DE3851402D1 - Integrierte sonnenzelle und herstellungsverfahren. - Google Patents

Integrierte sonnenzelle und herstellungsverfahren.

Info

Publication number
DE3851402D1
DE3851402D1 DE3851402T DE3851402T DE3851402D1 DE 3851402 D1 DE3851402 D1 DE 3851402D1 DE 3851402 T DE3851402 T DE 3851402T DE 3851402 T DE3851402 T DE 3851402T DE 3851402 D1 DE3851402 D1 DE 3851402D1
Authority
DE
Germany
Prior art keywords
manufacturing
integrated sun
sun cell
cell
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3851402T
Other languages
English (en)
Other versions
DE3851402T2 (de
Inventor
Kazunori Tsuge
Toshihito Endo
Kenji Kobayashi
Yoshihisa Tawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Application granted granted Critical
Publication of DE3851402D1 publication Critical patent/DE3851402D1/de
Publication of DE3851402T2 publication Critical patent/DE3851402T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
DE3851402T 1987-03-31 1988-03-30 Integrierte sonnenzelle und herstellungsverfahren. Expired - Lifetime DE3851402T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62080363A JPS63245964A (ja) 1987-03-31 1987-03-31 集積型太陽電池
PCT/JP1988/000319 WO1988007768A1 (en) 1987-03-31 1988-03-30 Integrated solar battery and method of producing the same

Publications (2)

Publication Number Publication Date
DE3851402D1 true DE3851402D1 (de) 1994-10-13
DE3851402T2 DE3851402T2 (de) 1995-01-19

Family

ID=13716175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851402T Expired - Lifetime DE3851402T2 (de) 1987-03-31 1988-03-30 Integrierte sonnenzelle und herstellungsverfahren.

Country Status (5)

Country Link
US (1) US4956023A (de)
EP (1) EP0311690B1 (de)
JP (1) JPS63245964A (de)
DE (1) DE3851402T2 (de)
WO (1) WO1988007768A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3117446B2 (ja) * 1989-06-15 2000-12-11 株式会社半導体エネルギー研究所 酸化物導電膜の成膜加工方法
US5264077A (en) * 1989-06-15 1993-11-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing a conductive oxide pattern
WO1992007386A1 (en) * 1990-10-15 1992-04-30 United Solar Systems Corporation Monolithic solar cell array and method for its manufacture
GB2260220B (en) * 1991-09-10 1996-01-03 Sanyo Electric Co An amorphous silicon solar cell and method of the solar cell manufacture
US5268037A (en) * 1992-05-21 1993-12-07 United Solar Systems Corporation Monolithic, parallel connected photovoltaic array and method for its manufacture
JPH11103079A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
US6011215A (en) * 1997-12-18 2000-01-04 United Solar Systems Corporation Point contact photovoltaic module and method for its manufacture
JP3820975B2 (ja) * 2001-12-12 2006-09-13 ソニー株式会社 半導体装置及びその製造方法
JP4194468B2 (ja) * 2003-10-10 2008-12-10 シャープ株式会社 太陽電池およびその製造方法
GB2416621A (en) * 2004-07-27 2006-02-01 Cambridge Display Tech Ltd Laminated interconnects for opto-electronic device modules
KR101476120B1 (ko) * 2008-06-12 2014-12-26 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
JP5485060B2 (ja) * 2010-07-28 2014-05-07 三洋電機株式会社 太陽電池の製造方法
JP2016092278A (ja) * 2014-11-07 2016-05-23 住友化学株式会社 有機光電変換素子
US11329177B2 (en) 2018-11-08 2022-05-10 Swift Solar Inc Stable perovskite module interconnects
US11631777B2 (en) * 2019-03-11 2023-04-18 Swift Solar Inc. Integration of bypass diodes within thin film photovoltaic module interconnects
US12094663B2 (en) 2021-09-30 2024-09-17 Swift Solar Inc. Bypass diode interconnect for thin film solar modules

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134989A (en) * 1979-04-09 1980-10-21 Fujitsu Ltd Temperature-sensitive element material and manufacturing thereof
US4336295A (en) * 1980-12-22 1982-06-22 Eastman Kodak Company Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device
JPS5878473A (ja) * 1981-11-05 1983-05-12 Seiko Epson Corp 薄膜太陽電池
JPS58101468A (ja) * 1981-12-11 1983-06-16 Toshiba Corp 太陽電池
JPS5929475A (ja) * 1982-08-12 1984-02-16 Nippon Denso Co Ltd 非晶質太陽電池
DE3382695T2 (de) * 1982-11-24 1993-09-23 Semiconductor Energy Lab Fotovoltaischer wandler.
JPS59103383A (ja) * 1982-12-03 1984-06-14 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS59220978A (ja) * 1983-05-31 1984-12-12 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS6031258A (ja) * 1983-07-29 1985-02-18 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS6043869A (ja) * 1983-08-19 1985-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
GB8330578D0 (en) * 1983-11-16 1983-12-21 Rca Corp Inter-connected photovoltaic devices
JPS61164274A (ja) * 1985-01-17 1986-07-24 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPS6261376A (ja) * 1985-09-11 1987-03-18 Fuji Electric Corp Res & Dev Ltd 太陽電池装置
US4755475A (en) * 1986-02-18 1988-07-05 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
US4675466A (en) * 1986-04-05 1987-06-23 Chronar Corp. Stabilization of intraconnections and interfaces
JPH0631258A (ja) * 1992-07-14 1994-02-08 Ebara Corp 密閉式廃棄物処分場における埋立てシステム
JPH0786754B2 (ja) * 1993-03-16 1995-09-20 ヤマハ株式会社 電子鍵盤楽器

Also Published As

Publication number Publication date
JPS63245964A (ja) 1988-10-13
EP0311690B1 (de) 1994-09-07
EP0311690A1 (de) 1989-04-19
US4956023A (en) 1990-09-11
EP0311690A4 (de) 1990-06-26
DE3851402T2 (de) 1995-01-19
WO1988007768A1 (en) 1988-10-06

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Legal Events

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