CN106847736B - 基板处理系统和方法 - Google Patents
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Abstract
本发明涉及一种基板处理系统和方法。具体地,一种用于处理基板的系统具有真空外壳和定位成处理在真空外壳内部的处理区中的晶片的处理室。提供两个轨道组件,一个轨道组件在处理区的每侧上。两个卡盘阵列每个在轨道组件之一骑行上,使得每个卡盘阵列在一个轨道组件上悬臂式伸展并支撑多个卡盘。轨道组件耦合到升高机构,其将轨道放置在用于处理的较高的位置上以及放置在用于返回卡盘组件的较低的位置处用于装载新晶片。拾取头组件将晶片从输送机装载到卡盘组件上。拾取头具有从晶片的正侧拾取晶片的多个静电卡盘。在处理卡盘中的冷却通道用于产生气垫以在由拾取头输送时帮助使晶片对齐。
Description
本申请为分案申请,其原申请是于2014年6月11日(国际申请日为2012年11月8日)向中国专利局提交的专利申请,申请号为201280061122.0,发明名称为“基板处理系统和方法”。
相关案子
本申请要求2011年11月8日提交的美国临时申请序列号61/557363的优先权利益,该临时申请的公开文本通过引用被全部并入本文。
技术领域
本申请涉及用于基板处理,例如硅基板处理以形成半导体电路、太阳能电池、平板显示器等的系统和方法。
背景技术
基板处理系统在本领域中是公知的。基板处理系统的例子包括溅射和离子注入系统。虽然在很多这样的系统中基板在处理期间是静止的,这样的静止系统在满足对高吞吐量处理的最近要求方面有困难。高吞吐量处理对处理基板(例如太阳能电池)特别严格。因此,需要新的系统架构来满足这个要求。
发明内容
包括本发明的下列概述,以便提供对本发明的一些方面和特征的基本理解。该概述不是本发明的广泛概述,且因此它并不打算特别标识本发明的关键或重要元件或描绘本发明的范围。它的唯一目的是以简化的形式介绍本发明的一些概念作为下面介绍的更详细的描述的序言。
在本文公开的是实现基板的高吞吐量处理的处理系统和方法。一个实施例提供一种系统,其中基板在处理系统(例如溅射目标或离子注入束)的前面连续移动。在处理系统的前面行进期间,基板以一个速度移动,而在来/往装载和卸载位置行进期间,基板以比第一速度高得多的第二速度移动。这实现系统的总高吞吐量。
各种所公开的实施例提供用于使用两个卡盘(chuck)阵列来处理基板(例如离子注入)的真空处理系统。在所述实施例中,每个卡盘阵列具有位于每个阵列上的静电卡盘上的两行晶片,但其它实施例可使用一行或多行。将阵列安装在室的相对侧上,使得它们可每个都具有晶片/气体连接和电连接,而不干扰另一阵列的操作。在每个阵列上使用至少两行实现连续的处理,即,处理室的连续利用而没有闲置时间。例如,通过使用两行用于离子注入,离子束可总是被保持在一个卡盘阵列上,同时另一阵列被卸载/装载并在经处理的阵列离开束之前返回到处理位置。
在所公开的实施例中,同时装载在卡盘阵列上的所有晶片。晶片成排地来自装载锁,几个晶片并列,例如三个晶片并列。当两行存在于进入的输送机上时,晶片被升高到拾取和放置机构。在一个实施例中,拾取和放置机构使用静电卡盘来保持晶片,但也可使用其它机构(例如真空装置)。系统可以可选地包括用于使用正确的对齐将晶片定位在卡盘上的动态晶片定位机构以确保处理与晶片对齐。例如,当执行离子注入时,对齐确保注入特征垂直于或平行于晶片边缘。
在一个实施例中,卡盘阵列具有用于在装配期间确保行进的方向平行于处理室(例如平行于注入掩模特征)的手动对齐特征。在一个例子中,首先通过使用在掩模位置处的照相机和阵列上的特征将卡盘阵列与注入掩模对齐。然后通过将具有精确对齐特征的对齐晶片从输入输送机输送到卡盘阵列来将在拾取和放置机构上的每个头与掩模对齐。阵列接着在掩模对齐照相机之下移动,且确定对齐晶片的角位移。这个角位移接着用于调节拾取和放置头。步骤重复,直到对齐是令人满意的为止。这些步骤建立固定的对齐。它们在晶片处理期间没有被系统动态地控制和改变。
拾取和放置头也可具有动态晶片对齐。例如,当晶片在气垫上浮动时,卡爪可用于推晶片以紧靠对齐销。可通过经由晶片冷却通道使气体流到卡盘中来建立这个气垫,使得这些通道提供双重目的。如果需要的话,对齐销可安装在用于高度的动态控制的压电台上。
在一个特定的例子中,提供一种离子注入系统,该系统包括真空外壳、将离子束输送到真空外壳内部的处理区内的离子注入室。第一和第二卡盘阵列被配置成分别在第一和第二轨道组件上来回骑行,其中升高机构被配置成改变在较高的位置和较低的位置之间的轨道组件的高度。第一和第二卡盘阵列中的每个具有悬臂式部分,多个处理卡盘位于悬臂式部分上。第一和第二卡盘组件中的每个被配置成当其相应的轨道组件在较高的位置中时在相应的轨道组件上在向前的方向上行进,并当其相应的轨道组件在较低的位置中时在相应的轨道组件上在向后的方向上骑行,从而在其它卡盘组件之下通过。
在所描述的离子注入系统中,交付输送机皮带位于真空外壳内部,在它的入口侧上,且移除输送机位于真空室内部,在其出口侧中。第一拾取机构被配置成从交付输送机移除晶片,并将晶片放置在第一和第二卡盘组件上。第二拾取机构被配置成从第一和第二卡盘组件移除晶片,并将晶片交付到移除输送机皮带。提供照相机来使能对第一拾取机构进行对齐。照相机被配置成拍摄第一和第二卡盘组件在位于处理区中时的图像。分析该图像以确定第一拾取机构的对齐。
卡盘组件被配置成在处理区中时以一个速度行进,并在相反或向后方向上行进时以比第一速度更快的第二速度行进。在这个布置中,当轨道组件在较高的位置中时,卡盘组件可以取决于位置以快向前或慢向前速度行进,但当轨道组件在较低的位置上时卡盘组件总是以相反的快速度行进。
第一和第二卡盘组件中的每个具有多个静电卡盘,多个静电卡盘具有气流通道。第一和第二卡盘组件被配置成将气体输送到气流通道,以便当晶片被装载在静电卡盘上时产生气垫。第一和第二卡盘组件中的每个也具有多个对齐销。可包括致动器,使得销可被致动以呈现用于晶片对齐的较高的位置并且之后呈现较低的位置。
第一和第二拾取机构中的每个包括被配置成模拟处理卡盘在第一和第二卡盘组件上的布置的多个拾取卡盘。每个拾取卡盘具有被配置成在晶片对齐流程期间推动晶片的相关晶片对齐致动器。晶片对齐致动器可被配置成迫使晶片以紧靠附接到卡盘组件的对齐销。
附图说明
合并在本说明书中并构成本说明书的一部分的附图例示本发明的实施例,并连同本描述一起用来解释和说明本发明的原理。附图被预期以图解方式示出示例性实施例的主要特征。附图并不打算描绘实际实施例的每个特征和所描绘的元件的相对尺寸,且并不按比例绘制。
图1是示出根据一个实施例的系统和架构的主要部分的横截面示意图。
图2是描绘过程流程以强调图1所示的实施例的某些特征的卡盘阵列的顶视图。
图3A和3B示出卡盘阵列系统的实施例。
图4示出与离子注入器一起使用的系统的例子。
图5示出实现晶片与卡盘的准确对齐的根据一个实施例的基板装载的顶视图。
图6是根据一个实施例的拾取卡盘的示意图。
图7A示出在卡爪打开的情况下的拾取卡盘,而图7B示出在卡爪在闭合位置上的情况下的拾取卡盘。
图8A是示出拾取卡盘具有卡爪且处理卡盘具有对齐销的布置的示意图,而图8B是图8A的布置的侧视图。
图9是示出用于将晶片输送到处理卡盘上的过程的流程图。
图10是示出用于使拾取头与处理室对齐的过程的流程图。
具体实施方式
本文公开的各种实施例提供实现处理高吞吐量,特别是用于诸如溅射和离子注入的过程的系统架构。该架构实现经过(pass-by)处理,使得在基板经过处理室时对基板进行处理。例如,基板可在离子束之下经过,使得当它横穿离子束时对它进行注入。在一些特定的例子中,离子束被制造为宽的带,使得它可同时覆盖几个基板的部分。使用这样的布置,几个基板可在束之下经过,使得基板可一起同时被处理以增加系统的吞吐量。
现在将参考附图描述创造性溅射室的实施例。图1示出用于使用被表示为C1和C2并位于真空外壳100内部的可移动卡盘阵列来处理基板的系统的部分。在图1中,处理室115由两个可移动卡盘阵列服务;使得在所有时间由处理室处理至少一个基板。处理室115可例如是具有由箭头145指示的处理区的溅射室、离子注入室等。处理区可以是例如离子束。通过具有如图1所示的可移动卡盘阵列,处理区总是被至少一个基板占据,使得室从不在闲置模式中,而相反室总是正在处理至少一个基板。
在图1的例子中,基板102到达输送机130,输送机130在这个实施例中处于真空中。在本例中,基板布置成三个并列,即,在如图1的插图编号L1中所示的三行中。此外,在本例中,每个卡盘阵列具有被布置为2x3阵列的六个卡盘106,如图1的插图编号L1中所示的。拾取头布置骑行在头顶上轨道110上,且在本例中从输送机同时拾取六个基板,并将它们输送到卡盘阵列(这里是C1)。
用于将晶片102从输送机130运送到处理卡盘106上的晶片运送机构采用一个或多个静电拾取卡盘105,静电拾取卡盘105沿着轨道110可移动并使用静电力来拾取一个或多个晶片,例如一行三个晶片102,并将晶片输送到处理卡盘106。拾取卡盘105从晶片的前表面静电地夹住晶片,并接着将晶片定位在处理卡盘106上,处理卡盘106从晶片的背侧静电地夹住晶片。这样的布置特别适合于处理太阳能电池,太阳能电池宁可原谅从前表面的处理。
同时,卡片阵列C2连续经过处理室115的处理区145,使得所有六个基板将被暴露用于处理。卡盘阵列在处理区145之下横穿时的运动是以恒定的速度,该速度在本文被称为S1。一旦卡盘阵列C1被装载有基板102,它就移动到卡盘阵列C2后面的处理位置中。以比速度S1更快的在本文被称为S2的速度完成到处理位置中的这个移动,使得在卡盘阵列C2上的基板的处理完成之前卡盘C1可被装载和移动到适当的位置用于处理。卡盘阵列C1接着以速度S1在卡盘阵列C2后面移动,使得当卡盘阵列C2离开处理区145时,卡片C1立即进入处理区145。这个状况被描绘为图2中的情况A,其中卡盘阵列C2刚刚完成处理,且卡盘阵列C1进入处理区145。在图2所示的位置中,卡片阵列C1刚刚开始进入处理区145,例如刚刚开始在注入束147之下经过。卡盘阵列C1将以速度S1例如大约35mm/sec继续缓慢移动穿过注入区147。另一方面,卡盘阵列C只是刚要离开注入束147的覆盖区。
一旦卡盘阵列C2超过处理区,即,离开离子束147的覆盖区,它就接着加速并以速度S2移动到卸载位置,卸载位置在图2中被描绘为位置B。此时,卡盘阵列C1的前边缘开始在处理区之下的处理,同时继续以速度S1移动。如在本例中所示的,卡盘阵列C1布置成使得三个基板被同时处理。当然,可同时处理更多或更少的基板,取决于处理区145的尺寸,在本例中处理区145的尺寸是离子束147的宽度。
当卡盘阵列C2停止在图1中以虚线示出的卸载台处时,卸载拾取布置125拾取基板并将它们移动到输送机135上。卡盘阵列C2接着被下降并以速度S2在卡盘阵列C1之下移动到在图2中被示为位置C的装载台。当卡盘阵列C2被装载有基板时,它移动到在卡盘阵列C1后面的处理位置中,如在图2中所示的位置D中。这个循环本身重复,使得基板总是存在于处理区145中。
图3A和3B示出卡盘阵列系统的实施例。在这个实施例中,每个卡盘阵列C1和C2具有六个卡盘352、357,其中每个卡盘可以是例如静电卡盘。卡盘阵列C1骑行在一侧上的轨道350上,而卡盘阵列C2骑行在位于与轨道350相对的位置上的轨道355上。每个卡盘阵列C1和C2可在其轨道上来回骑行,如由双向箭头指示的。可使用电动机、步进电动机、线性电动机等在轨道上移动卡盘阵列C1和C2。每个轨道被耦合到升高机构360,升高机构360呈现较高的位置和较低的位置。在装载、处理和卸载期间,升高机构360被激活以使轨道呈现较高的位置。图3A示出一状况,其中两个轨道在较高的位置上,使得所有卡盘在同一水平处。然而,在从卸载位置输送到装载位置期间,激活升高机构360来降低相应的轨道以呈现较低的位置,使得一个卡盘阵列可在另一个之下经过。这在图3B中示出,其中轨道350呈现较低的位置,且卡盘阵列C1在卡盘阵列C2之下经过。
如图3A和3B所示,每个卡盘阵列具有悬臂式架子372、374,在悬臂式架子上组装卡盘。每个悬臂式架子具有骑行在轨道上的驱动组件373、375和自由站立支撑组件374、376,卡盘附接在自由站立支撑组件374、376上,且自由站立支撑组件374、376从相应的驱动组件悬臂式向外伸展。当一个轨道组件呈现较低的位置时,相应的卡盘组件的自由站立支撑组件可在另一卡盘组件的自由站立支撑组件之下经过。此外,如图3所示,架子悬臂式向外伸展,使得当两个轨道在较高的位置上时,位于两个架子上的卡盘在行进方向上对齐,如虚线所示的那样。
图4示出与离子注入器一起使用的系统的例子。图4所示的系统用于太阳能电池的制造。在太阳能电池的制造中,有时只在基板的选定区域上执行离子注入。这样的处理的例子是选择性的发射器太阳能电池。根据图4的实施例,将掩模(见例如图1的掩模170)放置在离子束的路径中,使得只有穿过掩模中的孔的离子到达基板。图4示出使用掩模的处理如何继续进行以及使用一个数例的循环时间。
在图4中,卡盘阵列用实线示出并被示为具有在行进方向上的长度Lc,而掩模用虚线示出并被示为具有在行进方向上的长度Lm。在这个布置中,示出3x2的阵列,使得将三个晶片在宽度方向上定位成被同时处理。这个特定的掩模可用于提供在晶片的表面上的均匀掺杂,以及然后提供对太阳能电池的接触“手指”的增强掺杂。也就是说,当晶片在掩模之下被运送时,掩模的宽开口使离子的宽的不中断束经过并同时均匀地对三个晶片的表面进行掺杂。当晶片继续行进并在掩模的“梳状”区段之下出现时,只有离子的“细束”被允许穿过晶片以从而掺杂在直线中的晶片。
掺杂过程不间断地继续,使得注入源总是运转的,并总是提供离子束。图4示出在连续的操作期间的四个状态的四个快照。在状态1中,卡盘阵列C2在离子束之下以对位于其上的晶片进行注入。卡盘阵列C1的前边缘几乎进入由掩模覆盖的区域。阵列C1和C2都以慢速度S1行进。在状态2,位于卡盘阵列C2上的晶片的离子注入完成,且卡盘阵列C2的后边缘几乎离开由掩模覆盖的区域。阵列C1和C2仍然都以慢速度S1行进。
一旦阵列C2完全离开掩模的覆盖区域,在时间t23期间,它加速到速度S2并行进到卸载台,其中从阵列卸载晶片。阵列C2的轨道接着降低,且阵列C2以速度S2在阵列C1之下行进以在装载台被装载有新晶片。一旦被装载,阵列C2就再次加速到速度S2到达恰好在阵列C1后面的位置,并接着减慢来以速度S1在阵列C1后面行进。状态3是当阵列C2的前边缘几乎进入掩模的覆盖区域时阵列C2的快照。处理然后以速度S1继续,且如图4所示,卡盘阵列C1的后边缘将离开掩模的覆盖区域,这定义一个循环。该过程接着本身无止境地重复,只要晶片被装载到系统上。
如可从图4的例子理解的,一个卡盘阵列的循环时间是t12+t23+t34+t41。在一个例子中,这个循环时间是大约18秒。处理时间是从当卡盘阵列的前边缘进入掩模覆盖区时的时间到阵列的后边缘离开掩模覆盖区时的时间。然而,卡盘阵列以处理速度(即,S1)行进时的时间较长,且在图4中被示为t12+t23+t34=18-t41。另一方面,图4示出卡盘阵列以速度S2行进并被卸载和装载有新晶片时的时间是t23,其在一个例子中是大约6秒。
如可从上文理解的,为了以高吞吐量速度进行正确的离子注入,需要以高对齐准确度将晶片装载到卡盘上。然而,因为晶片在输送机上到达,维持准确的对齐很难。图5示出根据一个实施例的基板装载的顶视图,其实现晶片与卡盘的准确对齐。在这个例子中,六个基板被同时装载到六个卡盘上。
图5是具有用于同时装载6个晶片502的静电卡盘505的3x2阵列的图1的拾取头105的顶视图。能够围绕轴旋转对齐每个卡盘505,如双向箭头590所指示的那样。执行对齐使得晶片与掩模对齐,并在处理开始之前完成。例如,如图1所示,照相机119可位于掩模170附近,以便对掩模和卡盘阵列进行成像。在图1中,可围绕轴190旋转地对齐拾取头。为了执行对齐,可以使用具有对齐掩模的特殊对齐晶片,从而可使用照相机119来成像它与掩模的对齐。一旦针对特定的掩模设置了对齐,对齐就保持静止且不需要针对每个循环改变对齐。实际上,这个旋转对齐仅仅是装载拾取头105所需的,而对于卸载拾取头125是不需要的。
通过可移动卡爪来将每个单独的晶片对齐到单独的处理卡盘,可移动卡爪推晶片以紧靠销580。当晶片被卡盘505拾取时,卡爪585在打开位置上,并接着例如通过重力来闭合卡爪585以将晶片压到用于对齐的销580。销580可以固定的,或如下面将解释的,可以例如通过压电来移动销580。如关于图8的例子将描述的,气流可用于在晶片与卡盘对齐时使晶片浮动。
图6是根据一个实施例的拾取头的单个拾取卡盘(例如拾取头105的拾取卡盘505)的示意图。如图5所示,六个这样的拾取卡盘505可布置在一个拾取头105上,以便同时运送六个晶片。在图6的实施例中,每个拾取卡盘具有围绕轴690的单独径向对齐。例如,每当新掩模被安装在离子注入系统上时,可单独地径向对齐每个拾取卡盘,使得当它们将晶片输送到处理卡盘时,晶片与掩模对齐。一旦对齐完成,处理就可开始,且直到如当新掩模被安装时的时间为止可不需要进一步的对齐。
每个晶片由静电卡盘605托住,并与处理卡盘对齐。在一个实施例中,通过具有在两侧上的静止销和在两个背侧上的可移动对齐杠杆来对齐晶片。在图6中,静止销680是固定的,且布置成使得一个销居中于晶片的一侧上,且两个销以90°角设置在晶片的相邻侧面上。如图5所示,两个销设置在作为晶片的前边缘的侧面上,即,在晶片的运送期间作为前边缘的晶片的侧面。两个可移动杠杆(在图6中的两个卡爪685)推晶片以紧靠静止销,以便使晶片对齐。杠杆可具有限定的接触点(例如,销或突起),使得只有限定的接触点接触晶片并迫使晶片以紧靠静止销。如图5所示,一些卡爪只有单个接触点,而其它卡爪具有两个或多个接触点。在图5中,推动晶片的前边缘的卡爪具有两个接触点512。
图7A和7B示出一个例子,其中杠杆780从晶片的两侧推晶片以呈现对齐位置。在图7A中,杠杆780在打开位置上,即,不推晶片702。晶片702由围绕轴790对齐的静电卡盘705保持。在图7B中,杠杆780呈现闭合位置并推晶片以呈现对齐位置。
图8A和8B示出另一实施例,其中对齐部分地由拾取卡盘执行且部分地由处理卡盘执行。在图8A和8B的实施例中,静电卡盘805围绕轴890径向地对齐并静电地保持晶片802。在静电卡盘805保持晶片802时的时间期间,卡爪885在打开位置上,使得它们不推晶片802。当拾取卡盘将晶片输送到处理卡盘806时,经由卡盘中的通道833在晶片之下泵送气体。这产生气垫,晶片在气垫上浮动。此时,杠杆885通过重力或致动器呈现闭合位置,以推晶片以紧靠固定销880。如在这个实施例中示出的,固定销880附接到卡盘阵列的底部874,处理卡盘806安装在卡盘阵列的底部874上。一旦杠杆885推晶片以紧靠销880,气流就可终止且处理卡盘被供能以便在对齐位置上夹住晶片。此外,在这个实施例中,销880在z方向上是可移动的,即,被升高用于对齐并在运送和处理期间(如双向箭头所示的)被降低。
图9是示出用于使用在图8A和8B中所示的实施例将晶片输送到处理卡盘上的过程的流程图。可使用其它所公开的实施例来执行类似的过程。在上面描述的实施例中,从输送机皮带到处理卡盘上执行输送,反之亦然,但可在从例如晶片匣、晶片托盘、机器人手臂等输送时执行类似的过程。该过程在步骤900通过将拾取头放置在待拾取的晶片之上的拾取位置处来开始。在步骤905中,拾取头被激活以通过例如真空、静电力、机械附接等来拾取晶片。在步骤910中,拾取头移动到例如在处理卡盘之上的放较低的位置。
因为这个过程与图8A和8B的实施例有关,在步骤915中,气流被激活,以便使气体流经处理卡盘。这个步骤是可选的,且只在气流通道被包括在处理卡盘中时才执行这个步骤。这样的气体通道通常为了流动冷却气体(例如氦气)的目的而被包括卡盘中,但相同的布置可用于产生气垫以使晶片在处理卡盘之上浮动的目的。可由流动的氦气、氩气、氮气、空气等维持气垫。此外,如果被使用,此时,可将对齐销升高到其向上对齐位置。
晶片接着在步骤920被释放到气垫上,且当拾取头被升高到被放下的晶片之上一点时,对齐机构在步骤925使晶片在卡盘之上对齐。对齐机构可以是如在上面的实施例中示出的静止销和可移动杠杆或卡爪。在步骤930中,气流减少,直到它停止为止,使得晶片可和缓地降低到卡盘上,而不脱离对齐,且在步骤935中,将晶片夹到处理卡盘上。这可通过真空、机械夹持、静电力等来完成。在步骤940,移走拾取头,且如果使用对齐销的话,则降低对齐销。
图10是示出用于使拾取头与处理室对齐的过程的流程图。这被完成以使拾取头的径向位置与处理室对齐,所以它只在该过程产生在晶片上的特征时完成,且其中特征与晶片的拓扑的对齐是关键的。否则,这个过程不需要被执行。因此例如,如果处理产生在晶片的整个表面之上的均匀层,则没有对齐是需要的。然而,如果处理产生特征,例如在太阳能电池上的接触手指,则可在处理开始之前执行对齐过程。在对齐完成之后,处理可开始,而不需要进一步的对齐。
在步骤1000中,拾取头移动到适当位置上并装载晶片。如果使用多个拾取卡盘,则可装载多个晶片。此外,在一个例子中,可使用特别设计的对齐晶片。例如,该晶片可具有特殊标记以帮助确定正确的对齐。在步骤1005,移动拾取头以将晶片放到处理卡盘上。然后在步骤1010,卡盘阵列移动到晶片处理位置上,且在步骤1015,拍摄卡盘和/或晶片的图像。例如,如果系统用于通过掩模来进行离子注入,则图像可以是如与对齐晶片上的标记对齐的掩模的图像。在步骤1020,检查图像,且确定对齐是否是正确的。如果不正确,则该过程继续进行到步骤1025,在步骤1025中执行到拾取头的正确的对齐。然后该过程重复以确认对齐。如果在步骤1020确定对齐是正确的,则在步骤1030,正常处理可开始。
应理解,本文描述的过程和技术并不固有地涉及任何特定的装置,且可由部件的任何适当的组合实现。此外,可根据本文描述的教导来使用各种类型的通用设备。联系特定的例子描述了本发明,这些例子在所有方面被规定为是例证性的而不是限制性的。本领域中的技术人员将认识到,很多不同的组合将适合于实施本发明。
而且,根据说明书的考虑和在本文公开的本发明的实践中,本发明的其它实施方式将对本领域中的技术人员来说变得明显。可单独地或以任何组合来使用所描述的实施例的各种方面和/或部件。意图是说明书和例子仅被考虑为示例性的,本发明的真实范围和精神由下面的权利要求指示。
Claims (11)
1.一种基板处理系统,包括:
真空外壳;
处理室,其附接到所述真空外壳并在所述真空外壳内限定处理区;
第一轨道组件,其被安置于所述真空外壳内部在所述处理室的一侧上;
第一升高机构,其耦合到所述第一轨道组件并被配置成将所述第一轨道组件提升到升高后的位置以及将所述第一轨道组件降低到较低的位置;
第二轨道组件,其被安置于所述真空外壳内部在所述第一轨道组件的相对侧上;
第二升高机构,其耦合到所述第二轨道组件并被配置成将所述第二轨道组件提升到升高后的位置以及将所述第二轨道组件降低到较低的位置;
第一悬臂式架子,其被配置为骑行在所述第一轨道组件上;
第二悬臂式架子,其被配置为骑行在所述第二轨道组件上;
多个卡盘,所述多个卡盘位于所述第一悬臂式架子和所述第二悬臂式架子上;
其中,当所述第一升高机构和所述第二升高机构均呈现升高后的位置时,所有的所述卡盘均是水平的并且在同一水平上,但是当所述第一升高机构和所述第二升高机构中的一个升高机构呈现较低的位置时,所述第一悬臂式架子和所述第二悬臂式架子中的一个悬臂式架子上的卡盘是水平的并且能够在所述第一悬臂式架子和所述第二悬臂式架子中的另一个悬臂式架子之下通过。
2.如权利要求1所述的系统,其中所述第一悬臂式架子和所述第二悬臂式架子中的每个悬臂式架子分别具有骑行在所述第一轨道组件和所述第二轨道组件上的驱动组件。
3.如权利要求2所述的系统,其中所述第一悬臂式架子和所述第二悬臂式架子中的每个悬臂式架子还包括自由站立支撑组件,在所述自由站立支撑组件上附接有所述多个卡盘,并且所述自由站立支撑组件从相应的驱动组件悬臂式向外伸展。
4.如权利要求3所述的系统,其中,当所述第一轨道组件和所述第二轨道组件之一处于所述较低的位置时,相应的驱动组件的自由站立支撑组件能够在另一驱动组件的自由站立支撑组件之下经过。
5.如权利要求3所述的系统,其中,当所述第一轨道组件和所述第二轨道组件两者均在较高的位置上时,位于两个自由站立支撑组件上的所述多个卡盘在行进方向上对齐。
6.如权利要求1所述的系统,其中,所述处理室包括离子注入室。
7.如权利要求6所述的系统,其中,所述处理区包括离子束,并且其中,所述处理区总是被至少一个基板占据,使得所述室从不处于闲置模式中,而相反所述室总是正在处理至少一个基板。
8.如权利要求7所述的系统,其中,所述基板在所述离子束之下经过,使得当所述基板穿过所述离子束时对所述基板进行注入。
9.如权利要求6所述的系统,其中,所述离子束被形成为宽的带,使得所述离子束能够同时覆盖若干个基板的部分。
10.如权利要求6所述的系统,还包括放置在所述离子束的路径中的掩模。
11.如权利要求10所述的系统,其中,所述掩模包括梳状区段,使得只有离子的细束被允许传送到所述基板,从而以直线对所述基板进行掺杂。
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CN106847736A (zh) | 2017-06-13 |
JP2015504598A (ja) | 2015-02-12 |
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WO2013070978A2 (en) | 2013-05-16 |
EP2777069A4 (en) | 2015-01-14 |
TWI506719B (zh) | 2015-11-01 |
CN104428883A (zh) | 2015-03-18 |
US9875922B2 (en) | 2018-01-23 |
HK1207203A1 (zh) | 2016-01-22 |
SG11201402177XA (en) | 2014-06-27 |
WO2013070978A3 (en) | 2013-08-08 |
MY175007A (en) | 2020-06-02 |
TW201320229A (zh) | 2013-05-16 |
EP2777069A2 (en) | 2014-09-17 |
US9324598B2 (en) | 2016-04-26 |
KR20140110851A (ko) | 2014-09-17 |
JP2017085136A (ja) | 2017-05-18 |
JP6352376B2 (ja) | 2018-07-04 |
US20130115764A1 (en) | 2013-05-09 |
JP6068491B2 (ja) | 2017-01-25 |
SG10201508582WA (en) | 2015-11-27 |
CN104428883B (zh) | 2017-02-22 |
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