DE69216042D1 - Solarzelle - Google Patents
SolarzelleInfo
- Publication number
- DE69216042D1 DE69216042D1 DE69216042T DE69216042T DE69216042D1 DE 69216042 D1 DE69216042 D1 DE 69216042D1 DE 69216042 T DE69216042 T DE 69216042T DE 69216042 T DE69216042 T DE 69216042T DE 69216042 D1 DE69216042 D1 DE 69216042D1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- solar
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3269568A JP2837296B2 (ja) | 1991-10-17 | 1991-10-17 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69216042D1 true DE69216042D1 (de) | 1997-01-30 |
DE69216042T2 DE69216042T2 (de) | 1997-06-19 |
Family
ID=17474177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69216042T Expired - Lifetime DE69216042T2 (de) | 1991-10-17 | 1992-10-16 | Solarzelle |
Country Status (4)
Country | Link |
---|---|
US (1) | US5330584A (de) |
EP (1) | EP0537781B1 (de) |
JP (1) | JP2837296B2 (de) |
DE (1) | DE69216042T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3032422B2 (ja) * | 1994-04-28 | 2000-04-17 | シャープ株式会社 | 太陽電池セルとその製造方法 |
JP3202536B2 (ja) * | 1994-07-19 | 2001-08-27 | シャープ株式会社 | バイパス機能付太陽電池セル |
AUPM996094A0 (en) * | 1994-12-08 | 1995-01-05 | Pacific Solar Pty Limited | Multilayer solar cells with bypass diode protection |
US5882961A (en) * | 1995-09-11 | 1999-03-16 | Motorola, Inc. | Method of manufacturing semiconductor device with reduced charge trapping |
US6156967A (en) | 1998-06-04 | 2000-12-05 | Tecstar Power Systems, Inc. | Modular glass covered solar cell array |
US6278054B1 (en) | 1998-05-28 | 2001-08-21 | Tecstar Power Systems, Inc. | Solar cell having an integral monolithically grown bypass diode |
JP3754841B2 (ja) * | 1998-06-11 | 2006-03-15 | キヤノン株式会社 | 光起電力素子およびその製造方法 |
US6103970A (en) | 1998-08-20 | 2000-08-15 | Tecstar Power Systems, Inc. | Solar cell having a front-mounted bypass diode |
AU767581B2 (en) | 1999-08-25 | 2003-11-20 | Kaneka Corporation | Thin film photoelectric conversion module and method of manufacturing the same |
JP2001189483A (ja) | 1999-10-18 | 2001-07-10 | Sharp Corp | バイパス機能付太陽電池セルおよびバイパス機能付き多接合積層型太陽電池セルおよびそれらの製造方法 |
JP3732993B2 (ja) | 2000-02-09 | 2006-01-11 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
JP3888860B2 (ja) * | 2000-05-24 | 2007-03-07 | シャープ株式会社 | 太陽電池セルの保護方法 |
AUPR174800A0 (en) | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
EP1461834A4 (de) * | 2001-11-29 | 2010-06-09 | Origin Energy Solar Pty Ltd | Halbleiter-texturierungsprozess |
US7082019B2 (en) * | 2002-11-04 | 2006-07-25 | The Boeing Company | Method and apparatus to protect solar cells from electrostatic discharge damage |
US7402448B2 (en) | 2003-01-31 | 2008-07-22 | Bp Corporation North America Inc. | Photovoltaic cell and production thereof |
JP4849786B2 (ja) * | 2004-08-30 | 2012-01-11 | シャープ株式会社 | 多接合型化合物太陽電池およびその製造方法 |
CN101675531B (zh) | 2007-02-16 | 2013-03-06 | 纳克公司 | 太阳能电池结构、光生伏打模块及对应的工艺 |
WO2008137966A2 (en) * | 2007-05-07 | 2008-11-13 | Robert Stancel | Structures for low cost, reliable solar roofing |
US8513514B2 (en) | 2008-10-24 | 2013-08-20 | Suncore Photovoltaics, Inc. | Solar tracking for terrestrial solar arrays with variable start and stop positions |
CN101527327B (zh) * | 2008-03-07 | 2012-09-19 | 清华大学 | 太阳能电池 |
JP5496473B2 (ja) * | 2008-06-05 | 2014-05-21 | シャープ株式会社 | 裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール |
WO2009152365A1 (en) | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Solar cell fabrication with faceting and ion implantation |
US8507837B2 (en) | 2008-10-24 | 2013-08-13 | Suncore Photovoltaics, Inc. | Techniques for monitoring solar array performance and applications thereof |
DE102008043206A1 (de) | 2008-10-27 | 2010-03-04 | Q-Cells Se | Solarzelle |
US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
US20100294352A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Metal patterning for electrically conductive structures based on alloy formation |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US20120234388A1 (en) * | 2009-08-26 | 2012-09-20 | Robert Stancel | Assembly for electrical breakdown protection for high current, non-elongate solar cells with electrically conductive substrates |
DE102009042106B3 (de) * | 2009-09-13 | 2011-02-10 | Philipp-Marcel Strobl | Solarmodulanlage |
US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
US9716196B2 (en) | 2011-02-09 | 2017-07-25 | Alta Devices, Inc. | Self-bypass diode function for gallium arsenide photovoltaic devices |
US11121272B2 (en) | 2011-02-09 | 2021-09-14 | Utica Leaseco, Llc | Self-bypass diode function for gallium arsenide photovoltaic devices |
CN106847736B (zh) | 2011-11-08 | 2020-08-11 | 因特瓦克公司 | 基板处理系统和方法 |
WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
JP5722413B2 (ja) * | 2013-11-19 | 2015-05-20 | シャープ株式会社 | 裏面電極型太陽電池、太陽電池ストリングおよび太陽電池モジュール |
TWI517430B (zh) * | 2013-12-31 | 2016-01-11 | 東旭能興業有限公司 | 太陽能電池單元及其製造方法 |
DE102014105990A1 (de) | 2014-04-29 | 2015-10-29 | Franz Baumgartner | Solarmodulanlage, bestehend aus einer Vielzahl von Solarzellenmodulen mit Trenner für insbesondere teilbeschattete Solarzellenstränge |
US10784396B2 (en) | 2015-09-30 | 2020-09-22 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell, solar cell module, and production method for solar cell |
JP6706779B2 (ja) * | 2015-09-30 | 2020-06-10 | パナソニックIpマネジメント株式会社 | 太陽電池および太陽電池モジュール |
US10923610B2 (en) | 2015-09-30 | 2021-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell and solar cell module |
CN108886068B (zh) * | 2016-03-23 | 2022-02-01 | 松下知识产权经营株式会社 | 太阳能电池、太阳能电池组件和太阳能电池的制造方法 |
JP6628163B2 (ja) * | 2016-03-29 | 2020-01-08 | パナソニックIpマネジメント株式会社 | 太陽電池 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4004949A (en) * | 1975-01-06 | 1977-01-25 | Motorola, Inc. | Method of making silicon solar cells |
JPS52124888A (en) * | 1976-04-13 | 1977-10-20 | Sony Corp | Production of solar battery |
US4112457A (en) * | 1976-11-01 | 1978-09-05 | Rca Corporation | Photovoltaic device having an extended PN junction |
US4116717A (en) * | 1976-12-08 | 1978-09-26 | The United States Of America As Represented By The Secretary Of The Air Force | Ion implanted eutectic gallium arsenide solar cell |
JPS5459092A (en) * | 1977-10-20 | 1979-05-12 | Seiko Epson Corp | Solar battery |
JPS58101471A (ja) * | 1981-12-14 | 1983-06-16 | Nippon Telegr & Teleph Corp <Ntt> | 光電池 |
JP2808004B2 (ja) * | 1989-01-30 | 1998-10-08 | 京セラ株式会社 | 太陽電池 |
JPH0324768A (ja) * | 1989-06-22 | 1991-02-01 | Sharp Corp | バイパスダイオード付太陽電池 |
JPH07105519B2 (ja) * | 1989-10-03 | 1995-11-13 | シャープ株式会社 | 太陽電池セル |
-
1991
- 1991-10-17 JP JP3269568A patent/JP2837296B2/ja not_active Expired - Lifetime
-
1992
- 1992-10-13 US US07/959,908 patent/US5330584A/en not_active Expired - Lifetime
- 1992-10-16 EP EP92117751A patent/EP0537781B1/de not_active Expired - Lifetime
- 1992-10-16 DE DE69216042T patent/DE69216042T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH05110121A (ja) | 1993-04-30 |
US5330584A (en) | 1994-07-19 |
EP0537781B1 (de) | 1996-12-18 |
JP2837296B2 (ja) | 1998-12-14 |
EP0537781A1 (de) | 1993-04-21 |
DE69216042T2 (de) | 1997-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
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