DE69215176D1 - Solarzelle und deren Herstellungsmethode - Google Patents

Solarzelle und deren Herstellungsmethode

Info

Publication number
DE69215176D1
DE69215176D1 DE69215176T DE69215176T DE69215176D1 DE 69215176 D1 DE69215176 D1 DE 69215176D1 DE 69215176 T DE69215176 T DE 69215176T DE 69215176 T DE69215176 T DE 69215176T DE 69215176 D1 DE69215176 D1 DE 69215176D1
Authority
DE
Germany
Prior art keywords
manufacturing
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69215176T
Other languages
English (en)
Other versions
DE69215176T2 (de
Inventor
Tsutomu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3244939A external-priority patent/JPH0563219A/ja
Priority claimed from JP3244938A external-priority patent/JPH0563218A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69215176D1 publication Critical patent/DE69215176D1/de
Publication of DE69215176T2 publication Critical patent/DE69215176T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE69215176T 1991-08-30 1992-08-28 Solarzelle und deren Herstellungsmethode Expired - Fee Related DE69215176T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3244939A JPH0563219A (ja) 1991-08-30 1991-08-30 太陽電池及びその製造方法
JP3244938A JPH0563218A (ja) 1991-08-30 1991-08-30 太陽電池及びその製造方法

Publications (2)

Publication Number Publication Date
DE69215176D1 true DE69215176D1 (de) 1996-12-19
DE69215176T2 DE69215176T2 (de) 1997-03-27

Family

ID=26536970

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215176T Expired - Fee Related DE69215176T2 (de) 1991-08-30 1992-08-28 Solarzelle und deren Herstellungsmethode

Country Status (4)

Country Link
US (1) US5380371A (de)
EP (1) EP0531827B1 (de)
AU (1) AU651486B2 (de)
DE (1) DE69215176T2 (de)

Families Citing this family (90)

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US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
US5660645A (en) * 1994-04-28 1997-08-26 Canon Kabushiki Kaisha Solar cell module
US7732243B2 (en) * 1995-05-15 2010-06-08 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US6459032B1 (en) 1995-05-15 2002-10-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US20080314433A1 (en) * 1995-05-15 2008-12-25 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
KR0172000B1 (ko) * 1995-08-11 1999-05-01 이대원 전도성 잉크를 이용한 반도체 패키지용 기판의 제조방법
US6121542A (en) * 1996-05-17 2000-09-19 Canon Kabushiki Kaisha Photovoltaic device
JPH1056190A (ja) * 1996-08-08 1998-02-24 Canon Inc 光起電力素子及びその製造方法
US20080011350A1 (en) * 1999-03-30 2008-01-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and other optoelectric devices
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US8076568B2 (en) 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20090107538A1 (en) * 2007-10-29 2009-04-30 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US7507903B2 (en) * 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8138413B2 (en) * 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US6239352B1 (en) * 1999-03-30 2001-05-29 Daniel Luch Substrate and collector grid structures for electrically interconnecting photovoltaic arrays and process of manufacture of such arrays
US7635810B2 (en) * 1999-03-30 2009-12-22 Daniel Luch Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays
US7898053B2 (en) * 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898054B2 (en) 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US20110067754A1 (en) * 2000-02-04 2011-03-24 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
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JPWO2003009394A1 (ja) * 2001-07-18 2004-11-11 本田技研工業株式会社 透明電極層の成膜方法および装置
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US7282106B2 (en) * 2003-05-02 2007-10-16 E. I. Du Pont De Nemours And Company Fibers and ribbons for use in the manufacture of solar cells
JP4565650B2 (ja) * 2003-05-22 2010-10-20 株式会社Ｎｅｏｍａｘマテリアル 電極線材およびその製造方法並びに前記電極線材によって形成された接続用リード線を備えた太陽電池
US20070224464A1 (en) * 2005-03-21 2007-09-27 Srini Balasubramanian Dye-sensitized photovoltaic cells
JP2009505426A (ja) * 2005-08-15 2009-02-05 コナルカ テクノロジーズ インコーポレイテッド 外部回路への相互接続を有する光起電力電池
US20070221268A1 (en) * 2006-03-21 2007-09-27 Hasch Bruce M Encapsulants for electronic components
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
CN100576578C (zh) * 2006-04-20 2009-12-30 无锡尚德太阳能电力有限公司 制备太阳电池电极的方法及其电化学沉积装置
JP2008085227A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 太陽電池モジュール
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WO2008122027A2 (en) * 2007-04-02 2008-10-09 Konarka Technologies, Inc. Novel electrode
KR20090007063A (ko) * 2007-07-13 2009-01-16 삼성에스디아이 주식회사 태양전지 및 이의 제조방법
WO2009067475A1 (en) * 2007-11-19 2009-05-28 Applied Materials, Inc. Crystalline solar cell metallization methods
DE102008030880A1 (de) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür
US20100000602A1 (en) * 2007-12-11 2010-01-07 Evergreen Solar, Inc. Photovoltaic Cell with Efficient Finger and Tab Layout
US20090159114A1 (en) * 2007-12-11 2009-06-25 Evergreen Solar, Inc. Photovoltaic Panel and Cell with Fine Fingers and Method of Manufacture of the Same
US20090301560A1 (en) * 2008-06-05 2009-12-10 Sanyo Electric Co., Ltd. Photovoltaic element, photovoltaic module and method of manufacturing photovoltaic element
KR100993511B1 (ko) 2008-11-19 2010-11-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
KR20100066817A (ko) * 2008-12-10 2010-06-18 에스에스씨피 주식회사 태양 전지용 전극의 제조방법, 이를 이용하여 제조된 태양 전지용 기판 및 태양 전지
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US20160380127A1 (en) 2015-06-26 2016-12-29 Richard Hamilton SEWELL Leave-In Etch Mask for Foil-Based Metallization of Solar Cells
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US11424373B2 (en) 2016-04-01 2022-08-23 Sunpower Corporation Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells
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Also Published As

Publication number Publication date
US5380371A (en) 1995-01-10
EP0531827A1 (de) 1993-03-17
AU651486B2 (en) 1994-07-21
EP0531827B1 (de) 1996-11-13
AU2138092A (en) 1993-03-04
DE69215176T2 (de) 1997-03-27

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