23 | Guardian Industries Corp. | Indium zinc oxide based front contact for photovoltaic device and method of making same |
JP4752712B2 (ja) * | 2006-10-10 | 2011-08-17 | 株式会社島津製作所 | 自動分析装置 |
US8179587B2 (en) * | 2008-01-04 | 2012-05-15 | 3M Innovative Properties Company | Electrochromic device |
US8896065B2 (en) * | 2008-04-14 | 2014-11-25 | Sharp Laboratories Of America, Inc. | Top gate thin film transistor with independent field control for off-current suppression |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1409894A (fr) * | 1964-07-23 | 1965-09-03 | Electronique & Automatisme Sa | Dispositif opto-électronique perfectionné |
US4040073A (en) * | 1975-08-29 | 1977-08-02 | Westinghouse Electric Corporation | Thin film transistor and display panel using the transistor |
US4278831A (en) * | 1979-04-27 | 1981-07-14 | The Boeing Company | Process for fabricating solar cells and the product produced thereby |
JPS5951757B2 (ja) * | 1979-12-27 | 1984-12-15 | 富士電機株式会社 | 非晶質半導体装置の製造方法 |
JPS5778135A (en) * | 1980-11-01 | 1982-05-15 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
JPS59181064A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 半導体装置 |
-
1985
- 1985-10-04 JP JP60221665A patent/JPS6281057A/ja active Pending
-
1986
- 1986-09-26 US US06/911,695 patent/US4733284A/en not_active Expired - Lifetime
- 1986-09-30 KR KR1019860008178A patent/KR900007756B1/ko not_active IP Right Cessation
- 1986-10-03 EP EP86113673A patent/EP0217405B1/de not_active Expired - Lifetime
- 1986-10-03 AT AT86113673T patent/ATE72909T1/de not_active IP Right Cessation
- 1986-10-03 DE DE8686113673T patent/DE3683979D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4733284A (en) | 1988-03-22 |
EP0217405A1 (de) | 1987-04-08 |
KR870004533A (ko) | 1987-05-11 |
KR900007756B1 (ko) | 1990-10-19 |
JPS6281057A (ja) | 1987-04-14 |
DE3683979D1 (de) | 1992-04-02 |
EP0217405B1 (de) | 1992-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEFA | Change of the company name | ||
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |