TWI570745B - 用於電漿離子植入之柵極 - Google Patents

用於電漿離子植入之柵極 Download PDF

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TWI570745B
TWI570745B TW102147302A TW102147302A TWI570745B TW I570745 B TWI570745 B TW I570745B TW 102147302 A TW102147302 A TW 102147302A TW 102147302 A TW102147302 A TW 102147302A TW I570745 B TWI570745 B TW I570745B
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維內 普拉巴卡爾
巴巴克 艾迪比
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因特瓦克公司
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Description

用於電漿離子植入之柵極
本發明涉及電漿離子植入技術，例如用於製造半導體裝置，特別是太陽能電池的技術。
擴散接面太陽能電池在其技術領域已屬熟知技術。這種電池是藉由摻雜一摻雜物，如硼和磷於矽基板中所製成。然後製作金屬接點，以收集由電池產生之電流。也有稱為正面接點電池的已知技術，電池上可以形成選擇性n++射極，其中在射極表面提供高摻雜濃度的區域，沉積該金屬接點。一般來說，覆蓋摻雜是使用三氯氧磷(POCl3)進行擴散。另一種已知的太陽能電池為背面接點電池，通常稱為點接觸(point contact)電池或指叉式背面接點(interdigitated back-contact，IBC)電池，其中所有的電氣接點僅設置在太陽能電池的背面。在製作該選擇性射極與IBC電池時，需要在晶圓向陽面整個區域進行覆蓋摻雜，但在電池背面僅在選定區域做選擇性摻雜。例如，在形成選擇性射極時，太陽能電池上之向陽表面要形成與金屬導線接觸之接點區域，需以高於背景覆蓋摻雜的劑量，作選擇性的摻雜。反之，製作IBC電池時則需要形成交替的p型及n型摻雜區域，通常個別在不同的步驟，使用例如，遮罩進行。
為要能夠提供形成不同摻雜圖案的植入區域，對於使用在IBC的遮罩有極為嚴格的要求。在這樣的遮罩中，開口寬度可能是介於200到1000微米的範圍，長度並可能達到基板的全長。各種摻雜物質摻雜區的線距或間距，則可小到小於1000微米之範圍，才能使極性相反的摻雜區各線能夠交替排列，並能高度精確的位在預定位置。這種遮罩在製造完成後，剛性可能不足，以至於提高製程難度，並難以在離子植入系統中處理及使用。在遮罩上也不容許由十字交叉。因交叉的開口會導致摻雜線產生陰影， 因此產生導電性差的摻雜線。
此外，選擇性植入還有形成二維圖案的需求。這時，摻雜圖型以x和y方向分布在基板表面。二維圖案可能包括轉角，適應電流流動而設的位移，圓形，暈圈，點及其他2D形狀。
雖然業界已經提出了以離子植入技術改進摻雜效果，並提升電池效率的方法，但由於離子植入的高成本及標準的離子植入設備的低產率，並沒有業者使用離子植入技術來代替。然而，提高電池效率與形成選擇性射極或IBC電池的需求日漸提高，市場上已經有改進離子植入技術，以提供所需的低成本和高產率的需求。因此，業者乃提出以電漿為基礎的離子植入技術，以解決上述技術難題。其中，一種通常稱為電漿浸沒離子植入技術(Plasma immersion ion implantation-PIII)之解決方法，是以電漿浸沒要植入的基板。另一種相關的解決方案是在電漿及該基板之間嵌入一柵極組件，以從電漿中抽取離子，再植入到該基板上，同時保持電漿不接觸該基板。雖然這種解決方案看似大有可為，但要應用在選擇性植入，仍需要修正及改良。
以下對本發明的簡述，目的在於對本發明之數種面向和技術特徵作一基本說明。發明簡述並非對本發明的廣泛表述，因此其目的不在特別列舉本發明的關鍵性或重要元件，也不是用來界定本發明的範圍。其唯一目的是以簡明的方式呈現本發明的數種概念，作為以下詳細說明的前言。
本發明揭示之實施例提供一種運用柵極及遮罩設計，以應用於選擇性植入的電漿離子植入技術。
本發明某些實施例揭示的柵極及遮罩設計，是視特定應用目的不同，選擇避免光束的發散或應用光束的發散。
本發明揭示之實施例提供的柵極設計，可以將植入遮罩疊置在晶圓表面上，或置放在晶圓表面上方，並與該晶圓表面分離。
本發明之多種實施例揭示一種電漿離子植入用柵極及遮罩，該柵極及遮罩易於製造並能耐受電漿腔內存在的作業條件。
本發明在其它實施例中，還提供一種選擇性植入之方法，通過一柵極及遮罩，以控制並利用光束發散的自然現象。
根據本發明之數面向，本發明提供一種用於電漿離子植入之柵極，該柵極包括一平板，該平板具有分布在其表面上之複數長形孔或槽，各長形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各長形孔並具有一預定深度，延伸穿過該平板，其中，各長形孔之長軸建置成：當該柵極安裝在一電漿離子植入系統內時，該長軸朝向與在該基板上所要植入之形狀之長軸垂直之方向。該複數長形孔可能排列成複數列及複數行，使各行之各孔與前後行的孔平行，並使穿過同一列各孔的長軸的直線，與穿過同一行各孔的短軸的直線，相交成直角。該複數長形孔排列成複數列及複數行，使得各行內各孔與前後行之孔偏移排列，並使得穿過一選定行所有孔的中心的直線，與穿過同一列各孔的長軸的直線，相交成銳角。
根據本發明另一面向，本發明提供一種用於電漿式離子植入系統之出口柵極及植入遮罩之組合，其中：該出口柵極包括一平板，該平板具有分布在其表面上之複數長形孔，各長形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各長形孔並具有一預定深度，延伸穿過該平板，以供離子通過該長形孔；該植入遮罩包括一平板，該平板具有分布在其表面上之複數直形孔，各直形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各直形孔並具有一預定深度，延伸穿過該平板，以供離子通過該長形孔；其中，該直形孔排列成複數列，使各列內之各直形孔以離子遮斷連結部互相分離；且其中各長形孔的長軸朝向與該直形孔的長軸垂直的方向。該出口柵極的複數長形孔可能排列成複數列及複數行，使各行之各孔與前後行的孔平行，並使穿過同一行各孔的長軸的直線，與穿過同一列各孔的短軸的直線，相交成直角。
依據本發明其他面向，本發明提供一電漿離子植入系統，該系統包括：一處理腔，一柵極組件，位在該電漿腔內，並區分該處理腔成為一電漿區域及一離子植入區域；一輸送機構，用於沿一行進方向輸送基板且將該基板置於該柵極組件下；其中，該柵極組件包括一平板，具有複 數孔，該複數孔排列成複數列及複數行，且其中各行之各孔與前後行的孔偏移排列，使穿過一選定列所有孔的中心的直線，與該行進方向形成銳角。各孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各孔並具有一預定深度，延伸穿過該平板，以供離子通過該長形孔。
該系統還可包括一遮罩，該遮罩包括一平板，該平板具有分布在其表面上之複數直形孔，各直形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各直形孔並具有一預定深度，延伸穿過該平板，以供離子通過該長形孔；其中，該直形孔排列成複數列，使各列內之各直形孔以離子遮斷連結部互相分離。該平板之孔的長軸朝向與該遮罩的直形孔的長軸垂直的方向排列。該平板及/或該基板可以耦接至接地電位。該輸送機構可為一輸送帶。
依據本發明另外面向，本發明提供一種離子植入系統，該系統包括：一處理腔；一電漿柵極，位在該電漿腔內，並區分該處理腔成為一電漿區域及一離子植入區域；該電漿柵極包括複數孔，建置成使離子能形成小離子束，從該電漿腔經由電漿柵極進入該處理腔，其中該小離子束的離子向一第一方向發散；該系統並包括一遮罩，位於該電漿柵極下方且包括一平板，該平板具有複數孔，排列成平行線，其中各孔形成一線段，且其中各列內的各兩線段之間設置一離子遮斷連結部，且其中該線段朝向與該第一方向垂直的第二方向排列。
根據本發明其它面向，本發明提供一種將離子植入一基板，以在基板內形成平行植入線形之方法，該方法包括：引入一待植入之基板至一電漿處理腔；定位一遮罩在該基板上方具有一預定間隙之處，該遮罩包括排列成平行列之複數線段，其中各列之線段由可將到達的離子遮斷的連結部加以分離，且該各列之線段各對應至一植入線形；在該電漿處理腔內點燃電漿，並從該電漿中提取離子，以形成具有向平行於該列方向之方向發散的小離子束；及引導該小離子束穿過該遮罩並植入該基板，以形成該平行植入線形。該預定間隙設定成能使發散的小離子束能將離子植入到該基板上，正位於該連結部下方之位置，以植入該複數植入線形之寬度，其中，各植入線形長度對應於該遮罩內一列之所有線段與連結部之總長 度。該抽取離子之步驟可進而包括形成在垂直於該列方向之方向上不發生發散的小離子束的步驟。
100‧‧‧電漿離子植入腔
105‧‧‧電漿
110‧‧‧柵極組件
115‧‧‧小離子束
120‧‧‧晶圓
125‧‧‧遮罩
135‧‧‧出口柵極
137‧‧‧圓形孔
600‧‧‧電漿腔
605‧‧‧電漿
610‧‧‧柵極組件
612‧‧‧輸送帶器
615‧‧‧小光子束
620‧‧‧晶圓
625‧‧‧遮罩
627‧‧‧連結部
635‧‧‧出口柵極
725‧‧‧遮罩
727‧‧‧連接部
728‧‧‧線段
735‧‧‧出口柵極
738‧‧‧長形孔
745‧‧‧線形
本發明其他面向與特徵可由以下詳細說明並參照下列圖式而更形清楚。但須理解，詳細說明與圖式的目的乃在提供本發明實施例的非限定性範例，本發明的範圍應由所附的申請專利範圍限定。
本專利說明書所附的圖式納入本件專利說明書中，並成為其一部份，是用來例示本發明的實施例，並與本案的說明內容共同用來說明及展示本發明的原理。圖式的目的只在以圖型方式例示本發明實施例的主要特徵。圖式並不是用來顯示實際上的範例的全部特徵，也不是用來表示其中各元件之相對尺寸，或其比例。
第1圖為使用任何依據本發明實施例柵極和遮罩設置之電漿離子植入系統之示意圖。
第2圖為依據本發明一實施例之電漿離子植入柵極之立體示意圖。
第3圖為依據本發明另一實施例之電漿離子植入柵極之俯視圖。
第4圖為依據本發明又一實施例之電漿離子植入柵極之俯視圖。
第5圖為依據本發明又一實施例之電漿離子植入柵極之俯視圖。
第6圖為依據本發明一實施例之電漿離子植入系統示意圖。
第7圖為依據本發明另一實施例之電漿離子植入系統示意圖。
本發明所揭示各種實施例，應用在電漿離子植入系統，可提高基板之處理能力，同時也在進行選擇性植入時，提供精確的植入特性。經由本發明實施例產生的高產率，雖然也可以用於其他物品的製造，但特別適合應用於太陽能電池的製造，尤其是需要應用遮罩進行選擇性離子植入的場合。本發明某些實施例利用將植入遮罩從該晶圓後退產生的效果，雖然遮罩可與晶圓一起行進。本發明的實施例特別適用於電漿離子系統，在該系統中電漿腔中使用柵極，以從電漿中抽取離子，並將該離子朝向該晶圓加速。
第1圖顯示一電漿離子植入腔100之橫截面示意圖。圖中顯示使用柵極組件110以從電漿105中抽取小離子束115的狀態。該柵極可具有相對於該電漿的偏壓，以便提取其中的離子，並將小離子束中的離子朝向該晶圓120加速，以將離子植入晶圓120中。在本發明一實例中，是使用3個柵板以形成該柵極組件110，包括：一上柵板，以正偏壓提取離子；一中柵板，以負偏壓排斥電子；及一下柵板接地。該基板也可以接地，也可以提供偏壓。當下柵板及晶圓均有偏壓時，在該下柵板與晶圓之間會產生一漂移區，故植入能量是由抽取電位決定。也可使用其他的柵極配置，但無論如何配置，最下方的柵板在本說明書中都稱為出口柵極，即離子離開該柵極組件110時最後經過的柵板。以下將描述出口柵極各種實施例之結構，同時也說明與柵極組件一起使用的植入遮罩的設計。
第1圖上方的放大圖顯示柵極組件110之出口柵極之俯視圖。在本實施例中，該出口柵極形狀為有一複數圓形孔137的平板135。在進行選擇性植入時，換言之，只對晶圓的選定區域植入時，例如在製作選擇性射極或IBC時，將一遮罩125置於晶圓上方，使得只有能夠穿過遮罩上的圓孔的離子才會植入晶圓中。
如第1圖所示，當離子從該出口柵極135的孔137離開時，互斥力會使離子以發散的軌跡行進。因此，雖然有些離子會以900角進入該晶圓的表面，發散的離子進入晶圓的角度會異於垂直於晶圓表面的角度。當在植入過程中需使用一遮罩時，例如製作選擇性射極或IBC時，該光束的發散問題會特別嚴重。
第1圖的虛線標註顯示該遮罩125及晶圓120之橫截面部份放大圖，並顯示離子115穿過遮罩125內的孔而碰撞到晶圓120的狀態。如圖所示，雖然孔的深寬比(即，孔的高度對孔徑的比例)設成足以使大部份的離子束以垂直於晶圓表面的方向行進，但當該離子從該遮罩的孔射出時，仍會再次發散。要解決這項問題必須將遮罩置放在極靠近晶圓的位置，以控制其植入區域的尺寸。此外，即使該遮罩是置於非常靠近晶圓的位置，仍會有發散發生。這個現象對植入圖案的準確性產生不利的影響，特別是當植入的圖案具有極小的尺寸時，例如，選擇性射極或IBC的線寬 與線距。
如第1圖所示，從靠近柵板各孔的中心附近離開的離子，一般而言不會偏向。另一方面，從柵板各孔的邊緣附近離開的離子，則會偏向。為善用這種現象，第2圖的實施例是使用具有長橢圓孔或長形槽，而不是圓形孔的出口柵極。結果，如圖中實線標註，即沿A-A線之截面放大圖所示，在長軸上，除了在長形孔的靠近邊緣部分外，沒有任何光束發散。當然，如圖中虛線標註所示，在短軸會有較多的光束發散。因此，在本實施例中，是將該遮罩的朝向設成使長形孔的長軸垂直於所要植入的圖案的方向，如第2圖所示。如果使用一遮罩125，則該柵極的孔的長軸應垂直於硬式遮罩上圖案的長軸。同樣地，如果該植入系統是用來處理移動的基板，即移動式離子植入，該基板的行進方向應該垂直於柵極長形孔的長軸方向。
在第2圖的實施例中，雖然是使用該柵極來改善植入的效果，但在植入的操作過程中仍有劣化的疑慮。特別是電漿與離子的抽取過程，都會導致柵極加熱。由於過度的加熱，孔的長度過長會導致孔的側壁發生變形。這項技術難題可以透過將長形孔以一系列排列成列和行的較短的長形孔代替，而獲得解決，即如第3圖所示。第3圖所示之實施例較不易因受熱而劣化。如果使用第3圖的柵極，其孔的長形軸所在的方向應垂直於所要植入的圖案的長軸方向，垂直於遮罩上的長形孔，或垂直於基板的行進方向，如果使用移動式植入。
第3圖所示之實施例是藉由將該長形孔「切割」成為一系列較短的長形孔，以加強穩定性。該較短的長形孔排列成列與行，使相同一列的孔的長軸可以連成一直線，相同一行的孔的短軸也可以連成一直線，兩直線並相交成一直角。然而，在長形孔之間則有一沒有離子從該柵極射出之「死區」。第4圖之實施例即用來解決此技術難題。其作法是將孔沿一有角度的線排列，使得該死區沿一不與基板行進方向垂直的線排列。也就是說，在第4圖的實施例中，各個連續的孔是對其相鄰的孔位移一給定的量。以另一種說法則是，排列在相同一列的孔的長軸雖然可以連成一線，但排列在相同一行的孔的短軸則不會連成一線。同時，排列在相同一列的孔的長軸所連成的線，會與排列在相同一行的所有孔的中心所連成的線， 會以非直角相交。因此，對於一行進的晶圓而言，位在死區內的各點僅會遭離子投射一次，且所有的死區會平均到基板，且各死區都會被從其他的孔發射的離子覆蓋。因此，在該晶圓退出系統時，晶圓上的各個部分都已經接受植入，而不受死區影響。
與上述類似的效果也可以使用排列在垂直或傾斜於晶圓行進方向的圓孔來達成。第5圖即顯示一種這種實施例。如第5圖所示，一直線可穿過所切過的各孔的中心。該直線與晶圓行進方向形成一銳角。但平行於該晶圓行進方向畫出的直線，則不會通過該線所切過的各孔的中心。因此，在晶圓上的每一個點都會暴露在一些孔的中心部分所發出的離子下，以及其他孔的邊緣部分所發出的離子下，使得總植入量平均化。
雖然不是在所有狀況下皆然，但目前在大部分的離子植入應用上，例如選擇性射極及IBC的製作上，該選擇性植入的圖案都呈細長的線的形式。達成這種圖案的一種方法，是使用標準的光阻劑，在晶圓的表面上形成一遮罩。然而，光阻劑遮罩的形成過程極為漫長且昂貴，且在完成植入之後，需要移除遮罩。如果需要植入一第二組極性相反的線形，則需要重複該光阻劑遮罩的形成與移除過程。因此，如能使用硬式遮罩來代替，將有益於選擇性植入的應用。然而，要應用於選擇性植入的硬式遮罩會含有許多細長的線形，如第2圖所例示。由於該遮罩相對較薄並需耐受撞擊離子的加熱，該遮罩難以保持原來平坦形狀，且所產生的植入線形也無法符合規格的需求。
第6圖顯示一種使用硬式遮罩植入細長線形，以實施植入之植入系統之實例。該電漿植入腔可以是任何利用該柵極板排列配置的設計，但在該特定實例中，該電漿腔600具有一輸送帶612，以傳送晶圓通過植入腔600。腔室600內配備柵極組件610，柵極組件610具有一出口柵極635，顯示於上方標註的放大圖中。該柵極組件610是用來從電漿605中抽取離子，並產生朝向該晶圓620方向的小光束615。如第6圖所示，由於出口柵極635的長形孔的長軸方向垂直於晶圓的行進方向，該小光束向平行於晶圓行進之方向擴展，該小光束垂直於晶圓行進方向的擴展即可予忽略。
顯示於下方標註處遮罩625形成平板狀，可例如為一不銹鋼 板，其中所含的長形孔是使用連結部627截段，而不形成具有植入線形所需長度的長孔或長形槽。當然，實際的植入線形不能具有這種連結部，因為連結部會導致電路的開路-所植入的線路必須連續性，才能導電。然而，只要使出口柵極635的長形孔長軸垂直於遮罩625上長形孔之長軸，所產生的光束發散就能對連結部627下方的基板植入離子。這種現象參照第6A圖的圖示將更形清楚。特別是由於小光束615向平行於遮罩625長形孔的長軸方向發散，該發散部份在連結部627下方的行進方式，將足以產生實線的植入線形，而不是如遮罩圖形般的線段線形。只要適當調整遮罩625與晶圓620之間的距離G，即可控制傳遞到連接部627下方的離子植入量。
此外，第6圖實施例中，各個晶圓與其所屬之遮罩一起行進。當該晶圓到達植入區時，亦即位在該出口柵極下方對準時，該輸送帶即停止運作，而開始植入製程。當植入達到所需的劑量時，即停止或阻斷該離子束，並將該輸送帶重新通電以移除已完成植入的晶圓，同時引入未經植入的晶圓進入系統。該已完成植入的晶圓所使用遮罩其後從晶圓移除，清洗，以便再次使用。
第7圖顯示本發明另一實施例。在第7圖的實施例中的需求是要在晶圓705中植入具有複數條長線745之圖案。這些線形可能是用來形成例如選擇性放射電池之導線或IBC電池的摻雜線。如果要使用硬式遮罩來植入這種細長的線形745，此行業人士所使用的遮罩會具有與該植入線745形狀相符的細長切口。但如此一來，將使該遮罩在經過加熱和冷卻的循環後，變得脆弱且不穩定。本發明做法與此不同，本發明並不使用具有細長孔的遮罩，而是將遮罩725上的各條線以連接部727截段，形成多數條中斷的線段728。然而，如果在標準的植入系統中使用這種遮罩，將導致在晶圓上植入線段，而線段並不能產生電性連接。反之，使用向所有方向發散的離子束將很難或不可能適當控制植入線745的寬度。因此，本發明在該出口柵極735形成長形孔或線段738，使其長軸垂直於遮罩上的線段728的長軸方向。這種設置將可使光束向長形孔738的短軸方向，即平行於遮罩上線段的方向發散。該光束在該方向的發散將在連接部727下方提供一 離子軌跡，用以植入離子，使該植入線形745成為連續的線。相反地，因為該孔738為細長形，光束向孔738的長軸方向發散的量較小。因為出口柵極735的孔738的長軸垂直於遮罩725上的孔728的長軸方向，在線形728的寬度方向的發散量較小，如此即可嚴格控制線745的寬度。
在第7圖實施例中，該小離子束火焰或離子的發散在離開該出口柵極的長形孔後，在短軸方向的角度可能在60以上，但在長軸方向上的發散角度幾乎為0，但在長形孔兩側最外邊緣處的發散角度，也可達60。可將介於遮罩與晶圓之間的距離設定在0到約5mm，或更可能為約2mm。在這種間距下，離子束在晶圓上的發散寬度可達約420微米。因此，如果沒有以第7圖的實施例所示的方式控制該離子束的發散，離子穿過約150微米寬度的遮罩開口後，可形成寬度高達約570微米的植入線形。因此，如果未採用第7圖的發散控制，要植入一150微米的線寬，遮罩上的孔寬度必須設成更窄，但要使用這種設計，製造上將非常困難且昂貴。與此相反，由於在第7圖的實例中，已可將該光束的發散控制在線寬方向，因此在遮罩上的孔寬度可以設成與要植入形成的線寬相同，故使製造更為簡單及便宜。
雖然在以上說明的實施例中，該遮罩上的長形孔或槽全都具有相同的形狀和長度，但這種設置並非必要。相反的，該遮罩上的長形槽也可以具有不同的形狀和長度。例如，第7圖的遮罩725即有不同長度的長形槽728。
上述的實施例可以應用於以植入離子技術製造太陽能電池的方法上。該方法的步驟包括：引入一待植入之基板至一電漿處理腔，及定位一遮罩在該基板上方具有一預定間隙之處。該遮罩設置成包括排列成平行列之複數線段，其中各列之線段由可將到達的離子遮斷的連結部加以分離。該方法接著在電漿處理腔內點燃電漿，並從該電漿中提取離子，以形成具有沿平行於該列方向上發散的小離子束。該預定間隙設定成能使發散的小離子束能將離子植入到該基板上，正位於該連結部下方之位置，以植入複數植入線形之寬度，且各植入線形的長度對應於該遮罩內一列之所有線段與連結部之總長度。
以上是對本發明例示性實施例之說明，其中顯示特定之材料與步驟。但對習於斯藝之入士而言，由上述特定實例可產生或使用不同變化，而此種結構及方法均可在理解本說明書所描述及說明之操作後，以及對操作之討論後，產生修改，但仍不會脫離本發明申請專利範圍所界定之範圍。
125‧‧‧遮罩
135‧‧‧出口柵極

Claims (20)

  1. 一種用於電漿離子植入之柵極，包括：一平板，該平板具有分布在其表面上之複數長形孔，各長形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各長形孔並具有一預定深度，延伸穿過該平板，其中，各長形孔之長軸建置成：當該柵極安裝在一電漿離子植入系統內時，該長軸朝向與在該基板上所要植入之形狀之長軸垂直之方向；其中該複數長形孔排列成複數列及複數行，使各行內各孔與前後行之孔偏移排列，並使得穿過一選定行所有孔的中心的直線，與穿過同一列各孔的長軸的直線，相交成銳角。
  2. 一種用於電漿離子植入之柵極，包括：一平板，該平板具有分布在其表面上之複數長形孔，各長形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各長形孔並具有一預定深度，延伸穿過該平板，其中，各長形孔之長軸建置成：當該柵極安裝在一電漿離子植入系統內時，該長軸朝向與在該基板上所要植入之形狀之長軸垂直之方向；其中該複數長形孔排列成複數列及複數行，而包含在一方形區域內，使各行內各孔與前後行之孔偏移排列，並使得穿過一選定列中所有孔的中心的直線，與該方形區域的邊形成銳角。
  3. 一種用於電漿離子植入之柵極，包括：一平板，該平板具有分布在其表面上之複數長形孔，各長形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各長形孔並具有一預定深度，延伸穿過該平板，其中，各長形孔之長軸建置成：當該柵極安裝在一電漿離子植入系統內時，該長軸朝向與在該基板上所要植入之形狀之長軸垂直之方向；其中該複數長形孔排列成複數列及複數行，以在孔之間形成死區(dead zones)，使各行內各孔與前後行之孔偏移排列，且使穿過一選定列所有死區的中心的直線，與一待植入基板的行進方向，形成銳角。
  4. 一種用於電漿離子植入之柵極，包括：一平板，該平板具有複數圓孔，其中該孔排列成複數列及複數行，而包含在一方形區域內，使各行內各孔與前後行之孔偏移排列，並使得穿過一選定列所有孔的中心的直線，與該方形區域的邊形成銳角。
  5. 一種用於電漿離子植入之柵極，包括：一平板，該平板具有複數圓孔，其中該孔排列成複數列及複數行，使各行內各孔與前後行之孔偏移排列，並使得穿過一選定列所有孔的中心的直線，與一待植入基板的行進方向，形成銳角。
  6. 一種用於電漿離子植入之柵極，包括：一平板，該平板具有複數圓孔，其中該孔排列成複數列及複數行，以在孔之間形成死區，並使各行內各孔與前後行之孔偏移排列，且使穿過一選定列所有死區的中心的直線，與一待植入基板的行進方向，形成銳角。
  7. 一種用於電漿式離子植入系統之出口柵極及植入遮罩之組合，其中：該出口柵極包括一平板，該平板具有分布在其表面上之複數長形孔，各長形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各長形孔並具有一預定深度，延伸穿過該平板，以供離子通過該長形孔；該植入遮罩包括一平板，該平板具有分布在其表面上之複數直形孔，各直形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各直形孔並具有一預定深度，延伸穿過該平板，以供離子通過該長形孔；其中，該直形孔排列成複數列，並使各列內之各直形孔以離子遮斷連結部互相分離；且其中各長形孔的長軸朝向與該直形孔的長軸垂直的方向。
  8. 如申請專利範圍第7項的組合，其中該出口柵極的複數長形孔排列成複數列及複數行，使各行之各孔與前後行的孔平行，並使穿過同一列各孔的長軸的直線，與穿過同一行各孔的短軸的直線，相交成直角。
  9. 如申請專利範圍第7項的組合，其中該出口柵極的複數長形孔排列成複數列及複數行，使各行之各孔與前後行的孔平行，並使穿過同一行各孔的長軸的直線，與穿過同一列各孔的短軸的直線，相交成直角。
  10. 一種電漿離子植入系統，該系統包括：一處理腔，一柵極組件，位在該電漿腔內，並區分該處理腔成為一電漿區域及一離子植入區域；一輸送機構，用於沿一行進方向輸送基板且將該基板置於該柵極組件下；其中，該柵極組件包括一平板，具有複數孔，該複數孔排列成複數列及複數行，且其中各行之各孔與前後行的孔偏移排列，使穿過一選定列所有孔的中心的直線，與該行進方向形成銳角。
  11. 如申請專利範圍第10項之系統，其中各孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各孔並具有一預定深度，延伸穿過該平板，以供離子通過該長形孔。
  12. 如申請專利範圍第11項之系統，另包括一遮罩，該遮罩包括一平板，該平板具有分布在其表面上之複數直形孔，各直形孔具有長橢圓形之橫截面形狀，該長橢圓形具有一長軸與一短軸，各直形孔並具有一預定深度，延伸穿過該平板，以供離子通過 該長形孔；其中，該直形孔排列成複數列，使各列內之各直形孔以離子遮斷連結部互相分離。
  13. 如申請專利範圍第12項之系統，其中該平板之各孔的長軸朝向與該遮罩的直形孔的長軸垂直的方向排列。
  14. 如申請專利範圍第13項之系統，其中該平板耦接至接地電位。
  15. 如申請專利範圍第14項之系統，其中該基板耦接至接地電位。
  16. 如申請專利範圍第13項之系統，其中該輸送機構包括一輸送帶。
  17. 一種離子植入系統，包括：一處理腔，一電漿柵極，位在該電漿腔內，並區分該處理腔成為一電漿區域及一離子植入區域；該電漿柵極包括複數孔，建置成使離子能形成小離子束，從該電漿腔經由電漿柵極進入該處理腔，其中該小離子束的離子向一第一方向發散；一遮罩，位於該電漿柵極下方且包括一平板，該平板具有複數孔，排列成平行線，其中各孔形成一線段，且其中各列內的各兩線段之間設置一離子遮斷連結部，且其中該線段朝向與該第一方向垂直的第二方向排列。
  18. 一種將離子植入一基板，以在基板內形成平行植入線形之方法，該方法包括：引入一待植入之基板至一電漿處理腔； 定位一遮罩在該基板上方具有一預定間隙之處，該遮罩包括排列成平行列之複數線段，其中各列之線段由可將到達的離子遮斷的連結部加以分離，且該各列之線段各對應至一植入線形；且其中該複數線段排列成複數列及複數行，使各行內各線段與前後行之線段偏移排列，並使得穿過一選定行所有線段的中心的直線，與穿過同一列各線段的長軸的直線，相交成銳角；在該電漿處理腔內點燃電漿，並從該電漿中提取離子，以形成具有向平行於該列方向之方向發散的小離子束；及引導該小離子束穿過該遮罩並植入該基板，以形成該平行植入線形。
  19. 如申請專利範圍第18項之方法，其中，該預定間隙設定成使該發散的小離子束能將離子植入到該基板上，正位於該連結部下方之位置，以植入該複數植入線形之寬度，其中，各植入線形長度對應於該遮罩內一列之所有線段與連結部之總長度。
  20. 如申請專利範圍第19項之方法，其中，該抽取離子之步驟另包括形成在垂直於該列方向之方向上不發生發散的小離子束的步驟。
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US20160204295A1 (en) 2016-07-14
US9583661B2 (en) 2017-02-28
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