CN104428883B - 基板处理系统和方法 - Google Patents

基板处理系统和方法 Download PDF

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CN104428883B
CN104428883B CN201280061122.0A CN201280061122A CN104428883B CN 104428883 B CN104428883 B CN 104428883B CN 201280061122 A CN201280061122 A CN 201280061122A CN 104428883 B CN104428883 B CN 104428883B
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chuck
chuck array
array
chip
rail assembly
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CN104428883A (zh
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T·佩德森
H·希斯尔迈尔
M·春
V·普拉巴卡
B·阿迪博
T·布卢克
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Intevac Inc
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Abstract

一种用于处理基板的系统具有真空外壳和定位成处理在真空外壳内部的处理区中的晶片的处理室。提供两个轨道组件，一个轨道组件在处理区的每侧上。两个卡盘阵列每个在轨道组件之一骑行上，使得每个卡盘阵列在一个轨道组件上悬臂式伸展并支撑多个卡盘。轨道组件耦合到升高机构，其将轨道放置在用于处理的较高的位置上以及放置在用于返回卡盘组件的较低的位置处用于装载新晶片。拾取头组件将晶片从输送机装载到卡盘组件上。拾取头具有从晶片的正侧拾取晶片的多个静电卡盘。在处理卡盘中的冷却通道用于产生气垫以在由拾取头输送时帮助使晶片对齐。

Description

基板处理系统和方法
相关案子
本申请要求2011年11月8日提交的美国临时申请序列号61/557363的优先权利益，该临时申请的公开文本通过引用被全部并入本文。
技术领域
本申请涉及用于基板处理，例如硅基板处理以形成半导体电路、太阳能电池、平板显示器等的系统和方法。
背景技术
基板处理系统在本领域中是公知的。基板处理系统的例子包括溅射和离子注入系统。虽然在很多这样的系统中基板在处理期间是静止的，这样的静止系统在满足对高吞吐量处理的最近要求方面有困难。高吞吐量处理对处理基板(例如太阳能电池)特别严格。因此，需要新的系统架构来满足这个要求。
发明内容
包括本发明的下列概述，以便提供对本发明的一些方面和特征的基本理解。该概述不是本发明的广泛概述，且因此它并不打算特别标识本发明的关键或重要元件或描绘本发明的范围。它的唯一目的是以简化的形式介绍本发明的一些概念作为下面介绍的更详细的描述的序言。
在本文公开的是实现基板的高吞吐量处理的处理系统和方法。一个实施例提供一种系统，其中基板在处理系统(例如溅射目标或离子注入束)的前面连续移动。在处理系统的前面行进期间，基板以一个速度移动，而在来/往装载和卸载位置行进期间，基板以比第一速度高得多的第二速度移动。这实现系统的总高吞吐量。
各种所公开的实施例提供用于使用两个卡盘(chuck)阵列来处理基板(例如离子注入)的真空处理系统。在所述实施例中，每个卡盘阵列具有位于每个阵列上的静电卡盘上的两行晶片，但其它实施例可使用一行或多行。将阵列安装在室的相对侧上，使得它们可每个都具有晶片/气体连接和电连接，而不干扰另一阵列的操作。在每个阵列上使用至少两行实现连续的处理，即，处理室的连续利用而没有闲置时间。例如，通过使用两行用于离子注入，离子束可总是被保持在一个卡盘阵列上，同时另一阵列被卸载/装载并在经处理的阵列离开束之前返回到处理位置。
在所公开的实施例中，同时装载在卡盘阵列上的所有晶片。晶片成排地来自装载锁，几个晶片并列，例如三个晶片并列。当两行存在于进入的输送机上时，晶片被升高到拾取和放置机构。在一个实施例中，拾取和放置机构使用静电卡盘来保持晶片，但也可使用其它机构(例如真空装置)。系统可以可选地包括用于使用正确的对齐将晶片定位在卡盘上的动态晶片定位机构以确保处理与晶片对齐。例如，当执行离子注入时，对齐确保注入特征垂直于或平行于晶片边缘。
在一个实施例中，卡盘阵列具有用于在装配期间确保行进的方向平行于处理室(例如平行于注入掩模特征)的手动对齐特征。在一个例子中，首先通过使用在掩模位置处的照相机和阵列上的特征将卡盘阵列与注入掩模对齐。然后通过将具有精确对齐特征的对齐晶片从输入输送机输送到卡盘阵列来将在拾取和放置机构上的每个头与掩模对齐。阵列接着在掩模对齐照相机之下移动，且确定对齐晶片的角位移。这个角位移接着用于调节拾取和放置头。步骤重复，直到对齐是令人满意的为止。这些步骤建立固定的对齐。它们在晶片处理期间没有被系统动态地控制和改变。
拾取和放置头也可具有动态晶片对齐。例如，当晶片在气垫上浮动时，卡爪可用于推晶片以紧靠对齐销。可通过经由晶片冷却通道使气体流到卡盘中来建立这个气垫，使得这些通道提供双重目的。如果需要的话，对齐销可安装在用于高度的动态控制的压电台上。
在一个特定的例子中，提供一种离子注入系统，该系统包括真空外壳、将离子束输送到真空外壳内部的处理区内的离子注入室。第一和第二卡盘阵列被配置成分别在第一和第二轨道组件上来回骑行，其中升高机构被配置成改变在较高的位置和较低的位置之间的轨道组件的高度。第一和第二卡盘阵列中的每个具有悬臂式部分，多个处理卡盘位于悬臂式部分上。第一和第二卡盘组件中的每个被配置成当其相应的轨道组件在较高的位置中时在相应的轨道组件上在向前的方向上行进，并当其相应的轨道组件在较低的位置中时在相应的轨道组件上在向后的方向上骑行，从而在其它卡盘组件之下通过。
在所描述的离子注入系统中，交付输送机皮带位于真空外壳内部，在它的入口侧上，且移除输送机位于真空室内部，在其出口侧中。第一拾取机构被配置成从交付输送机移除晶片，并将晶片放置在第一和第二卡盘组件上。第二拾取机构被配置成从第一和第二卡盘组件移除晶片，并将晶片交付到移除输送机皮带。提供照相机来使能对第一拾取机构进行对齐。照相机被配置成拍摄第一和第二卡盘组件在位于处理区中时的图像。分析该图像以确定第一拾取机构的对齐。
卡盘组件被配置成在处理区中时以一个速度行进，并在相反或向后方向上行进时以比第一速度更快的第二速度行进。在这个布置中，当轨道组件在较高的位置中时，卡盘组件可以取决于位置以快向前或慢向前速度行进，但当轨道组件在较低的位置上时卡盘组件总是以相反的快速度行进。
第一和第二卡盘组件中的每个具有多个静电卡盘，多个静电卡盘具有气流通道。第一和第二卡盘组件被配置成将气体输送到气流通道，以便当晶片被装载在静电卡盘上时产生气垫。第一和第二卡盘组件中的每个也具有多个对齐销。可包括致动器，使得销可被致动以呈现用于晶片对齐的较高的位置并且之后呈现较低的位置。
第一和第二拾取机构中的每个包括被配置成模拟处理卡盘在第一和第二卡盘组件上的布置的多个拾取卡盘。每个拾取卡盘具有被配置成在晶片对齐流程期间推动晶片的相关晶片对齐致动器。晶片对齐致动器可被配置成迫使晶片以紧靠附接到卡盘组件的对齐销。
附图说明
合并在本说明书中并构成本说明书的一部分的附图例示本发明的实施例，并连同本描述一起用来解释和说明本发明的原理。附图被预期以图解方式示出示例性实施例的主要特征。附图并不打算描绘实际实施例的每个特征和所描绘的元件的相对尺寸，且并不按比例绘制。
图1是示出根据一个实施例的系统和架构的主要部分的横截面示意图。
图2是描绘过程流程以强调图1所示的实施例的某些特征的卡盘阵列的顶视图。
图3A和3B示出卡盘阵列系统的实施例。
图4示出与离子注入器一起使用的系统的例子。
图5示出实现晶片与卡盘的准确对齐的根据一个实施例的基板装载的顶视图。
图6是根据一个实施例的拾取卡盘的示意图。
图7A示出在卡爪打开的情况下的拾取卡盘，而图7B示出在卡爪在闭合位置上的情况下的拾取卡盘。
图8A是示出拾取卡盘具有卡爪且处理卡盘具有对齐销的布置的示意图，而图8B是图8A的布置的侧视图。
图9是示出用于将晶片输送到处理卡盘上的过程的流程图。
图10是示出用于使拾取头与处理室对齐的过程的流程图。
具体实施方式
本文公开的各种实施例提供实现处理高吞吐量，特别是用于诸如溅射和离子注入的过程的系统架构。该架构实现经过(pass-by)处理，使得在基板经过处理室时对基板进行处理。例如，基板可在离子束之下经过，使得当它横穿离子束时对它进行注入。在一些特定的例子中，离子束被制造为宽的带，使得它可同时覆盖几个基板的部分。使用这样的布置，几个基板可在束之下经过，使得基板可一起同时被处理以增加系统的吞吐量。
现在将参考附图描述创造性溅射室的实施例。图1示出用于使用被表示为C1和C2并位于真空外壳100内部的可移动卡盘阵列来处理基板的系统的部分。在图1中，处理室115由两个可移动卡盘阵列服务；使得在所有时间由处理室处理至少一个基板。处理室115可例如是具有由箭头145指示的处理区的溅射室、离子注入室等。处理区可以是例如离子束。通过具有如图1所示的可移动卡盘阵列，处理区总是被至少一个基板占据，使得室从不在闲置模式中，而相反室总是正在处理至少一个基板。
在图1的例子中，基板102到达输送机130，输送机130在这个实施例中处于真空中。在本例中，基板布置成三个并列，即，在如图1的插图编号L1中所示的三行中。此外，在本例中，每个卡盘阵列具有被布置为2x3阵列的六个卡盘106，如图1的插图编号L1中所示的。拾取头布置骑行在头顶上轨道110上，且在本例中从输送机同时拾取六个基板，并将它们输送到卡盘阵列(这里是C1)。
用于将晶片102从输送机130运送到处理卡盘106上的晶片运送机构采用一个或多个静电拾取卡盘105，静电拾取卡盘105沿着轨道110可移动并使用静电力来拾取一个或多个晶片，例如一行三个晶片102，并将晶片输送到处理卡盘106。拾取卡盘105从晶片的前表面静电地夹住晶片，并接着将晶片定位在处理卡盘106上，处理卡盘106从晶片的背侧静电地夹住晶片。这样的布置特别适合于处理太阳能电池，太阳能电池宁可原谅从前表面的处理。
同时，卡片阵列C2连续经过处理室115的处理区145，使得所有六个基板将被暴露用于处理。卡盘阵列在处理区145之下横穿时的运动是以恒定的速度，该速度在本文被称为S1。一旦卡盘阵列C1被装载有基板102，它就移动到卡盘阵列C2后面的处理位置中。以比速度S1更快的在本文被称为S2的速度完成到处理位置中的这个移动，使得在卡盘阵列C2上的基板的处理完成之前卡盘C1可被装载和移动到适当的位置用于处理。卡盘阵列C1接着以速度S1在卡盘阵列C2后面移动，使得当卡盘阵列C2离开处理区145时，卡片C1立即进入处理区145。这个状况被描绘为图2中的情况A，其中卡盘阵列C2刚刚完成处理，且卡盘阵列C1进入处理区145。在图2所示的位置中，卡片阵列C1刚刚开始进入处理区145，例如刚刚开始在注入束147之下经过。卡盘阵列C1将以速度S1例如大约35mm/sec继续缓慢移动穿过注入区147。另一方面，卡盘阵列C只是刚要离开注入束147的覆盖区。
一旦卡盘阵列C2超过处理区，即，离开离子束147的覆盖区，它就接着加速并以速度S2移动到卸载位置，卸载位置在图2中被描绘为位置B。此时，卡盘阵列C1的前边缘开始在处理区之下的处理，同时继续以速度S1移动。如在本例中所示的，卡盘阵列C1布置成使得三个基板被同时处理。当然，可同时处理更多或更少的基板，取决于处理区145的尺寸，在本例中处理区145的尺寸是离子束147的宽度。
当卡盘阵列C2停止在图1中以虚线示出的卸载台处时，卸载拾取布置125拾取基板并将它们移动到输送机135上。卡盘阵列C2接着被下降并以速度S2在卡盘阵列C1之下移动到在图2中被示为位置C的装载台。当卡盘阵列C2被装载有基板时，它移动到在卡盘阵列C1后面的处理位置中，如在图2中所示的位置D中。这个循环本身重复，使得基板总是存在于处理区145中。
图3A和3B示出卡盘阵列系统的实施例。在这个实施例中，每个卡盘阵列C1和C2具有六个卡盘352、357，其中每个卡盘可以是例如静电卡盘。卡盘阵列C1骑行在一侧上的轨道350上，而卡盘阵列C2骑行在位于与轨道350相对的位置上的轨道355上。每个卡盘阵列C1和C2可在其轨道上来回骑行，如由双向箭头指示的。可使用电动机、步进电动机、线性电动机等在轨道上移动卡盘阵列C1和C2。每个轨道被耦合到升高机构360，升高机构360呈现较高的位置和较低的位置。在装载、处理和卸载期间，升高机构360被激活以使轨道呈现较高的位置。图3A示出一状况，其中两个轨道在较高的位置上，使得所有卡盘在同一水平处。然而，在从卸载位置输送到装载位置期间，激活升高机构360来降低相应的轨道以呈现较低的位置，使得一个卡盘阵列可在另一个之下经过。这在图3B中示出，其中轨道350呈现较低的位置，且卡盘阵列C1在卡盘阵列C2之下经过。
如图3A和3B所示，每个卡盘阵列具有悬臂式架子372、374，在悬臂式架子上组装卡盘。每个悬臂式架子具有骑行在轨道上的驱动组件373、375和自由站立支撑组件374、376，卡盘附接在自由站立支撑组件374、376上，且自由站立支撑组件374、376从相应的驱动组件悬臂式向外伸展。当一个轨道组件呈现较低的位置时，相应的卡盘组件的自由站立支撑组件可在另一卡盘组件的自由站立支撑组件之下经过。此外，如图3所示，架子悬臂式向外伸展，使得当两个轨道在较高的位置上时，位于两个架子上的卡盘在行进方向上对齐，如虚线所示的那样。
图4示出与离子注入器一起使用的系统的例子。图4所示的系统用于太阳能电池的制造。在太阳能电池的制造中，有时只在基板的选定区域上执行离子注入。这样的处理的例子是选择性的发射器太阳能电池。根据图4的实施例，将掩模(见例如图1的掩模170)放置在离子束的路径中，使得只有穿过掩模中的孔的离子到达基板。图4示出使用掩模的处理如何继续进行以及使用一个数例的循环时间。
在图4中，卡盘阵列用实线示出并被示为具有在行进方向上的长度Lc，而掩模用虚线示出并被示为具有在行进方向上的长度Lm。在这个布置中，示出3x2的阵列，使得将三个晶片在宽度方向上定位成被同时处理。这个特定的掩模可用于提供在晶片的表面上的均匀掺杂，以及然后提供对太阳能电池的接触“手指”的增强掺杂。也就是说，当晶片在掩模之下被运送时，掩模的宽开口使离子的宽的不中断束经过并同时均匀地对三个晶片的表面进行掺杂。当晶片继续行进并在掩模的“梳状”区段之下出现时，只有离子的“细束”被允许穿过晶片以从而掺杂在直线中的晶片。
掺杂过程不间断地继续，使得注入源总是运转的，并总是提供离子束。图4示出在连续的操作期间的四个状态的四个快照。在状态1中，卡盘阵列C2在离子束之下以对位于其上的晶片进行注入。卡盘阵列C1的前边缘几乎进入由掩模覆盖的区域。阵列C1和C2都以慢速度S1行进。在状态2，位于卡盘阵列C2上的晶片的离子注入完成，且卡盘阵列C2的后边缘几乎离开由掩模覆盖的区域。阵列C1和C2仍然都以慢速度S1行进。
一旦阵列C2完全离开掩模的覆盖区域，在时间t23期间，它加速到速度S2并行进到卸载台，其中从阵列卸载晶片。阵列C2的轨道接着降低，且阵列C2以速度S2在阵列C1之下行进以在装载台被装载有新晶片。一旦被装载，阵列C2就再次加速到速度S2到达恰好在阵列C1后面的位置，并接着减慢来以速度S1在阵列C1后面行进。状态3是当阵列C2的前边缘几乎进入掩模的覆盖区域时阵列C2的快照。处理然后以速度S1继续，且如图4所示，卡盘阵列C1的后边缘将离开掩模的覆盖区域，这定义一个循环。该过程接着本身无止境地重复，只要晶片被装载到系统上。
如可从图4的例子理解的，一个卡盘阵列的循环时间是t12+t23+t34+t41。在一个例子中，这个循环时间是大约18秒。处理时间是从当卡盘阵列的前边缘进入掩模覆盖区时的时间到阵列的后边缘离开掩模覆盖区时的时间。然而，卡盘阵列以处理速度(即，S1)行进时的时间较长，且在图4中被示为t12+t23+t34＝18-t41。另一方面，图4示出卡盘阵列以速度S2行进并被卸载和装载有新晶片时的时间是t23，其在一个例子中是大约6秒。
如可从上文理解的，为了以高吞吐量速度进行正确的离子注入，需要以高对齐准确度将晶片装载到卡盘上。然而，因为晶片在输送机上到达，维持准确的对齐很难。图5示出根据一个实施例的基板装载的顶视图，其实现晶片与卡盘的准确对齐。在这个例子中，六个基板被同时装载到六个卡盘上。
图5是具有用于同时装载6个晶片502的静电卡盘505的3x2阵列的图1的拾取头105的顶视图。能够围绕轴旋转对齐每个卡盘505，如双向箭头590所指示的那样。执行对齐使得晶片与掩模对齐，并在处理开始之前完成。例如，如图1所示，照相机119可位于掩模170附近，以便对掩模和卡盘阵列进行成像。在图1中，可围绕轴190旋转地对齐拾取头。为了执行对齐，可以使用具有对齐掩模的特殊对齐晶片，从而可使用照相机119来成像它与掩模的对齐。一旦针对特定的掩模设置了对齐，对齐就保持静止且不需要针对每个循环改变对齐。实际上，这个旋转对齐仅仅是装载拾取头105所需的，而对于卸载拾取头125是不需要的。
通过可移动卡爪来将每个单独的晶片对齐到单独的处理卡盘，可移动卡爪推晶片以紧靠销580。当晶片被卡盘505拾取时，卡爪585在打开位置上，并接着例如通过重力来闭合卡爪585以将晶片压到用于对齐的销580。销580可以固定的，或如下面将解释的，可以例如通过压电来移动销580。如关于图8的例子将描述的，气流可用于在晶片与卡盘对齐时使晶片浮动。
图6是根据一个实施例的拾取头的单个拾取卡盘(例如拾取头105的拾取卡盘505)的示意图。如图5所示，六个这样的拾取卡盘505可布置在一个拾取头105上，以便同时运送六个晶片。在图6的实施例中，每个拾取卡盘具有围绕轴690的单独径向对齐。例如，每当新掩模被安装在离子注入系统上时，可单独地径向对齐每个拾取卡盘，使得当它们将晶片输送到处理卡盘时，晶片与掩模对齐。一旦对齐完成，处理就可开始，且直到如当新掩模被安装时的时间为止可不需要进一步的对齐。
每个晶片由静电卡盘605托住，并与处理卡盘对齐。在一个实施例中，通过具有在两侧上的静止销和在两个背侧上的可移动对齐杠杆来对齐晶片。在图6中，静止销680是固定的，且布置成使得一个销居中于晶片的一侧上，且两个销以90°角设置在晶片的相邻侧面上。如图5所示，两个销设置在作为晶片的前边缘的侧面上，即，在晶片的运送期间作为前边缘的晶片的侧面。两个可移动杠杆(在图6中的两个卡爪685)推晶片以紧靠静止销，以便使晶片对齐。杠杆可具有限定的接触点(例如，销或突起)，使得只有限定的接触点接触晶片并迫使晶片以紧靠静止销。如图5所示，一些卡爪只有单个接触点，而其它卡爪具有两个或多个接触点。在图5中，推动晶片的前边缘的卡爪具有两个接触点512。
图7A和7B示出一个例子，其中杠杆780从晶片的两侧推晶片以呈现对齐位置。在图7A中，杠杆780在打开位置上，即，不推晶片702。晶片702由围绕轴790对齐的静电卡盘705保持。在图7B中，杠杆780呈现闭合位置并推晶片以呈现对齐位置。
图8A和8B示出另一实施例，其中对齐部分地由拾取卡盘执行且部分地由处理卡盘执行。在图8A和8B的实施例中，静电卡盘805围绕轴890径向地对齐并静电地保持晶片802。在静电卡盘805保持晶片802时的时间期间，卡爪885在打开位置上，使得它们不推晶片802。当拾取卡盘将晶片输送到处理卡盘806时，经由卡盘中的通道833在晶片之下泵送气体。这产生气垫，晶片在气垫上浮动。此时，杠杆885通过重力或致动器呈现闭合位置，以推晶片以紧靠固定销880。如在这个实施例中示出的，固定销880附接到卡盘阵列的底部874，处理卡盘806安装在卡盘阵列的底部874上。一旦杠杆885推晶片以紧靠销880，气流就可终止且处理卡盘被供能以便在对齐位置上夹住晶片。此外，在这个实施例中，销880在z方向上是可移动的，即，被升高用于对齐并在运送和处理期间(如双向箭头所示的)被降低。
图9是示出用于使用在图8A和8B中所示的实施例将晶片输送到处理卡盘上的过程的流程图。可使用其它所公开的实施例来执行类似的过程。在上面描述的实施例中，从输送机皮带到处理卡盘上执行输送，反之亦然，但可在从例如晶片匣、晶片托盘、机器人手臂等输送时执行类似的过程。该过程在步骤900通过将拾取头放置在待拾取的晶片之上的拾取位置处来开始。在步骤905中，拾取头被激活以通过例如真空、静电力、机械附接等来拾取晶片。在步骤910中，拾取头移动到例如在处理卡盘之上的放较低的位置。
因为这个过程与图8A和8B的实施例有关，在步骤915中，气流被激活，以便使气体流经处理卡盘。这个步骤是可选的，且只在气流通道被包括在处理卡盘中时才执行这个步骤。这样的气体通道通常为了流动冷却气体(例如氦气)的目的而被包括卡盘中，但相同的布置可用于产生气垫以使晶片在处理卡盘之上浮动的目的。可由流动的氦气、氩气、氮气、空气等维持气垫。此外，如果被使用，此时，可将对齐销升高到其向上对齐位置。
晶片接着在步骤920被释放到气垫上，且当拾取头被升高到被放下的晶片之上一点时，对齐机构在步骤925使晶片在卡盘之上对齐。对齐机构可以是如在上面的实施例中示出的静止销和可移动杠杆或卡爪。在步骤930中，气流减少，直到它停止为止，使得晶片可和缓地降低到卡盘上，而不脱离对齐，且在步骤935中，将晶片夹到处理卡盘上。这可通过真空、机械夹持、静电力等来完成。在步骤940，移走拾取头，且如果使用对齐销的话，则降低对齐销。
图10是示出用于使拾取头与处理室对齐的过程的流程图。这被完成以使拾取头的径向位置与处理室对齐，所以它只在该过程产生在晶片上的特征时完成，且其中特征与晶片的拓扑的对齐是关键的。否则，这个过程不需要被执行。因此例如，如果处理产生在晶片的整个表面之上的均匀层，则没有对齐是需要的。然而，如果处理产生特征，例如在太阳能电池上的接触手指，则可在处理开始之前执行对齐过程。在对齐完成之后，处理可开始，而不需要进一步的对齐。
在步骤1000中，拾取头移动到适当位置上并装载晶片。如果使用多个拾取卡盘，则可装载多个晶片。此外，在一个例子中，可使用特别设计的对齐晶片。例如，该晶片可具有特殊标记以帮助确定正确的对齐。在步骤1005，移动拾取头以将晶片放到处理卡盘上。然后在步骤1010，卡盘阵列移动到晶片处理位置上，且在步骤1015，拍摄卡盘和/或晶片的图像。例如，如果系统用于通过掩模来进行离子注入，则图像可以是如与对齐晶片上的标记对齐的掩模的图像。在步骤1020，检查图像，且确定对齐是否是正确的。如果不正确，则该过程继续进行到步骤1025，在步骤1025中执行到拾取头的正确的对齐。然后该过程重复以确认对齐。如果在步骤1020确定对齐是正确的，则在步骤1030，正常处理可开始。
应理解，本文描述的过程和技术并不固有地涉及任何特定的装置，且可由部件的任何适当的组合实现。此外，可根据本文描述的教导来使用各种类型的通用设备。联系特定的例子描述了本发明，这些例子在所有方面被规定为是例证性的而不是限制性的。本领域中的技术人员将认识到，很多不同的组合将适合于实施本发明。
而且，根据说明书的考虑和在本文公开的本发明的实践中，本发明的其它实施方式将对本领域中的技术人员来说变得明显。可单独地或以任何组合来使用所描述的实施例的各种方面和/或部件。意图是说明书和例子仅被考虑为示例性的，本发明的真实范围和精神由下面的权利要求指示。

Claims (21)

1.一种基板处理系统，包括：
处理室，其限定处理区；
第一卡盘阵列，其耦合到被安置于第一侧上的第一运送机构，其中所述第一卡盘阵列被配置成能够在所述第一运送机构上线性地来回移动，由此横穿所述处理区；
第二卡盘阵列，其耦合到被安置于与所述第一侧相对的第二侧上的第二运送机构，其中所述第二卡盘阵列被配置成能够在所述第二运送机构上线性地来回移动，由此横穿所述处理区；
并且其中，所述第一运送机构和所述第二运送机构中的每个被配置成在高度方向上能够移动以使所述第一卡盘阵列和所述第二卡盘阵列中的一个能够在所述第一卡盘阵列和所述第二卡盘阵列中的另一个之下通过。
2.如权利要求1所述的系统，还包括被配置用于将基板装载到所述第一卡盘阵列和所述第二卡盘阵列上的装载机构。
3.如权利要求2所述的系统，还包括被配置成将基板卸载到所述第一卡盘阵列和所述第二卡盘阵列上的卸载机构。
4.如权利要求2所述的系统，其中，所述装载机构还包括对齐机构。
5.如权利要求4所述的系统，其中，所述第一卡盘阵列和所述第二卡盘阵列中的每个包括多个静电卡盘。
6.如权利要求5所述的系统，其中，所述第一卡盘阵列和所述第二卡盘阵列中的每个包括多行静电卡盘。
7.如权利要求4所述的系统，其中，所述第一卡盘阵列和所述第二卡盘阵列中的每个被配置成当横穿所述处理区时以第一速度移动并当在所述处理区外边移动时以比所述第一速度快的第二速度移动。
8.如权利要求5所述的系统，其中，所述装载机构包括被配置成从晶片的正侧夹住所述晶片的多个静电卡盘。
9.如权利要求8所述的系统，其中，所述装载机构包括被配置成迫使晶片倚靠静电对齐销的对齐卡爪。
10.如权利要求9所述的系统，还包括对齐照相机。
11.如权利要求1所述的基板处理系统，还包括：
真空外壳，其中所述处理室附接到所述真空外壳并在所述真空外壳内限定所述处理区；
其中，所述第一运送机构包括：
第一轨道组件，其被安置于所述真空外壳内部在所述处理室的一侧上；
第一升高机构，其耦合到所述第一轨道组件并被配置成将所述第一轨道组件提升到升高后的位置以及将所述第一轨道组件降低到较低的位置；
其中，所述第二运送机构包括：
第二轨道组件，其被安置于所述真空外壳内部在所述第一轨道组件的相对侧上；
第二升高机构，其耦合到所述第二轨道组件并被配置成将所述第二轨道组件提升到升高后的位置以及将所述第二轨道组件降低到较低的位置；
其中，所述第一卡盘阵列被安置在所述第一轨道组件上并被配置成在所述第一轨道组件上骑行；并且，
其中，所述第二卡盘阵列被安置在所述第二轨道组件上并被配置成在所述第二轨道组件上骑行。
12.如权利要求11所述的系统，还包括被安置于所述真空外壳内部的晶片递送机构和被安置于所述真空外壳内部的晶片移除机构。
13.如权利要求12所述的系统，还包括：被配置成将基板从所述晶片递送机构传送到所述第一卡盘阵列和所述第二卡盘阵列的第一拾取和放置组件；以及被配置成将基板从所述第一卡盘阵列和所述第二卡盘阵列传送到所述晶片移除机构的第二拾取和放置组件。
14.如权利要求13所述的系统，其中，所述晶片递送机构包括第一输送机，而所述晶片移除机构包括第二输送机。
15.如权利要求14所述的系统，其中，所述拾取和放置组件包括拾取头，所述拾取头具有被配置成同时夹住多个晶片的多个拾取卡盘。
16.如权利要求15所述的系统，其中，所述第一卡盘阵列和所述第二卡盘阵列中的每个卡盘阵列均包括多个静电卡盘。
17.如权利要求16所述的系统，其中，所述拾取和放置组件还包括被配置成使所述晶片对齐至所述多个静电卡盘的致动器。
18.如权利要求17所述的系统，其中，所述第一卡盘阵列和所述第二卡盘阵列中的每个卡盘阵列均包括多个对齐销，所述对齐销被配置用于通过迫使所述基板倚靠所述对齐销来使所述基板对齐。
19.如权利要求11所述的系统，其中所述第一卡盘阵列在所述第一轨道组件上悬臂式向外伸展，并且所述第二卡盘阵列在所述第二轨道组件上悬臂式向外伸展。
20.如权利要求1所述的系统，其中所述第一卡盘阵列和所述第二卡盘阵列中的每个包括气流通道，所述气流通道被配置为产生用于使所述基板浮动的气垫。
21.如权利要求1所述的系统，其中所述第一运送机构和所述第二运送机构被配置为操作以使得当所述第一卡盘阵列离开所述处理区时，所述第二卡盘阵列立即进入所述处理区，并且当所述第二卡盘阵列离开所述处理区时，所述第一卡盘阵列立即进入所述处理区。
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697553B2 (en) * 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
MY175007A (en) 2011-11-08 2020-06-02 Intevac Inc Substrate processing system and method
US10679883B2 (en) * 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
US9175389B2 (en) * 2012-12-21 2015-11-03 Intermolecular, Inc. ALD process window combinatorial screening tool
KR102098741B1 (ko) * 2013-05-27 2020-04-09 삼성디스플레이 주식회사 증착용 기판 이동부, 이를 포함하는 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR102069189B1 (ko) * 2013-06-17 2020-01-23 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR102072390B1 (ko) * 2013-06-18 2020-02-04 (주)테크윙 테스트핸들러
US9202801B2 (en) * 2013-11-18 2015-12-01 Applied Materials, Inc. Thin substrate and mold compound handling using an electrostatic-chucking carrier
GB201402126D0 (en) * 2014-02-07 2014-03-26 Spts Technologies Ltd Method of processing a substrate
CN104409399A (zh) * 2014-12-05 2015-03-11 无锡先导自动化设备股份有限公司 一种取电池片装置
SG10201906641WA (en) * 2015-10-01 2019-09-27 Intevac Inc Wafer plate and mask arrangement for substrate fabrication
KR20180103824A (ko) * 2016-01-15 2018-09-19 라스코 게엠베하 플립에 의해서 테스트 중인 장치들을 시험장치로 로드 및 언로드하는 장치 및 방법
KR102417917B1 (ko) * 2016-04-26 2022-07-07 삼성전자주식회사 공정 시스템 및 그 동작 방법
US10559710B2 (en) * 2017-07-19 2020-02-11 Intevac, Inc. System of height and alignment rollers for precise alignment of wafers for ion implantation
CN107346724A (zh) * 2017-07-27 2017-11-14 武汉华星光电技术有限公司 离子注入设备和离子注入方法
SG11202106434VA (en) * 2018-12-18 2021-07-29 Intevac Inc Hybrid system architecture for thin film deposition
US11199562B2 (en) 2019-08-08 2021-12-14 Western Digital Technologies, Inc. Wafer testing system including a wafer-flattening multi-zone vacuum chuck and method for operating the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7066703B2 (en) * 1999-09-29 2006-06-27 Tokyo Electron Limited Chuck transport method and system
CN101006572A (zh) * 2004-11-15 2007-07-25 株式会社尼康 基板搬运装置、基板搬运方法以及曝光装置
TW200847217A (en) * 2007-03-22 2008-12-01 Samsung Sdi Co Ltd Apparatus for depositing protective layer and depositing method using the apparatus
CN101490824A (zh) * 2006-07-25 2009-07-22 硅源公司 连续大面积扫描注入工艺的方法与系统

Family Cites Families (458)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3786359A (en) 1969-03-28 1974-01-15 Alpha Ind Inc Ion accelerator and ion species selector
US3607450A (en) 1969-09-26 1971-09-21 Us Air Force Lead sulfide ion implantation mask
US3790412A (en) 1972-04-07 1974-02-05 Bell Telephone Labor Inc Method of reducing the effects of particle impingement on shadow masks
US3969746A (en) 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US3969163A (en) 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
US3948682A (en) 1974-10-31 1976-04-06 Ninel Mineevna Bordina Semiconductor photoelectric generator
US3976508A (en) 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices
JPS5165774U (zh) 1974-11-20 1976-05-24
US4144094A (en) 1975-01-06 1979-03-13 Motorola, Inc. Radiation responsive current generating cell and method of forming same
US4004949A (en) 1975-01-06 1977-01-25 Motorola, Inc. Method of making silicon solar cells
US4072541A (en) 1975-11-21 1978-02-07 Communications Satellite Corporation Radiation hardened P-I-N and N-I-P solar cells
US4152536A (en) 1975-12-05 1979-05-01 Mobil Tyco Solar Energy Corp. Solar cells
US4095329A (en) 1975-12-05 1978-06-20 Mobil Tyco Soalar Energy Corporation Manufacture of semiconductor ribbon and solar cells
US4021276A (en) 1975-12-29 1977-05-03 Western Electric Company, Inc. Method of making rib-structure shadow mask for ion implantation
US4131488A (en) 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
US4070689A (en) 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
US4001864A (en) 1976-01-30 1977-01-04 Gibbons James F Semiconductor p-n junction solar cell and method of manufacture
US4056404A (en) 1976-03-29 1977-11-01 Mobil Tyco Solar Energy Corporation Flat tubular solar cells and method of producing same
US4090213A (en) 1976-06-15 1978-05-16 California Institute Of Technology Induced junction solar cell and method of fabrication
US4070205A (en) 1976-12-08 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Aluminum arsenide eutectic gallium arsenide solar cell
US4116717A (en) 1976-12-08 1978-09-26 The United States Of America As Represented By The Secretary Of The Air Force Ion implanted eutectic gallium arsenide solar cell
US4086102A (en) 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4179311A (en) 1977-01-17 1979-12-18 Mostek Corporation Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides
US4131486A (en) 1977-01-19 1978-12-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Back wall solar cell
US4141756A (en) 1977-10-14 1979-02-27 Honeywell Inc. Method of making a gap UV photodiode by multiple ion-implantations
US4152824A (en) 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US4301592A (en) 1978-05-26 1981-11-24 Hung Chang Lin Method of fabricating semiconductor junction device employing separate metallization
US4219830A (en) 1978-06-19 1980-08-26 Gibbons James F Semiconductor solar cell
US4253881A (en) 1978-10-23 1981-03-03 Rudolf Hezel Solar cells composed of semiconductive materials
US4227941A (en) 1979-03-21 1980-10-14 Massachusetts Institute Of Technology Shallow-homojunction solar cells
US4273950A (en) 1979-05-29 1981-06-16 Photowatt International, Inc. Solar cell and fabrication thereof using microwaves
DE2941908C2 (de) 1979-10-17 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
US4490573A (en) 1979-12-26 1984-12-25 Sera Solar Corporation Solar cells
DK79780A (da) 1980-02-25 1981-08-26 Elektronikcentralen Solcelle med et halvlederkrystal og med en belyst overflade batteri af solceller og fremgangsmaade til fremstilling af samme
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
USRE31151E (en) 1980-04-07 1983-02-15 Inexpensive solar cell and method therefor
US4295002A (en) 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
US4322571A (en) 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
DE3135933A1 (de) 1980-09-26 1982-05-19 Unisearch Ltd., Kensington, New South Wales Solarzelle und verfahren zu ihrer herstellung
US4421577A (en) 1980-11-10 1983-12-20 The Board Of Trustees Of The Leland Stanford, Junior University Method for making Schottky barrier diodes with engineered heights
US4353160A (en) 1980-11-24 1982-10-12 Spire Corporation Solar cell junction processing system
DE3049376A1 (de) 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
US4379944A (en) 1981-02-05 1983-04-12 Varian Associates, Inc. Grooved solar cell for deployment at set angle
JPS57132373A (en) 1981-02-10 1982-08-16 Agency Of Ind Science & Technol Manufacture of solar battery
DE3176643D1 (en) 1981-10-30 1988-03-10 Ibm Deutschland Shadow projecting mask for ion implantation and lithography by ion beam radiation
JPS58164134A (ja) 1982-03-24 1983-09-29 Hitachi Ltd 半導体装置の製造方法
DE3234678A1 (de) 1982-09-18 1984-04-05 Battelle-Institut E.V., 6000 Frankfurt Solarzelle
US4479027A (en) 1982-09-24 1984-10-23 Todorof William J Multi-layer thin-film, flexible silicon alloy photovoltaic cell
US4456489A (en) 1982-10-15 1984-06-26 Motorola, Inc. Method of forming a shallow and high conductivity boron doped layer in silicon
US4587430A (en) 1983-02-10 1986-05-06 Mission Research Corporation Ion implantation source and device
DE3308269A1 (de) 1983-03-09 1984-09-13 Licentia Patent-Verwaltungs-Gmbh Solarzelle
US4539431A (en) 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
US4847504A (en) 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
US4522657A (en) 1983-10-20 1985-06-11 Westinghouse Electric Corp. Low temperature process for annealing shallow implanted N+/P junctions
US4589191A (en) 1983-10-20 1986-05-20 Unisearch Limited Manufacture of high efficiency solar cells
US4524237A (en) 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
US4542256A (en) 1984-04-27 1985-09-17 University Of Delaware Graded affinity photovoltaic cell
US4523971A (en) 1984-06-28 1985-06-18 International Business Machines Corporation Programmable ion beam patterning system
JPH0630237B2 (ja) 1984-09-10 1994-04-20 株式会社日立製作所 イオン打込み装置
GB8423558D0 (en) 1984-09-18 1984-10-24 Secr Defence Semi-conductor solar cells
US4667060A (en) 1985-05-28 1987-05-19 Spire Corporation Back junction photovoltaic solar cell
JPS61294866A (ja) 1985-06-21 1986-12-25 Nippon Texas Instr Kk 電荷結合型半導体装置
JPS6215864A (ja) 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
DE3536299A1 (de) 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
US4676845A (en) 1986-02-18 1987-06-30 Spire Corporation Passivated deep p/n junction
US4665277A (en) 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
JPS62237766A (ja) 1986-04-07 1987-10-17 M Setetsuku Kk 太陽電池
US4719355A (en) 1986-04-10 1988-01-12 Texas Instruments Incorporated Ion source for an ion implanter
US4737688A (en) 1986-07-22 1988-04-12 Applied Electron Corporation Wide area source of multiply ionized atomic or molecular species
JPS63143876A (ja) 1986-12-08 1988-06-16 Hitachi Ltd 太陽電池の製造方法
DE3712503A1 (de) 1987-04-13 1988-11-03 Nukem Gmbh Solarzelle
US4830678A (en) 1987-06-01 1989-05-16 Todorof William J Liquid-cooled sealed enclosure for concentrator solar cell and secondary lens
AT393925B (de) 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US4834805A (en) 1987-09-24 1989-05-30 Wattsun, Inc. Photovoltaic power modules and methods for making same
JPH01290267A (ja) 1988-05-18 1989-11-22 Fuji Electric Co Ltd 光電変換素子の製造方法
JPH01309960A (ja) * 1988-06-08 1989-12-14 Ulvac Corp 光磁気ディスク用インライン式スパッタリング装置
JPH0735394Y2 (ja) * 1988-08-05 1995-08-09 日新電機株式会社 ウエハ位置決め装置
US4933022A (en) 1988-11-14 1990-06-12 Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute Solar cell having interdigitated contacts and internal bypass diodes
US4933021A (en) 1988-11-14 1990-06-12 Electric Power Research Institute Monolithic series-connected solar cells employing shorted p-n junctions for electrical isolation
US4927770A (en) 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
EP0369666B1 (en) 1988-11-16 1995-06-14 Mitsubishi Denki Kabushiki Kaisha Solar cell
JP2808004B2 (ja) 1989-01-30 1998-10-08 京セラ株式会社 太陽電池
JP3466607B2 (ja) * 1989-09-13 2003-11-17 ソニー株式会社 スパッタリング装置
US5136171A (en) 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
JP2644912B2 (ja) 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
US5132544A (en) 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
JP2875892B2 (ja) 1990-12-20 1999-03-31 三菱重工業株式会社 立方晶窒化ほう素膜の形成方法
US5112409A (en) 1991-01-23 1992-05-12 Solarex Corporation Solar cells with reduced recombination under grid lines, and method of manufacturing same
DE4111384C2 (de) * 1991-04-09 1999-11-04 Leybold Ag Vorrichtung zur Beschichtung von Substraten
US5125983A (en) 1991-04-22 1992-06-30 Electric Power Research Institute, Inc. Generating electric power from solar radiation
US5391886A (en) 1991-08-09 1995-02-21 Fujitsu Limited Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system
USH1637H (en) 1991-09-18 1997-03-04 Offord; Bruce W. Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS)
JPH0797653B2 (ja) 1991-10-01 1995-10-18 工業技術院長 光電変換素子
JP2837296B2 (ja) 1991-10-17 1998-12-14 シャープ株式会社 太陽電池
DE4217428A1 (de) 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US5180150A (en) * 1992-01-24 1993-01-19 Hughes Danbury Optical Systems, Inc. Apparatus for providing consistent registration of semiconductor wafers
DE4202455C1 (zh) 1992-01-29 1993-08-19 Siemens Ag, 8000 Muenchen, De
TW232079B (zh) 1992-03-17 1994-10-11 Wisconsin Alumni Res Found
JPH0647324A (ja) 1992-07-31 1994-02-22 Dainippon Screen Mfg Co Ltd ロールコータ
US5374456A (en) 1992-12-23 1994-12-20 Hughes Aircraft Company Surface potential control in plasma processing of materials
US6084175A (en) 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US5421889A (en) 1993-06-29 1995-06-06 Tokyo Electron Limited Method and apparatus for inverting samples in a process
JP3159583B2 (ja) 1993-11-10 2001-04-23 シャープ株式会社 太陽電池およびその製造方法
KR100366910B1 (ko) 1994-04-05 2003-03-04 소니 가부시끼 가이샤 반도체장치의제조방법
FR2722612B1 (fr) 1994-07-13 1997-01-03 Centre Nat Rech Scient Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
US5583368A (en) 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
JP4365895B2 (ja) 1995-04-26 2009-11-18 株式会社日立製作所 イオンビーム装置
US5693376A (en) 1995-06-23 1997-12-02 Wisconsin Alumni Research Foundation Method for plasma source ion implantation and deposition for cylindrical surfaces
US5554854A (en) 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5863831A (en) 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
GB2343545B (en) 1995-11-08 2000-06-21 Applied Materials Inc An ion implanter with three electrode deceleration structure and upstream mass selection
GB2344213B (en) 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved field control
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
JPH09191040A (ja) * 1996-01-12 1997-07-22 Canon Inc 基板の搬送装置及び搬送方法
US5760405A (en) 1996-02-16 1998-06-02 Eaton Corporation Plasma chamber for controlling ion dosage in ion implantation
US6827824B1 (en) 1996-04-12 2004-12-07 Micron Technology, Inc. Enhanced collimated deposition
US7118996B1 (en) 1996-05-15 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for doping
JP3369847B2 (ja) 1996-05-29 2003-01-20 三洋電機株式会社 光起電力素子
GB2314202B (en) 1996-06-14 2000-08-09 Applied Materials Inc Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
GB2316224B (en) 1996-06-14 2000-10-04 Applied Materials Inc Ion implantation method
JP4197193B2 (ja) 1996-07-08 2008-12-17 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US5885896A (en) 1996-07-08 1999-03-23 Micron Technology, Inc. Using implants to lower anneal temperatures
EP0837333A3 (en) * 1996-10-18 1999-06-09 Tokyo Electron Limited Apparatus for aligning a semiconductor wafer with an inspection contactor
JP3239779B2 (ja) * 1996-10-29 2001-12-17 日新電機株式会社 基板処理装置および基板処理方法
US6091021A (en) 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process
JP4067602B2 (ja) * 1996-12-09 2008-03-26 富士通株式会社 高さ検査方法、それを実施する高さ検査装置
US5963801A (en) 1996-12-19 1999-10-05 Lsi Logic Corporation Method of forming retrograde well structures and punch-through barriers using low energy implants
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6239441B1 (en) 1997-01-20 2001-05-29 Kabushiki Kaisha Toshiba Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
US5945012A (en) 1997-02-18 1999-08-31 Silicon Genesis Corporation Tumbling barrel plasma processor
JPH10326837A (ja) 1997-03-25 1998-12-08 Toshiba Corp 半導体集積回路装置の製造方法、半導体集積回路装置、半導体装置、及び、半導体装置の製造方法
JP3468670B2 (ja) 1997-04-28 2003-11-17 シャープ株式会社 太陽電池セルおよびその製造方法
KR100223847B1 (ko) 1997-05-06 1999-10-15 구본준 반도체 소자의 구조 및 제조 방법
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US5907158A (en) 1997-05-14 1999-05-25 Ebara Corporation Broad range ion implanter
GB2325561B (en) 1997-05-20 2001-10-17 Applied Materials Inc Apparatus for and methods of implanting desired chemical species in semiconductor substrates
US6103599A (en) 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6207005B1 (en) 1997-07-29 2001-03-27 Silicon Genesis Corporation Cluster tool apparatus using plasma immersion ion implantation
WO1999010927A1 (en) 1997-08-29 1999-03-04 Farrens Sharon N In situ plasma wafer bonding method
US6155773A (en) * 1997-09-22 2000-12-05 Applied Materials, Inc. Substrate clamping apparatus
US5998282A (en) 1997-10-21 1999-12-07 Lukaszek; Wieslaw A. Method of reducing charging damage to integrated circuits in ion implant and plasma-based integrated circuit process equipment
US6006253A (en) 1997-10-31 1999-12-21 Intel Corporation Method and apparatus to provide a backchannel for receiver terminals in a loosely-coupled conference
US6016036A (en) 1998-01-28 2000-01-18 Eaton Corporation Magnetic filter for ion source
JP3027968B2 (ja) 1998-01-29 2000-04-04 日新電機株式会社 成膜装置
US6265328B1 (en) 1998-01-30 2001-07-24 Silicon Genesis Corporation Wafer edge engineering method and device
US6217724B1 (en) 1998-02-11 2001-04-17 Silicon General Corporation Coated platen design for plasma immersion ion implantation
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6186091B1 (en) 1998-02-11 2001-02-13 Silicon Genesis Corporation Shielded platen design for plasma immersion ion implantation
US6269765B1 (en) 1998-02-11 2001-08-07 Silicon Genesis Corporation Collection devices for plasma immersion ion implantation
US6120660A (en) 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
US6051073A (en) 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6083324A (en) 1998-02-19 2000-07-04 Silicon Genesis Corporation Gettering technique for silicon-on-insulator wafers
US6060718A (en) 1998-02-26 2000-05-09 Eaton Corporation Ion source having wide output current operating range
US6113735A (en) 1998-03-02 2000-09-05 Silicon Genesis Corporation Distributed system and code for control and automation of plasma immersion ion implanter
US6034321A (en) 1998-03-24 2000-03-07 Essential Research, Inc. Dot-junction photovoltaic cells using high-absorption semiconductors
US6221774B1 (en) 1998-04-10 2001-04-24 Silicon Genesis Corporation Method for surface treatment of substrates
US6335534B1 (en) 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
DE19820152A1 (de) 1998-05-06 1999-11-11 Rossendorf Forschzent Stickstoffhaltige Randschicht auf Bauteilen aus nichtrostendem Stahl und Verfahren zur Herstellung der Randschicht
US6146462A (en) 1998-05-08 2000-11-14 Astenjohnson, Inc. Structures and components thereof having a desired surface characteristic together with methods and apparatuses for producing the same
US6321016B1 (en) 1998-06-19 2001-11-20 Pirelli Cavi E Sistemi S.P.A. Optical fiber having low non-linearity for WDM transmission
US6248649B1 (en) 1998-06-23 2001-06-19 Silicon Genesis Corporation Controlled cleavage process and device for patterned films using patterned implants
US6291314B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Controlled cleavage process and device for patterned films using a release layer
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
AUPP437598A0 (en) 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP2002520818A (ja) 1998-07-02 2002-07-09 アストロパワー シリコン薄膜，集積化された太陽電池，モジュール，及びその製造方法
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
TW428216B (en) 1998-07-29 2001-04-01 Tokyo Electron Ltd Substrate process method and substrate process apparatus
KR100339186B1 (ko) 1998-09-28 2002-05-31 포만 제프리 엘 기판상에서 패턴을 규정하는 장치 및 방법
JP2000123778A (ja) 1998-10-14 2000-04-28 Hitachi Ltd イオン注入装置およびイオン注入方法
US6150708A (en) 1998-11-13 2000-11-21 Advanced Micro Devices, Inc. Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density
US20010002584A1 (en) 1998-12-01 2001-06-07 Wei Liu Enhanced plasma mode and system for plasma immersion ion implantation
US6213050B1 (en) 1998-12-01 2001-04-10 Silicon Genesis Corporation Enhanced plasma mode and computer system for plasma immersion ion implantation
US6300227B1 (en) 1998-12-01 2001-10-09 Silicon Genesis Corporation Enhanced plasma mode and system for plasma immersion ion implantation
US20010017109A1 (en) 1998-12-01 2001-08-30 Wei Liu Enhanced plasma mode and system for plasma immersion ion implantation
US6534381B2 (en) 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
US6171965B1 (en) 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
US6287941B1 (en) 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
US6204151B1 (en) 1999-04-21 2001-03-20 Silicon Genesis Corporation Smoothing method for cleaved films made using thermal treatment
US6206973B1 (en) 1999-04-23 2001-03-27 Silicon Valley Group Thermal System Llc Chemical vapor deposition system and method
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
WO2001006030A1 (en) 1999-07-19 2001-01-25 Young Park High throughput thin film deposition for optical disk processing
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
TW419834B (en) 1999-09-01 2001-01-21 Opto Tech Corp Photovoltaic generator
US6489241B1 (en) 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
JP2001189483A (ja) 1999-10-18 2001-07-10 Sharp Corp バイパス機能付太陽電池セルおよびバイパス機能付き多接合積層型太陽電池セルおよびそれらの製造方法
DE60041149D1 (de) 1999-12-06 2009-01-29 Tel Epion Inc Gerät zum glätten von substraten mittels gas-cluster-ionenstrahlung
DE10060002B4 (de) 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
EP2426693A3 (en) 1999-12-13 2013-01-16 Semequip, Inc. Ion source
US6458430B1 (en) 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
US6646223B2 (en) 1999-12-28 2003-11-11 Texas Instruments Incorporated Method for improving ash rate uniformity in photoresist ashing process equipment
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US6376370B1 (en) 2000-01-18 2002-04-23 Micron Technology, Inc. Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
JP2001203169A (ja) 2000-01-19 2001-07-27 Mitsubishi Electric Corp 半導体装置およびその製造方法と注入用露光マスク
JP4450126B2 (ja) 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
JP2003523053A (ja) 2000-02-11 2003-07-29 ダウ・コーニング・アイルランド・リミテッド 大気圧プラズマシステム
JP2001252555A (ja) 2000-03-09 2001-09-18 Hitachi Ltd 薄膜生成システム
US6417515B1 (en) 2000-03-17 2002-07-09 International Business Machines Corporation In-situ ion implant activation and measurement apparatus
US20010046566A1 (en) 2000-03-23 2001-11-29 Chu Paul K. Apparatus and method for direct current plasma immersion ion implantation
JP2001294153A (ja) * 2000-04-17 2001-10-23 Nakanishi Metal Works Co Ltd トロリコンベヤ
JP3888860B2 (ja) 2000-05-24 2007-03-07 シャープ株式会社 太陽電池セルの保護方法
FR2809867B1 (fr) 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
JP2002057352A (ja) 2000-06-02 2002-02-22 Honda Motor Co Ltd 太陽電池およびその製造方法
US6495010B2 (en) 2000-07-10 2002-12-17 Unaxis Usa, Inc. Differentially-pumped material processing system
US7228211B1 (en) 2000-07-25 2007-06-05 Hti Ip, Llc Telematics device for vehicles with an interface for multiple peripheral devices
US6636790B1 (en) 2000-07-25 2003-10-21 Reynolds And Reynolds Holdings, Inc. Wireless diagnostic system and method for monitoring vehicles
US6604033B1 (en) 2000-07-25 2003-08-05 Networkcar.Com Wireless diagnostic system for characterizing a vehicle's exhaust emissions
JP4414072B2 (ja) * 2000-07-27 2010-02-10 キヤノンアネルバ株式会社 真空処理装置用トレー及び真空処理装置
JP2002083981A (ja) 2000-09-07 2002-03-22 Shin Etsu Handotai Co Ltd 太陽電池セルおよびその製造方法
US20020090758A1 (en) 2000-09-19 2002-07-11 Silicon Genesis Corporation Method and resulting device for manufacturing for double gated transistors
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6294434B1 (en) 2000-09-27 2001-09-25 Vanguard International Semiconductor Corporation Method of forming a metal silicide layer on a polysilicon gate structure and on a source/drain region of a MOSFET device
US6996550B2 (en) 2000-12-15 2006-02-07 Symyx Technologies, Inc. Methods and apparatus for preparing high-dimensional combinatorial experiments
JP2002289514A (ja) 2000-12-22 2002-10-04 Nikon Corp 露光装置及び露光方法
KR100366349B1 (ko) 2001-01-03 2002-12-31 삼성에스디아이 주식회사 태양 전지 및 그의 제조 방법
US6448152B1 (en) 2001-02-20 2002-09-10 Silicon Genesis Corporation Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer
US7523159B1 (en) 2001-03-14 2009-04-21 Hti, Ip, Llc Systems, methods and devices for a telematics web services interface feature
US6611740B2 (en) 2001-03-14 2003-08-26 Networkcar Internet-based vehicle-diagnostic system
CN1291502C (zh) 2001-03-19 2006-12-20 信越半导体株式会社 太阳能电池及其制造方法
US6547939B2 (en) 2001-03-29 2003-04-15 Super Light Wave Corp. Adjustable shadow mask for improving uniformity of film deposition using multiple monitoring points along radius of substrate
US20020144725A1 (en) 2001-04-10 2002-10-10 Motorola, Inc. Semiconductor structure suitable for forming a solar cell, device including the structure, and methods of forming the device and structure
JP3888608B2 (ja) 2001-04-25 2007-03-07 東京エレクトロン株式会社 基板両面処理装置
US6780759B2 (en) 2001-05-09 2004-08-24 Silicon Genesis Corporation Method for multi-frequency bonding
DE60112726T2 (de) 2001-05-15 2006-06-14 St Microelectronics Srl Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren
US20020170591A1 (en) 2001-05-15 2002-11-21 Pharmaseq, Inc. Method and apparatus for powering circuitry with on-chip solar cells within a common substrate
US20030015700A1 (en) 2001-07-20 2003-01-23 Motorola, Inc. Suitable semiconductor structure for forming multijunction solar cell and method for forming the same
US6594579B1 (en) 2001-08-06 2003-07-15 Networkcar Internet-based method for determining a vehicle's fuel efficiency
CN1996552B (zh) * 2001-08-31 2012-09-05 克罗辛自动化公司 晶片机
DE10142481A1 (de) 2001-08-31 2003-03-27 Rudolf Hezel Solarzelle sowie Verfahren zur Herstellung einer solchen
US7109517B2 (en) 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
US6787693B2 (en) 2001-12-06 2004-09-07 International Rectifier Corporation Fast turn on/off photovoltaic generator for photovoltaic relay
US7174243B1 (en) 2001-12-06 2007-02-06 Hti Ip, Llc Wireless, internet-based system for transmitting and analyzing GPS data
US6613974B2 (en) 2001-12-21 2003-09-02 Micrel, Incorporated Tandem Si-Ge solar cell with improved conversion efficiency
US6518184B1 (en) 2002-01-18 2003-02-11 Intel Corporation Enhancement of an interconnect
US20050163598A1 (en) * 2002-02-27 2005-07-28 Tokyou Electron Limited Method for carrying substrate
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
CN100383664C (zh) 2002-03-20 2008-04-23 张国飙 低成本光刻技术
JP2003279493A (ja) * 2002-03-22 2003-10-02 V Technology Co Ltd 被検査体の搬送検査装置
US6660928B1 (en) 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US6759807B2 (en) 2002-04-04 2004-07-06 Veeco Instruments, Inc. Multi-grid ion beam source for generating a highly collimated ion beam
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
KR100410574B1 (ko) 2002-05-18 2003-12-18 주식회사 하이닉스반도체 데카보렌 도핑에 의한 초박형 에피채널을 갖는반도체소자의 제조 방법
JP2004031648A (ja) 2002-06-26 2004-01-29 Toppan Printing Co Ltd 光閉じ込め層を持つ光電変換素子と光電変換装置およびこの装置を備えた太陽電池
JP2004039751A (ja) 2002-07-01 2004-02-05 Toyota Motor Corp 光起電力素子
US20040025791A1 (en) 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20040025932A1 (en) 2002-08-12 2004-02-12 John Husher Variegated, high efficiency solar cell and method for making same
US20040123804A1 (en) * 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
US20040086639A1 (en) 2002-09-24 2004-05-06 Grantham Daniel Harrison Patterned thin-film deposition using collimating heated mask asembly
GB2409340B (en) 2002-10-04 2006-05-10 Silicon Genesis Corp Method for treating semiconductor material
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US6801028B2 (en) 2002-11-14 2004-10-05 Fyre Storm, Inc. Phase locked looped based digital pulse converter
JP2004193350A (ja) 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
JP2004207571A (ja) 2002-12-26 2004-07-22 Toshiba Corp 半導体装置の製造方法、半導体製造装置及びステンシルマスク
JP2004273826A (ja) 2003-03-10 2004-09-30 Sharp Corp 光電変換装置及びその製造方法
JP4373115B2 (ja) 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7199039B2 (en) 2003-05-19 2007-04-03 Intel Corporation Interconnect routing over semiconductor for editing through the back side of an integrated circuit
JP2005005376A (ja) 2003-06-10 2005-01-06 Toyota Motor Corp 光起電力素子
WO2005004198A2 (en) 2003-06-13 2005-01-13 North Carolina State University Complex oxides for use in semiconductor devices and related methods
JP2005026554A (ja) * 2003-07-04 2005-01-27 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
US20060166394A1 (en) 2003-07-07 2006-07-27 Kukulka Jerry R Solar cell structure with solar cells having reverse-bias protection using an implanted current shunt
US6949895B2 (en) 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US6825102B1 (en) 2003-09-18 2004-11-30 International Business Machines Corporation Method of improving the quality of defective semiconductor material
JP4232597B2 (ja) 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
JP4660642B2 (ja) 2003-10-17 2011-03-30 信越化学工業株式会社 太陽電池及びその製造方法
JP4112472B2 (ja) 2003-10-21 2008-07-02 株式会社東芝 半導体装置の製造方法及び半導体装置の製造装置
JP2007509654A (ja) 2003-10-31 2007-04-19 ベントラコー リミテッド ポリマー素子を含んでなる改善された血液ポンプ
US7354815B2 (en) 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
US7081186B2 (en) 2003-11-20 2006-07-25 Sheffield Hallam University Combined coating process comprising magnetic field-assisted, high power, pulsed cathode sputtering and an unbalanced magnetron
US7019315B2 (en) * 2003-12-08 2006-03-28 Varian Semiconductor Equipment Associates, Inc. System and method for serial ion implanting productivity enhancements
GB2409928B (en) 2004-01-09 2007-03-21 Applied Materials Inc Improvements relating to ion implantation
US20050150597A1 (en) 2004-01-09 2005-07-14 Silicon Genesis Corporation Apparatus and method for controlled cleaving
WO2005076329A1 (en) 2004-02-03 2005-08-18 Sharp Kabushiki Kaisha Ion doping apparatus, ion doping method, semiconductor device, and method of fabricating semiconductor device
US20050205211A1 (en) 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7390724B2 (en) 2004-04-12 2008-06-24 Silicon Genesis Corporation Method and system for lattice space engineering
US7225065B1 (en) 2004-04-26 2007-05-29 Hti Ip, Llc In-vehicle wiring harness with multiple adaptors for an on-board diagnostic connector
US20050247668A1 (en) 2004-05-06 2005-11-10 Silicon Genesis Corporation Method for smoothing a film of material using a ring structure
JP2005322780A (ja) 2004-05-10 2005-11-17 Toyota Motor Corp 太陽電池
GB0410743D0 (en) * 2004-05-14 2004-06-16 Vivactiss Bvba Holder for wafers
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8963169B2 (en) 2004-07-28 2015-02-24 Quantum Semiconductor Llc CMOS pixels comprising epitaxial layers for light-sensing and light emission
US7094666B2 (en) 2004-07-29 2006-08-22 Silicon Genesis Corporation Method and system for fabricating strained layers for the manufacture of integrated circuits
US7078317B2 (en) 2004-08-06 2006-07-18 Silicon Genesis Corporation Method and system for source switching and in-situ plasma bonding
WO2006019039A1 (ja) 2004-08-18 2006-02-23 Sharp Kabushiki Kaisha 画像データ表示装置
GB2417251A (en) 2004-08-18 2006-02-22 Nanofilm Technologies Int Removing material from a substrate surface using plasma
SG120197A1 (en) * 2004-08-23 2006-03-28 Rokko Systems Pte Ltd Supply mechanism for the chuck of an integrated circuit dicing device
DE102004044083A1 (de) 2004-09-09 2006-03-30 Forschungszentrum Jülich GmbH Verfahren zur Strukturierung eines Substrats und Vorrichtung hierzu
JP2006108304A (ja) 2004-10-04 2006-04-20 Nec Electronics Corp 基板処理装置
US7250323B2 (en) 2004-10-25 2007-07-31 Rochester Institute Of Technology Methods of making energy conversion devices with a substantially contiguous depletion regions
US7611322B2 (en) * 2004-11-18 2009-11-03 Intevac, Inc. Processing thin wafers
US7399680B2 (en) 2004-11-24 2008-07-15 Silicon Genesis Corporation Method and structure for implanting bonded substrates for electrical conductivity
US7547609B2 (en) 2004-11-24 2009-06-16 Silicon Genesis Corporation Method and structure for implanting bonded substrates for electrical conductivity
JP2006170733A (ja) * 2004-12-15 2006-06-29 Sharp Corp 基板位置決め保持方法及び装置
US7268431B2 (en) 2004-12-30 2007-09-11 Advantech Global, Ltd System for and method of forming via holes by use of selective plasma etching in a continuous inline shadow mask deposition process
US7828929B2 (en) 2004-12-30 2010-11-09 Research Electro-Optics, Inc. Methods and devices for monitoring and controlling thin film processing
JP4969781B2 (ja) 2005-01-14 2012-07-04 株式会社アルバック プラズマドーピング装置
US7022984B1 (en) 2005-01-31 2006-04-04 Axcelis Technologies, Inc. Biased electrostatic deflector
US7918940B2 (en) * 2005-02-07 2011-04-05 Semes Co., Ltd. Apparatus for processing substrate
EP1894234B1 (en) 2005-02-28 2021-11-03 Silicon Genesis Corporation Substrate stiffening method and system for a layer transfer.
US7410907B2 (en) 2005-03-31 2008-08-12 Lucent Technologies Inc. Fabricating integrated devices using embedded masks
US20060234484A1 (en) 2005-04-14 2006-10-19 International Business Machines Corporation Method and structure for ion implantation by ion scattering
JP4481869B2 (ja) 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
KR100675891B1 (ko) 2005-05-04 2007-02-02 주식회사 하이닉스반도체 불균일 이온주입장치 및 불균일 이온주입방법
US7520292B2 (en) 2005-05-17 2009-04-21 Brian Weltman Pressure activated trap primer and water hammer combination
JP2007022314A (ja) 2005-07-15 2007-02-01 Kanzaki Kokyukoki Mfg Co Ltd 油圧式車軸駆動装置
US7674687B2 (en) 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US20070031609A1 (en) 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
US7166520B1 (en) 2005-08-08 2007-01-23 Silicon Genesis Corporation Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
US20070032044A1 (en) 2005-08-08 2007-02-08 Silicon Genesis Corporation Method and structure for fabricating devices using one or more films provided by a layer transfer process and etch back
US20070029043A1 (en) 2005-08-08 2007-02-08 Silicon Genesis Corporation Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer process
US7317579B2 (en) 2005-08-11 2008-01-08 Micron Technology, Inc. Method and apparatus providing graded-index microlenses
US7427554B2 (en) 2005-08-12 2008-09-23 Silicon Genesis Corporation Manufacturing strained silicon substrates using a backing material
KR100653073B1 (ko) 2005-09-28 2006-12-01 삼성전자주식회사 기판처리장치와 기판처리방법
US20070081138A1 (en) 2005-10-11 2007-04-12 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing methods and mask for use in a device manufacturing method
US7524743B2 (en) 2005-10-13 2009-04-28 Varian Semiconductor Equipment Associates, Inc. Conformal doping apparatus and method
US7479441B2 (en) 2005-10-14 2009-01-20 Silicon Genesis Corporation Method and apparatus for flag-less water bonding tool
JP4345895B2 (ja) 2005-10-20 2009-10-14 日新イオン機器株式会社 イオン源の運転方法およびイオン注入装置
KR100766254B1 (ko) 2005-10-20 2007-10-15 동부일렉트로닉스 주식회사 태양전지용 접합층 형성방법
WO2007050058A1 (en) 2005-10-25 2007-05-03 Georgia Tech Research Corporation Spatial separation of optical frefquency components using photonic crystals
WO2007106180A2 (en) 2005-11-07 2007-09-20 Applied Materials, Inc. Photovoltaic contact and wiring formation
US20070169806A1 (en) 2006-01-20 2007-07-26 Palo Alto Research Center Incorporated Solar cell production using non-contact patterning and direct-write metallization
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
JP2007157662A (ja) 2005-12-08 2007-06-21 Seiko Epson Corp 有機発光装置の製造方法、有機発光装置および電子機器
KR101181820B1 (ko) 2005-12-29 2012-09-11 삼성에스디아이 주식회사 태양 전지의 제조 방법
JP4729403B2 (ja) 2006-01-06 2011-07-20 株式会社アドバンテスト 電子ビーム露光装置
JP2007207973A (ja) * 2006-02-01 2007-08-16 Tokyo Ohka Kogyo Co Ltd 表面処理方法及び表面処理装置
KR100706809B1 (ko) 2006-02-07 2007-04-12 삼성전자주식회사 이온 빔 조절 장치 및 그 방법
US20110011734A1 (en) 2006-03-01 2011-01-20 Shinmaywa Industries, Ltd. Plasma Gun and Plasma Gun Deposition System Including the Same
US7863157B2 (en) 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US7598153B2 (en) 2006-03-31 2009-10-06 Silicon Genesis Corporation Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
EP2002484A4 (en) 2006-04-05 2016-06-08 Silicon Genesis Corp METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS
CN101055898A (zh) 2006-04-11 2007-10-17 新日光能源科技股份有限公司 光电转换装置、光电转换元件及其基板与制造方法
JP2007284203A (ja) * 2006-04-18 2007-11-01 Asyst Shinko Inc 搬送設備
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
US20070277875A1 (en) 2006-05-31 2007-12-06 Kishor Purushottam Gadkaree Thin film photovoltaic structure
JP2009539255A (ja) 2006-05-31 2009-11-12 コーニング インコーポレイテッド 薄膜光起電構造および製造
US7579654B2 (en) 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
US7608521B2 (en) 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
US20080000497A1 (en) 2006-06-30 2008-01-03 Applied Materials, Inc. Removal of organic-containing layers from large surface areas
CN101490792B (zh) 2006-07-20 2012-02-01 阿维扎技术有限公司 离子沉积设备
US7767520B2 (en) 2006-08-15 2010-08-03 Kovio, Inc. Printed dopant layers
US7701011B2 (en) 2006-08-15 2010-04-20 Kovio, Inc. Printed dopant layers
JP4779870B2 (ja) 2006-08-18 2011-09-28 株式会社日立製作所 イオン注入方法およびその装置
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
KR20080023774A (ko) 2006-09-12 2008-03-17 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토 다이오드
US20080090392A1 (en) 2006-09-29 2008-04-17 Varian Semiconductor Equipment Associates, Inc. Technique for Improved Damage Control in a Plasma Doping (PLAD) Ion Implantation
US20080092944A1 (en) 2006-10-16 2008-04-24 Leonid Rubin Semiconductor structure and process for forming ohmic connections to a semiconductor structure
US20080092947A1 (en) 2006-10-24 2008-04-24 Applied Materials, Inc. Pulse plating of a low stress film on a solar cell substrate
CN101522939A (zh) * 2006-10-27 2009-09-02 株式会社爱发科 等离子显示器面板的制造方法以及制造装置
JP2008112848A (ja) 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
US8124499B2 (en) 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080128641A1 (en) 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US7772575B2 (en) 2006-11-21 2010-08-10 D2S, Inc. Stencil design and method for cell projection particle beam lithography
US20080121276A1 (en) 2006-11-29 2008-05-29 Applied Materials, Inc. Selective electroless deposition for solar cells
US20080128019A1 (en) 2006-12-01 2008-06-05 Applied Materials, Inc. Method of metallizing a solar cell substrate
KR100759084B1 (ko) 2006-12-07 2007-09-19 실리콘 디스플레이 (주) 이온 도핑 장치
JP5252613B2 (ja) 2006-12-25 2013-07-31 国立大学法人東北大学 イオン注入装置およびイオン注入方法
KR100836765B1 (ko) 2007-01-08 2008-06-10 삼성전자주식회사 이온빔을 사용하는 반도체 장비
US20080188011A1 (en) 2007-01-26 2008-08-07 Silicon Genesis Corporation Apparatus and method of temperature conrol during cleaving processes of thick film materials
US7910458B2 (en) 2007-01-29 2011-03-22 Silicon Genesis Corporation Method and structure using selected implant angles using a linear accelerator process for manufacture of free standing films of materials
KR100868019B1 (ko) 2007-01-30 2008-11-10 삼성전자주식회사 플라즈마 쉬쓰 제어기를 갖는 이온 빔 장치
US7988875B2 (en) 2007-02-08 2011-08-02 Applied Materials, Inc. Differential etch rate control of layers deposited by chemical vapor deposition
JP5133728B2 (ja) 2007-03-09 2013-01-30 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US7867409B2 (en) 2007-03-29 2011-01-11 Tokyo Electron Limited Control of ion angular distribution function at wafer surface
TWI404165B (zh) 2007-04-02 2013-08-01 Sosul Co Ltd 基材支撐裝置及包含該裝置之電漿蝕刻裝置
US20080275546A1 (en) 2007-05-03 2008-11-06 Chameleon Scientific Corp Inhibitory cell adhesion surfaces
JP2008297584A (ja) * 2007-05-30 2008-12-11 Canon Anelva Corp 成膜装置
US20080296261A1 (en) 2007-06-01 2008-12-04 Nordson Corporation Apparatus and methods for improving treatment uniformity in a plasma process
JP5022116B2 (ja) 2007-06-18 2012-09-12 三菱重工業株式会社 半導体装置の製造方法及び製造装置
TWI450401B (zh) 2007-08-28 2014-08-21 Mosel Vitelic Inc 太陽能電池及其製造方法
US7776727B2 (en) 2007-08-31 2010-08-17 Applied Materials, Inc. Methods of emitter formation in solar cells
US7820460B2 (en) 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
US7598161B2 (en) 2007-09-26 2009-10-06 Advanced Micro Devices, Inc. Method of forming transistor devices with different threshold voltages using halo implant shadowing
US20090206275A1 (en) 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
US20090124064A1 (en) 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
JP4919082B2 (ja) 2007-11-21 2012-04-18 Ｔｄｋ株式会社 イオンビーム処理装置及びイオンビーム処理方法
US20090142875A1 (en) 2007-11-30 2009-06-04 Applied Materials, Inc. Method of making an improved selective emitter for silicon solar cells
KR101385750B1 (ko) 2007-11-30 2014-04-18 삼성전자주식회사 중성빔을 이용하는 기판 처리 장치 및 방법
KR101290884B1 (ko) 2007-12-06 2013-07-29 가부시키가이샤 알박 진공 처리 장치 및 기판 처리 방법
US20090152162A1 (en) 2007-12-13 2009-06-18 Silicon Genesis Corporation Carrier apparatus and method for shaped sheet materials
US20090162970A1 (en) 2007-12-20 2009-06-25 Yang Michael X Material modification in solar cell fabrication with ion doping
US8003954B2 (en) 2008-01-03 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Gas delivery system for an ion source
US8563352B2 (en) 2008-02-05 2013-10-22 Gtat Corporation Creation and translation of low-relief texture for a photovoltaic cell
US8461032B2 (en) 2008-03-05 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Use of dopants with different diffusivities for solar cell manufacture
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
US20090227095A1 (en) 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
US20090227061A1 (en) 2008-03-05 2009-09-10 Nicholas Bateman Establishing a high phosphorus concentration in solar cells
WO2009111669A2 (en) 2008-03-05 2009-09-11 Varian Semiconductor Equipment Associates Maskless doping technique for solar cells
US20090317937A1 (en) 2008-06-20 2009-12-24 Atul Gupta Maskless Doping Technique for Solar Cells
CN101939831A (zh) * 2008-03-28 2011-01-05 芝浦机械电子株式会社 电子部件的安装装置及安装方法
US20090246706A1 (en) 2008-04-01 2009-10-01 Applied Materials, Inc. Patterning resolution enhancement combining interference lithography and self-aligned double patterning techniques
JP5024179B2 (ja) * 2008-05-19 2012-09-12 株式会社島津製作所 真空装置の動作方法
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US20100154870A1 (en) 2008-06-20 2010-06-24 Nicholas Bateman Use of Pattern Recognition to Align Patterns in a Downstream Process
US8992153B2 (en) * 2008-06-30 2015-03-31 Intevac, Inc. System and method for substrate transport
JP2010067399A (ja) 2008-09-09 2010-03-25 Canon Inc 導電性部材の製造方法、及びこれを用いた電子源の製造方法
WO2010030645A2 (en) 2008-09-10 2010-03-18 Varian Semiconductor Equipment Associates, Inc. Techniques for manufacturing solar cells
US8202789B2 (en) 2008-09-10 2012-06-19 Varian Semiconductor Equipment Associates, Inc. Implanting a solar cell substrate using a mask
WO2010042577A2 (en) * 2008-10-07 2010-04-15 Applied Materials, Inc. Advanced platform for processing crystalline silicon solar cells
US8815634B2 (en) 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
WO2010055876A1 (ja) * 2008-11-14 2010-05-20 株式会社アルバック 有機薄膜蒸着装置、有機ｅｌ素子製造装置、及び有機薄膜蒸着方法
US7816239B2 (en) 2008-11-20 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Technique for manufacturing a solar cell
JP5004932B2 (ja) 2008-12-04 2012-08-22 シャープ株式会社 太陽電池および太陽電池の製造方法
US20100159120A1 (en) 2008-12-22 2010-06-24 Varian Semiconductor Equipment Associates, Inc. Plasma ion process uniformity monitor
US7820532B2 (en) 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US8153466B2 (en) 2009-01-21 2012-04-10 Varian Semiconductor Equipment Associates, Inc. Mask applied to a workpiece
US20100187611A1 (en) 2009-01-27 2010-07-29 Roberto Schiwon Contacts in Semiconductor Devices
US8685846B2 (en) 2009-01-30 2014-04-01 Varian Semiconductor Equipment Associates, Inc. Technique for processing a substrate
TWI527930B (zh) 2009-02-04 2016-04-01 應用材料股份有限公司 用於電漿製程的接地回流路徑
JP5380464B2 (ja) 2009-02-06 2014-01-08 キヤノンアネルバ株式会社 プラズマ処理装置、プラズマ処理方法、および被処理基板を備える素子の製造方法
US20100206713A1 (en) 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition
US20100224228A1 (en) 2009-03-03 2010-09-09 Jinah Kim Solar cell and method for manufacturing the same, and solar cell module
US20100229928A1 (en) 2009-03-12 2010-09-16 Twin Creeks Technologies, Inc. Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
JP5472862B2 (ja) 2009-03-17 2014-04-16 三菱電機株式会社 電力用半導体装置の製造方法
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
WO2010108151A1 (en) 2009-03-20 2010-09-23 Solar Implant Technologies, Inc. Advanced high efficiency crystalline solar cell fabrication method
JP5352329B2 (ja) * 2009-04-13 2013-11-27 株式会社日立ハイテクノロジーズ 実装処理作業装置及び実装処理作業方法並びに表示基板モジュール組立ライン
US8286517B2 (en) 2009-06-02 2012-10-16 The United States of America as represented by the Administrator of the U.S. Environments Protection Agency Aerosol particle deposition on surfaces
JP4766156B2 (ja) * 2009-06-11 2011-09-07 日新イオン機器株式会社 イオン注入装置
US8066239B2 (en) * 2009-06-15 2011-11-29 Rockwell Automation Technologies, Inc. Integrated DIN rail attachment feature for superior attachment
US20110027463A1 (en) 2009-06-16 2011-02-03 Varian Semiconductor Equipment Associates, Inc. Workpiece handling system
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US20110116205A1 (en) 2009-09-18 2011-05-19 Ventiva, Inc. Collector electrodes for an ion wind fan
US8124427B2 (en) 2009-10-22 2012-02-28 International Business Machines Corporation Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness
US8461030B2 (en) 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces
US8062713B2 (en) 2009-12-04 2011-11-22 Hays Dan A Non-interactive electrostatic deposition of induction charged conductive powder
US20130167915A1 (en) 2009-12-09 2013-07-04 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers
CN102834905B (zh) 2010-02-09 2016-05-11 因特瓦克公司 太阳能电池制造中使用的可调阴影掩模组件
JP2010141352A (ja) * 2010-02-26 2010-06-24 Ulvac Japan Ltd 真空処理方法
US8686283B2 (en) 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
US20120021136A1 (en) 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
JP4906012B2 (ja) * 2010-07-26 2012-03-28 株式会社アルバック 静電チャック
KR20120034965A (ko) 2010-10-04 2012-04-13 삼성전자주식회사 태양 전지
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
TWI469368B (zh) 2010-11-17 2015-01-11 Intevac Inc 在太陽能電池製造中供固態磊晶成長之直流電離子注入
US20120138230A1 (en) 2010-12-06 2012-06-07 Terry Bluck Systems and methods for moving web etch, cvd, and ion implant
EP2490268A1 (en) 2011-02-03 2012-08-22 Imec Method for fabricating photovoltaic cells
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece
MY175007A (en) 2011-11-08 2020-06-02 Intevac Inc Substrate processing system and method
JP5367129B2 (ja) 2012-07-05 2013-12-11 キヤノン株式会社 撮像装置、制御装置及びそれらの制御方法
US20140166087A1 (en) 2012-12-18 2014-06-19 Intevac, Inc. Solar cells having graded doped regions and methods of making solar cells having graded doped regions
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
WO2016022728A1 (en) 2014-08-05 2016-02-11 Intevac, Inc. Implant masking and alignment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7066703B2 (en) * 1999-09-29 2006-06-27 Tokyo Electron Limited Chuck transport method and system
CN101006572A (zh) * 2004-11-15 2007-07-25 株式会社尼康 基板搬运装置、基板搬运方法以及曝光装置
CN101490824A (zh) * 2006-07-25 2009-07-22 硅源公司 连续大面积扫描注入工艺的方法与系统
TW200847217A (en) * 2007-03-22 2008-12-01 Samsung Sdi Co Ltd Apparatus for depositing protective layer and depositing method using the apparatus

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