FR2722612B1 - Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif - Google Patents

Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif

Info

Publication number
FR2722612B1
FR2722612B1 FR9408885A FR9408885A FR2722612B1 FR 2722612 B1 FR2722612 B1 FR 2722612B1 FR 9408885 A FR9408885 A FR 9408885A FR 9408885 A FR9408885 A FR 9408885A FR 2722612 B1 FR2722612 B1 FR 2722612B1
Authority
FR
France
Prior art keywords
photopile
manufacturing
photovoltaic
photovoltaic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9408885A
Other languages
English (en)
Other versions
FR2722612A1 (fr
Inventor
Zbigniew T Kuznicki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR9408885A priority Critical patent/FR2722612B1/fr
Priority to EP95925885A priority patent/EP0770268A1/fr
Priority to US08/765,948 priority patent/US5935345A/en
Priority to PCT/FR1995/000945 priority patent/WO1996002948A1/fr
Publication of FR2722612A1 publication Critical patent/FR2722612A1/fr
Application granted granted Critical
Publication of FR2722612B1 publication Critical patent/FR2722612B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR9408885A 1994-07-13 1994-07-13 Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif Expired - Fee Related FR2722612B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9408885A FR2722612B1 (fr) 1994-07-13 1994-07-13 Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
EP95925885A EP0770268A1 (fr) 1994-07-13 1995-07-13 Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obtenu et photopile comprenant un tel materiau ou dispositif
US08/765,948 US5935345A (en) 1994-07-13 1995-07-13 Process for the production of a photovoltaic material or device, material or device thus obtained, and photocell comprising such a material or device
PCT/FR1995/000945 WO1996002948A1 (fr) 1994-07-13 1995-07-13 Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obtenu et photopile comprenant un tel materiau ou dispositif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9408885A FR2722612B1 (fr) 1994-07-13 1994-07-13 Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif

Publications (2)

Publication Number Publication Date
FR2722612A1 FR2722612A1 (fr) 1996-01-19
FR2722612B1 true FR2722612B1 (fr) 1997-01-03

Family

ID=9465500

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9408885A Expired - Fee Related FR2722612B1 (fr) 1994-07-13 1994-07-13 Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif

Country Status (4)

Country Link
US (1) US5935345A (fr)
EP (1) EP0770268A1 (fr)
FR (1) FR2722612B1 (fr)
WO (1) WO1996002948A1 (fr)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150603A (en) * 1999-04-23 2000-11-21 Hughes Electronics Corporation Bilayer passivation structure for photovoltaic cells
FR2801726B3 (fr) * 1999-11-26 2002-02-08 Delta Solar Procede de fabrication d'une lamelle ou plaquette photovoltaique et cellule comportant une telle plaquette
GB2392556B (en) * 2002-09-02 2005-09-21 Dunstan Dunstan The double-irradiated near-infrared photon and photovoltaic-energy relay-system
US7247503B2 (en) * 2003-05-07 2007-07-24 Macronix International Co., Ltd. Method of laser annealing to form an epitaxial growth layer
EP1636853A4 (fr) * 2003-06-12 2007-04-04 Sirica Corp Distribution hors equilibre a etat stabilise de porteurs libres et conversion d'elevation d'energie photon utilisant une telle distribution
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
US10069026B2 (en) * 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
FR2906404B1 (fr) * 2006-09-21 2008-12-19 Commissariat Energie Atomique Procede de metallisation de cellules photovoltaiques a multiples recuits
IL189254A0 (en) * 2008-02-04 2008-08-07 Garber Valery Quantum uncooled infra-red photo-detector
US20090227061A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Establishing a high phosphorus concentration in solar cells
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
ITNA20080048A1 (it) * 2008-07-30 2010-01-31 Flavio Riccelli Pannello laminare termo-fotovoltaico
WO2010033672A1 (fr) * 2008-09-18 2010-03-25 The Regents Of The University Of California Conception de piles solaires à base de silicium, à efficacité accrue
JP2012508826A (ja) * 2008-11-12 2012-04-12 ディー．シー．シリカ リミテッド 非晶性および結晶性シリコン製品
WO2010132539A2 (fr) * 2009-05-14 2010-11-18 Photonic Glass Corporation Procédés et appareil pour conversion de longueur d'onde dans des cellules solaires et des capots de cellules solaires
WO2011005447A2 (fr) * 2009-06-22 2011-01-13 International Business Machines Corporation Structure de détecteur optique à semi-conducteur
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9337360B1 (en) 2009-11-16 2016-05-10 Solar Junction Corporation Non-alloyed contacts for III-V based solar cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214586B2 (en) 2010-04-30 2015-12-15 Solar Junction Corporation Semiconductor solar cell package
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US8686283B2 (en) * 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9214580B2 (en) * 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8647915B2 (en) 2010-12-21 2014-02-11 Ut-Battelle, Llc Hetero-junction photovoltaic device and method of fabricating the device
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US8859892B2 (en) 2011-02-03 2014-10-14 Solar Junction Corporation Integrated semiconductor solar cell package
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
US9520515B2 (en) 2011-03-25 2016-12-13 Segton Adt Sas Emitter structure based on silicon components to be used in a photovoltaic converter and a method for production of the photovoltaic device
EP2702616B1 (fr) * 2011-04-29 2022-06-29 Amberwave, Inc. Liaison intermetallique à film mince
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20120305059A1 (en) * 2011-06-06 2012-12-06 Alta Devices, Inc. Photon recycling in an optoelectronic device
MY175007A (en) 2011-11-08 2020-06-02 Intevac Inc Substrate processing system and method
WO2013074530A2 (fr) 2011-11-15 2013-05-23 Solar Junction Corporation Cellules solaires à jonctions multiples à haute efficacité
KR20130062775A (ko) * 2011-12-05 2013-06-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9178098B2 (en) * 2012-02-29 2015-11-03 The Boeing Company Solar cell with delta doping layer
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
CN103681905B (zh) * 2012-09-25 2016-08-17 国际商业机器公司 光伏器件及其形成方法
US9202959B2 (en) * 2012-09-25 2015-12-01 International Business Machines Corporation Embedded junction in hetero-structured back-surface field for photovoltaic devices
MX351564B (es) 2012-10-04 2017-10-18 Solarcity Corp Dispositivos fotovoltaicos con rejillas metálicas galvanizadas.
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
WO2014110520A1 (fr) 2013-01-11 2014-07-17 Silevo, Inc. Fabrication de modules de piles photovoltaïques à électrodes à faible résistivité
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
PL3022776T3 (pl) * 2013-07-19 2020-11-16 Segton Adt Sas Architektoniczny system i związane z nim nanomembrany wbudowane w emiter całkowicie krzemowego konwertera światła na energię elektryczną do fotokonwersji gigantycznej oraz sposób jego produkcji
EP3103142B1 (fr) 2014-02-05 2020-08-19 Array Photonics, Inc. Convertisseur de puissance monolithique à jonctions multiples
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
KR102356696B1 (ko) * 2015-07-03 2022-01-26 삼성전자주식회사 유기 광전 소자 및 이미지 센서
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10090420B2 (en) 2016-01-22 2018-10-02 Solar Junction Corporation Via etch method for back contact multijunction solar cells
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9680035B1 (en) 2016-05-27 2017-06-13 Solar Junction Corporation Surface mount solar cell with integrated coverglass
WO2018220447A2 (fr) * 2017-06-01 2018-12-06 Segton Advanced Technologie Sas Procédé amélioré de fabrication d'un métamatériau cristallin à l'intérieur d'un convertisseur lumière-électricité en silicium
FR3067169B1 (fr) * 2017-06-01 2021-09-24 Segton Advanced Tech Procede ameliore de fabrication d'un metamateriau a l'interieur d'un convertisseur lumiere-electricite en silinium
FR3067168A1 (fr) * 2017-06-01 2018-12-07 Segton Advanced Technology Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante
FR3081081B1 (fr) * 2018-05-14 2020-10-09 Segton Advanced Tech Procede d'amorphisation pour creer industriellement un metamateriau a photoconversion geante dans un convertisseur lumiere-electricite tout en silicium
WO2019010037A1 (fr) 2017-07-06 2019-01-10 Solar Junction Corporation Croissance épitaxiale par mocvd/mbe hybride de cellules solaires à jonctions multiples adaptées au réseau à haut rendement
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
WO2019067553A1 (fr) 2017-09-27 2019-04-04 Solar Junction Corporation Dispositifs optoélectroniques à infrarouge à courte longueur d'onde comportant une couche de nitrure dilué
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
WO2020185528A1 (fr) 2019-03-11 2020-09-17 Array Photonics, Inc. Dispositifs optoélectroniques à infrarouge à courte longueur d'onde comportant des régions actives de nitrure dilué à gradient ou à saut

Also Published As

Publication number Publication date
EP0770268A1 (fr) 1997-05-02
WO1996002948A1 (fr) 1996-02-01
FR2722612A1 (fr) 1996-01-19
US5935345A (en) 1999-08-10

Similar Documents

Publication Publication Date Title
FR2722612B1 (fr) Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
FR2772274B1 (fr) Dispositif comprenant une composition chromophore a appliquer sur la peau, procede de fabrication d'un tel dispositif et utilisations
FR2768836B1 (fr) Dispositif d'identification et procede de fabrication du dispositif associe
FR2738079B1 (fr) Dispositif a semiconducteurs, a tranchee, et procede de fabrication
FR2682811B1 (fr) Dispositif a semiconducteurs de type empile et procede de fabrication.
FR2741196B1 (fr) Module de conversion thermoelectrique et procede de fabrication d'un tel module
FR2753766B1 (fr) Courroie striee, son procede de fabrication et dispositif de transmission la comprenant
FR2666819B1 (fr) Procede et dispositif pour fabriquer un materiau composite a partir d'un metal de base.
FR2776833B1 (fr) Condensateur ferroelectrique et procede de fabrication d'un dispositif semi-conducteur le comprenant
FR2703221B3 (fr) Appareil et procede de fabrication d'un pate.
FR2724489B1 (fr) Dispositif a semiconducteur et son procede de fabrication
FR2655399B1 (fr) Dispositif d'equilibrage pour organe tournant et son procede de fabrication.
FR2767223B1 (fr) Procede d'interconnexion a travers un materiau semi-conducteur, et dispositif obtenu
FR2728616B1 (fr) Vitrage multiple et procede de fabrication d'un tel vitrage
FR2759495B1 (fr) Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif
FR2663149B1 (fr) Condensateur feuillete et procede de fabrication d'un tel condensateur.
FR2727606B1 (fr) Dispositif de ventilation pour article chaussant et procede de fabrication
IT1267389B1 (it) Procedimento e dispositivo per l'orditura a sezioni.
FR2701166B1 (fr) Transistor a effet de champ et procede pour la fabrication d'un tel transistor.
FR2765137B1 (fr) Procede et dispositif pour fabriquer d'etroites bandes de placage
FR2778495B1 (fr) Dispositif semiconducteur a structure mos et procede de fabrication d'un tel dispositif
FR2737372B1 (fr) Dispositif et procede d'interconnexion de reseaux, routeur ip comprenant un tel dispositif
FR2694657B1 (fr) Dispositif a semiconducteurs et procede de fabrication.
FR2686044B1 (fr) Methode et dispositif pour la fabrication d'un panneau sandwich.
FR2770030B1 (fr) Dispositif a semiconducteur comprenant un transistor mos et procede de fabrication

Legal Events

Date Code Title Description
ST Notification of lapse