DE3887689D1 - Substrat für solarzelle und herstellungsverfahren. - Google Patents

Substrat für solarzelle und herstellungsverfahren.

Info

Publication number
DE3887689D1
DE3887689D1 DE88906754T DE3887689T DE3887689D1 DE 3887689 D1 DE3887689 D1 DE 3887689D1 DE 88906754 T DE88906754 T DE 88906754T DE 3887689 T DE3887689 T DE 3887689T DE 3887689 D1 DE3887689 D1 DE 3887689D1
Authority
DE
Germany
Prior art keywords
substrate
manufacturing
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88906754T
Other languages
English (en)
Other versions
DE3887689T2 (de
Inventor
Shigeyoshi - Kobayashi
Susumu Yaba
Shinya - Kikugawa
Stephen Muhl
Arun Madan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
AMORPHOUS SILICON Inc
Original Assignee
Asahi Glass Co Ltd
AMORPHOUS SILICON Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, AMORPHOUS SILICON Inc filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE3887689D1 publication Critical patent/DE3887689D1/de
Publication of DE3887689T2 publication Critical patent/DE3887689T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
DE3887689T 1987-07-24 1988-07-22 Substrat für solarzelle und herstellungsverfahren. Expired - Fee Related DE3887689T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7742287A 1987-07-24 1987-07-24
PCT/US1988/002493 WO1989001238A1 (en) 1987-07-24 1988-07-22 Solar cell substrate and process for its production

Publications (2)

Publication Number Publication Date
DE3887689D1 true DE3887689D1 (de) 1994-03-17
DE3887689T2 DE3887689T2 (de) 1994-09-08

Family

ID=22137951

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3887689T Expired - Fee Related DE3887689T2 (de) 1987-07-24 1988-07-22 Substrat für solarzelle und herstellungsverfahren.

Country Status (4)

Country Link
EP (1) EP0393034B1 (de)
JP (1) JP2615147B2 (de)
DE (1) DE3887689T2 (de)
WO (1) WO1989001238A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149351A (en) * 1988-05-24 1992-09-22 Asahi Glass Company Ltd. Method for making a curved solar panel for an automobile
SE468372B (sv) * 1991-04-24 1992-12-21 Stiftelsen Im Inst Foer Mikroe Foerfarande foer tillverkning av tunnfilmssolceller varvid deponering av skikt paa substrat sker i roterbar (cylindrisk) baeranordning
JP4999294B2 (ja) * 2005-07-29 2012-08-15 シャープ株式会社 色素増感太陽電池および色素増感太陽電池用多孔質半導体層の製造方法
JP2008102092A (ja) * 2006-10-20 2008-05-01 Denso Corp 計器
FR2922046B1 (fr) * 2007-10-05 2011-06-24 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere
DE102008005283B4 (de) * 2008-01-19 2009-10-29 Schott Solar Gmbh Verfahren zur Herstellung einer mit einem transparenten, Metalloxid beschichtetn Glasscheibe für ein photovoltaisches Modul und eine solche beschichtete Glasscheibe
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
JP2010080090A (ja) * 2008-09-24 2010-04-08 Toyo Seikan Kaisha Ltd 色素増感太陽電池に使用される負極基板
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3671311A (en) * 1969-07-01 1972-06-20 Ppg Industries Inc Applying electroconductive heating circuits to glass
GB2047955B (en) * 1976-07-06 1983-11-02 Boeing Co Continous process for fabricating solar cells
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
FR2553934B1 (fr) * 1983-10-19 1986-09-05 Labo Electronique Physique Structure semi-conducteur-support vitreux et dispositifs realises avec une telle structure
US4510344A (en) * 1983-12-19 1985-04-09 Atlantic Richfield Company Thin film solar cell substrate
JPS6149481A (ja) * 1984-08-17 1986-03-11 Sanyo Electric Co Ltd 光起電力装置の製造方法

Also Published As

Publication number Publication date
EP0393034A1 (de) 1990-10-24
JPH01103882A (ja) 1989-04-20
DE3887689T2 (de) 1994-09-08
EP0393034B1 (de) 1994-02-02
JP2615147B2 (ja) 1997-05-28
WO1989001238A1 (en) 1989-02-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee